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个人简介

杨树,浙江大学电气工程学院研究员,博士生导师。 2010年于复旦大学获微电子学学士学位;2014年于香港科技大学获电子计算机工程博士学位(导师:IEEE Fellow,Kevin J.Chen教授);2014年-2016年分别于香港科技大学担任客座助理教授、英国剑桥大学任博士后(合作教授:英国皇家工程院院士Florin Udrea教授)。 主要从事宽禁带半导体电力电子器件的设计、微纳制造、分析表征以及可靠性研究。在氮化镓MIS器件界面优化、硅基氮化镓器件动态特性退化机制、基于同质外延的垂直型氮化镓电力电子器件等方向开展了一系列工作。自主研制出1kV/1.2mΩ·cm2单极型和1.8kV/0.5mΩ·cm2双极型垂直氮化镓功率器件,克服了困扰传统平面型氮化镓器件的动态性能退化问题。在本领域权威期刊IEEE EDL、IEEE T-ED、IEEE T-PEL、IEEE JESTPE,电子器件和功率半导体顶级会议IEDM、ISPSD等共发表70余篇论文(其中SCI论文30余篇),其中4篇论文入选ESI高被引论文,1篇论文被德国Wiley-VCH期刊PSSA选为封面,受邀在IWN’2012、RFIT’2015、ISCS’2016、COMMAD’2018、APWS’2019、ECPE Workshop’2020等会议上做特邀报告,编写英文专著章节2章。作为第一/通讯作者的研究成果6次被Compound Semiconductor和Semiconductor Today国际产业杂志专题报道。国家重点研发计划重点专项课题负责人,主持国家自然科学基金面上项目和青年项目、教育部联合基金、浙江省杰出青年科学基金、台达电力电子科教基金等项目。首批Hong Kong PhD Fellowship获奖者之一;2015年获得香港科技大学PhD Research Excellence Award(每年1~3位获奖者);2016年入选首届CASA第三代半导体卓越创新青年;2018年获得IEEE ISPSD Charitat Young Researcher Award(每年1~2位获奖者,是该奖项创办30年以来中国大陆首位获奖者);2020年获得中达青年学者奖、中国电源学会优秀青年奖。 研究生培养及招生: 实验室每年招收博士生和硕士生2~4名。欢迎有志于从事电力电子器件及应用研究的同学加入,有意者请将个人简历发至 奖励荣誉 IEEE ISPSD 2018 Charitat Young Researcher Award(每年1~2位获奖者;该奖项创办30年以来中国大陆首位获奖者) 中达青年学者奖 中国电源学会优秀青年奖 香港科技大学PhD Research Excellence Award(每年1~3位获奖者) 首届“第三代半导体卓越创新青年”(每年5~10位获奖者) 首批Hong Kong PhD Fellowship 上海市优秀毕业生 国家一等奖学金 研究与成果 Selected Publications(*corresponding author) 1.(invited)S.Yang*,S.Han,K.Sheng,and K.J.Chen,“Dynamic on-resistance in GaN power devices:Mechanisms,characterizations and modeling,”IEEE J.Emerg.Sel.Topics Power Electron.,vol.7,no.3,pp.1425-1439,Sep.2019. 2.S.Han,S.Yang*,R.Li,X.Wu,and K.Sheng,“Current-collapse-free and fast reverse recovery performance in vertical GaN-on-GaN Schottky barrier diode,”IEEE Trans.Power Electron.,vol.36,no.6.,pp.5012-5018,Jun.2019.(Featured in Compound Semiconductor and Semiconductor Today) 3.S.Han,S.Yang*,and K.Sheng,“High-voltage and high-ION/IOFF vertical GaN-on-GaN Schottky barrier diode with nitridation-based termination,”IEEE Electron Device Lett.,vol.39,no.4,pp.572–575,Apr.2018.(Featured in Compound Semiconductor and Semiconductor Today) 4.S.Han,S.Yang*,and K.Sheng,“Fluorine-implanted termination for vertical GaN Schottky rectifier with high blocking voltage and low forward voltage drop,”IEEE Electron Device Lett.,vol.40,no.7,pp.1040–1043,Jul.2019. 5.Y.Liu,S.Yang*,S.Han,and K.Sheng,“Investigation of surge current capability of GaN E-HEMTs in the third quadrant:the impact of p-GaN contact,”IEEE J.Emerg.Sel.Topics Power Electron.,vol.7,no.3,pp.1465-1474,Sep.2019. 6.S.Yang*,C.Zhou,S.Han,J.Wei,K.Sheng,and K.J.Chen,“Impact of substrate bias polarity on buffer-related current collapse in AlGaN/GaN-on-Si power devices,”IEEE Trans.Electron Devices,vol.64,no.12,pp.5048–5056,Dec.2017. 