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期刊论文（*通讯作者）
1.(invited)S.Yang*,S.Han,K.Sheng,and K.J.Chen,“Dynamic on-resistance in GaN power devices:Mechanisms,characterizations and modeling,”IEEE J.Emerg.Sel.Topics Power Electron.,vol.7,no.3,pp.1425-1439,Sep.2019.
2.S.Han,S.Yang*,and K.Sheng,“Fluorine-implanted termination for vertical GaN Schottky rectifier with high blocking voltage and low forward voltage drop,”IEEE Electron Device Lett.,vol.40,no.7,pp.1040–1043,Jul.2019.
3.S.Han,S.Yang*,R.Li,X.Wu,and K.Sheng,“Current-collapse-free and fast reverse recovery performance in vertical GaN-on-GaN Schottky barrier diode,”IEEE Trans.Power Electron.,vol.36,no.6,pp.5012–5018,Jun.2019.(Featured inCompound Semiconductorand Semiconductor Today)
4.Y.Liu,S.Yang*,S.Han,and K.Sheng,“Investigation of surge current capability of GaN E-HEMTs in the third quadrant:the impact of p-GaN contact,”IEEE J.Emerg.Sel.Topics Power Electron.,vol.7,no.3,pp.1465-1474,Sep.2019.
5.(invited feature article)S.Yang*,et al.,“Obliterating dynamic on-resistance degradation,”Compound Semiconductor Magazine,pp.56–60,Mar.2019.
6.R.Li,X.Wu,S.Yang,and K.Sheng,“Dynamic on-state resistance test and evaluation of GaN power devices under hard and soft switching conditions by double and multiple pulses,”IEEE Trans.Power Electron.,vol.34,no.2,pp.1044–1053,Feb.2019.(Highlighted Paper)
7.H.Wang,J.Wang,L.Liu,N.Ren,J.Wu,C.Wang,S.Yang,and K.Sheng,“Design and characterization of area-efficient trench termination for 4H-SiC devices,”IEEE J.Emerg.Sel.Topics Power Electron.,vol.7,no.3,pp.1519-1526,Sep.2019.
8.S.Han,S.Yang*,and K.Sheng,“High-voltage and high-ION/OFF vertical GaN-on-GaN Schottky barrier diode with nitridation-based termination,”IEEE Electron Device Lett.,vol.39,no.4,pp.572–575,Apr.2018.(Featured inCompound Semiconductorand Semiconductor Today)
9.Z.Cao,Y.Zhu,Y.Liu,S.Dong,J.Zhao,Y.Wang,S.Yang*,and J.Fu*,“High-resolution separation of DNA/proteins through nanorod sieving matrix,”Biosensors and Bioelectronics,vol.137,pp.8–14,Jul.2019.
10.H.Zhang,J.Tu,S.Yang*,K.Sheng and P.Wang,“Optimization of gate geometry towards high-sensitivity AlGaN/GaN pH sensor,”Talanta,vol.205,no.1,Dec.2019.120134.
11.H.Wang,J.Wang,L.Liu,Y.Li,B.Wang,H.Xu,S.Yang,and K.Sheng,“Trench termination with SiO2-encapsulated dielectric for near-ideal breakdown voltage in 4H-SiC devices,”IEEE Electron Device Lett.,vol.39,no.12,pp.1900–1903,Dec.2018.
12.Y.Qiu,S.Yang,and K.Sheng,“Photolithographic patterning of cytop with limited contact angle degradation,”Micromachines,vol.9,no.10,p.509,Oct.2018.
13.(invited)H.Amano,et al.,'The 2018 GaN power electronics roadmap,'J.Phys.D:Appl.Phys.,vol.51,no.16,p.163001,Mar.2018.(ESI高被引论文)
14.S.Yang*,C.Zhou,S.Han,J.Wei,K.Sheng,and K.J.Chen,“Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices,”IEEE Trans.Electron Devices,vol.64,no.12,pp.5048–5056,Dec.2017.
