近期论文
查看导师新发文章
（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）
国际期刊论文选
H. Li, Z. Gao, S. Ji, Y. Ma, F. Wang, “An inrush current limiting method for grid-connected converters considering grid voltage disturbances,” IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 10, no. 2, pp. 2608-2618, Apr. 2022.
X. Huang, S. Ji, C. Nie, D. Li, M. Lin, L. Tolbert, F. Wang, W. Giewont, “Comprehensive analysis and improvement methods of noise immunity of desat protection for high voltage SiC MOSFETs with high dv/dt,” IEEE Open Journal of Power Electronics, vol. 3, pp. 36-50, Dec. 2021.
B. Shi, S. Ji, Z. Zhao, Z. Yu, “Discrete-State Event-Driven Numerical Prototyping of Megawatt Solid-State Transformers and AC/DC Hybrid Microgrids,” IEEE Access, vol. 9, pp. 108329-108339, Jul. 2021.
S. Ji, X. Huang, J. Palmer, F. Wang, L. Tolbert, “Modular multilevel converter (MMC) modeling considering submodule voltage sensor noise,” IEEE Trans. Power Electron., vol. 36, no. 2, pp. 1215-1219, Feb. 2021.
S. Ji, L. Zhang, X. Huang, J. Palmer, F. Wang, L. Tolbert, “A novel voltage balancing control with dv/dt reduction for 10-kV SiC MOSFET-based medium voltage modular multilevel converter,” IEEE Trans. Power Electron., vol. 35, no. 11, pp. 12533-12543, Nov. 2020.
L. Zhang, S. Ji, S. Gu, X. Huang, J. Palmer, W. Giewont, F. Wang, L. Tolbert, “Design considerations for high-voltage-insulated gate drive power supply for 10-kV SiC MOSFET applied in medium-voltage converter,” IEEE Trans. Ind. Electron., vol. 68, no. 7, pp. 5712-5724, Jul. 2021.
P. Yao, X. Jiang, P. Xue, S. Ji, F. Wang, “Flux balancing control of ungapped nanocrystalline core-based transformer in dual active bridge converters,” IEEE Trans. Power Electron., vol. 35, no. 11, pp. 11463-11474, Nov. 2020.
S. Ji, F. Wang, L. Tolbert, T. Lu, Z. Zhao, H. Yu, “An FPGA based voltage balancing control for multi HV-IGBTs in series connection,” IEEE Trans. on Ind. Appl., vol. 54, no. 5, pp. 4640-4649, Sep. 2018.
S. Ji, M. Laitinen, X. Huang, J. Sun, W. Giewont, F. Wang, L. Tolbert, “Short circuit characterization and protection of 10 kV SiC MOSFET,” IEEE Trans. Power Electron., vol. 34, no. 2, pp. 1755-1764, Feb. 2019.
B. Shi, Z. Zhao, K. Li, G. Feng, S. Ji, J. Zhou, “Design methodology for optimal phase-shift modulation of non-inverting buck-boost converter,” Journal of Power Electronics., vol. 19, no. 5, pp. 1108-1121, Sep. 2019.
S. Ji, S. Zheng, F. Wang, L. M. Tolbert, “Temperature-dependent characterization, modeling and switching speed limitation analysis of third generation 10 kV SiC MOSFET,” IEEE Trans. Power Electron., vol. 33, no. 5, pp. 4317-4327, May. 2018.
S. Ji, T. Lu, Z. Zhao, H. Yu, L. Yuan, “Series-connected HV-IGBTs using active voltage balancing control with status feedback circuit,” IEEE Trans. Power Electron., vol. 30, no. 8, pp. 4165-4174, Aug. 2015.
S. Ji, T. Lu, Z. Zhao, H. Yu, L. Yuan, S. Yang, C. Secrest, “Physical model analysis during transient for series connected HVIGBTs,” IEEE Trans. Power Electron., vol. 29, no. 11, pp. 5727-5737, Nov. 2014.
T. Lu, Z. Zhao, H. Yu, S. Ji, L. Yuan, F. He. “Parameter design of three-level converter based on series connected HV-IGBTs,” IEEE Trans. on Ind. Appl., vol. 50, no. 6, pp. 3943-3954, Nov. 2014.
T. Lu, Z. Zhao, S. Ji, H. Yu, L. Yuan. “Active clamping circuit with status feedback for series-connected HV-IGBTs,” IEEE Trans. on Ind. Appl., vol. 50, no. 5, pp. 3579-3590, Sep. 2014.
S. Ji, Z. Zhao, T. Lu, L. Yuan, H. Yu. “HVIGBT physical model analysis during transient,” IEEE Trans. Power Electron., vol. 28, no. 5, pp. 2616-2624, May. 2013.
国际会议论文选
D. Li, X. Huang, S. Ji, C. Nie, F. Wang, L. Tolbert, “Controller design and implementation of a medium voltage (13.8 kV) modular multi-level converter for asynchronous microgrids,” IEEE Energy Conversion Congress and Exposition (ECCE), 2020, Detroit, MI.
