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2004.10 – 至今 河北工业大学材料物理与化学国家重点学科
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[1] Guifeng Chen, Yangxian Li, Caichi Liu, Neutron irradiation defects in Czochralski silicon, Phys. Status Solidi C 6, 2009
[2] Chen Guifen, Yan WenBo, Chen Hongjian, The effects of fast neutron irradiation on oxygen in Czochralski-silicon, Chinese Physics B, 2009
[3] Guifeng Chen, Wenbo Yan, Hongjian Chen, Infrared studies of oxygen-related complexes in electron-irradiated Cz-Si, Chinese Physics B, 2009
[4] Chen Guifeng, Li Yangxian, Liu Lili, Annealing behaviors of vacancy in varied neutron irradiated Czochralski silicon, Transactions of Nonferrous Metals Society of China, 2006
[5] Chen Guifeng, Li Yanxian, Li Xinghua, Influence of rapid thermal process on intrinsic gettering in fast neutron irradiated Czochralski silicon, Transactions of Nonferrous Metals Society of China, 2006
[6] Chen Gui-Feng, Tan Xiao-Dong, Wan Wei-Tian, The Growth and device Characteristics of Nano-folding InGaN/GaN MQWs LED, Chinese Physics, 2010
[7] Chen Guifeng, Li Yangxian, Yangshuai, The influence of the annealing behaviors on VO in varied neutron irradiated Czochralski silicon, Semiconductor technology(ISTC 2005), 2005, p289-293
[8] Chen Gui-feng, MA Xiao-wei, WU Jian-hai, Effect of rapid thermal annealing on oxygen precipitates behavior in Czochralski silicon irradiated by high energy particles, Journal of Zhejiang University(Engineering Science), 2010
[9] Chen Guifeng, Liu Lili, Li Yangxian, Study on the oxygen precipitation in fast neutron irradiated nitrogen-doped Czochralski silicon by FTIR, Spectroscopy and Spectral Analysis, 2006, 26(7): 41-42
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