15.(invited)S.Yang*,S.Liu,Y.Lu,and K.J.Chen,“Trapping mechanisms in insulated-gate GaN power devices:Understanding and characterization techniques,”Phys.Stat.Sol.(a),vol.214,no.3,pp.1600607-1–1600607-8,Mar.2017.
16.K.Sheng,S.Yang*,Q.Guo,and H.Xu,“Recent progress in SiC and GaN power devices,”ECS Trans.,vol.80,no.7,pp.37–51,July 2017.
17.J.Sun,G.Longobardi,F.Udrea,C.Zhu,G.Camuso,S.Yang,R.Garg,M.Imam,and A.Charles,“Substantiation of buried two dimensional hole gas(2DHG)existence in GaN-on-Si epitaxial heterostructure,”Appl.Phys.Lett.,vol.110,no.16,p.163506,Apr.2017.
18.S.Yang,Y.Lu,H.Wang,S.Liu,C.Liu,and K.J.Chen,“Dynamic gate stress-induced VTH shift and its impact on dynamic RON in GaN MIS-HEMTs,”IEEE Electron Device Lett.,vol.37,no.2,pp.157–160,Feb.2016.
19.(invited)S.Yang,S.Liu,C.Liu,M.Hua,and K.J.Chen,“Gate stack engineering for GaN lateral power transistors,”Semicond.Sci.and Technol.,vol.31,no.2,pp.024001-1–024001-10,Feb.2016.
20.S.Yang,S.Liu,Y.Lu,C.Liu,and K.J.Chen,“AC-capacitance techniques for interface trap analysis in GaN-based buried-channel MIS-HEMTs,”IEEE Trans.Electron Devices,vol.62,no.6,pp.1870–1878,June 2015.
21.S.Yang,S.Liu,C.Liu,Y.Lu,and K.J.Chen,“Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors,”Appl.Phys.Lett.,vol.105,no.22,pp.223508-1–223508-4,Dec.2014.
22.S.Yang,C.Zhou,Q.Jiang,J.Lu,B.Huang,and K.J.Chen,“Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating effects,”Appl.Phys.Lett.,vol.104,no.1,pp.013504-1–013504-4,Jan.2014.
23.S.Yang,Q.Jiang,B.Li,Z.Tang,and K.J.Chen,“GaN-to-Si vertical conduction mechanisms in AlGaN/GaN-on-Si lateral heterojunction FET structures,”Phys.Stat.Sol.(c),vol.11,no.3–4,pp.949–952,Mar.2014.
24.S.Yang,Z.Tang,K.Wong,Y.Lin,C.Liu,Y.Lu,S.Huang,and K.J.Chen,“High-quality interface in Al2O3/GaN/AlGaN/GaN MIS-structures with in situ pre-gate plasma nitridation,”IEEE Electron Device Lett.,vol.34,no.12,pp.1497–1499,Dec.2013.(ESI高被引论文)
25.S.Yang,S.Huang,M.Schnee,Q.-T.Zhao,J.Schubert,and K.J.Chen,“Fabrication and characterization of enhancement-mode high-κLaLuO3-AlGaN/GaN MIS-HEMTs,”IEEE Trans.Electron Devices,vol.60,no.10,pp.3040–3046,Oct.2013.
26.S.Yang,S.Huang,M.Schnee,Q.-T.Zhao,J.Schubert,and K.J.Chen,“Enhancement-mode LaLuO3-AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors using fluorine plasma ion implantation,”Jpn.J.Appl.Phys.,vol.52,no.8,pp.08JN02-1–08JN02-4,Aug.2013.
27.S.Yang,S.Huang,H.Chen,C.Zhou,Q.Zhou,M.Schnee,Q.-T.Zhao,J.Schubert,and K.J.Chen,“AlGaN/GaN MISHEMTs with high-κLaLuO3 gate dielectric,”IEEE Electron Device Lett.,vol.33,no.7,pp.979–981,July 2012.
28.S.Yang,S.Huang,H.Chen,M.Schnee,Q.-T.Zhao,J.Schubert,and K.J.Chen,“Characterization of high-κLaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition,”Appl.Phys.Lett.,vol.99,no.18,pp.182103-1–182103-3,Nov.2011.
