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J.H. Yuan, G.Q. Mao, K.H. Xue, N. Bai, C.X. Wang, Y. Cheng, H.B. Lyu, H.J. Sun, X.S. Wang, X.S. Miao.Ferroelectricity in HfO2 from a Coordination Number Perspective. Chemistry of Materials, 2023, 35: 94-103.
C. Liu, Q.Y. Tang, Y.H. Zheng, J. Zhao, W.X. Song, Y. Cheng. Effect of vacancy ordering on the grain growth of Ge2Sb2Te5 film. Nanotechnology, 2023, 34: 155703.
C. Liu, Y.H. Zheng, T.J. Xin, Y.Z. Zheng, R. Wang, Y. Cheng. The Relationship between Electron Transport and Microstructure in Ge2Sb2Te5 Alloy. Nanomaterials, 2023, 13: 582.
P.H. Xu, T. Wei, J. Hu, M. Cheng, W.F. Li, Q.Q. Liu, R.R. Wang, Y. Ling, Y.H. Zheng, Y. Cheng, B. Liu.GeTe/CrSb2Te superlattice-like thin film for excellent thermal stability and high phase change speed. Journal of Alloys and Compounds, 2023, 942: 169073.
Y. Cheng#, Z.M. Gao#, K.H. Ye, H.W. Park, Y.H. Zheng, Y.Z. Zheng, J.F. Gao, M.H. Park, J.H. Choi, K.H. Xue, C.S. Hwang*, H.B. Lyu*. Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin films. Nature Communications, 2022, 13: 645.
Y.H. Zheng#, T.J. Xin#, J. Yang, Y.Z. Zheng, Z.M. Gao, Y.W. Wang, Y.L. Xu, Y. Cheng*, K. Du, D.Q. Su, R.W. Shao, B.X. Zhou, Z. Yuan, Q.L. Zhong, C. Liu, R. Huang, X.D. Tang, C.G. Duan, S.N. Song, Z.T. Song, H.B. Lyu*. In-situ atomic-level observation of reversible first-order transition in Hf0.5Zr0.5O2 ferroelectric film. IEEE International Electron Devices Meeting (IEDM), 2022: 6-3.
T.J. Xin#, Y.H. Zheng#, Y. Cheng*, K. Du, Y.W. Wang, Z.M. Gao, D.Q. Su, Y.Z. Zheng, Q.L. Zhong, C. Liu, R. Huang, C.G. Duan, S.N. Song, Z.T. Song, H.B. Lyu*. Atomic visualization of the emergence of orthorhombic phase in Hf0.5Zr0.5O2 ferroelectric film with in-situ rapid thermal annealing.Symposium on VLSI Technology, 2022: T7-4.
C. Liu#, Q.Y. Tang#, Y.H. Zheng*, B. Zhang, J. Zhao, W.X. Song, Y. Cheng*, Z.T. Song. The origin of hexagonal phase and its evolution process in Ge2Sb2Te5 alloy. APL Materials, 2022, 10: 021102.
刘成，赵进，辛天骄，郑勇辉，宋文雄，成岩. 功能材料与器件学报，2022.
许亦琳，辛天骄，郑赟喆，高兆猛，郑勇辉，成岩. 功能材料与器件学报，2022.
C. Yoo, J.W. Jeon, S. Yoon, Y. Cheng, G. Han, W. Choi, B. Park, G. Jeon, S. Jeon, W. Kim, Y. Zheng, J. Lee, J. Ahn, S. Cho, S.B. Clendenning, I.V. Karpov, Y.K. Lee, J.H. Choi, C.S. Hwang. Atomic layer deposition of Sb2Te3/GeTe superlattice film and its melt-quenching-free phase-transition mechanism for phase-change memory. Advanced Materials, 2022, 2207143.
P. Yuan, G.Q. Mao, Y. Cheng, K.H. Xue, Y.Z. Zheng, Y. Yang, P.F. Jiang, Y.N. Xu, Y. Wang, Y.H. Wang, Y.X. Ding, Y.T. Chen, Z.W. Dang, L. Tai, T.C. Gong, Q. Luo, X.S. Miao, Q. Liu. Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics. Nano Research, 2022, 15: 3667-3674.
Y. Peng, W.W. Xiao, Y. Liu, C.J. Jin, X.R. Deng, Y.Y. Zhang, F.N. Liu, Y.Z. Zheng, Y. Cheng, B. Chen, X. Yu, Y. Hao, G.Q. Han. HfO2-ZrO2 superlattice ferroelectric capacitor with improved endurance performance and higher fatigue recovery capability. IEEE Electron Device Letters, 2022, 43: 216-219.
Z. Shen, L. Liao, Y. Zhou, K. Xiong, J.H. Zeng, X.D. Wang, Y. C. J.J. Liu, T.L. Guo, S.K. Zhang, T. Lin, H. Shen, X.J. Meng, Y.W. Wang, Y. Cheng, J. Yang, P. Chen, L.F. Wang, X.D. Bai, J.H. Chu, J.L. Wang. Epitaxial growth and phase evolution of ferroelectric La-doped HfO2 films. Applied Physics Letters, 2022, 120: 162904.
