个人简介
楼海君，理学博士，于2008年获得兰州大学微电子学学士学位，于2014年获得北京大学微电子学与固体电子学博士学位，2018年10月进入浙江大学任职。
主要从事微电子新结构器件与机理研究、卫星电子系统智能化及应用系统开发，目前在IEEE Transactions on Electron Device、Semiconductor Science and Technology等期刊和会议上共发表论文30余篇，撰写书籍章节2篇、专利5个。先后主持国家自然科学基金2项。
书籍章节：
[1].Jin He,Haijun Lou,Lining Zhang and Mansun Chan,'Silicon-Based Nanowire MOSFETs:From Process and Device Physics to Simulation and Modeling,'in Nanowires-Implementations and Applications,A.Hashim,Ed.:InTech,July 2011.
[2].Xinnan Lin,Haijun Lou,Ying Xiao,Wenbo Wan,Lining Zhang and Mansun Chan.Silicon-Based Junctionless MOSFETs:Device Physics,Performance Boosters and Variations.In Outlook and Challenges of Nano Devices,Sensors,and MEMS(pp.183-236).Springer International Publishing(2017).
专利：
[1].楼海君，林信南，何进，专利申请号：201110424189.3，“无结纳米线场效应晶体管”
[2].楼海君，林信南，李冰华，何进，专利申请号：201210232954.6，“一种无结场效应晶体管”（已授权）
[3].楼海君，林信南，李丹，何进，专利申请号：201310403969.9，“遂穿场效应晶体管”（已授权，PCT）
[4].万文波，楼海君，肖颖，林信南，专利申请号：201710059574.X，“一种无结型场效应晶体管”
[5].胡晓程，魏益群，楼海君，林信南，专利申请号：CN201410188538.X，“一种多值相变存储器单元”
实验室介绍
浙江大学微小卫星研究中心是在我国航天科技专家、浙江大学航空航天学院名誉院长沈荣骏院士倡导下，于2008年12月成立的。中心由航空航天学院、信息与电子工程学系共建，初期主要成员来自浙江大学皮卫星项目组和微电子与固体电子学专业MEMS研究团队。中心主要从事微纳卫星、MEMS及传感器的研究与人才培养。主要研究方向包括：微纳卫星总体技术、测控通信技术、姿轨控技术、星载综合电子系统及智能化、微纳卫星编队及应用；MEMS技术、MEMS陀螺和加速度计；谐振式光学陀螺及其光学集成技术等。
微小卫星研究中心主页：http://microsat.zju.edu.cn/
学术交流（讲座报告）
口述报告：
[1].Haijun Lou,The Performance Investigation of Junctionless Transistor By Considering Different Recessed Gates,IEEE EDSSC2018,Shenzhen,China.
[2].Haijun Lou,The immunity of doping-less junctionless transistor variations including the line edge roughness,IEEE EDSSC2016,Hong Kong,China.
[3].Haijun Lou,Investigations of fin vertical nonuniformity effects on junctionless multigate transistor,IEEE ICSICT2012,Xi'an,China.
[4].Haijun Lou,Characteristics of subband current ratio in double-gate MOSFET,IEEE EDSSC2010,Hong Kong,China.
近期论文
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[1].Haijun Lou,Baili Zhang,Dan Li,Xinnan Lin,Jin He and Mansun Chan,Suppression of subthreshold characteristics variation for junctionless multigate transistors using high-k spacers,Semicond.Sci.Technol.30(2015)015008(7pp).
[2].Haijun Lou,Lining Zhang,Yunxi Zhu,Xinnan Lin,Shengqi Yang,Jin He and Mansun Chan,A Junctionless Nanowire Transistor With Dual-Material-Gate,IEEE Transactions on Electron Devices,Jul.2011.No.59 Issue:7,PP1829-1836.
[3].Haijun Lou,Dan Li,Yan Dong,Xinnan Lin,Jin He,Shengqi Yang and Mansun Chan,Suppression of Tunneling Leakage Current in Junctionless Nanowire Transistors,Semicond.Sci.Technol.28(2013)125016(6pp).
[4].Haijun Lou,Dan Li,Yan Dong,Xinnan Lin,Shengqi Yang,Jin He,and Mansun Chan,Effects of Fin Sidewall Angle on Subthreshold Characteristics of Junctionless Multigate Transistors,Jpn.J.Appl.Phys.52(2013)104302.
[5].Haijun Lou,Binghua Li,Xinnan Lin,Jin He.,Mansun Chan,Investigations of fin vertical nonuniformity effects on junctionless multigate transistor.Environmental Science and Technology,46,17(2012),9709-9715.
[6].Ying Xiao,Baili Zhang,Haijun Lou*,Lining Zhang,Xinnan Lin*.A compact model of subthreshold current with source/drain depletion effect for the short-channel junctionless cylindrical surrounding-gate MOSFETs.IEEE Transactions on Electron Devices,63(5),2176-2181(2016).
[7].Ying Xiao,Xinnan Lin*,Haijun Lou*,Baili Zhang,Lining Zhang and Mansun Chan.A Short Channel Double-Gate Junctionless Transistor Model Including the Dynamic Channel Boundary Effect.IEEE Transactions on Electron Devices,63(12),4661-4667(2016).
[8].Xinnan Lin,Baili Zhang,Ying Xiao,Haijun Lou*,Zhang,Lining Zhang and Mansun Chan.Analytical current model for long-channel junctionless double-gate MOSFETs.IEEE Transactions on Electron Devices,63(3),959-965(2016).
[9].Peng Xu,Haijun Lou*,Lining Zhang,Zhonghua Yu and Xinnan Lin*,“Compact Model for Double-Gate Tunnel FETs With Gate Drain Underlap”,IEEE Transactions on Electron Devices,Dec.2017.No.64 Issue:12,PP5242-5248.
[10].Wenbo Wan,Haijun Lou*,Ying Xiao and Xinnan Lin*,'Source/Drain Engineered Charge-Plasma Junctionless Transistor for the Immune of Line Edge Roughness Effect,'IEEE Transactions on Electron Devices.Vol.65,No.5,pp.1873-1879,May 2018.
[11].Yumei Yang,Haijun Lou*,Xinnan Lin,High-k Spacer Consideration Of Ultra-scaled Gate-All-Around Junctionless Transistor In Ballistic Regime,IEEE Transactions on Electron Devices.Vol.65,No.12,pp.5282-5288,Dec.2018.
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