研究领域
半导体晶体生长与缺陷工程、半导体光电子材料及应用、太阳电池材料及应用
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1.Effects of thermal annealing on the electrical properties of large diameter semi-insulating gallium arsenide，Journal of Alloys and Compounds, 475 (2009) 923–925
2．No mask epitaxial lateral overgrowth of gallium nitride on sapphire，Journal of Alloys and Compounds, 456 (2008) 368-371
3．Effect of annealing atmospheres on the void defects in largediameter CZSi single crystals,Materials Science in Semiconductor Processing,9（2006）117-120
4．Vanadium defects formation mechanism in undoped GaN grown on silicon, J. Rare Earths, 24(3)(2006)41-44
5．Microstructure of flow pattern defects in boron-doped Czochralski-grown silicon，Rare Metals，25（4）（2006）389-392
6． Investigation of flow pattern defects in as-grown and rapid thermal annealed CZSi wafers，J. Crystal Growth, 262(2004)1-6
7． Evolution of flow pattern defects in boron-doped <100> Czochralski silicon crystals during secco etching procedure，J. Crystal Growth, 269(2004)310
8． Investigation of oxygen precipitation and intrinsic gettering in heavily Sb-doped silicon, Microelectronic Engineering, 66(2003)340
9. Multivacancy clusters in neutron irradiated silicon, J. Appl. Phys.， 78(1995)6458
10. Fast neutron irradiation for Czochralski silicon，Appl. Phys. Lett., 65(22)(1994)2807-8
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