7.S.Yang*,S.Han,R.Li,and K.Sheng,“1 kV/1.3 mΩ·cm2 vertical GaN-on-GaN Schottky barrier diodes with high switching performance,”30th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Chicago,USA,May 13-17,2018.(IEEE ISPSD Charitat Young Researcher Award) 8.S.Yang*,Z.Tang,K.Wong,Y.Lin,C.Liu,Y.Lu,S.Huang,and K.J.Chen,“High-quality interface in Al2O3/GaN/AlGaN/GaN MIS-structures with in situ pre-gate plasma nitridation,”IEEE Electron Device Lett.,vol.34,no.12,pp.1497–1499,Dec.2013.(ESI Highly Cited Paper;Featured in Compound Semiconductor and Semiconductor Today) 9.S.Yang*,S.Liu,Y.Lu,C.Liu,and K.J.Chen,“AC-capacitance techniques for interface trap analysis in GaN-based buried-channel MIS-HEMTs,”IEEE Trans.Electron Devices,vol.62,no.6,pp.1870–1878,June 2015. 10.S.Yang*,Y.Lu,H.Wang,S.Liu,C.Liu,and K.J.Chen,“Dynamic gate stress-induced VTH shift and its impact on dynamic RON in GaN MIS-HEMTs,”IEEE Electron Device Lett.,vol.37,no.2,pp.157–160,Feb.2016. 11.S.Yang*,et al.,“Thermally induced threshold voltage instability of III-nitride MIS-HEMTs and MOSC-HEMTs:underlying mechanisms and optimization schemes,”2014 IEEE International Electron Devices Meeting(IEDM’14),San Francisco,USA,Dec.15-17,2014. 12.S.Yang,C.Zhou,Q.Jiang,J.Lu,B.Huang,and K.J.Chen,“Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating effects,”Appl.Phys.Lett.,vol.104,no.1,pp.013504-1–013504-4,Jan.2014. 13.H.Amano,et al.,“The 2018 GaN Power Electronics Roadmap,”J.Phys.D:Appl.Phys.,vol.51,no.16,p.163001,Mar.2018.(ESI Highly Cited Paper) 专著章节 K.J.Chen and S.Yang,'Recent Progress in GaN-on-Si HEMT,'in Handbook of GaN Semiconductor Materials and Devices,CRC Press,Taylor&Francis,ISBN:978-1-4987-4713-4.Chapter 11,2017. 教学与课程 浙江大学: 模数混合与功率集成 本科生班主任 Semiconductor Material and Device Characterization 研究生培养: 2019刘银象(国家奖学金、王国松奖学金),韩绍文(国家奖学金),李少成(三菱电机奖学金) 2018韩绍文(台达奖学金) Instructor at HKUST: Summer 2015 ELEC1100 Introduction to Electro-Robot Design Fall 2015 ELEC2400 Electronic Circuits

研究领域

电力电子器件

近期论文

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期刊论文(*通讯作者) 1.(invited)S.Yang*,S.Han,K.Sheng,and K.J.Chen,“Dynamic on-resistance in GaN power devices:Mechanisms,characterizations and modeling,”IEEE J.Emerg.Sel.Topics Power Electron.,vol.7,no.3,pp.1425-1439,Sep.2019. 2.S.Han,S.Yang*,and K.Sheng,“Fluorine-implanted termination for vertical GaN Schottky rectifier with high blocking voltage and low forward voltage drop,”IEEE Electron Device Lett.,vol.40,no.7,pp.1040–1043,Jul.2019. 