J. Hu, C. Lin, L.Y. Peng, T. Wei, W.F. Li, Y. Ling, Q.Q. Liu, M. Cheng, S.N. Song, Z.T. Song, J. Zhou, Y. Cheng, Y.H. Zheng, Z.M. Sun, B. Liu. Cr-doped Sb2Te materials promising for high performance phase-change random access memory. Journal of Alloys and Compounds, 2022, 908: 164593.
C. Lin, J. Hu, T. Wei, W.F. Li, Y. Ling, Q.Q. Liu, M. Cheng, S.N. Song, Z.T. Song, Y. Cheng, Y.H. Zheng, B. Liu. Excellent thermal stability attributed to Cr dopant in Sb2Te phase change material. Materials Letters, 2022, 315: 131977.
D.G. Ding, S. Wang, Y.P. Xia, P. Li, D.L. He, J.Q. Zhang, S.W. Zhao, G.H. Yu, Y.H. Zheng, Y. Cheng, M.H. Xie, F. Ding, C.H. Jin. Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au (111) Substrate. ACS Nano, 2022, 16: 17356-17364.
F.R. Sui, M. Jin, Y.Y. Zhang, J. Hong, Y. Cheng, R.J. Qi, F.Y. Yue, R. Huang. Atomic insights into the influence of Bi doping on the optical properties of two-dimensional van der Waals layered InSe. Journal of Physics: Condensed Matter, 2022, 34: 224006.
Z. Guan, Y.F. Zhao, X.T. Wang, N. Zhong, X. Deng, Y.Z. Zheng, J.J. Wang, D.D. Xu, R.R. Ma, F.Y. Yue, Y. Cheng, R. Huang, P.H. Xiang, Z.M. Wei, J.H. Chu, C.G. Duan. Electric-field-induced room-temperature antiferroelectric–ferroelectric phase transition in Van der Waals layered GeSe. ACS Nano, 2022, 16: 1308-1317.
Y.Z. Zheng#, Y.H. Zheng#, Z.M. Gao, J.H. Yuan, Y. Cheng*, Q.L. Zhong, T.J. Xin, Y.W. Wang, C. Liu, Y.R. Huang, R. Huang, X.S. Miao, K.H. Xue*, H.B. Lyu*. Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf0.5Zr0.5O2 films: vacancy generation and lattice dislocation. IEEE International Electron Devices Meeting (IEDM), 2021: 33-5.
Y.Z. Zheng#, C.R. Zhong#, Y.H. Zheng, Z.M. Gao, Y. Cheng*, Q.L. Zhong, C. Liu, Y.W. Wang, R.J. Qi, R. Huang, H.B. Lyu*. In-situ atomic visualization of structural transformation in Hf0.5Zr0.5O2 ferroelectric thin film: from nonpolar tetragonal phase to polar orthorhombic phase. Symposium on VLSI Technology, 2021: T16-3.
Y. Cheng*, Y.H. Zheng, Z. T. Song, Reversible switching in bicontinuous structure for phase change random access memory application. Nanoscale, 2021, 13: 4678-4684.
Y.H. Zheng, Z. Chen, H. Lu, Y. Cheng*, X. Chen, Y.B. He*, Z.L. Zhang*. The formation of TiO2/VO2 multilayer structure via directional cationic diffusion. Nanoscale, 2021, 13: 7783-7791.
Q.L. Zhong, Y.W. Wang, Y. Cheng*, Z.M. Gao, Y.Z. Zheng, T.J. Xin, Y.H. Zheng, R. Huang, H.B. Lyu*. Optimization of the in situ biasing FIB sample preparation for hafnia-based ferroelectric capacitor. Micromachine, 2021, 12: 1436.
Z.M. Gao, Y.B. Luo, S.X. Lyu, Y. Cheng, Y.H. Zheng, Q.L. Zhong, W.F. Zhang*, H.B. Lyu*. Identification of ferroelectricity in capacitor with ultra-thin (1.5 nm) Hf0.5Zr0.5O2 film. IEEE Electron Device Letters, 2021, 42: 1301-1306.
Z.T. Song, D.L. Cai, Y. Cheng, L. Wang, S.L. Lv, T.J. Xin, G.M. Feng. 12-state multi-level cell storage implemented in a 128 Mb phase change memory chip. Nanoscale, 2021, 13: 10455-10461.
T.C. Gong, L. Tao, J.K. Li, Y. Cheng, Y.N. Xu, W. Wei, P.F. Jiang, P. Yuan, Y. Wang, Y.T. Chen, Y.X. Ding, Y. Yang, Y. Wang, B. Chen, Q. Luo, S. S Chung, S.X. Du, M. Liu. 105× Endurance Improvement of FE-HZO by an Innovative Rejuvenation Method for 1z Node NV-DRAM Applications. Symposium on VLSI Technology, 2021: T16-1.
M.H. Ao, S.Z. Zheng, Q.L. Zhong, W.D. Zhang, X. Hou, X.J. Chai, C. Wang, H.C. Fan, J.W. Lian, Y. Cheng, J. Wang, J. Jiang, A.Q. Jiang. In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films. ACS Applied Materials Interfaces, 2021, 13: 33291-33299.
W.Q. Xu, Y.H. Zheng, Y. Cheng, R.J. Qi*, H. Peng, H.C. Lin, R. Huang*. Understanding the effect of Al doping on the electrochemical performance improvement of the LiMn2O4 cathode material. ACS Applied Materials Interfaces, 2021, 13: 45446-45454.
