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个人简介

1990.09-1994.07:湖北大学物理系,物理教育专业教育学学士学位 1995.09-1998.07:湖北大学压电陶瓷技术研究所,无机非金属材料专业工学硕士学位 1998.07-2001.08:湖北大学物理学与电子技术学院,助教 2001.09-2004.07:中国科学院物理研究所,,凝聚态物理专业理学博士学位 2003.09-2003.12:澳大利亚Wollongong大学工程物理系,交换学生 2004.09-2005.04:日本神户大学工学部电子电气工程系,非常勤研究员 2005.04-2006.07:武汉大学物理科学与技术学院,博士后 2006.8至今 湖北大学材料科学与工程学院,教授

研究领域

1、半导体光电材料与器件 2、铁电压电材料与器件

近期论文

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Xunzhong Shang,Lei Zhang, Jingang Fang, Mingkai Li, and Yunbin He,Annealing and characterization of CuInS2thin films prepared on sapphire substrates by pulsed laser deposition, Materials Research Innovations,2014 ,18(S4):22~25 Xunzhong Shang,Jinming Guo, Wanping Xiao, Yinmei Lu, Gang Chang, Taosheng Zhou, Yunbin He, The Effects of Ta Substitution and K/Na Ratio Variation on the Microstructure and Properties of (K,Na)NbO3-Based Lead Free Piezoelectric Ceramics,Journal of Electronic Materials,2014,43:1424~1431. Xunzhong Shang,Zhiqiang Wang, Mingkai Li, Lei Zhang, Jingang Fang, Jiali Tai, Yunbin He, A numerical simulation study of CuInS2 solar cells, Thin solid films, 2014,550 :649~653. Xunzhong Shang,Heng Liu, Jinming Guo, Dan Jiang, Taosheng Zhou, Yunbin He, Enhancing the properties of high-temperature BiScO3-PbTiO3 piezoceramics via Bi addition, Mater. Res. Bull., 2013,48 :3072~3076. Xunzhong Shang,Jingang Fang, Lei Zhang, Mingkai Li, Gang Chang, Pai Li, Yunbin He, Pulsed laser deposition and characterization of epitaxial CuInS2 thin films on c-plane sapphire substrates, J. Alloy. Compd., 2013,553 :282~285 X.Z.Shang, Jing wu , W.X.Wang, Q.Huang, J.M.Zhou,Room temperature photoluminescence evaluation of In0.29Al0.71As/In0.3Ga0.7As/GaAs metamorphic high electron mobility transistor structures, Solid State Electronics,51,63-67(2007) X. Z. Shang,S. D. Wu, W. X. Wang, L.W. Guo,Q. Huang and J. M. Zhou, Low temperature step-graded InAlAs/GaAs metamorphic buffer grown by molecular beam epitaxy,Journal of Physics D: Applied Physics,39,1800-1804(2006) X.Z.Shang,P.J.Niu, B.N.Mao,W.X.Wang, L.W.Guo, Q.Huang, J.M.Zhou, InGaP/GaAs Heterojunction Bipolar Transistor Grown by Solid-source Molecular Beam Epitaxy with a GaP decomposition Source, Solid State communication,138,114-117(2006) X.Z.Shang, P.J.Niu, W.L.Guo, W.X.Wang, Q.Huang, J.M.Zhou, Photoluminescence investigation of Be-doped NpnAlGaAs/GaAs heterojunction bipolar transistor structures, Physica E :Low-dimensional Systems and Nanostructures.30, 36(2005) X.Z.Shang,W.C.Wang, S.D.Wu, Z.G.Xing, L.W.Guo, Q.Huang and J.M.Zhou, Effects of Indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs 2D electron gas, Semiconductor Science and Technology 19,519(2004) X.Z. Shang,L.W.Guo, S.D.Wu, P.J.Niu, Q.Huang and J.M.Zhou, Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source, Journal of Crystal Growth.262,14(2004) X.Z.Shang,P.J.Niu, S.D.Wu, W.X.Wang, L.W.Guo, Q.Huang, J.M.Zhou, Properties of InGaP/GaAs grown by solid-source molecular beam epitaxy with a GaP decomposition source,Chinese Physics Letters.20 (9), 1616(2003) 尚勋忠,方金钢,王志强,黎明锴,周桃生,何云斌.黄铜矿结构CuInS2 陶瓷和薄膜的制备及性能研究,湖北大学报(自然科学版),2013,35(1):89~92 尚勋忠,刘越彦,孙锐,郭金明,周桃生,常钢,何云斌. 抗还原型PZT 压电陶瓷的制备与性能,硅酸盐学报,2013,41(3):288~291 尚勋忠,陈威,曹万强.弛豫铁电体介电可调性的研究,物理学报,2012,61(21):217701 尚勋忠,松下和征,井上知也,喜多隆,和田修,保田英洋,森博太郎. 自组织InAs/GaAs量子点的表面氮化研究.固体电子学研究与进展,2007,27(2):151~153 尚勋忠,张源伟,周桃生,何云斌,柴荔英,邝安祥,一种压电陶瓷降压变压器材料的研究,硅酸盐学报,2000,28(2):176~180 尚勋忠,王文冲,郭丽伟,吴曙东,黄绮,周均铭,掺In对反型AlGaAs/GaAs异质界面质量的改善及应用,半导体学报,2004,25,1128~1131

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