X. Huang, S. Ji, D. LI, C. Nie, L. Tolbert, F. Wang, W. Giewont, “Analysis and gate driver design considerations of 10 kV SiC MOSFETs under flashover fault due to insulation failure,” IEEE Energy Conversion Congress and Exposition (ECCE), 2020, Detroit, MI.
X. Huang, S. Ji, D. Li, C. Nie, W. Giewont, L. Tolbert, F. Wang, “A test scheme for the comprehensive qualification of MMC submodule based on 10 kV SiC MOSFETs under high dv/dt,” European Conference on Power Electronics and Applications (EPE), 2020, Lyon, France.
S. Ji, J. Palmer, X. Huang, D. Li, W. Giewont, L. Tolbert, F. Wang, “Impact of submodule voltage sensor noise in 10 kV SiC MOSFET modular multilevel converters (MMCs) under high dv/dt environment,” IEEE Applied Power Electronics Conference and Exposition (APEC), 2020, New Orleans, LA, pp. 1089-1093.
D. Li, S. Ji, X. Huang, J. Palmer, F. Wang, L. Tolbert, “Controller development of an asynchronous microgrid power conditioning system (PCS) converter considering grid requirements,” IEEE Applied Power Electronics Conference and Exposition (APEC), 2020, New Orleans, LA, pp. 616-621.
J. Palmer, S. Ji, X. Huang, L. Zhang, W. Giewont, F. Wang, L. Tolbert, “Improving voltage sensor noise immunity in a high voltage and high dv/dt environment,” IEEE Applied Power Electronics Conference and Exposition (APEC), 2020, New Orleans, LA, pp. 107-113.
X. Huang, S. Ji, J. Palmer, L. Zhang, D. Li, F. Wang, L. Tolbert, W. Giewont, “A robust 10 kV SiC MOSFET gate driver with fast overcurrent protection demonstrated in a MMC submodule,” IEEE Applied Power Electronics Conference and Exposition (APEC), 2020, New Orleans, LA, pp. 1813-1820.
S. Ji, X. Huang, J. Palmer, L. Zhang, W. Giewont, F. Wang, L. Tolbert, “Medium Voltage (13.8 kV) Transformer-less Grid-Connected DC/AC Converter Design and Demonstration Using 10 kV SiC MOSFET with High Frequency,” IEEE Energy Conversion Congress and Exposition (ECCE), 2019, Baltimore, MD, pp. 1953-1959.
J. Palmer, S. Ji, X. Huang, L. Zhang, F. Wang, W. Giewont, L. Tolbert, “Testing and validation of 10 kV SiC MOSFET based 35 kVA MMC phase-leg for medium voltage (13.8 kV) grid,” IEEE Energy Conversion Congress and Exposition (ECCE), 2019, Baltimore, MD, pp. 2001-2006.
X. Huang, J. Palmer, S. Ji, L. Zhang, F. Wang, L. Tolbert, W. Giewont, “Design and testing of a modular multilevel converter submodule based on 10 kV SiC MOSFETs,” IEEE Energy Conversion Congress and Exposition (ECCE), 2019, Baltimore, MD, pp. 1926-1933.
L. Zhang, S. Ji, X. Huang, J. Palmer, W. Giewont, F. Wang, L. Tolbert, “Multiple-step commutation scheme for avoiding high dv/dt in modular multilevel converter with 10 kV SiC MOSFET,” IEEE Energy Conversion Congress and Exposition (ECCE), 2019, Baltimore, MD, pp. 1968-1973.
L. Zhang, S. Ji, S. Gu, X. Huang, J. Palmer, W. Giewont, F. Wang, L. Tolbert, “Design considerations of high-voltage-insulation gate driver power supply for 10 kV SiC MOSFET in medium-voltage application,” in IEEE Applied Power Electronics Conference and Exposition (APEC), 2019, Anaheim, CA, pp. 425-430.
X. Huang, S. Ji, J. Palmer, L. Zhang, L. Tolbert, F. Wang, “Parasitic capacitor’s impact on switching performance in a 10 kV SiC MOSFET based converter,” IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2018, Atlanta, GA, pp. 311-318.
X. Huang, S. Ji, J. Sun, S. Zheng, F. Wang, L. Tolbert, M. Laitinen, W. Giewont, “Impact of Body Diode and Anti-parallel J B S Diode on Switching Performance of 3rd Generation 10 kV SiC MOSFET,” IEEE Energy Conversion Congress and Exposition (ECCE), 2018, Portland, OR, pp. 1887-1894.
S. Ji, M. Laitinen, X. Huang, J. Sun, W. Giewont, L. Tolbert, F. Wang, “Short circuit characterization of 3rd generation 10 kV SiC MOSFET,” in IEEE Applied Power Electronics Conference and Exposition (APEC), San Antonio, TX, 2018.
S. Ji, X. Shi, Z. Zhang, W. Cao, F. Wang, “Benefits of high voltage SiC applications in medium voltage power distribution grids,” in International Conference on Silicon Carbide and Related Materials (ICSCRM), Washington, D.C., 2017.
京公网安备 11010802027423号