3.S.Han,S.Yang*,R.Li,X.Wu,and K.Sheng,“Current-collapse-free and fast reverse recovery performance in vertical GaN-on-GaN Schottky barrier diode,”IEEE Trans.Power Electron.,vol.36,no.6,pp.5012–5018,Jun.2019.(Featured inCompound Semiconductorand Semiconductor Today) 4.Y.Liu,S.Yang*,S.Han,and K.Sheng,“Investigation of surge current capability of GaN E-HEMTs in the third quadrant:the impact of p-GaN contact,”IEEE J.Emerg.Sel.Topics Power Electron.,vol.7,no.3,pp.1465-1474,Sep.2019. 5.(invited feature article)S.Yang*,et al.,“Obliterating dynamic on-resistance degradation,”Compound Semiconductor Magazine,pp.56–60,Mar.2019. 6.R.Li,X.Wu,S.Yang,and K.Sheng,“Dynamic on-state resistance test and evaluation of GaN power devices under hard and soft switching conditions by double and multiple pulses,”IEEE Trans.Power Electron.,vol.34,no.2,pp.1044–1053,Feb.2019.(Highlighted Paper) 7.H.Wang,J.Wang,L.Liu,N.Ren,J.Wu,C.Wang,S.Yang,and K.Sheng,“Design and characterization of area-efficient trench termination for 4H-SiC devices,”IEEE J.Emerg.Sel.Topics Power Electron.,vol.7,no.3,pp.1519-1526,Sep.2019. 8.S.Han,S.Yang*,and K.Sheng,“High-voltage and high-ION/OFF vertical GaN-on-GaN Schottky barrier diode with nitridation-based termination,”IEEE Electron Device Lett.,vol.39,no.4,pp.572–575,Apr.2018.(Featured inCompound Semiconductorand Semiconductor Today) 9.Z.Cao,Y.Zhu,Y.Liu,S.Dong,J.Zhao,Y.Wang,S.Yang*,and J.Fu*,“High-resolution separation of DNA/proteins through nanorod sieving matrix,”Biosensors and Bioelectronics,vol.137,pp.8–14,Jul.2019. 10.H.Zhang,J.Tu,S.Yang*,K.Sheng and P.Wang,“Optimization of gate geometry towards high-sensitivity AlGaN/GaN pH sensor,”Talanta,vol.205,no.1,Dec.2019.120134. 11.H.Wang,J.Wang,L.Liu,Y.Li,B.Wang,H.Xu,S.Yang,and K.Sheng,“Trench termination with SiO2-encapsulated dielectric for near-ideal breakdown voltage in 4H-SiC devices,”IEEE Electron Device Lett.,vol.39,no.12,pp.1900–1903,Dec.2018. 12.Y.Qiu,S.Yang,and K.Sheng,“Photolithographic patterning of cytop with limited contact angle degradation,”Micromachines,vol.9,no.10,p.509,Oct.2018. 13.(invited)H.Amano,et al.,'The 2018 GaN power electronics roadmap,'J.Phys.D:Appl.Phys.,vol.51,no.16,p.163001,Mar.2018.(ESI高被引论文) 14.S.Yang*,C.Zhou,S.Han,J.Wei,K.Sheng,and K.J.Chen,“Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices,”IEEE Trans.Electron Devices,vol.64,no.12,pp.5048–5056,Dec.2017. 15.(invited)S.Yang*,S.Liu,Y.Lu,and K.J.Chen,“Trapping mechanisms in insulated-gate GaN power devices:Understanding and characterization techniques,”Phys.Stat.Sol.(a),vol.214,no.3,pp.1600607-1–1600607-8,Mar.2017. 16.K.Sheng,S.Yang*,Q.Guo,and H.Xu,“Recent progress in SiC and GaN power devices,”ECS Trans.,vol.80,no.7,pp.37–51,July 2017. 