近期论文
查看导师新发文章
（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）
Rui Wang, Tuo Shi*, Xumeng Zhang, Jinsong Wei, Jian Lu, Jiaxue Zhu, Zuheng Wu, Qi Liu*, and Ming Liu, “Implementing in-situ self-organizing maps with memristor crossbar arrays for data mining and optimization”, Nature Communications, 13, 2289, 2022.
Jiaxue Zhu, Xumeng Zhang, Rui Wang, Ming Wang, Pei Chen, Lingli Cheng, Zuheng Wu, Yongzhou Wang, Qi Liu*, and Ming Liu, “A heterogeneously integrated spiking neuron array for multimode-fused perception and object classification”, Advanced Materials, 2200481, 2022.
Pei Chen, Xumeng Zhang*, Zuheng Wu, Yongzhou Wang, Jiaxue Zhu, Yunxia Hao, Guan Feng, Yize Sun, Tuo Shi, Ming Wang, and Qi Liu*, “High-yield and uniform NbOx-based threshold switching devices for neuron applications”, IEEE Transactions on Electron Devices, 69(5), 2391-2397, 2022.
Yongzhou Wang, Hui Xu, Wei Wang, Xumeng Zhang, Zuheng Wu, Ran Gu, Qingjiang Li*, and Qi Liu*, “A configurable artificial neuron based on a threshold-tunable TiN/NbOx/Pt Memristor”, IEEE Electron Device Letters, 43(4), 631-634, 2022.
Jiaxue Zhu, Xumeng Zhang, Ming Wang, Rui Wang, Pei Chen, Lingli Cheng, and Qi Liu*, “An artificial spiking nociceptor integrating pressure sensors and memristors”, IEEE Electron Device Letters, 43 (6), 962-965, 2022.
Jiabin Shen#, Shujing Jia#, Nannan Shi, Qingqin Ge, Tamihiro Gotoh, Shilong Lv, Qi Liu, Richard Dronskowski, Stephen R. Elliott, Zhitang Song*, and Min Zhu*, “Elemental electrical switch enabling phase segregation-free operation”, Science, 374, 1390-1394, 2021.
Xumeng Zhang#, Jian Lu#, Zhongrui Wang, Rui Wang, Jinsong Wei, Tuo Shi, Chunmeng Dou, Zuheng Wu, Jiaxue Zhu, Dashan Shang, Guozhong Xing, Mansun Chan, Qi Liu*, and Ming Liu, “Hybrid memristor-CMOS neurons for in-situ learning in fully hardware memristive spiking neural networks”, Science Bulletin, 66, 1624-1633, 2021.
Tuo Shi, Rui Wang, Zuheng Wu, Yize Sun, Junjie An, and Qi Liu*, “A review of resistive switching devices, performance improvement, characterization, and applications”, Small Structures, 2000109, 2021. (Review)
Yifei Pei#, Lei Yan#, Zuheng Wu#, Jikai Lu, Jianhui Zhao, Jingsheng Chen, Qi Liu*, and Xiaobing Yan*, “Artificial visual perception nervous system based on low-dimensional material photoelectric memristors”, ACS Nano, 15 (11), 17319-17326, 2021.
Ying Zhang, Ge-Qi Mao, Xiaolong Zhao*, Yu Li, Meiyun Zhang, Zuheng Wu, Wei Wu, Huajun Sun, Yizhong Guo, Lihua Wang, Xumeng Zhang, Qi Liu, Hangbing Lv, Kan-Hao Xue*, Guangwei Xu, Xiangshui Miao, Shibing Long*, and Ming Liu*, “Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging”, Nature Communications, 12, 7232, 2021.
Zuheng Wu#, Jikai Lu#, Tuo Shi, Xiaolong Zhao, Xumeng Zhang, Yang Yang, Facai Wu, Yue Li, Qi Liu*, and Ming Liu, “A habituation sensory nervous system with memristors”, Advanced Materials, 32(46), 2004398, 2020.
Shujing Jia#, Huanglong Li#, Tamihiro Gotoh, Christophe Longeaud, Bin Zhang, Juan Lyu, Shilong Lv, Min Zhu*, Zhitang Song*, Qi Liu*, John Robertson, and Ming Liu, “Ultrahigh drive current and large selectivity in GeS selector”, Nature Communications, 11, 4636, 2020.