29.(invited)K.J.Chen,S.Yang,et al.,“Toward reliable MIS-and MOS-gate structures for GaN lateral power devices,”Phys.Stat.Sol.(a),vol.213,no.4,pp.861–867,Apr.2016.
30.(invited,cover article)K.J.Chen,S.Yang,et al.,“Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs,”Phys.Stat.Sol.(a),vol.212,no.5,pp.1059–1065,May 2015.
31.C.Liu,S.Yang,S.Liu,Z.Tang,H.Wang,Q.Jiang,and K.J.Chen,“Thermally stable enhancement-mode GaN MIS-HEMT with partially recessed fluorine-implanted barrier,”IEEE Electron Device Lett.,vol.36,no.4,pp.318–320,Apr.2015.
32.S.Liu,S.Yang,Z.Tang,Q.Jiang,C.Liu,M.Wang,B.Shen,and K.J.Chen,“Interface/border trap characterization of Al2O3/AlN/GaN MOS structures with an AlN interfacial layer,”Appl.Phys.Lett.,vol.106,no.5,pp.051605-1–051605-4,Mar.2015.
33.S.Liu,S.Yang,Z.Tang,Q.Jiang,C.Liu,M.Wang,and K.J.Chen,“Al2O3/AlN/GaN MOS-channel HEMTs with an AlN interfacial layer,”IEEE Electron Device Lett.,vol.35,no.7,pp.723–725,July 2014.
34.Q.Zhou,S.Yang,W.Chen,B.Zhang,Z.Feng,S.Cai,and K.J.Chen,“High voltage InAlN/GaN HEMTs with nonalloyed source/drain for RF power applications,”Solid-State Electronics,vol.91,pp.19–23,Jan.2014.
35.Y.Lu,S.Yang,Q.Jiang,Z.Tang,and K.J.Chen,“Characterization of VT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs,”Phys.Stat.Sol.(c),vol.10,no.11,pp.1397-1400,Nov.2013.
36.S.Huang,S.Yang,J.Roberts and K.J.Chen,'Characterization of Vth-instability in Al2O3/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement,'Phys.Stat.Sol.(c),vol.9,no.3–4,pp.923–926,Mar.2012.
37.S.Huang,S.Yang,J.Roberts,and K.J.Chen,“Threshold voltage instability in Al2O3/GaN/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors,”Jpn.J.Appl.Phys.,vol.50,no.11,p.110202,Nov.2011.
38.M.Hua,C.Liu,S.Yang,S.Liu,K.Fu,Z.Dong,Y.Cai,B.Zhang,and K.J.Chen,“Characterization of leakage and reliability of SiNx gate dielectric by low pressure chemical vapor deposition for GaN based MIS-HEMTs,”IEEE Trans.Electron Devices,vol.62,no.10,pp.3215–3222,Oct.2015.
39.M.Hua,C.Liu,S.Yang,S.Liu,K.Fu,Z.Dong,Y.Cai,B.Zhang,and K.J.Chen,“GaN-based MIS-HEMTs using LPCVD-SiNx as gate dielectric,”IEEE Electron Device Lett.,vol.36,no.5,pp.448–450,May 2015.
40.S.Huang,Q.Jiang,S.Yang,Z.Tang,and K.J.Chen,“Mechanism of PEALD-grown AlN passivation for AlGaN/GaN HEMTs:compensation of interface traps by polarization charges,”IEEE Electron Device Lett.,vol.34,no.2,pp.193–195,Feb.2013.
41.S.Huang,Q.Jiang,S.Yang,C.Zhou,and K.J.Chen,“Effective passivation of AlGaN/GaN HEMTs by ALD-grown AlN thin film,”IEEE Electron Device Lett.,vol.33,no.4,pp.516–518,Apr.2012.(ESI高被引论文)
42.Y.Lu,Q.Jiang,Z.Tang,S.Yang,C.Liu,and K.J.Chen,“Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition,”Appl.Phys.Express,vol.8,no.6,pp.064101-1–064101-4,May 2015.