17.J.Sun,G.Longobardi,F.Udrea,C.Zhu,G.Camuso,S.Yang,R.Garg,M.Imam,and A.Charles,“Substantiation of buried two dimensional hole gas(2DHG)existence in GaN-on-Si epitaxial heterostructure,”Appl.Phys.Lett.,vol.110,no.16,p.163506,Apr.2017. 18.S.Yang,Y.Lu,H.Wang,S.Liu,C.Liu,and K.J.Chen,“Dynamic gate stress-induced VTH shift and its impact on dynamic RON in GaN MIS-HEMTs,”IEEE Electron Device Lett.,vol.37,no.2,pp.157–160,Feb.2016. 19.(invited)S.Yang,S.Liu,C.Liu,M.Hua,and K.J.Chen,“Gate stack engineering for GaN lateral power transistors,”Semicond.Sci.and Technol.,vol.31,no.2,pp.024001-1–024001-10,Feb.2016. 20.S.Yang,S.Liu,Y.Lu,C.Liu,and K.J.Chen,“AC-capacitance techniques for interface trap analysis in GaN-based buried-channel MIS-HEMTs,”IEEE Trans.Electron Devices,vol.62,no.6,pp.1870–1878,June 2015. 21.S.Yang,S.Liu,C.Liu,Y.Lu,and K.J.Chen,“Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors,”Appl.Phys.Lett.,vol.105,no.22,pp.223508-1–223508-4,Dec.2014. 22.S.Yang,C.Zhou,Q.Jiang,J.Lu,B.Huang,and K.J.Chen,“Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating effects,”Appl.Phys.Lett.,vol.104,no.1,pp.013504-1–013504-4,Jan.2014. 23.S.Yang,Q.Jiang,B.Li,Z.Tang,and K.J.Chen,“GaN-to-Si vertical conduction mechanisms in AlGaN/GaN-on-Si lateral heterojunction FET structures,”Phys.Stat.Sol.(c),vol.11,no.3–4,pp.949–952,Mar.2014. 24.S.Yang,Z.Tang,K.Wong,Y.Lin,C.Liu,Y.Lu,S.Huang,and K.J.Chen,“High-quality interface in Al2O3/GaN/AlGaN/GaN MIS-structures with in situ pre-gate plasma nitridation,”IEEE Electron Device Lett.,vol.34,no.12,pp.1497–1499,Dec.2013.(ESI高被引论文) 25.S.Yang,S.Huang,M.Schnee,Q.-T.Zhao,J.Schubert,and K.J.Chen,“Fabrication and characterization of enhancement-mode high-κLaLuO3-AlGaN/GaN MIS-HEMTs,”IEEE Trans.Electron Devices,vol.60,no.10,pp.3040–3046,Oct.2013. 26.S.Yang,S.Huang,M.Schnee,Q.-T.Zhao,J.Schubert,and K.J.Chen,“Enhancement-mode LaLuO3-AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors using fluorine plasma ion implantation,”Jpn.J.Appl.Phys.,vol.52,no.8,pp.08JN02-1–08JN02-4,Aug.2013. 27.S.Yang,S.Huang,H.Chen,C.Zhou,Q.Zhou,M.Schnee,Q.-T.Zhao,J.Schubert,and K.J.Chen,“AlGaN/GaN MISHEMTs with high-κLaLuO3 gate dielectric,”IEEE Electron Device Lett.,vol.33,no.7,pp.979–981,July 2012. 28.S.Yang,S.Huang,H.Chen,M.Schnee,Q.-T.Zhao,J.Schubert,and K.J.Chen,“Characterization of high-κLaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition,”Appl.Phys.Lett.,vol.99,no.18,pp.182103-1–182103-3,Nov.2011. 29.(invited)K.J.Chen,S.Yang,et al.,“Toward reliable MIS-and MOS-gate structures for GaN lateral power devices,”Phys.Stat.Sol.(a),vol.213,no.4,pp.861–867,Apr.2016. 30.