C. Li, H.L. Song, Y. Cheng, R.J. Qi, R. Huang, C.Q. Cui, Y.F. Wang, Y. Zhang, L. Miao. Highly Suppressed Thermal Conductivity in Diamond-like Cu2SnS3 by Dense Dislocation. ACS Applied Energy Materials, 2021, 4: 8728-8733.
W.Q. Xu, Y.H. Zheng, L.N. Lin, W.B. Lei, Z.G. Wang, H.L. Song, Y. Cheng, R.J. Qi, H. Peng, H.C. Lin, Z.Z. Yang, R. Huang. Atomic Insights into Surface Orientations and Oxygen Vacancies in the LiMn2O4 Cathode for Lithium Storage. Journal of Alloys and Compounds, 2021, 870: 159387.
L.N. Lin, Q.L. Zhong, Y.Z. Zheng, Y. Cheng, R.J. Qi, R. Huang. Size effect of Au nanoparticles in Au-TiO2-x photocatalyst. Chemical Physics Letters, 2021, 770: 138457.
Q.L. Zhong, X. Deng, L.N. Lin, H.L. Song, Y.Z. Zheng, Y. Cheng, P.H. Xiang, N. Zhong, R.J. Qi, C.G. Duan, R. Huang. Revealing a high-density three-dimensional Ruddlesden-Popper-type fault network in an SmNiO3 thin film. Journal of Materials Research, 2021, 36: 1637-1645.
W.Q. Xu, H.K. Li, Y.H. Zheng, W.B. Lei, Z.G. Wang, Y. Cheng, R.J. Qi, H. Peng, H.C. Lin, F.Y. Yue, R. Huang. Atomic Insights into Ti Doping on the Stability Enhancement of Truncated Octahedron LiMn2O4 Nanoparticles. Nanomaterials, 2021, 11: 508.
Q. Luo#, Y. Cheng#, J.G. Yang, R.R. Cao, H.L. Ma, Y. Yang, R. Huang, W. Wei, Y.H. Zheng, T.C. Gong, J. Yu, X.X. Xu, P. Yuan, X.Y. Li, L. Tai, H.R. Yu, D.S. Shang, Q. Liu, B. Yu, Q.W. Ren, H.B. Lv*, M. Liu*. A highly CMOS compatible hafnia-based ferroelectric diode. Nature Communications, 2020, 11: 1391.
W.X. Song#, Y. Cheng#, D.L. Cai, Q.Y. Tang, Z.T. Song*, L.H. Wang, J. Zhao, T.J. Xin, Z. P. Liu. Improving the performance of phase-change memory by grain refinement. Journal of Applied Physics, 2020, 128: 075101.
Y. Cheng*, D.L. Cai#, Y.H. Zheng#, S. Yan, L. Wu, C. Li, W.X Song*, T.J. Xin, S.L. Lv, R. Huang, H.B. Lv, Z.T. Song*, S.L. Feng. Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access Memory. ACS Applied Materials & Interfaces, 2020, 12: 23051-23059.
C.R. Zhong#, R.J. Qi#, Y.H. Zheng, Y. Cheng*, W.X. Song*, R. Huang. The Relationships of Microscopic Evolution to Resistivity Variation of a FIB-Deposited Platinum Interconnector. Micromachines, 2020, 11: 588.
Q.Y. Tang#, T.Z. He#, K. Yu, Y. Cheng*, R.J. Qi*, R. Huang, J. Zhao, W.X. Song, Z.T. Song. The effect of thickness on texture of Ge2Sb2Te5 phase-change films. Journal of Materials Science: Materials in Electronics, 2020, 31:5848-5853.
Y.H. Zheng#, R.J. Qi#, Y. Cheng*, Z.T. Song. The crystallization mechanism of Zirconium doped Sb2Te3 material for phase change random-access memory application.Journal of Materials Science: Materials in Electronics, 2020, 31:5861-5865.
R.J. Qi#, Y. Cheng*. Synthesis of Se nanowires at room temperature using selenourea as Se source. Journal of Materials Science: Materials in Electronic, 2020, 31: 5843-5847.
Y. Xue, Y. Cheng, Y.H. Zheng, S. Yan, W.X. Song, S.L. Lv, S.N. Song*, Z.T. Song*. Phase change memory based on Ta-Sb-Te alloy-towards a universal memory. Materials Today Physics, 2020, 15: 100266.
H.L. Song, C. Li, C.-K. Wang, J.-C. Yang, J.J. Lin, L. Sun, Y. Cheng, R.J. Qi, R. Huang, Y.-H. Chu, C.-G. Duan. Revealing a metastable cubic phase in CoFe2O4–SrTiO3 three-dimensional network heteroepitaxial nanostructure. Journal of Applied Physics, 2020, 128: 225303.
L.N. Lin, X.Y. Feng, D.P. Lan, Y. Chen, Q.L. Zhong, C. Liu, Y. Cheng, R.J. Qi, J.P. Ge, C.Z. Yu, C.-G. Duan, R. Huang. Coupling Effect of Au Nanoparticles with the Oxygen Vacancies of TiO2-x for Enhanced Charge Transfer. Journal of Physical Chemistry C, 2020, 124: 23823-23831.