43.Q.Jiang,Z.Tang,C.Zhou,S.Yang,and K.J.Chen,“Substrate-coupled cross-talk effects on an AlGaN/GaN-on-Si smart power IC platform,”IEEE Trans.Electron Devices,vol.61,no.11,pp.3808–3813,Nov.2014.
44.Y.Lu,B.Li,X.Tang,Q.Jiang,S.Yang,Z.Tang,and K.J.Chen,“Normally-off Al2O3-AlGaN/GaN MIS-HEMT with transparent gate electrode for gate degradation investigation,”IEEE Trans.Electron Devices,vol.62,no.3,pp.821–827,Mar.2015.
45.Z.Tang,Q.Jiang,Y.Lu,S.Huang,S.Yang,X.Tang,and K.J.Chen,“600-V normally off SiNx/AlGaN/GaN MIS-HEMT with large gate swing and low current collapse,”IEEE Electron Device Lett.,vol.34,no.11,pp.1373–1375,Nov.2013.(ESI高被引论文)
46.S.Huang,K.Wei,Z.Tang,S.Yang,C.Liu,L.Guo,B.Shen,J.Zhang,X.Kong,G.Liu,Y.Zheng,X.Liu,and K.J.Chen,“Effects on interface oxidation on the transport behavior of the two-dimensional-electron-gas heterostructures by plasma-enhanced-atomic-layer deposited AlN passivation,”J.Appl.Phys.,vol.114,no.14,pp.144509-1–144509-6,Oct.2013.
47.S.Huang,K.Wei,G.Liu,Y.Zheng,L.Pang,X.Kong,X.Liu,Z.Tang,S.Yang,Q.Jiang,and K.J.Chen,“High-fMAX high Johnson’s figure-of-merit 0.2-μm gate AlGaN/GaN HEMTs on silicon substrate with AlN passivation,”IEEE Electron Device Lett.,vol.35,no.3,pp.315–317,Mar.2014.
会议论文
48.S.Yang*,S.Han,R.Li,and K.Sheng,“1 kV/1.3 mΩ·cm2 vertical GaN-on-GaN Schottky barrier diodes with high switching performance,”30th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Chicago,USA,May 13-17,2018.(IEEE ISPSD Charitat Young Researcher Award)
49.S.Han,S.Yang*,Y.Li,Y.Liu,and K.Sheng,“Photon-enhanced conductivity modulation and surge current capability in vertical GaN power rectifiers,”31st Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Shanghai,China,May 19-23,2019.(oral presentation,acceptance rate~15%)
50.Y.Liu,S.Han,S.Yang*,and K.Sheng,“Surge current capability of GaN E-HEMT in reverse conduction mode,”31st Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Shanghai,China,May 19-23,2019.
51.(invited)S.Yang*,“GaN power electronics:From lateral to vertical,”2018 Conference on Optoelectronic and Microelectronic Materials and Devices(COMMAD),Perth,Australia,Dec.9-13,2018.
52.G.Longobardi,S.Yang,et al.,“Concept to suppress the vertical leakage current in GaN-on-Si HEMT transistors,”Int.Workshop on Nitride Semiconductors(IWN2018),Kanazawa,Japan,Nov.11-16,2018.(oral presentation)
53.H.Zhang,S.Yang*,and K.Sheng,“GaN-on-Si lateral power devices with symmetric vertical leakage:The impact of floating substrate,”30th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Chicago,USA,May 13-17,2018.(oral presentation)
54.J.Sun,H.Xu,S.Yang,and K.Sheng,'Electrical characterization of 1.2kV SiC MOSFET at extremely high junction temperature,”30th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Chicago,USA,May 13-17,2018.
55.H.Xu,J.Sun,J.Wu,H.Wang,S.Yang,and K.Sheng,'Surge capability of 1.2kV SiC diode fabricated with high temperature implantation,”30th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Chicago,USA,May 13-17,2018.