Xumeng Zhang, Ye Zhuo, Qing Luo, Zuheng Wu, Rivu Midya,Zhongrui Wang, Wenhao Song, Rui Wang, Navnidhi K. Upadhyay, Yilin Fang, Fatemeh Kiani, Mingyi Rao, Yang Yang, Qiangfei Xia, QiLiu*, Ming Liu*, and J. Joshua Yang*, “An artificial spiking afferent nerve based on Mottmemristors for neuronrobotics”, Nature Communications, 11, 51, 2020.
Luqi Tu#, Rongrong Cao#, Xudong Wang, Yan Chen, Shuaiqin Wu, Fang Wang, Zhen Wang, Hong Shen, TieLin, Peng Zhou, Xiangjian Meng, Weida Hu*, Qi Liu*, Jianlu Wang*, Ming Liu, and Junhao Chu，“Ultrasensitive negative capacitance phototransistors”, Nature Communications, 11, 101, 2020.
Guangjian Wu, Bobo Tian, Lan Liu, Wei Lv, Shuang Wu, Xudong Wang, Yan Chen, Jingyu Li, ZhenWang, Shuaiqin Wu, Hong Shen, Tie Lin, Peng Zhou*, Qi Liu, Chungang Duan, Shantao Zhang,Xiangjian Meng, Shiwei Wu, Weida Hu, Xinran Wang, Junhao Chu, and Jianlu Wang*,“Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains”, Nature Electronics, 3, 43-50, 2020.
Yi Ding, Lan Liu, Jiayi Li, Rongrong Cao, Yu-Gang Jiang, Chunsen Liu*, Qi Liu*, and PengZhou*“Asemi-floating memory with 535% enhancement of refresh time by local field modulation”,Advanced Functional Materials, 30, 1908089, 2020.
Chunsen Liu#, Huawei Chen#, Shuiyuan Wang#, Qi Liu#, Yu-Gang Jiang, David Wei Zhang, MingLiu, and Peng Zhou*,“Two-dimensional materials for next-generation computing technologies”, Nature Nanotechnology, 545-557, 2020. (Review)
Qing Luo, Yan Cheng, Jianguo Yang, Rongrong Cao, Haili Ma, Yang Yang, Rong Huang, Wei Wei,Yonghui Zheng, Tiancheng Gong, Jie Yu, Xiaoxin Xu, Peng Yuan, Xiaoyan Li, Lu Tai, Haoran Yu,Dashan Shang, Qi Liu, Bing Yu, Qiwei Ren, Hangbing Lv, and Ming Liu, “A highly CMOS compatiblehafnia-based ferroelectric diode”, Nature Communications, 11, 1391, 2020.
Xumeng Zhang#, Zuheng Wu#, Jikai Lu, Jinsong Wei, Jian Lu, Jiaxue Zhu, Jie Qiu, Rui Wang, Kaihua Lou, Yongzhou Wang, Tuo Shi, Chumeng Dou, Dashan Shang, Qi Liu*, and Ming Liu*, “Fully memristive SNNs with temporal coding for fast and low-power edge computing”, IEEE International Electron Devices Meeting (IEDM), 649-652, 2020.
Xiaobing Yan#*, Qianlong Zhao#, Andy Paul Chen, Jianhui Zhao, Zhenyu Zhou, Jingjuan Wang, HongWang, Lei Zhang, Xiaoyan Li, Zuoao Xiao, Kaiyang Wang, Cuiya Qin, Gong Wang, Yifei Pei, Hui Li,Deliang Ren, Jingsheng Chen, and Qi Liu*,“Vacancy-induced synaptic behaviorin 2DWS2 Nanosheet-Based Memristor for low-power neuromorphic computing”, Small, 15(24), 1901423, 2019.
Huawei Chen, Chunsen Liu, Zuheng Wu, Yongli He, Zhen Wang, Heng Zhang, Qing Wan, WeidaHu,David Wei Zhang, Ming Liu, Qi Liu*, and Peng Zhou*, “Time-tailoring van der Waalsheterostructures for human memory system programming”, Advanced Science, 6, 1901072, 2019.
Xumeng Zhang, Zhongrui Wang, Wenhao Song, Rivu Midya, Ye Zhuo, Rui Wang, Mingyi Rao,Navnidhi K. Upadhyay, Qiangfei Xia, J. Joshua Yang*, Qi Liu*, Ming Liu*, “Experimentaldemonstration of conversion-based SNNs with 1T1R Mott neurons for neuromorphic inference”,IEEE International Electron Devices Meeting (IEDM), 134-137, 2019.