C. Liu#, J. Wang#, J.J. Wan*, Y. Cheng, R. Huang, C.Q. Zhang, W.L. Hu, G.F. Wei*, C.Z. Yu*. Amorphous Metal–Organic Framework‐Dominated Nanocomposites with Both Compositional and Structural Heterogeneity for Oxygen Evolution.Angewandte Chemie-International Edition, 2020, 59: 3630-3637.
Y.H. Zheng, Y. Wang, T.J. Xin, Y. Cheng*, R. Huang, P. Liu, M. Luo, Z.L. Zhang, S.L. Lv, Z.T. Song*, S.L. Feng. Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te5. Communications Chemistry, 2019, 2: 13.
K. Ren*, Y. Cheng*, M.J. Xia, S.L. Lv, Z.T. Song. In-situ observation of Ge2Sb2Te5 crystallization at the passivated interface. Ceramics International, 2019, 45: 19542-19546.
Q. Luo, J. Yu, X.M. Zhang, K.H. Xue, J.H. Yuan, Y. Cheng, T.C. Gong, H.B. Lv*, X.X. Xu, P. Yuan, J.H. Yin, L. Tai, S.B. Long, Q. Liu, X.S. Miao, J. Li, M. Liu*. Nb1-xO2 based universal selector with ultra-high endurance (>1012), high speed (10ns) and excellent Vth stability, 2019 Symposium on VLSI Technology, 2019, T236-T237.
W.X. Zhang, H. Song, Y. Cheng, C. Liu, C.H. Wang, M.A.N. Khan, H. Zhang, J.Z. Liu, C.Z. Yu*, L.J. Wang, J.S. Li*. Core–Shell Prussian Blue Analogs with Compositional Heterogeneity and Open Cages for Oxygen Evolution Reaction. Advanced Science. 2019, 6: 1801901.
X. Chen, X.Q. Liu*, Y. Cheng, Z.T. Song*. The impact of vacancies on the stability of cubic phases in Sb-Te binary compounds. NPG Asia Materials, 2019, 11: 40.
Y. Wang, T.Q. Guo, G.Y. Liu, T. Li, S.L. Lv, S.N. Song, Y. Cheng, W.X. Song, K. Ren, Z.T. Song*. Sc-Centered Octahedron Enables High-Speed Phase Change Memory with Improved Data Retention and Reduced Power-Consumption. ACS Applied Materials & Interfaces, 2019, 11: 10848-10855.
L.N Lin, Y.L. Ma, J.B. Wu*, F. Pang, J.P. Ge*, S. Sui, Y.F. Yao, R.J. Qi, Y. Cheng, C.G. Duan, J.H. Chu, R. Huang*, Origin of Photocatalytic Activity in Ti4+/Ti3+ Core–Shell Titanium Oxide Nanocrystals. Journal of Physical Chemistry C, 2019, 123, 34: 20949.
C.R. Zhong, L.N. Lin, R.J. Qi, Y. Cheng, X.S. Gao, R. Huang*. Plan-view Sample Preparation of a Buried Nanodots Array by FIB with Accurate EDS Positioning in Thickness Direction. Ultramicroscopy, 2019, 207: 112840.
M.X. Jia, Z.Q. Ren, Y.D. Liu, Y. Cheng, R. Huang, P.H. Xiang, X.D. Tang, B.B. Tian, N. Zhong*, C.G. Duan. Ferroelectric polarization-controlled resistive switching in BaTiO3/SmNiO3 epitaxial heterostructures. Applied Physics Letters, 2019, 114: 102901.
Y. Wang, T.B. Wang, G.Y. Liu, T.Q. Guo, T. Li, S.L. Lv, Y. Cheng, S.N. Song, K. Ren, Z.T. Song*. High thermal stability and fast speed phase change memory by optimizing GeSbTe with Scandium doping. Scripta Materialia, 2019, 164: 25-29.
X. Chen, Y.H. Zheng, M. Zhu, K. Ren, Y. Wang, T. Li, G.Y. Liu, T.Q. Guo, L. Wu, X.Q. Liu, Y. Cheng*, Z.T. Song. Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application. Scientific Reports, 2018, 8: 6839.
Q. Luo, T.C. Gong, Y. Cheng, Q.Z. Zhang, H.R. Yu, J. Yu, H.L. Ma, X.X. Xu, K.L. Huang, X. Zhu, D.N. Dong, J.H. Yin, P. Yuan, L. Tai, J.F. Gao, J.F. Li, H.X. Yin, S.B. Long, Q. Liu, H.B. Lv*, M. Liu*, Hybrid 1T e-DRAM and e-NVM realized in one 10 nm node Ferro FinFET device with charge trapping and domain switching effects. IEEE International Electron Devices Meeting (IEDM), 2018.
C. Li, H.L. Song, Y.W. Shen, Y.F. Wang, Y. Cheng, R.J. Qi, S.Y. Chen, C.G. Duan, R. Huang. Evolution of cation ordering and crystal defects controlled by Zn substitutions in Cu2SnS3 ceramics, AIP Advances, 2018, 8: 105322.
C. Li, Y.W. Shen, H.L. Song, Y.F. Wang, S.Y. Chen, R.J. Qi, Y. Cheng, C.G. Duan, R. Huang. Microstructure of Cu2S nanoprecipitates and its effect on electrical and thermal properties in thermoelectric Cu2Zn0.2Sn0.8S3 ceramics. AIP Advances, 2018, 8: 085105.
