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H. Cheng#, B. Zhang#, S. Eimer#, Y. Liu#, Y. Xu*, P. Vallobra, Z. Wang, C. Li, J. Ge, R. Xu, Y. Yao, X. Wang, Y. Du, X. Zhang, Y. Zhang, C. Zhao, W. Zhao*, "An integrated ultra-high vacuum cluster for atomic-scale deposition, interface regulation, and characterization of spintronic multilayers", Review of Scientific Instruments, 2023, 94(7): 075103.
Z. Guo, G. Malinowski, P. Vallobra, Y. Peng, Y. Xu, S. Mangin, W. Zhao, M. Hehn, B. Zhang*, "Ultrafast antiferromagnet rearrangement in Co/IrMn/CoGd trilayers", Chinese Physics B, 2023, 32(8): 087507.
H. Cheng, B. Zhang*, Y. Xu*, S. Lu, Y. Yao, R. Xiao, K. Cao, Y. Liu, Z. Wang, R. Xu, D. Xiong, Y. Wang, H. Ma, S. Eimer, C. Zhao, W. Zhao*, "Mo-based Perpendicularly Magnetized Thin Films with Low-damping for Fast and Low-power Consumption Magnetic Memory", SCIENCE CHINA Physics, Mechanics & Astronomy, 2022, 65(8): 287511.
J. Wei#, B. Zhang#, M. Hehn, W. Zhang, G. Malinowski, Y. Xu, W. Zhao*, S. Mangin*, "All-optical Helicity-Independent Switching State Diagram in Gd-Fe-Co Alloys", Physical Review Applied, 2021, 15(5), 054065.
Y. Yao#, H. Cheng#, B. Zhang#, J. Yin, D. Zhu, W. Cai, S. Li, W. Zhao*, "Tunneling magnetoresistance materials and devices for neuromorphic computing", Materials Futures, 2023, 2: 032302.
B. Zhang, D. Zhu, Y. Xu, X. Lin, M. Hehn, G. Malinowski, W. Zhao*, S. Mangin*, "Optoelectronic domain-wall motion for logic computing", Applied Physics Letters, 2020, 116(25): 252403.
B. Zhang, Y. Xu, W. Zhao*, D. Zhu, X. Lin, M. Hehn, G. Malinowski, D. Ravelosona, S. Mangin, "Energy-Efficient Domain-Wall Motion Governed by the Interplay of Helicity-Dependent Optical Effect and Spin-Orbit Torque", Physical Review Applied, 2019, 11(3): 034001.
B. Zhang#, Y. Xu#, W. Zhao*, D. Zhu, H. Yang, X. Lin, M. Hehn, G. Malinowski, N. Vernier, D. Ravelosona, S. Mangin, "Domain-wall motion induced by spin transfer torque delivered by helicity-dependent femtosecond laser", Physical Review B, 2019, 99(14): 144402.
B. Zhang#, A. Cao#, J. Qiao, M. Tang, K. Cao, X. Zhao, S. Eimer, Z. Si, N. Lei, Z. Wang, X. Lin*, Z. Zhang, M. Wu, W. Zhao*, "Influence of heavy metal materials on magnetic properties of Pt/Co/heavy metal tri-layered structures", Applied Physics Letters, 2017, 110(1): 012405.
H. Yang#, B. Zhang#, X. Zhang, X. Yan, W. Cai, Y. Zhao, J. Sun, K. Wang, D. Zhu*, W. Zhao*, "Giant Charge-to-Spin Conversion Efficiency in SrTiO3-Based Electron Gas Interface", Physical Review Applied, 2019, 12(3): 034004.
X. Zhao, B. Zhang, N. Vernier, X. Zhang, M. Sall, T. Xing, L. Herrera-Diez, C. Hepburn, L. Wang, G. Durin, A. Casiraghi, M. Belmeguenai, Y. Roussigné, A. Stashkevich, S. Chérif, J. Langer, B. Ocker, S. Jaiswal, G. Jakob, M. Klaui, W. Zhao*, D. Ravelosona*, "Enhancing domain wall velocity through interface intermixing in W-CoFeB-MgO films with perpendicular anisotropy", Applied Physics Letters, 2019, 115(12): 122404.
W. Zhao*, X. Zhao, B. Zhang, K. Cao, L. Wang, W. Kang, Q. Shi, M. Wang, Y. Zhang, Y. Wang, S. Peng, J.-O. Klein, L. A. de Barros Naviner, D. Ravelosona, "Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy", Materials, 2016, 9(1): 41.
H. Cheng, J. Chen, S. Peng, B. Zhang, Z. Wang, D. Zhu, K. Shi, S. Eimer, X. Wang, Z. Guo, Y. Xu, D. Xiong, K. Cao, W. Zhao*, "Giant Perpendicular Magnetic Anisotropy in Mo‐Based Double‐Interface Free Layer Structure for Advanced Magnetic Tunnel Junctions", Advanced Electronic Materials, 2020, 6(8): 2000271.
S. Peng, D. Zhu, J. Zhou, B. Zhang, A. Cao, M. Wang, W. Cai, K. Cao, W. Zhao*, "Modulation of heavy metal/ferromagnetic metal interface for high-performance spintronic devices", Advanced Electronic Materials, 2019, 5(8): 1900134.
P. Liu, X. Lin, Y. Xu, B. Zhang, Z. Si, K. Cao, J. Wei, W. Zhao*, "Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application", Materials, 2018, 11(1): 47.
X. Fan, M. Hehn, G. Wei, G. Malinowski, T. Huang, Y. Xu, B. Zhang, W. Zhang, X. Lin*, W. Zhao*, S. Mangin*, "On/Off Ultra‐Short Spin Current for Single Pulse Magnetization Reversal in a Magnetic Memory Using VO2 Phase Transition", Advanced Electronic Materials, 2022, 8(10): 2200114.