Wei Wang, Rui Wang, Tuo Shi, Jinsong Wei, Rongrong Cao, Xiaolong Zhao, Zuheng Wu, XumengZhang, Jian Lu, Qingjiang Li*, Qi Liu*, and Ming Liu, “A self-rectification and quasi-linearanalogue memristor for artificial neural networks”, IEEE Electron Device Letters, 40, 14071410, 2019.
Rongrong cao, Bing Song, Dashan Shang, Yang Yang, Qing Luo, Shuyu Wu, Yue Li, Yan Wang*,Hangbing Lv, Qi Liu*, and Ming Liu, “Improvement of endurance in HZO-based ferroelectriccapacitor using Ru electrode”, IEEE Electron Device Letters, 40, 1744-1747, 2019.
Xiaobing Yan#*, Jianhui Zhao#, Sen Liu, Zhenyu Zhou, Qi Liu*, Jingshen Chen, and XiangyangLiu*, “Memristor with Ag-cluster-doped TiO2 films as artificial synapse for neuroinspiredcomputing”, Advanced Functional Materials, 28, 170532, 2018. (Inside Front Cover)
Xiaolong Zhao#, Jun Ma#, Xiangheng Xiao#, Qi Liu*, Lin Shao, Di Chen, Sen Liu, Jiebin Niu,Xumeng Zhang, Yan Wang, Rongrong Cao, Wei Wang, Zengfeng Di*, Hangbing Lv, Shibing Long andMing Liu*, “Breaking current-retention dilemma in cation-based resistive switching devicegraphene with controlled defects”, Advanced Materials, 30, 1705193, 2018. (Inside BackCover)
Xumeng Zhang#, Wei Wang#, Qi Liu*, Xiaolong Zhao, Rongrong Cao, Zhihong Yao, Xiaoli Zhu, FengZhang, Hangbing Lv, Shibing Long and Ming Liu, “An artificial neuron based on a thresholdswitching memristor”, IEEE Electron Device Letters, 39, 308-311, 2018.
Rongrong Cao, Yan Wang, Shengjie Zhao, Yang Yang, Xiaolong Zhao, Wei Wang, Xumeng Zhang,Hangbing Lv, Qi Liu*, and Ming Liu, “Effects of capping electrode on ferroelectric propertiesof Hf0.5Zr0.5O2 thin films”, IEEE Electron Device Letters, 39, 1207-1210, 2018.
Xiaolong Zhao#, Sen Liu#, Jiebin Niu#, Lei Liao, Qi Liu*, Xiangheng Xiao*, Hangbing Lv,Shibing Long, Writam Banerjee, Wenqing Li, Shuyao Si, and Ming Liu*, “Confining cationinjection to enhance CBRAM performance by nanopore graphene layer”, Small, 13, 1603948,2017. (Inside Front Cover)
Rongrong Cao#, Sen Liu#, Qi Liu*, Xiaolong Zhao, Wei Wang, Xumeng Zhang, Facai Wu, QuantanWu, Yan Wang, Hangbing Lv, Shibing Long, and Ming Liu, “Improvement of device reliability byintroducing a BEOL-compatible TiN barrier layer in CBRAM”, IEEE Electron Device Letters, 38,1371-1374, 2017.
Sen Liu#, Nianduan Lu#, Xiaolong Zhao#, Hui Xu, Writam Banerjee, Hangbing Lv, Shibing Long,Qingjiang Li, Qi Liu*, and Ming Liu*, “Eliminating negative-SET behavior by suppressingnanofilament overgrowth in cation-based memory”, Advanced Materials, 28, 10623-10629, 2016.(inside back cover)
Haitao Sun, Qi Liu*, Congfei Li, Shibing Long, Hangbing Lv, Chong Bi, Zongliang Huo, Ling Li,and Ming Liu*,“Direct observation of conversion between threshold switching and memoryswitching induced by conductive filament morphology”, Advanced Functional Materials, 24,5679-5689, 2014.
Qi Liu#, Jun Sun#, Hangbing Lv, Shibing Long, Kuibo Yin, Neng Wan, Litao Sun, and Ming Liu*,“Real-time observation on dynamic growth/dissolution of conductive filaments in oxideelectrolyte-based ReRAM,”Advanced Materials, 24, 1844-1849, 2012. (inside cover)
Qi Liu, Shibing Long, Hangbing Lv, Wei Wang, Jiebing Niu, Zongliang Huo, Junning Chen, andMing Liu*, “Controllable growth of nanoscale conductive filaments in solid-electrolyte-basedReRAM by using a metal nanocrystal covered bottom electrode”, ACS Nano, 4, 6162-6168, 2010.
京公网安备 11010802027423号