莫炯炯 - 浙江大学 - 航空航天学院

个人简介

2018-07至今,IMEC，访问学者 2015-05至今,浙江大学，航空航天学院，航天电子工程研究所，讲师 2012-09至2014-09,瑞典隆德大学，电子与信息工程学院,博士后研究员 2009-01至2012-07,法国里尔科学与技术大学,微电子,博士,导师：Sylvain Bollaert 2008-01至2008-12,美国乔治亚理工学院,电子与计算机工程,硕士,导师：John D Cressler 2006-09至2008-07,法国里尔科学与技术大学,微电子,硕士,导师：Francois Danneville 2002-09至2006-07,上海大学,电子科学与技术专业,本科专利成果所有专利人员姓名周旻，莫炯炯，李博，朱恒，陈湜，许慧，郁发新专利名称空气桥侧引的pHMET微波功放管芯横向结构及pHEMT 专利类型发明专利专利授权国中国专利号 ZL201510589789.3 教学与课程教学年度 2018春学季课程名称电子信息技术导论课程类别研究生专业选修课授课对象研究生课程总学时数 32 科研项目名称低功耗III-V族非对称型MOSFET器件设计与可靠性研究项目来源国家基金委项目编号 KN20160897 起始年月 2017-01-01 终止年月 2019-12-31 经费总额(万元) 22.64/24 本人排名/总人数 1/1 项目名称硅基功率管的可靠性研究项目来源浙江省教育厅项目编号 N20150244 起始年月 2015-10-01 终止年月 2017-10-31 经费总额(万元) 2/2 本人排名/总人数 1/1 学术交流（讲座报告） Jiongjiong Mo,InGaAs MOSFETs with InP drain,2014 72nd Annual Device Research Conference(DRC),2014 Jiongjiong Mo,Asymmetric InGaAs MOSFETs with InGaAs source and InP drain,26th International Conference on Indium Phosphide and Related Materials(IPRM),2014 Jiongjiong Mo,Lattice matched and Pseudomorphic InGaAs MOSHEMT with f T of 200GHz,2012 International Conference on Indium Phosphide and Related Materials(IPRM),2012 Jiongjiong Mo,In0.53Ga0.47As MOSFET with gate-first and gate-last process,36th Workshop on Compound Semiconductor Devices and Integrated Circuits,2012 Jiongjiong Mo,Ft of 100GHz for 100nm multi-gate In 0.53 Ga 0.45 As MOSFET,2011 International Semiconductor Device Research Symposium(ISDRS),2011 Jiongjiong Mo,100nm-gate-length In0.47Ga0.53As multi-gate MOSFET:Fabrication and characterisation,2011 and 23rd International Compound Semiconductor Week(CSW/IPRM),2011 Jiongjiong Mo,50nm multi-gate In0.53Ga0.47As MOSFET with Ft of 150GHz,20th European Workshop on Heterostructure Technology,HeTech 2011,2011 Jiongjiong Mo,Fabrication et caractérisation de MOSFET In0.53Ga0.47As de type N en technologie auto-alignéet de longueur de grille de 200nm,13èmes Journées Nationales du Réseau Doctoral en Microélectronique,JNRDM,2010

研究领域

半导体材料器件，微电子纳米技术

近期论文

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C Wei,M Zhou,K Ding,FX Yu,JJ Mo,XL Zhao,Compact wideband dual circularly polarized L‐shaped slot antenna,Microwave and Optical Technology Letters 60(7),1685-1691,2018 M Zhou,J Mo,Z Wang,A Ka-band low power consumption MMIC core chip for T/R modules,AEU-International Journal of Electronics and Communications 91,37-43,2018 G Wang,J Liu,S Xu,J Mo,Z Wang,F Yu,The Design of Broadband LNA with Active Biasing based on Negative Technique,INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS,2018 D Xu,Z Wang,J Liu,M Zhou,W Chen,H Chen,J Mo,F Yu,All-in-One Wafer-Level Solution for MMIC Automatic Testing,Electronics 7(5),57,2018 G Wang,W Chen,J Liu,J Mo,H Chen,Z Wang,F Yu,Design of a broadband Ka-band MMIC LNA using deep negative feedback loop,IEICE Electronics Express 15(10),20180317-20180317,2018 ZY Wang,JP Qiu,H Chen,JJ Mo,FX Yu,Retrieval of high-order susceptibilities of nonlinear metamaterials,Chinese Physics B 26(9),094207,2017 J Mo,H Chen,L Wang,F Yu,Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation,Journal of Electronic Testing 33(2),255-259,2017 B Hou,H Chen,Z Wang,J Mo,J Chen,F Yu,W Wang,A 11 mW 2.4 GHz 0.18μm CMOS Transceivers for Wireless Sensor Networks,Sensors 17(2),223,2017 J Mo,X Zhao,M Zhou,Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics,Active and Passive Electronic Components,2017 W Chen,Z Wang,H Chen,Z Huang,J Mo,4–20 GHz low noise amplifier MMIC with on-chip switchable gate biasing circuit,IEICE Electronics Express 14(18),20170711-20170711,2017 J Mo,H Chen,Z Wang,F Yu,High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power Application,Journal of Sensors,2017 X Xu,J Mo,W Chen,Z Wang,Y Shang,Y Wang,Q Zheng,L Wang,A new meshing criterion for the equivalent thermal analysis of GaAs PHEMT MMICs,Microelectronics Reliability 68,30-38,2017 J Qiu,T Liu,X Chen,Y Shang,J Mo,Z Wang,H Chen,J Liu,J Lv,F Yu,A New Digital to Analog Converter Based on Low-Offset Bandgap Reference,Journal of Electrical and Computer Engineering,2017 D Zhu,J Mo,S Xu,Y Shang,Z Wang,Z Huang,F Yu,A New Capacitance-to-Frequency Converter for On-Chip Capacitance Measurement and Calibration in CMOS Technology,Journal of Electronic Testing 32(3),393-397,2016 Y Shang,H Xu,J Mo,Z Wang,X Xu,Z Tu,X Zhang,H Zheng,W Chen,The Design and Thermal Reliability Analysis of a High-Efficiency K-Band MMIC Medium-Power Amplifier with Multiharmonic Matching,Active and Passive Electronic Components,2016 J Mo,X Zhao,Regrown source/drain based InGaAs MOSFET with Si3N4 nitride spacer,ECS Journal of Solid State Science and Technology 5(10),Q257-Q259,2016 G Roll,J Mo,E Lind,S Johansson,LE Wernersson,Effect of Gate Voltage Stress on InGaAs MOSFET With HfO2 or Al2O3 Dielectric,IEEE Transactions on Device and Materials Reliability 16(2),112-116,2016 G Roll,J Mo,E Lind,S Johansson,LE Wernersson,Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric,Applied Physics Letters 106(20),203503,2015 J Mo,E Lind,LE Wernersson,InP drain engineering in asymmetric InGaAs/InP MOSFETs,IEEE Transactions on Electron Devices 62(2),501-506,2015 J Mo,E Lind,G Roll,LE Wernersson,Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors,Applied Physics Letters 105(3),033516,2014 J Mo,E Lind,LE Wernersson,Asymmetric InGaAs/InP MOSFETs with source/drain engineering,IEEE Electron Device Letters 35(5),515-517,2014