T.Q. Guo, S.N. Song, Z.T. Song, X.L. Ji, Y. Xue, L.L. Chen, Y. Cheng, B. Liu, L.C. Wu, M. Qi, S.L. Feng. SiC-Doped Ge2Sb2Te5 Phase-Change Material: A Candidate for High-Density Embedded Memory Application. Advanced Electronic Materials, 2018, 4: 1800083.
Y. Wang, Y.H. Zheng, G.Y. Liu, T. Li, T.Q. Guo, Y. Cheng, S.L. Lv, S.N. Song, K. Ren*, Z.T. Song*. Scandium doped Ge2Sb2Te5 for high-speed and low-power-consumption phase change memory. Applied Physics Letters, 2018, 112: 133104.
Y. Wang, T.B. Wang, Y.H. Zheng, G.Y. Liu, T. Li, S.L. Lv, W.X. Song, S.N. Song, Y. Cheng, K. Ren*, Z.T. Song, Atomic scale insight into the effects of Aluminum doped Sb2Te for phase change memory application. Scientific Reports, 2018, 8: 15136.
Y.H. Zheng, Y. Cheng*, R. Huang, R.J. Qi, F. Rao*, K.Y. Ding, W.J. Yin, S.S. Song, W.L. Liu, Z.T. Song, S.L. Feng. Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge2Sb2Te5 Thin Film. Scientific Reports, 2017, 7: 5915.
K. Ren, Y. Cheng*, X. Chen, K.Y. Ding, S.L. Lv, W.J. Yin, X.H. Guo, Z.G. Ji, Z.T. Song*. Carbon layer application in phase change memory to reduce power consumption and atomic migration. Materials Letters, 2017, 206: 52-55.
L. Zhang, S.N. Song, H. Lin, Y. Cheng, W. Xi, L. Li, Y. He, Z.T. Song. Local structure characteristics of Sb2Te3 films studied by reverse Monto Carlo modeling. Nuclear Science and Techniques, 2017, 28: 38.
L.L. Shen, S.N. Song, Z.T. Song, L. Li, T.Q. Guo, Y. Cheng, L.C. Wu, B. Liu, S.L. Feng. Properties of Ti-Sb-Te doped with SbSe alloy for application in nonvolatile phase change memory. Journal of Materials Science: Materials in Electronics, 2017, 28: 923-927.
Y. Liu, H. Wang, B. Liu, Y. Cheng, S.N. Song, L.C. Wu, D. Zhou, Z.T. Song. Trapping analysis and countermeasure for arsenic auto-doping in 40-nm epitaxial diode arrays and CMOS integration. Materials Science in Semiconductor Processing, 2017, 71: 326-331.
G.Y. Liu, L.C. Wu, M. Zhu, Z.T. Song, F. Rao, S.N. Song, Y. Cheng. The investigations of characteristics of Sb2Te as a base phase-change material. Solid-State Electronics, 2017, 135: 31-36.
G.Y. Liu, L.C. Wu, Z.T. Song, F. Rao, S.N. Song, Y. Cheng. Stability of Sb2Te Crystalline Films for Phase Change Memory. Materials Science Forum, 2017, 898: 1829-1833.
Y.H. Zheng, M.J. Xia, Y. Cheng*, F. Rao*, K.Y. Ding, W.L. Liu, J. Yu, Z.T. Song, S.L. Feng. Direct observation of metastable face-centered cubic Sb2Te3 crystal. Nano Research, 2016, 11: 3453-3462.
Y.H. Zheng, Y. Cheng*, M. Zhu, X.L. Ji, Q. Wang, S.N. Song, Z.T. Song, W.L. Liu, S.L. Feng. A candidate Zr-doped Sb2Te alloy for phase change memory application. Applied Physics Letters, 2016, 108: 052107.
Y.H. Zheng, Y. Cheng*, Z.T. Song, W.J. Yin, M. Zhu, W.L. Liu, S.N. Song, S.L. Feng. Self-precipitated process of Te nanowire from Zr-doped Sb2Te3 film. Materials Science Forum, 2016, 848: 489.
L.L. Shen, S.N. Song, Z.T. Song, L. Li, T.Q. Guo, Y. Cheng, S.L. Lv, L.C. Wu, B. Liu, S.L. Feng. Surface etching mechanism of carbon-doped Ge2Sb2Te5 phase change material in fluorocarbon plasma. Applied Physics A-Materials Science & Processing, 2016, 122: 1-6.
K.Y. Ding, F. Rao*, S.L. Lv, Y. Cheng, W.L. Liu, Z.T. Song. Low-energy amorphization of Ti1Sb2Te5 phase change alloy induced by TiTe2 nano-lamellae. Scientific Reports, 2016, 6: 30645.
S.N. Song, L.L Shen, Z.T. Song, D.N. Yao, T.Q. Guo; L. Li, B. Liu, L.C. Wu, Y. Cheng, Y.Q. Ding, S.L. Feng. Phase change properties of Ti-Sb-Te thin films deposited by thermal atomic layer deposition. 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, 9818: 98180N.
L.L. Shen, S.N. Song, Z.T. Song, L. Li, T.Q. Guo, B. Liu, L.C. Wu, Y. Cheng, S.L. Feng. Reactive ion etching effects on carbon-doped Ge2Sb2Te5 phase change material in CF4/Ar plasma. 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, 9818: 98180M.