56.B.Wang,H.Wang,X.Zhong,S.Yang,Q.Guo,and K.Sheng,'Characterization of 1.2kV SiC super-junction SBD implemented by trench and implantation technique,'30th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Chicago,USA,May 13-17,2018.
57.Y.Liu,S.Han,S.Yang*,and K.Sheng,“Design of fluorine-ion-based junction termination extension for vertical GaN Schottky rectifier,”2018 IEEE International Power Electronics and Application Conference and Exposition(PEAC),Shenzhen,China,Nov.4-7,2018.
58.S.Yang,et al.,“Buffer trapping-induced RON degradation in GaN-on-Si power transistors:Role of electron injection from Si substrate,”29th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Sapporo,Japan,May 28-June 1,2017.(oral presentation)
59.W.Zhou,S.Yang,X.Wu,and K.Sheng,“Optimization of SiC MOSFETs for 20kW DC/DC converter,”29th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Sapporo,Japan,May 28-June 1,2017.
60.G.Longobardi,S.Yang,et al.,“On the vertical leakage of GaN-on-Si lateral transistors and the effect of emission and trap-assisted-tunneling through the AlN/Si barrier,”29th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Sapporo,Japan,May 28-June 1,2017.
61.J.Sun,H.Xu,X.Wu,S.Yang,Q.Guo,and K.Sheng,“Short Circuit Capability and High Temperature Channel Mobility of SiC MOSFETs,”29th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Sapporo,Japan,May 28-June 1,2017.
62.(invited)S.Yang,“Buffer induced challenges in GaN-on-Si power devices,”Int.Forum on Wide Bandgap Semiconductors(IFWS),Beijing,China,Nov.15-17,2016.
63.(invited)S.Yang,et al.,“Performance enhancement and characterization techniques for GaN power devices,”43rd Int.Symp.on Compound Semiconductors(ISCS),Toyama,Japan,June 26-30,2016.
64.S.Yang,et al.,“Impact of VTH shift on RON in E/D-mode GaN-on-Si power transistors:Role of dynamic stress and gate overdrive,”28th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Prague,Czech Republic,June 12-16,2016.(oral presentation)
65.(invited)S.Yang,et al.,“Nitridation interfacial-layer technology for enhanced stability in GaN-based power devices,”2015 IEEE International Symposium on Radio-Frequency Integration Technology(RFIT2015),Sendai,Japan,Aug.26-28,2015.
66.S.Yang,et al.,“Thermally induced threshold voltage instability of III-nitride MIS-HEMTs and MOSC-HEMTs:underlying mechanisms and optimization schemes,”2014 IEEE International Electron Devices Meeting(IEDM'14),San Francisco,USA,Dec.15-17,2014.(oral presentation)
67.(invited)S.Yang and K.J.Chen,“Nitridation interfacial-layer technology:enabling low interface trap density and high stability in III-nitride MIS-HEMTs,”2014 IEEE Int.Conf.on Solid-State and Integrated Circuit Technology(ICSICT2014),Guilin,China,Oct.28-31,2014.
68.S.Yang,et al.,“Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-heterostructures using frequency-and temperature-dependent C-V techniques,”2013 IEEE International Electron Devices Meeting(IEDM'13),Washington DC,USA,Dec.9-11,2013.(oral presentation)
69.S.Yang,et al.,“GaN-to-Si vertical conduction mechanisms in AlGaN/GaN-on-Si lateral heterojunction FET structures,”10th Int.Conf.on Nitride Semiconductors(ICNS-10),Washington DC,USA,Aug.25-29,2013.
70.S.Yang,et al.,“GaN buffer traps in GaN-on-Si structure studied by thermally stimulated current and back-gating measurements,”10th Int.Conf.on Nitride Semiconductors(ICNS-10),Washington DC,USA,Aug.25-29,2013.(oral presentation)
71.(invited)S.Yang,et al.,“Enhancement-mode AlGaN/GaN MISHEMTs with fluorinated high-κLaLuO3 gate dielectric,”Int.Workshop on Nitride Semiconductors(IWN2012),Sapporo,Japan,Oct.14-19,2012.
