张文峰 - 华中科技大学 - 材料科学与工程学院

个人简介

1999-2003年：西南交通大学材料学院本科 2003-2006年：北京科技大学硕士 2006-2009年：香港城市大学博士 2009-2011年：香港城市大学高级研究助理 2011-2012年：日本东京大学JST-CREST博士后特任研究员 2012-2014年：日本东京大学日本学术振兴会(JSPS)博士后特别研究员 2014－至今：副教授，华中科技大学材料科学与工程学院

研究领域

“取代硅”半导体材料与器件（包括二维过渡金属硫化物、硅锗材料等）、电子封装、先进连接工艺

近期论文

查看导师新发文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

W.F. Zhang, J.X. Yu, and H.X. Chang. Two dimensional nanosheets as conductive, flexible elements in biomaterials. J. Mater. Chem. B, 3, 4959-4964 (2015) W.F. Zhang, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi. Conduction band offset at GeO2/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies. Appl. Phys. Lett. 102, 102106 (2013) W.F. Zhang, Z.B. He, G..D. Yuan, J.S. Jie, L.B. Luo, X.J. Zhang, Z.H. Chen, C.S. Lee, W.J. Zhang, S.T. Lee. High-Performance, Fully-Transparent and Flexible Zinc-Doped Indium Oxide Nanowire Transistors. Appl. Phys. Lett., 94, 123103 (2009) W.F. Zhang, J.S. Jie, L.B. Luo, G..D. Yuan, Z.B. He, Z.Q. Yao, Z.H. Chen, C.S. Lee, W.J. Zhang, S.T. Lee. Hysteresis in In2O3:Zn nanowire field-effect transistor and its application as a nonvolatile memory device. Appl. Phys. Lett., 93,183111 (2008) W.F. Zhang, J.S. Jie, Z.B. He, S.L. Tao, X. Fan, Y.C. Zhou, G..D. Yuan, L.B. Luo, C.S. Lee, W.J. Zhang, S.T. Lee. Single zinc-doped indium oxide nanowire as driving transistor for organic light-emitting diode. Appl. Phys. Lett., 92,153312 (2008) C.H. Lee, C. Lu, T. Tabata, W.F. Zhang, T. Nishimura, K. Nagashio, and A. Toriumi, “Oxygen Potential Engineering of Interfacial Layer for Deep Sub-nm EOT High-k Gate Stacks on Ge”, 2013 IEEE International Electron Device Meeting (IEDM2013), Dec. 9-11, 2013, Washington, DC) C.H. Lee, T. Nishimura, T. Tabata, C. Lu, W.F. Zhang, K. Nagashio, and A. Toriumi, “Reconsideration of Electron Mobility in Ge n-MOSFETs from Ge Substrate Side -Atomically flat surface formation, layer-by-layer oxidation, and dissolved oxygen extraction”, 2013 IEEE International Electron Device Meeting (IEDM2013), Dec. 9-11, 2013, Washington, DC) W.F. Zhang, T. Nishimura, K. Nagashio, and A. Toriumi, "Time-evolution of Roughening Process on Atomically Flat Ge (111) Surface by Diluted H2O2 Solution", 44rd IEEE Semiconductor Interface Specialists Conference (SISC2013), (Dec.5-7, 2013, Arlington) W.F. Zhang, C.H. Lee, C.M. Lu, T. Nishimura, K. Nagashio, K. Kita and A. Toriumi, "Effects of the Interface-related and Bulk-fixed Charges in Ge/GeO2 Stack on Band Bending of Ge Studied by X-ray Photoemission Spectroscopy", 2013 International Conference on Solid State Devices and Materials (SSDM), (Sep. 26, 2013, Fukuoka) W.F. Zhang, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi, "Band-offset Determination at Ge/GeO2 Interface by Internal Photoemission and Charge-corrected X-ray Photo-electron Spectroscopies", 2012 International Conference on Solid State Devices and Materials (SSDM), pp.731-732,(Sep. 25, 2012, Kyoto)