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Zhu D, Wallis DJ and Humphreys CJ, “Prospects of III-nitride optoelectronics grown on Si”, Reports on Progress in Physics, 76 (2013) 106501. Davies MJ, Badcock TJ, Dawson P, Kappers MJ, Oliver RA and Humphreys CJ, “High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop”, Appl. Phys. Lett., 102 (2013) 022106. Radtke G, Couillard M, Botton GA, Zhu D and Humphreys CJ, “Structure and chemistry of the Si(111)/AlN interface”, Appl. Phys. Lett., 100 (2012) 011910. Hammersley S, Watson-Parris D, Dawson P, Godfrey MJ, Badcock TJ, Kappers MJ, McAleese C, Oliver RA and Humphreys CJ, “The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures”, J. Appl. Phys., 111 (2012) 083512.