Chalker, Paul - University of Liverpool

个人简介

Professor Chalker obtained his BSc (1982) and PhD (1986) from University College Cardiff in the University of Wales. After completing his thesis, sponsored by UKAEA, he joined the Materials Development Division at the Harwell Laboratory in Oxfordshire. He worked in the field of materials characterisation, firstly in secondary ion mass spectrometry and later in electron spectroscopies applied to a wide range of materials. With the formation of AEA Technology plc, he became the head of Electronic Materials Team within the Product Development Group. In this role, he was responsible for a range of manufacturing coating technologies and ceramic composite materials. In 1997, he moved to Materials Science and Engineering at the University where he now a professor working in the field of functional materials and process technologies. He has worked extensively with industry to translate fundamental materials chemistry into commercial processes and products. Professor Chalker is a Fellow of the Royal Society of Chemistry and a Fellow of the Institute of Materials, Minerals and Mining. National Microelectronics Institute, Invitation to Speak (Invitation to Speak, NMI 2013) Invited talk, Kyoto, 5th International Workshop on High-Resolution Depth Profiling (Invitation to Speak, 5th International Workshop on High-Resolution Depth Profiling 2009) Invited talk, European Materials Research Society, Poland (Invitation to Speak, European Materials Research Society 2008) BALD, Int. Conf. Atomic Layer Deposition (Invitation to Speak, EMRS 2007) EuroAsia IC Global Award (EuroAsia Semiconductor 2007) Teamwork in Innovation Award 2005 (Royal Society of Chemistry 2005)

研究领域

My research is focused on the characterisation and synthesis of thin film materials and surfaces. This includes the development of manufacturing processes based on chemical vapor deposition (CVD) and atomic layer deposition (ALD). I have developed a range of functional thin film materials for applications in electronic devices, renewable energy and others.

近期论文

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Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition (Invited) Tunnel-Barrier Rectifiers for Optical Nantennas. Anomalous Capacitance-Voltage Hysteresis in MOS Devices with ZrO2 and HfO2 Dielectrics Atomic layer deposition of Nb-doped ZnO for thin film transistors Capacitance-voltage characteristics measured through pulse technique on high-k dielectric MOS devices Composition used in making coated quantum dot beads for use in fabrication of quantum dot-based light-emitting devices, comprises powder comprising beads having primary matrix material, quantum dot nanoparticles, and surface coating. Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. Controlling the physical and electrical properties of ALD grown ZnO using Nb as a dopant Fabrication of composite functional body/substrate for aerospace or automotive industry or for electronics industry, comprises selectively melting build of functional material with directed energy beam Formation of cerium doped high dielectric film for use in semiconductor device, involves providing metal source precursor and specific cerium precursor to substrate. Formation of cerium-doped high-k dielectric film for improving high-k gate property of, e.g. memory application, comprises delivering metal-source precursor and cerium precursor to substrate by chemical phase deposition process. Formation of high-dielectric constant dielectric film used for memory and/or logic application, comprises vapor deposition process involving delivering metal source precursor and titanium precursor(s) to substrate. High-k dielectric fun-forming lattice for film for use in improving gate property of semiconductor device, e.g. memory application, comprises zirconium oxide and/or hafnium oxide, and titanium atoms. Method for fabricating quadrupole mass spectrometer (QMS) component e.g. ion source, involves exposing several layers of bed of curable material to the incident radiation, to produce several layers of cured material of QMS component. New mixed metal oxide, particularly strontium-hafnium-titanium oxide used as dielectric in electrical, electronic, magnetic, mechanical, optical or thermal device. Photochemical atomic layer deposition and etching Polyoxypropylene-polyoxyethylene alkyl-ether prodn.|comprises polycrystalline diamond diaphragm on a support, a detection device for measuring deflection, etc. Preparing a functional device comprising a substrate and an element comprising a mixed metal oxide by exposing discrete volatilized amounts of a strontium precursor, a hafnium or zirconium precursor and a titanium precursor to the substrate. Real-time and on-site gamma-ray radiation response testing system for semiconductor devices and its applications Silver Ink Formulations for Sinter-free Printing of Conductive Films Wider Memory Window in Ta2O5 RRAM by Doping. In 47th IEEE Semiconductor Interface Specialists Conference X=ray window and method of mfr.|is a thin diamond membrane with on one surface an integral array of diamond rib supports. ZnO MESFETS for application to Intelligent Windows (Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor.