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个人简介

教育背景 1990.9-1994.7 湖南师范大学物理系获理学学士,物理专业; 1994.9-1997.2 华南理工大学应用物理系获理学硕士学位,凝聚态物理专业; 1998.9-2001.7 中国科学院半导体研究所获理学博士学位,凝聚态物理专业; 工作经历 2001.9-2004.9 美国伯克利劳伦斯国家实验室博士后。 2004.9-2007.7 美国再生能源国家实验室助理研究员。 2007.7 中国科学院半导体研究所研究员、博士生导师。 2015.12至今 广东工业大学先进装备与光电技术研究所所长

近期论文

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1)S. Yang, C. Wang, H. Sahin, H. Chen, Y. Li, S. Li, A. Suslu, F. Peeters, Q. Liu*, Jingbo Li*, S. Tongay*, “Tuning the Optical, Magnetic, and Electrical Properties of ReSe2 by Nanoscale Strain Engineering”, Nano Letters, 15,1660 (2015). 2)B. Li, L. Huang, M. Zhong, N. J. Huo, Y. T. Li, S. Yang, C. Fan, J. Yang, W. P. Hu, Z. M. Wei* and Jingbo Li*, “Synthesis and Transport Properties of Large-Scale Alloy Co0.16Mo0.84S2 Bilayer Nanosheets”, ACS Nano, 9,1257 (2015). 3)N. J. Huo, J. H. Yang, L. Huang, Z. M. Wei, S.-S. Li, S.-H. Wei,* and Jingbo Li.*, “Tunable Polarity Behavior and Self-Driven Photoswitching in p-WSe2/n-WS2 Heterojunctions”, Small, (2015), online, DOI: 10.1002/smll.201501206. 4)J. H. Yang, N. J. Huo, Y. Li, X.-W. Jiang, T. Li, R. X. Li, F. Y. Lu, C. Fan, B. Li, Kasper Nørgaard, B. W. Laursen, Z. M. Wei,* Jingbo Li,* and S.-S. Li, “Gate-Tunable Ultra-High Photoresponsivity of 2D Heterostructures based on Few Layer MoS2 and Solution-Processed rGO”, Adv. Electron. Mater., (2015), accepted, DOI: 10.1002/aelm.201500267. 5)L. Huang, N. J. Huo, Y. Li, H. Chen, J. H. Yang, Z. M. Wei,* Jingbo Li,* and S.-S. Li, “Electric-Field Tunable Band Offsets in Black Phosphorus and MoS2 van der Waals p-n Heterostructure”, J. Phys. Chem. Lett., 6, 2483 (2015). 6)F. Lu, J. H. Yang, R. X. Li, N. J. Huo, Y. T. Li, Z. M. Wei* and Jingbo Li*, “Gas-dependent photoresponse of SnS nanoparticles-based photodetectors”, J. Mater. Chem. C, 3, 1397 (2015). 7)N. J. Huo, Z. M. Wei, X. Meng, J. Kang, F. Wu, S.-S. Li, S.-H. Wei,* Jingbo Li*, “Interlayer coupling and optoelectronic properties of ultrathin two-dimensional heterostructures based on graphene, MoS2 and WS2”, J. Mater. Chem. C, 3, 5467 (2015). 8)F. Lu, R. X. Li, Y. Li, N. J. Huo, J. H. Yang, Y. T. Li, B. Li, S. X. Yang, Z. M. Wei* and Jingbo Li*, “Improving the Field-Effect Performance of Bi2S3 Single Nanowires by an Asymmetric Device Fabrication”, ChemPhysChem, 16, 99 (2015). 9)Z. M. Zhong, Z. M. Wei*, X. Q. Meng, F. M. Wu, Jingbo Li*, “Ultra-sensitive humidity sensors based on ZnSb2O4 nanoparticles”, RSC Adv., 5, 2429 (2015). 10)S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y. S. Huang, C. H. Ho, J. Yan, D. F. Ogletree, S. Aloni, J. Ji, S. S. Li, Jingbo Li, F. M. Peeters, and J. Wu*, “Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling”, Nature Communications, 5,3252 (2014). 11)N. J. Huo, J. Kang, Z. M. Wei, S. S. Li, Jingbo Li* and S. H. Wei*, “Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors”, Adv. Funct. Mater., 24, 7025 (2014). 12)N. J. Huo, S. X. Yang, Z. M. Wei, S. S. Li, J. B. Xia, Jingbo Li*, “Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS2 Nanoflakes”, Scientific Reports, 4, 5209 (2014). 13)S. X. Yang, Y. Li, X. Z. Wang, N. J. Huo, J. B. Xia, S. S. Li, Jingbo Li*, “High performance few-layer GaS photodetector and its unique photo-response in different gas environments”, Nanosale, 6, 2582 (2014). 14)S. X. Yang, S. Tongay, Y. Li, Q. Yue, J. B. Xia, S. S. Li, Jingbo Li* and S. H. Wei*, “Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors”, Nanosale, 6, 7226 (2014). 15)C. Fan, T. Li, Z. M. Wei*, N. J. Huo, F. Lu, J. H. Yang, R. X. Li, S. X. Yang, B. Li, W. P. Hu*, Jingbo Li*, “Novel Micro-Rings of MoS2”, Nanosale, 6, 14652 (2014). 16)J. H. Yang, F. Lu, Y. Li, S. X. Yang, R. X. Li, N. J. Huo, C. Fan, Z. M. Wei*, Jingbo Li*, S. S. Li, “Low temperature electrical transport and photoresponsive properties of H-doped MoO3 nanosheets” , J. Mater. Chem. C, 2, 1034 (2014). 17)N. J. Huo, Y. Li, J. Kang, R. Li, Q. Xia, Jingbo Li*, “Edge-states ferromagnetism of WS2 nanosheets”, Appl. Phys. Lett., 104, 202406 (2014). 18)C. Fan, Q. Yue, J. H. Yang, Z. M. Wei*, S. X. Yang, Jingbo Li*, “Low temperature electrical and photo-responsive properties of MoSe2”, Appl. Phys. Lett., 104, 202105 (2014). 19)Z. H. Chen, X. W. Jiang, S. Dong, Jingbo Li*, S. S. Li, L. W. Wang, “Insight into the photoelectron angular dependent energy distribution of negative-electron-affinity InP photocathodes”, Appl. Phys. Lett., 104, 021120 (2014). 20)S. Tongay, D. S. Narang, J. Kang, W. Fan, C. Ko, A. V. Luce, K. X. Wang, J. Suh, K. D. Patel, V. M. Pathak, Jingbo Li, J. Wu*, “Two-dimensional semiconductor alloys: Monolayer Mo1-xWxSe2”, Appl. Phys. Lett., 104, 012101 (2014).

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