个人简介

罗皓泽，浙江大学“百人计划”研究员，海外高层次人才计划青年项目入选者，博士生导师。 学术经历 作为核心成员，参与国家重大科技专项、国家基金重大项目课题、“青年973”、丹麦独立研究理事会基金重大项目等，主要从事功率半导体器件(电力电子器件)可靠性领域的基础研究和技术攻关。近五年内，已发表SCI期刊论文30余篇，申请国家发明专利20余项，已授权10余项。 教育经历 2004.09-2011.06合肥工业大学学士/硕士 2015.01-2015.04英国纽卡斯尔大学访问博士生 2011.09-2015.09浙江大学博士 工作经历 2015.10-2018.05丹麦奥尔堡大学博士后 2018.06-2019.09英国丹尼克斯半导体公司高级研发工程师 荣誉奖励 IEEE ECCE最佳论文一等奖 《电源学报》年度优秀论文奖 电工技术学会年会优秀论文奖 浙江大学博士研究生国家奖学金 浙江大学“优秀研究生”称号 浙江大学“三好研究生”称号

研究领域

大功率电力电子器件技术及其应用

功率半导体器件技术与应用研究，包括功率半导体器件的应用特性分析、功率半导体器件的可靠性研究、功率半导体器件的封装与工艺发开等。

近期论文

查看导师最新文章 （温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

部分期刊/会议论文（更新于2019年10月1日） 1.Haoze Luo,Francesco Iannuzzo,Nick Baker,Frede Blaabjerg,Wuhua Li,and Xiangning He,“Study of Current Density Influence on Bond Wire Degradation Rate in SiC MOSFET Modules,”IEEE J.Emerg.Sel.Topics Power Electron.(DOI:10.1109/JESTPE.2019.2920715). 2.Haoze Luo,Francesco Iannuzzo,and Marcello Turnaturi,“Role of Threshold Voltage Shift in Highly Accelerated Power Cycling Tests for SiC MOSFET Modules,”IEEE J.Emerg.Sel.Topics Power Electron.(DOI:10.1109/JESTPE.2019.2894717). 3.Haoze Luo,Paula Diaz Reigosa,Francesco Iannuzzo and Frede Blaabjerg,“On-line solder layer degradation measurement for SiC-MOSFET modules under accelerated power cycling condition,”Microelectron.Reliab.,vol.88-90,pp.563-567,Sep.2018. 4.Haoze Luo,Xiang Wang,Chongchong Zhu,Wuhua Li,and Xiangning He,“Investigation and Emulation of Junction Temperature for High-Power IGBT Modules Considering Grid Codes,”IEEE J.Emerg.Sel.Topics Power Electron.,vol.6,no.2,pp.930-940,June.2018. 5.Haoze Luo Wuhua Li,Xiangning He,Francesco Iannuzzo and Frede Blaabjerg,“Unified Dynamic Thermo-Sensitive Electrical Parameters via Emitter-Auxiliary Inductor of High-Power IGBT Modules for Junction Temperature Extraction,”IEEE Trans.Ind.Electron.vol.65,no.6,pp.4724-4738,June.2018. 6.Haoze Luo,Wuhua Li,Xiangning He,Francesco Iannuzzo and Frede Blaabjerg,“Uneven temperature effect evaluation in high-power IGBT inverter legs and relative test platform design,”Microelectron.Reliab.,vol.76-77,pp.123-130,Sep.2017. 7.Haoze Luo,Nick Baker,Francesco Iannuzzo and Frede Blaabjerg,“Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules,”Microelectron.Reliab.,vol.76-77,pp.415-419,Sep.2017. 8.Haoze Luo,Yuxiang Chen,Wuhua Li,and Xiangning He,“Online High-Power P-i-N Diode Junction Temperature Extraction with Reverse Recovery Fall Storage Charge,”IEEE Trans.Power Electron.,vol.32,no.4,pp.2558-2567,Apr.2017. 9.Haoze Luo,Francesco Iannuzzo,Paula Diaz Reigosa,Frede Blaabjerg,Wuhua Li and Xiangning He,“Modern IGBT gate driving methods for enhancing reliability of high-power converters—An overview,”Microelectron.Reliab.,vol.58,pp.141-150,2016. 10.Haoze Luo,Yuxiang Chen,Pengfei Sun,Wuhua Li,and Xiangning He,“Junction Temperature Extraction Approach with Turn-off Delay Time for High-Voltage High-Power IGBT Modules,”IEEE Trans.Power Electron.vol.31,no.7,pp.5122-5132,Jul.2016. 11.Haoze Luo,Wuhua Li,Xiangning He,“On-Line High-Power P-i-N Diode Chip Temperature Extraction and Prediction Method with Maximum Recovery Current di/dt,”IEEE Trans.Power Electron.,vol.30,no.5,pp.2395-2404,May.2015. 12.Haoze Luo,Yufei Dong,Wuhua Li and Xiangning He,“Module Multilevel-clamped Composited Multilevel Converter(M-MC2)with Dual T-Type Modules and One Diode Module,”Journal of Power Electron.,vol.14,no.6,pp.1189-1196,Nov.2014. 13.Haoze Luo,Francesco Iannuzzo,Frede Blaabjerg,Wuhua Li and Xiangning He,“Separation Test Method for Investigation of Current Density Effects on Bond Wires of SiC Power MOSFET Modules,”in Proc.IECON’17,2017,pp.1525–1530. 14.Haoze Luo,Francesco Iannuzzo,Frede Blaabjerg,Marcello Turnaturi and Emilio Mattiuzzo,“Aging Precursors and Degradation Effects of SiC-MOSFET Modules Under Highly Accelerated Power Cycling Conditions,”in Proc.IEEE ECCE America’17,2017,pp.2506-2511. 15.Haoze Luo,Francesco Iannuzzo,Frede Blaabjerg,Xiang Wang,Wuhua Li and Xiangning He,“Elimination of Bus Voltage Impact on Temperature Sensitive Electrical Parameter During Turn-on Transition for Junction Temperature Estimation of High-power IGBT Modules,”in Proc.IEEE ECCE America’17,2017,pp.5892-5898. 16.Haoze Luo,Francesco Iannuzzo,Frede Blaabjerg,Wuhua Li and Xiangning He,“Effects of uneven temperature of IGBT and diode on switching characteristics of bridge legs in MW-level power converters,”in Proc.IEEE PEDG’16,2016,pp.1-7. 17.Haoze Luo,Francesco Iannuzzo,Ke Ma,Frede Blaabjerg,Wuhua Li and Xiangning He,“Active gate driving method for reliability improvement of IGBTs via junction temperature swing reduction,”in Proc.PEDG’16,2016,pp.1-7. 18.Haoze Luo,Francesco Iannuzzo,Frede Blaabjerg,Wuhua Li and Xiangning He,“Estimation method for turn-off collector voltage of IGBTs using emitter-auxiliary inductor,”IPEMC-ECCE Asia 2016,pp.3670-3675. 19.Haoze Luo,Pengfei Sun,Yufei Dong,Wuhua Li,Xiangning He,Guodong Chen,Enxing Yang and Zuyi Dong,“P-i-N diode chip temperature extraction method by investigation into maximum recovery current rate di/dt,”in Proc.IEEE ECCE’14,2014,pp.4022-4024. 20.Haoze Luo,Pengfei Sun,Yufei Dong,Wuhua Li and Xiangning He,“Performance analysis of composite five-level converter with dual T type and diode modules,”in Proc.IEEE ECCE Asia’13,2013,pp.190-194.