Y.J. Chen, B. Zhang, Q.Q. Ding, Q.S. Deng, Y. Cheng, Z.T. Song, J.X. Li, Z. Zhang, X.D. Han. Microstructure evolution of the phase change material TiSbTe. 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, 9818: 98180B.
Q. Wang, B. Liu, Y.Y. Xia, Y.H. Zheng, S.N. Song, Y. Cheng, Z.T. Song, S.L. Feng. Electrical properties of Cr-doped Sb2Te3 phase change material. 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, 9818: 98180H.
Z.H. Zhang, S.N. Song, Z.T. Song, L. Li, L.L. Shen, T.Q. Guo, Y. Cheng, S.L. Lv, L.C. Wu, B. Liu, S.L. Feng. Performance Improvement of Phase Change Memory Cell by using a Tantalum Pentoxide Buffer Layer. Materials Science Forum, 2016, 848: 425-429.
L.L. Cao, L.C. Wu, Z.T. Song, W.Q. Zhu, Y.H. Zheng, Y. Cheng, S.N. Song, Z.Y. Ma, L. Xu. Investigation of Ni doped Ge-Te materials for high temperature phase change memory applications. Materials Science Forum, 2016, 848: 460-465.
Y.H. Zheng, Y. Cheng, Z.T. Song, W.J. Yin, M. Zhu, W.L. Liu, S.N. Song, S.L. Feng. Self-precipitated Process of Te Nanowire from Zr-doped Sb2Te3 Film. Materials Science Forum, 2016, 848: 489-493.
Y. Cheng, S.N. Song, Z.H. Zhang, Z.T. Song, B. Liu, S.L. Feng, Z. Zhang, Electron beam annealing for component optimization in Si-Sb-Te material. Materials Science Forum, 2015, 815: 44-48.
F. Rao, Z.T. Song, Y. Cheng, X.S. Liu, M.J. Xia, W. Li, K.Y. Ding, X.F. Feng, M. Zhu, S.L. Feng, Direct observation of titanium-centered octahedral in titanium–antimony–tellurium phase-change material. Nature communications, 2015, 6:10040.
M. Zhu, M.J. Xia, Z.T. Song, Y. Cheng, L.C. Wu, F. Rao, S.N. Song, M. Wang, Y.G. Lv, S.L. Feng, Understanding the crystallization behavior of as-deposited Ti–Sb–Te alloys through real-time radial distribution functions. Nanoscale, 2015, 7: 9935-9944.
M.J. Xia, M. Zhu, Y.C. Wang, Z.T. Song, F. Rao, L.C. Wu, Y. Cheng, S.N. Song, Ti?Sb?Te alloy: a candidate for fast and long-life phase-change memory. ACS Applied Materials & Interfaces, 2015, 7: 7627-7634.
L. Li, S.N. Song, Z.H. Zhang, Z.T. Song, Y. Cheng, S.L. Lv, L.C. Wu, B. Liu, S.L. Feng, Investigation of Cr0.06(Sb4Te)0.94 alloy for high-speed and high data-retention phase change random access memory applications. Applied Physics A, 2015, 120: 537.
L.L. Shen, S.N. Song, Z.H. Zhang, Z.T. Song, Y. Cheng, Y.Q. Zhu, X.H. Guo, W.J. Yin, D.N. Yao, B. Liu, S.L. Feng, Characteristics and mechanism of phase change material W0.03Sb2Te etched by Cl2/BCl3 inductively coupled plasmas. Thin Solid Films, 2015, 593: 67-70.
L. Li, S.N. Song, Z.H. Zhang, Y.Q. Zhu, Z.T. Song, Y. Cheng, S.L. Lv, B. Liu, L.L. Chen, Thickness dependent nano-crystallization in Ti0.43Sb2Te3 films and its effect on devices. Thin Solid Films, 2015, 590: 13-16.
Q. Wang, B. Liu, Y.Y. Xia, Y.H. Zheng, R.R. Huo, Q. Zhang, S.N. Song, Y. Cheng, Z.T. Song, Cr-doped Ge2Sb2Te5 for ultra-long data retention phase change memory. Applied Physics Letters, 2015, 107: 222101.
Q. Wang, B. Liu, Y.Y. Xia, Y.H. Zheng, R.R. Huo, M. Zhu, S.N. Song, S.L. Lv, Y. Cheng, Z.T. Song, S.L. Feng, Characterization of Cr-doped Sb2Te3 films and their application to phase-change memory. physica status solidi (RRL) - Rapid Research Letters, 2015, 9: 470-474.
S.N. Song, D.N. Yao, Z.T. Song, L.N. Gao, Z.H. Zhang, L. Li, L.L. Shen, L.C. Wu, B. Liu, Y. Cheng, S.L. Feng, Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon. Nanoscale Research Letters, 2015, 10:89.
宋志棠，成岩，相变存储器及其发展。《功能材料信息》，2014年第5期。
Y.C. Wang, X.G. Chen, Y. Cheng, X.L. Zhou, S.L. Lv, Y.F. Chen, Y.Q. Wang, M. Zhou, H.P. Chen, Y.Y. Zhang, Z.T. Song, G.M. Feng, RESET Distribution Improvement of Phase Change Memory: The Impact of Pre-Programming. IEEE Electron Device Letters, 2014, 35: 536-538.
