个人简介
男，博士，副教授，博士生导师，辽宁省优秀硕士学位论文指导教师，沈阳工业大学科技先进工作者、学术带头人、翔源学者。
获大连理工大学理学学士学位，获韩国庆北国立大学工学博士学位。主要研究方向包括：集成芯片、神经形态类脑芯片与智能传感、先进固态电子材料与器件。国际上首次提出了“基于深肖特基势垒的高性能隧道场效应晶体管”、“双向隧道场效应晶体管”和“导电类型可调节式隧道场效应晶体管”的概念和工作原理，建立并完善了适用于亚10nm工艺的多栅场效应晶体管科学理论体系。主要学术成果形式包括：发表SCI检索期刊论文30余篇，SCI他引次数过百；著有《纳米级场效应晶体管建模与结构优化研究》一书；授权职务发明专利40余项。其中被评为辽宁省自然科学学术成果一等、沈阳市十大优秀自然科学学术成果的科研成果各一项、被评为沈阳市自然科学学术成果一等的学术成果两项。承担的主要科研项目包括：教育部项目1项、省科技厅项目4项、省教育厅项目4项。
研究领域
集成芯片、神经形态类脑芯片与智能传感、先进固态电子材料与器件。
近期论文
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A High-Performance Rectangular Gate U Channel FETs with Only 2-nm Distance between Source and Drain Contacts NANOSCALE RESEARCH LETTERS卷: 14文献号: 43出版年: FEB 4 2019
An FET-Type Gas Sensor for CO2 Detection at Room Temperature using PEI-Coated SWNT JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE卷: 19期: 2页: 196-202出版年: APR 2019
Deep Sub-60 mV/decade Subthreshold Swing in AlGaN/GaN FinMISHFETs with M-Plane Sidewall Channel IEEE TRANSACTIONS ON ELECTRON DEVICES卷: 66期: 4页: 1699-1703出版年: APR 2019
A novel low leakage saddle junctionless FET with assistant gate INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS卷: 32期: 1文献号: e2465出版年: JAN-FEB 2019
A source drain symmetric and interchangeable bidirectional tunneling field effect transistor AIP ADVANCES卷: 8期: 8文献号: 085318出版年: AUG 2018
An FET-type gas sensor with a sodium ion conducting solid electrolyte for CO2 detection SENSORS AND ACTUATORS B-CHEMICAL卷: 259页: 1058-1065出版年: APR 15 2018
Pulse Biasing Scheme for the Fast Recovery of FET-Type Gas Sensors for Reducing Gases IEEE ELECTRON DEVICE LETTERS卷: 38期: 7页: 971-974出版年: JUL 2017
A novel high-performance H-gate U-channel junctionless FET JOURNAL OF COMPUTATIONAL ELECTRONICS卷: 16期: 2页: 287-295出版年: JUN 2017
Effect of a pre-bias on the adsorption and desorption of oxidizing gases in FET-type sensor作者: Wu, Meile; Kim, Chang-Hee; Shin, Jongmin;等. SENSORS AND ACTUATORS B-CHEMICAL卷: 245页: 122-128出版年: JUN 2017
Optimization of saddle junctionless FETs for extreme high integration JOURNAL OF COMPUTATIONAL ELECTRONICS卷: 15期: 3页: 801-808出版年: SEP 2016
A novel high performance junctionless FETs with saddle-gate JOURNAL OF COMPUTATIONAL ELECTRONICS卷: 14期: 3页: 661-668出版年: SEP 2015
Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B卷: 33期: 1文献号: 011202出版年: JAN 2015
Subthreshold current modeling for fully depleted short channel double-gate MOSFETs with consideration of structure asymmetry INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS卷: 27期: 5-6特刊: SI页: 875-882出版年: SEP-DEC 2014
Simulation study on deep nanoscale short channel junctionless SOI FinFETs with triple-gate or double-gate structures JOURNAL OF COMPUTATIONAL ELECTRONICS卷: 13期: 2页: 509-514出版年: JUN 2014
A compact model of subthreshold characteristics for short channel double-gate junctionless field effect transistors EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS卷: 65期: 3文献号: 30101出版年: MAR 2014
Modeling of subthreshold characteristics of short channel junctionless cylindrical surrounding-gate nanowire metal-oxide-silicon field effect transistors PHYSICA SCRIPTA卷: 89期: 1文献号: 015804出版年: JAN 2014
The optimal design of 15 nm gate-length junctionless SOI FinFETs for reducing leakage current SEMICONDUCTOR SCIENCE AND TECHNOLOGY卷: 28期: 10文献号: 105013出版年: OCT 2013
The Optimal Design of Junctionless Transistors with Double-Gate Structure for reducing the Effect of Band-to-Band Tunneling JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE卷: 13期: 3页: 245-251出版年: JUN 2013
A subthreshold current model for nanoscale short channel junctionless MOSFETs applicable to symmetric and asymmetric double-gate structure SOLID-STATE ELECTRONICS卷: 82页: 77-81出版年: APR 2013
A Continuous Current Model of Accumulation Mode (Junctionless) Cylindrical Surrounding-Gate Nanowire MOSFETs CHINESE PHYSICS LETTERS卷: 30期: 3文献号: 0256-307X(2013)出版年: MAR 2013
A unified analytical continuous current model applicable to accumulation mode (junctionless) and inversion mode MOSFETs with symmetric and asymmetric double-gate structures SOLID-STATE ELECTRONICS卷: 79页: 206-209出版年: JAN 2013
A continuous current model of ultra-thin cylindrical surrounding-gate inversion-mode Si nanowire nMOSFETs considering a wide range of body doping concentration SEMICONDUCTOR SCIENCE AND TECHNOLOGY卷: 28期: 1文献号: 015002出版年: JAN 2013
Modelling of the nanoscale channel length effect on the subthreshold characteristics of junctionless field-effect transistors with a symmetric double-gate structure JOURNAL OF PHYSICS D-APPLIED PHYSICS卷: 45期: 37文献号: 375102出版年: SEP 19 2012
A continuous current model of fully-depleted symmetric double-gate MOSFETs considering a wide range of body doping concentrations .SEMICONDUCTOR SCIENCE AND TECHNOLOGY卷: 25期: 5文献号: 055018出版年: MAY 2010
A full analytical model of fringing-field-induced parasitic capacitance for nano-scaled MOSFETs SEMICONDUCTOR SCIENCE AND TECHNOLOGY卷: 25期: 1文献号: 015008出版年: JAN 10 2010
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