王尘 - 厦门理工学院 - 光电与通信工程学院

个人简介

王尘，男，副教授，工学博士，硕士生导师，毕业于厦门大学微电子学与固体电子学专业，福建省高层次人才（C类），厦门市高层次人才（C类），厦门理工学院“鹭江学者”。作为项目负责人主持国家自然科学基金青年项目1项，福建省自然科学基金项目1项，其它纵向项目2项，企业横向课题1项，参于各类科研项目多项，发表SCI论文30余篇。

研究领域

半导体光电子材料与器件，包括氧化镓等宽禁带半导体薄膜与器件、硅基光电子材料与器件、激光与物质相互作用等。

近期论文

查看导师新发文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

[1] C. Wang, Y.-C. Zhang, W.-H. Fan, W.-Y. Wu, D.-S. Wuu, S.-Y. Lien, W.-Z. Zhu, Texture evolution mechanism of pulsed laser deposited in-doped Ga2O3 film affected by laser fluence and its application in solar-blind photodetector, Vacuum, (2022) 111469. [2] C. Wang, S.-W. Li, Y.-C. Zhang, W.-H. Fan, H.-J. Lin, D.-S. Wuu, S.-Y. Lien, W.-Z. Zhu, Oxygen annealing induced crystallization and cracking of pulsed laser deposited Ga2O3 films, Vacuum, (2022) 111176. [3] C. Wang, C.-H. Bao, W.-Y. Wu, C.-H. Hsu, M.-J. Zhao, X.-Y. Zhang, S.-Y. Lien, W.-Z. Zhu, Substrate temperature-controlled precursor reaction mechanism of PEALD-deposited MoOx thin films, Journal of Materials Science, (2022) 1-15. [4] C. Wang, S.W. Li, W.H. Fan, Y.C. Zhang, H.J. Lin, X.Y. Zhang, S.Y. Lien, W.Z. Zhu, D.S. Wuu, Annealing temperature controlled crystallization mechanism and properties of gallium oxide film in forming gas atmosphere, Journal of the American Ceramic Society (2022)1–13. [5] C. Wang, S.-W. Li, W.-H. Fan, Y.-C. Zhang, X.-Y. Zhang, R.-R. Guo, H.-J. Lin, S.-Y. Lien, W.-Z. Zhu, Structural, optical and morphological evolution of Ga2O3/Al2O3 (0001) films grown at various temperatures by pulsed laser deposition, Ceramics International, 47 (2021) 29748-29757. [6] C. Wang, C.-H. Bao, W.-Y. Wu, C.-H. Hsu, M.-J. Zhao, S.-Y. Lien, W.-Z. Zhu, Influence of plasma power on deposition mechanism and structural properties of MoO x thin films by plasma enhanced atomic layer deposition, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 39 (2021) 032415. [7] Chen Wang ; Yi-Hong Xu, Song-Yan Chen, Cheng Li, Jian-Yuan Wang, Wei Huang, Hong-Kai Lai, and Rong-Rong Guo, Improved performance of Au nanocrystal nonvolatile memory by N2-plasma treatment on HfO2 blocking layer, Chinese Physics B, 2018, 27(6): 067303 [8] Chen Wang; Yihong Xu; Cheng Li; Haijun Lin, Improved performance of Ge n+/p diode by combining laser annealing and epitaxial Si passivation, Chinese Physics B, 2018, 27(1): 0185021~0185024 [9] Chen Wang, Cheng Li, Jiangbin Wei, Guangyang Lin, Xiaoling Lan, Xiaowei Chi, Chao Lu, Zhiwei Huang, Wei Huang, Hongkai Lai, and Songyan Chen, High performance Ge p-n photodiode achieved with pre-annealing and excimer laser annealing, IEEE Photonics Technology Letters, 2015, 27(14):1485-1488. [10] Chen Wang, Cheng Li, Guangyang Lin, Weifang Lu, Jiangbin Wei, Wei Huang, Hongkai Lai, Songyan Chen, Zengfeng Di, and Miao Zhang, Germanium n+/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing, IEEE Transactions on Electron Devices, 2014, 61(9): 3060-3064. [11] Chen Wang, Cheng Li, Shihao Huang, Weifang Lu, Guangming Yan, Maotian Zhang, Huanda Wu, Guangyang Lin, Jiangbin Wei, and Wei Huang, Phosphorus diffusion in germanium following implantation and excimer laser annealing, Applied surface science, 2014, 300: 208-212. [12] Chen Wang, Cheng Li, Shihao Huang, Weifang Lu, Guangming Yan, Guangyang Lin, Jiangbin Wei, Wei Huang, Hongkai Lai, and Songyan Chen. Low specific contact resistivity to n-Ge and well-behaved Ge n+/p diode achieved by implantation and excimer laser annealing. Applied Physics Express. 2013, 6(10): 106501.