Y.C. Wang, Y.F. Chen, D.L. Cai, Y. Cheng, X.G. Chen, Y.Q. Wang, M.J. Xia, M. Zhou, G.Z. Li, Y.Y. Zhang, D. Gao, Z.T. Song, G.M. Feng, Understanding the early cycling evolution behaviors for phase change memory application. Journal of Applied Physics, 2014, 116: 204503.
Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, C. Peng, L. Zhang, D.C. Cao, X.H. Guo, W.J. Yin, L.C. Wu, B. Liu, Characteristics and mechanism of Al1.3Sb3Te etched by Cl2/BCl3 inductively coupled plasmas. Microelectronic Engineering, 2014, 115: 51-54.
Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, M. Zhu, X.Y. Li, Y.Q. Zhu, X.H. Guo, W.J. Yin, L.C. Wu, B. Liu, S.L. Feng, D. Zhou, Etching of new phase change material Ti0.5Sb2Te3 by Cl2/Ar and CF4/Ar inductively coupled plasmas.Applied Surface Science, 2014, 311: 68-73.
Z.H. Zhang, Y.F. Gu, S.N. Song, Z.T. Song, Y. Cheng, B. Liu, Y.Q. Zhu, D. Zhou, S.L. Feng, Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memory application. Journal of Applied Physics, 2014, 116: 074304.
X.P. Wang, N.K. Chen, X.B. Li,* Y. Cheng, X.Q. Liu, M.J. Xia, Z.T. Song, X.D. Han, S.B. Zhang*, H.B. Sun*, Role of the nano amorphous interface in the crystallization of Sb2Te3 towards non-volatile phase change memory: insights from first principles. Physical Chemistry Chemical Physics, 2014, 16: 10810.
Y. Cheng, Y.F. Gu, Z.T. Song, S.N. Song, F. Rao, L.C. Wu, B. Liu, S.L. Feng, Investigation of Sb-rich Sb-Te binary films used as phase change material. In 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, Proceedings of SPIE, 2013, 8782: 87820H.
Y.G. Lu, S.N. Song, Z.T. Song, Y. Cheng, L.C. Wu, B. Liu, Crystallization behavior of Ge2Te3-TiO2 film for phase-change random access memory application, In 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, Proceedings of SPIE, 2013, 8782: 87820K.
Z.H. Zhang, C. Peng, S.N. Song, Z.T. Song, Y. Cheng, K. Ren, X.Y. Li, F. Rao, B. Liu, S.L. Feng. Characterization of Cu doping on GeTe for phase change memory application. Journal of Applied Physics, 2013, 114: 244311.
Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, F. Rao, L.C. Wu, B. Liu, B. Chen, Y.G. Lu, Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory application. Applied Physics Letters, 2013, 103: 142112.
Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, Y.F. Gu, B. Chen, Characterization of the thermal properties for Si-implanted Sb2Te3 phase change material. Applied Physics Letters, 2013, 102: 252106.
Y.F. Gu, S.N. Song, Z.T. Song, B.S. Yuan, Y. Cheng, Z.H. Zhang, B. Liu, S.L. Feng, Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory, Applied Physics Letters, 2013, 102: 103110.
C. Peng, L.C. Wu, F. Rao, Z.T. Song, S.L. Lv, X.L. Zhou, X.F. Du, Y. Cheng, P.X. Yang, J.H. Chu, A simple method used to evaluate phase-change materials based on focused-ion beam technique. Applied Physics Letters, 2013, 102: 203510.
X.L. Zhou, L.C. Wu, Z.T. Song, Y. Cheng, F. Rao, K. Ren, S.N. Song, B. Liu, S.L. Feng, Nitrogen-doped Sb-rich Si-Sb-Te phase-change material for high performance phase-change memory. Acta Materialia, 2013, 61: 7324-7333.
M. Zhu, L.C. Wu, F. Rao, Z.T. Song, X.L. Ji, D.N. Yao, Y. Cheng, S.L. Lv, S.N. Song, B. Liu, L. Xu, The effect of Titanium doping on the structure and phase change characteristics of Sb4Te.Journal of Applied Physics, 2013, 114: 124302.
Y.F. Gu, S.N. Song, Z.T. Song, Y. Cheng, X.Y. Liu, X.F. Du, B. Liu, S.L. Feng, Reactive ion etching of SixSb2Te in CF4/Ar plasma for nonvolatile phase-change memory device. Journal of Nanoscience and Nanotechnology, 2013, 13: 1594-1597.
Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, Y.F. Gu, L.C. Wu, B. Liu, S.L. Feng, Study on GeGaSbTe film for long data retention phase change memory application. Journal of Non Crystalline Solids, 2013, 381: 54.
N. Yan, Y. Cheng, X.Q. Liu, Z.T. Song, Z. Zhang, In situ transmission electron microscopy investigation of SixSb100-x phase-change materials.Materials Letters, 2012, 84: 20-23.
F. Rao, Z.T. Song, Y. Cheng, M.J. Xia, K. Ren, L.C. Wu, B. Liu, S.L. Feng, Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials. Acta Materialia, 2012, 60: 323-328.
K. Ren, F. Rao, Z.T. Song, S.L. Lv, Y. Cheng, L.C. Wu, C. Peng, X.L. Zhou, M.J. Xia, B. Liu, S.L. Feng, Pseudobinary Al2Te3-Sb2Te3 material for high speed phase change memory application. Applied Physics Letters, 2012, 100: 052105.