72.(invited)K.J.Chen,S.Yang,et al.,“Toward reliable MIS-and MOS-gate structures for GaN power devices,”42nd Int.Symp.on Compound Semiconductors(ISCS),Santa Barbara,USA,June 28-July 2,2015.
73.(invited)K.J.Chen,S.Yang,et al.,“Dielectric/III-N interfaces with nitridation interfacial-layer for GaN power electronics,”45th IEEE Semiconductor Interface Specialists Conference(SISC),San Diego,USA,Dec.10-13,2014.
74.(invited)K.J.Chen,S.Yang,et al.,“Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMT,”Int.Workshop on Nitride Semiconductors(IWN2014),Warsaw,Poland,Aug.24-29,2014.
75.S.Liu,S.Yang,et al.,“High-performance gate-recessed normally-off GaN MIS-HEMTs with thin barrier layer,”11th Int.Conf.on Nitride Semiconductors(ICNS-11),Beijing,China,Aug.30-Sep.4,2015.
76.S.Liu,S.Yang,et al.,“Interface characterization of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an AlN interfacial layer,”Int.Workshop on Nitride Semiconductors(IWN2014),Warsaw,Poland,Aug.24-29,2014.(oral presentation)
77.S.Liu,S.Yang,et al.,“Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer,”26th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Hawaii,USA,June 15-19,2014.(oral presentation)
78.Y.Lu,S.Yang,et al.,“Characterization of VT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs,”40th Int.Symp.on Compound Semiconductors(ISCS),Kobe,Japan,May 19-23,2013.(oral presentation)
79.S.Huang,S.Yang,et al.,“Characterization of Vth-instability in Al2O3/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement,”9th Int.Conf.on Nitride Semiconductors(ICNS-9),Glasgow,UK,July 10-15,2011.(oral presentation)
80.M.Hua,C.Liu,S.Yang,et al.,“Gate leakage and time-dependent dielectric breakdown characteristics of LPCVD-SiNx/AlGaN/GaN MIS-HEMTs,”11th Int.Conf.on Nitride Semiconductors(ICNS-11),Beijing,China,Aug.30-Sep.4,2015.(oral presentation)
81.C.Liu,H.Wang,S.Yang,et al.,“Improved thermal stabilities in normally-off GaN MIS-HEMTs,”Int.Conf.on Compound Semiconductor Manufacturing Technology(CS-ManTech),Arizona,USA,May 18-21,2015.(oral presentation)
82.M.Hua,C.Liu,S.Yang,et al.,“650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric,”27th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Hong Kong,May 10-14,2015.
83.C.Liu,H.Wang,S.Yang,et al.,“Normally-off GaN MIS-HEMT with improved thermal stability in DC and dynamic performance,”27th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Hong Kong,May 10-14,2015.
84.S.Huang,Q.Jiang,S.Yang,et al.,“Mechanism of PEALD-grown AlN passivation of AlGaN/GaN HEMTs,”Int.Workshop on Nitride Semiconductors(IWN2012),Sapporo,Japan,Oct.14-19,2012.(oral presentation)
85.Z.Tang,Q.Jiang,S.Huang,Y.Lu,S.Yang,et al.,“Monolithically integrated 600-V E/D-Mode SiNx/AlGaN/GaN MIS-HEMTs and their applications in low-standby-power start-up circuit for switched-mode power supplies,”2013 IEEE International Electron Devices Meeting(IEDM'13),Washington DC,USA,Dec.9-11,2013.(oral presentation)
86.S.Huang,Q.Jiang,K.Wei,G.Liu,J.Zhang,X.Wang,Y.Zheng,B.Sun,C,Zhao,H.Liu,Z.Jin,X.Liu,H.Wang,S.Liu,Y.Lu,C.Liu,S.Yang,et al.,“High-temperature low-damage gate recess technique and ozone-assisted ALD-grown Al2O3 gate dielectric for high-performance normally-off GaN MIS-HEMTs,”2014 IEEE International Electron Devices Meeting(IEDM'14),San Francisco,USA,Dec.15-17,2014.(oral presentation)
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