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Zijing Cui,Daolin Cai*,Yang Li, Chengxing Li and Zhitang Song. WN coating of TiN electrode to improve the reliability of phase change memory. Materials Science in Semiconductor Processing, 2022, 138: 106273.
Zhitang Song, Daolin Cai*. 12-state multi-level cell storage implemented in a 128 Mb phase change memory chip. Nanoscale, 2021
Chengxing Li, Daolin Cai*, Daohuan Feng, Zijing Cui, Weili Liu and Zhitang Song. Chemical Mechanical Polishing of TiN Film with Potassium Permanganate and L-Aspartic Acid in Alkaline Slurry. ECS Journal of Solid State Science and Technology, 2021, 10(7): 074009.
Zijing Cui, Daolin Cai*,Yang Li, Chengxing Li and Zhitang Song. Investigation of the effect of blade electrode width on performance of phase change memory. Semiconductor Science and Technology, 2021, 36(10):105003 (6pp).
Y. Cheng, D. L. Cai. Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access Memory. ACS Appl. Mater. Interfaces. 2020
Yang Li, Daolin Cai*, Yifeng Chen, Lei Wu, Yuanguang Liu, Shuai Yan, Li Yu, Weili Liu, and Zhitang Song. Optimization of driving current and crosstalk effect in epitaxial diode array for phase change memory application, Semiconductor Science and Technology,2020, 35(11).
Junjie Lu, Yifeng Chen, Daolin Cai, Lei Wu, Yuanguang Liu, Shuai Yan, Yang Li, Li Yu, and Zhitang Song. An Optimized Fast Stair-case Set Pulse with Variable Width for Phase Change Random Access Memory. ECS Journal of Solid State Science and Technology, 2020, 9(2).
Lei Wu, Daolin Cai*, Yifeng Chen, Yaoyao Lu, Yuanguang Liu, Sifan Zhang, Shuai Yan, Yang Li, Li Yu, Junjie Lu and Zhitang Song. Endurance Improvement of Phase Change Memory Based on High and Narrow RESET Currents. ECS Journal of Solid State Science and Technology, 2020, 9(3).
Yan Shuai, Cai Daolin*, Chen Yifeng, Xue Yuan, Liu Yuanguang, Lei Wu, Song Zhitang. Reliability Modelling and Prediction Method for Phase Change Memory Using Optimal Pulse Conditions. Journal of Shanghai Jiao Tong University (Science), 2020, 25(1): 1-9.
Yang Li, Yifeng Chen, Daolin Cai, Yaoyao Lu, Lei Wu, Yuanguang Liu, Shuai Yan, Junjie Lu, Li Yu, and Zhitang Song. Analysis and optimization of read/write reliability for 12F2 cross-point ultra-fast phase change memory. Semiconductor Science and Technology, 2019, 34(11).
Yaoyao Lu, Daolin Cai*, Yifeng Chen, Yonghui Zheng, Shuai Yan, Lei Wu, Yuanguang Liu, Yang Li, Zhitang Song. The impact of the electrode performance on the endurance properties of the phase change memory, IEEE Transactions on device and materials reliability, 2019, 19(1).
Yaoyao Lu, Daolin Cai*, Yifeng Chen, Yu Lei, Shuai Yan, Lei Wu, Yuanguang Liu, Yang Li, Zhitang Song. Improving the data retention of phase change memory by using a doping element in selected Ge2Sb2Te5, Journal of Semiconductor, 2019, 040(040).
Lei Wu, Yifeng Chen, Daolin Cai, Yaoyao Lu, Tianqi Guo, Yuanguang Liu, Xin Chen, Sifan Zhang, Shuai Yan, Yang Li, Zhitang Song. RESET current optimization for phase change memory based on the sub-threshold slope, Materials Science in Semiconductor Processing, 2019, 97.
Yuanguang Liu, Yifeng Chen, Daolin Cai, Yaoyao Lu, Lei Wu, Shuai Yan, Yang Li, Zhitang Song, Fast switching and low drift of TiSbTe thin films for phase change memory applications, Materials Science in Semiconductor Processing, 2019,91.
Yuanguang Liu, Yifeng Chen, Daolin Cai, Yaoyao Lu, Lei Wu, Shuai Yan, Yang Li, Junjie Lu, Li Yu, Zhitang Song, High performance of multilevel-cell phase change memory device with good endurance reliability. Semiconductor Science and Technology, 2019, 34(10): 105019.
Li Yu, Daolin Cai*, Yifeng Chen, Yaoyao Lu, Shuai Yan, Lei Wu, Yuanguang Liu, Yang Li, Junjie Lu, Zhitang Song. First set pulse impacts on set resistance distribution of phase change random access memory, ECS Journal of Solid State Science and Technology, 2019, 8(1).
Li Yu, Daolin Cai*, Yifeng Chen, Yaoyao Lu, Shuai Yan, Lei Wu, Yuanguang Liu, Yang Li, Junjie Lu, and Zhitang Song, Subsequent Set Pulse Impacts on Set Resistance Distribution of Phase Change Memory, Semiconductor Science and Technology, 2019, 34(10).
Yan Shuai, Cai Daolin*, Xue Yuan, Chen Yifeng, Liu Yuanguang, Wu Lei, Song Zhitang. Investigation on the Scaling Performances of Carbon Doped Ge2Sb2Te5 Thin Films for Phase Change Random Access Memory in a 40 nm Process[J]. Physica States Solidi A-Application and Materials Science, 2019, 216(22): 1900439.
Yan Shuai, Cai Daolin*, Xue Yuan, Guo Tianqi, Song Sannian, Song Zhitang. Sb-rich CuSbTe material: A candidate for high-speed and high-density phase change memory application[J]. Materials Science in Semiconductor Processing, 2019, 103: 104625.
Yaoyao Lu, Daolin Cai*, Yifeng Chen, Yu Lei, Shuai Yan, Lei Wu, Yuanguang Liu, Yang Li, Zhitang Song. The influence of the Bitline length on the resistance consistency in phase change memory array, ECS Journal of Solid State Science and Technology, 2018, 7(3).
Z. T. Song, D. L. Cai*, et.al., “High endurance phase change memory chip implemented based on carbon-doped Ge2Sb2Te5 in 40 nm node for embedded application,” 2018 IEEE International Electron Devices Meeting (IEDM) pp27.5.1–27.5.4.
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