Y.F. Gu, S.N. Song, Z.T. Song, Y. Cheng, X.F. Du, B. Liu, S.L. Feng, SixSb2Te materials with stable phase for phase change random access memory applications.Journal of Applied Physics, 2012, 111: 054319.
L. Zhang, L.X. Gu, X.D. Han, H. Huang, Y.N. Dai, Y. Cheng, Y. Wang, Z. Zhang, Y.Q. Wu, B. Liu, Z.T. Song, The influence of sputtering power on phase-change films. Electrochemical and Solid-State Letters, 2012, 15: H205.
Y.G. Lu, S.N. Song, Z.T. Song, W.C Ren, Y.L. Xiong, F. Rao, L.C. Wu, Y. Cheng, B. Liu, Superlattice-like GaSb/Sb2Te3 films for low-power phase change memory. Scripta Materialia, 2012, 66: 702-705.
X. Zhang, F. Rao, B. Liu, C. Peng, X.L. Zhou, D.N. Yao, X.H. Guo, S.N Song, S.N. Song, L.Y. Wang, Y. Cheng, L.C. Wu, Z.T. Song, S.L. Feng. Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma, Journal of Semiconductors, 2012, 33: 102003.
X. Zhang, B. Liu, C. Peng, F. Rao, X.L. Zhou, S.N. Song, L.Y. Wang, Y. Cheng, L.C. Wu, D.N. Yao, Z.T. Song, S.L. Feng. Germanium Nitride as a buffer layer for phase change memory, Chinese Physics Letters, 2012, 29: 107201.
Y. Cheng, Z.T. Song, Y.F. Gu, S.N. Song, F. Rao, L.C. Wu, B. Liu, S.L Feng, Influence of silicon on the thermally induced crystallization process of Si-Sb4Te phase change materials. Applied Physics Letters, 2011, 99: 261914.
X.L. Zhou, L.C. Wu, Z.T. Song, F. Rao, Y. Cheng, C. Peng, D.N. Yao, S.N. Song, B. Liu, S.L. Feng, B. Chen, Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state. Applied Physics Letters, 2011, 99: 032105.
F. Rao, Z.T. Song, K. Ren, X.L. Zhou, Y. Cheng, L.C. Wu, B. Liu, Si-Sb-Te materials for phase change memory applications. Nanotechnology, 2011, 22: 145702.
T. Zhang, Z.T. Song, Y.F. Gu, Y. Cheng, B. Liu, S.L. Feng, Mechanism of oxidation on Si2Sb2Te5 phase change material and its application. Japanese Journal of Applied Physics, 2011, 50: 020202.
Y.F. Gu, Y. Cheng, S.N. Song, T. Zhang, Z.T. Song, Y.X. Liu, X.F. Du, B. Liu, S.L Feng, Advantages of SixSb2Te phase-change material and its applications in phase-change random access memory. Scripta Materialia, 2011, 65: 622-625.
K. Ren, F. Rao, Z.T. Song, Y. Cheng, L.C. Wu, X.L. Zhou, Y.F. Gong, M.J. Xia, B. Liu, S.L. Feng, Study on the crystallization behaviors of Si2Sb2Tex materials. Scripta Materialia, 2011, 64: 685-688.
L.C. Wu, X.L. Zhou, Z.T. Song, M. Zhu, Y. Cheng, F. Rao, S.N. Song, B. Liu, S.L. Feng. Sb-rich Si-Sb-Te phase-change material for phase-change random access memory applications, IEEE Transactions on Electron Devices. 2011, 58: 4423-4426.
Y.G. Lu, S.N. Song, Z.T. Song, W.C. Ren, Y. Cheng, B. Liu, Crystallization process of amorphous GaSb5Te4 film for high-speed phase change memory. Applied Physics Express, 2011, 4: 094102.
Y.G. Lu, S.N. Song, Z.T. Song, W.C. Ren, C. Peng, Y. Cheng, B. Liu. Investigation of HfO2 doping on GeTe for phase change memory. Solid State Sciences, 2011, 13: 1943-1947.
X.L. Zhou, L.C. Wu, Z.T. Song, F. Rao, K. Ren, Y. Cheng, B. Liu, D.N. Yao, S.L. Feng, B. Chen. Investigation on Phase Change Behaviors of Si-Sb-Te Alloy: The Effect of Tellurium Segregation. MRS Online Proceeding Library (OPL), 2011, 1337.
Y. Cheng, N. Yan, X.D. Han, Z. Zhang, T. Zhang, Z.T. Song, B. Liu, S.L. Feng, Thermally induced phase separation of Si-Sb-Te alloy. Journal of Non-Crystalline Solids, 2010, 356: 884-888.
Y. Cheng, X.D. Han, X.Q. Liu, K. Zheng, Z. Zhang, T. Zhang, Z.T. Song, B. Liu, S.L Feng. Self- extrusion of Te-nanowire from Si-Sb-Te thin films. Applied Physics Letters, 2008, 93: 183113.
T. Zhang, Y. Cheng, Z.T. Song, B. Liu, S.L Feng, X.D. Han, Z. Zhang, B. Chen. Comparison of the crystallization of Ge-Sb-Te and Si-Sb-Te in a constant-temperature annealing process. Scripta Materialia, 2008, 58: 977-980.
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