Potter, Richard - University of Liverpool

个人简介

Dr Richard J. Potter (RJP) is a senior lecturer in the Centre for Materials and Structures (CMS) within the School of Engineering at the University of Liverpool. He has published ~60 papers in the field of thin film materials and semiconductor optoelectronics. RJP obtained his PhD in 2003 from The University of Essex for the study of optical processes in dilute nitride semiconductors with Prof. Naci Balkan. In early 2003 following his PhD, RJP took up a PDRA post at the University of Liverpool, working with Prof. Paul Chalker on liquid injection MOCVD. In addition to MOCVD, RJP adapted a commercial liquid injection MOCVD reactor to enable Atomic Layer Deposition (ALD) paving the way for the group to become a UK leader in this exciting research field. In 2005, RJP was appointed as a lecturer within the School of Engineering at Liverpool, becoming a senior lecturer in 2012. RJP's main research is in the area of ultra thin film materials, with research spanning from fundamental studies of ALD surface science, through to more application focused research (including: microelectronics, photo catalysis, photovoltaic’s, detector technology and anti-microbial coatings for bio-medical implants). Invited to speak at the Soprano network meeting (Invitation to Speak, Soprano meeting organisers 2011) Invited talk at ALD2010 (Invitation to Speak, Conference Chairs & technical program comittee 2010) Undergraduate recruitment coordinator for the School of Engineering and member of the Recruitment and Admissions Group.

近期论文

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Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)(x)(Al2O3)(1-x) as potential gate dielectrics for GaN/AlxGa1-xN/GaN high electron mobility transistors Self-limiting atomic layer deposition of conformal nanostructured silver films Wider Memory Window in Ta2O5 RRAM by Doping. In 47th IEEE Semiconductor Interface Specialists Conference (Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films Article The Effects of Zr Doping on the Optical, Electrical and Microstructural Properties of Thin ZnO Films Deposited by Atomic Layer Deposition. Band Alignment of Ta2O5 on Sulphur Passivated Germanium by X-ray Photoelectron Spectroscopy Oxygen deficient alpha-Fe2O3 photoelectrodes: a balance between enhanced electrical properties and trap-mediated losses Vacuum ultraviolet photochemical selective area atomic layer deposition of Al2O3 dielectrics Gadolinium nitride films deposited using a PEALD based process Polymer-nanoparticle composites composed of PEDOT:PSS and nanoparticles of Ag synthesised by laser ablation. Atomic layer deposition of TaN and Ta3N5 using pentakis(dimethylamino)tantalum and either ammonia or monomethylhydrazine Picosecond laser patterning of PEDOT:PSS thin films Modification of the electrical properties of PEDOT:PSS by the incorporation of ZnO nanoparticles synthesized by laser ablation Silicon nanoparticles generated by femtosecond laser ablation in a liquid environment CdTe nanoparticles synthesized by laser ablation II–VI semiconductor nanoparticles synthesized by laser ablation 'High-k Materials and Their Response to Gamma Ray Radiation' CdSe nanoparticles synthesized by laser ablation Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology Permittivity enhancement of hafnium dioxide high-kappa films by cerium doping Charge trapping and interface states in hydrogen annealed HfO2–Si structures Charge trapping characterization of MOCVD HfO2/p-Si interfaces at cryogenic temperatures Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition Optimising Precursor Delivery