卢海昌 - 北京航空航天大学 - 集成电路科学与工程学院

个人简介

卢海昌，北航集成电路科学与工程学院副教授，北航青年拔尖人才。 2014年本科毕业于北京大学信息科学技术学院电子系 2018年博士毕业于剑桥大学电子工程系，导师为英国著名皇家科学院与工程院两院院士John Robertson教授 2018年至2020年担任剑桥大学电子工程系博士后，同时担任任剑桥大学St. Edmund's college PDRA 致力于利用第一性原理模拟二维材料、磁性材料、自旋电子器件、相变材料等。以第一作者身份发表学术论文13篇。教育经历 2014.10 -- 2018.11 剑桥大学电子科学与技术博士研究生毕业哲学博士学位 2010.9 -- 2014.7 北京大学电子科学与技术大学本科毕业理学学士学位工作经历 2018.11 -- 2020.11 剑桥大学 Centre for Advanced Photonics and Electronics Research Associate 社会兼职 ACS Nano, Microelectronic Engineering审稿人《Frontiers in Electronics》 special guest editor

研究领域

自旋电子学太阳能电池相变材料光催化二维材料电子结构第一性原理计算

近期论文

查看导师新发文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

H Lu,Y Guo.Ab-initio study of Hexagonal Boron Nitride as the Tunnel Barrier.[期刊]:ACS Appl. Mater. Interfaces,2021 H Lu,Y Zhai,R Pan.An effective method of accelerating Bose gases using magnetic coils..[期刊]:Chinese Physics B,2014,23(9):093701 R Pan,X Yue,X Xu,H Lu.Multiple photon-echo rephasing of coherent matter waves..[期刊]:Phys. Lett. A,2015,379(7):691 Band edge States, Intrinsic Defects and Dopants in Monolayer HfS2 and SnS2..[期刊]:Appl. Phys. Lett.,2018,112(6):062105 Chemical trends of Schottky barrier behavior on monolayer hexagonal B, Al, and Ga nitrides..[期刊]:J. Appl. Phys.,2016,120(6):065302 Charge transfer doping of graphene without degrading carrier mobility..[期刊]:J. Appl. Phys.,2017,121(22):224304 Dirac-Point Shift by Carrier Injection Barrier in Graphene Field-Effect Transistor Operation at Room Temperature.:ACS Appl. Mater. Interfaces,2018,10(13):10618 nsertion of an ultrathin Al2O3 interfacial layer for Schottky barrier height reduction in WS2 field-effect transistors..[期刊]:Nanoscale,2019,11(11):4811 Modelling of Gap State Passivation and Fermi Level De-pinning in Solar Cells..[期刊]:Appl. Phys. Lett.,2019,114(2):222106 Density Functional Theory Studies of the Metal-Insulator Transition in Vanadium Dioxide Alloys..[期刊]:Phys. Status Solidi B,2019,256(12):1900210 Hybrid bands offset calculation for heterojunction interfaces between disparate semiconductors..[期刊]:Appl. Phys. Lett.,2020,116:131602 Modelling the Enthalpy change and Transition Temperature dependence the Metal-Insulator Transition in Pure and Doped Vanadium Dioxide..[期刊]:Phys. Chem. Chem. Phys.,2020,22:13474 Microstructure scaling of metal-insulator transition properties of VO2 Films..[期刊]:Appl. Phys. Lett.,2021,118:121901 Microstructure Scaling in Metal-Insulator-Transition of Atomic Layer Deposited VO2 Films..[期刊]:Solid-State Electronics,2021(183):108046 Comparison of Hexagonal Boron Nitride and MgO Tunnel Barriers in Fe, Co Magnetic Tunnel Junctions..[期刊]:Appl. Phys. Rev.,2021,8:031307 The metal-insulator phase change in vanadium dioxide and its applications..[期刊]:J. Appl. Phys.,2021,129:240902 Passivating the sulfur vacancy in monolayer MoS2.[期刊].AIP:APL Materials,2018,6(6) Atomic structure and Electronic structure of disordered Graphitic Carbon Nitride.[期刊].Elsevier:Carbon,2019,174:483-489 Haichang Lu,Yuzheng Guo.Electronic Structures of metallic and insulating phases of Vanadium Oxide and its Oxide Alloying.[期刊].APS:Phys. Rev. Mater.,2019,3(9)