(invited,cover article)K.J.Chen,S.Yang,et al.,“Surface nitridation for improved dielectric/‌‌III-nitride interfaces in GaN MIS-HEMTs,”Phys.Stat.Sol.(a),vol.212,no.5,pp.1059–1065,May 2015. 31.C.Liu,S.Yang,S.Liu,Z.Tang,H.Wang,Q.Jiang,and K.J.Chen,“Thermally stable enhancement-mode GaN MIS-HEMT with partially recessed fluorine-implanted barrier,”IEEE Electron Device Lett.,vol.36,no.4,pp.318–320,Apr.2015. 32.S.Liu,S.Yang,Z.Tang,Q.Jiang,C.Liu,M.Wang,B.Shen,and K.J.Chen,“Interface/border trap characterization of Al2O3/AlN/GaN MOS structures with an AlN interfacial layer,”Appl.Phys.Lett.,vol.106,no.5,pp.051605-1–051605-4,Mar.2015. 33.S.Liu,S.Yang,Z.Tang,Q.Jiang,C.Liu,M.Wang,and K.J.Chen,“Al2O3/AlN/GaN MOS-channel HEMTs with an AlN interfacial layer,”IEEE Electron Device Lett.,vol.35,no.7,pp.723–725,July 2014. 34.Q.Zhou,S.Yang,W.Chen,B.Zhang,Z.Feng,S.Cai,and K.J.Chen,“High voltage InAlN/GaN HEMTs with nonalloyed source/drain for RF power applications,”Solid-State Electronics,vol.91,pp.19–23,Jan.2014. 35.Y.Lu,S.Yang,Q.Jiang,Z.Tang,and K.J.Chen,“Characterization of VT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs,”Phys.Stat.Sol.(c),vol.10,no.11,pp.1397-1400,Nov.2013. 36.S.Huang,S.Yang,J.Roberts and K.J.Chen,'Characterization of Vth-instability in Al2O3/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement,'Phys.Stat.Sol.(c),vol.9,no.3–4,pp.923–926,Mar.2012. 37.S.Huang,S.Yang,J.Roberts,and K.J.Chen,“Threshold voltage instability in Al2O3/GaN/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors,”Jpn.J.Appl.Phys.,vol.50,no.11,p.110202,Nov.2011. 38.M.Hua,C.Liu,S.Yang,S.Liu,K.Fu,Z.Dong,Y.Cai,B.Zhang,and K.J.Chen,“Characterization of leakage and reliability of SiNx gate dielectric by low pressure chemical vapor deposition for GaN based MIS-HEMTs,”IEEE Trans.Electron Devices,vol.62,no.10,pp.3215–3222,Oct.2015. 39.M.Hua,C.Liu,S.Yang,S.Liu,K.Fu,Z.Dong,Y.Cai,B.Zhang,and K.J.Chen,“GaN-based MIS-HEMTs using LPCVD-SiNx as gate dielectric,”IEEE Electron Device Lett.,vol.36,no.5,pp.448–450,May 2015. 40.S.Huang,Q.Jiang,S.Yang,Z.Tang,and K.J.Chen,“Mechanism of PEALD-grown AlN passivation for AlGaN/GaN HEMTs:compensation of interface traps by polarization charges,”IEEE Electron Device Lett.,vol.34,no.2,pp.193–195,Feb.2013. 41.S.Huang,Q.Jiang,S.Yang,C.Zhou,and K.J.Chen,“Effective passivation of AlGaN/GaN HEMTs by ALD-grown AlN thin film,”IEEE Electron Device Lett.,vol.33,no.4,pp.516–518,Apr.2012.(ESI高被引论文) 42.Y.Lu,Q.Jiang,Z.Tang,S.Yang,C.Liu,and K.J.Chen,“Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition,”Appl.Phys.Express,vol.8,no.6,pp.064101-1–064101-4,May 2015. 43.Q.Jiang,Z.Tang,C.Zhou,S.Yang,and K.J.Chen,“Substrate-coupled cross-talk effects on an AlGaN/GaN-on-Si smart power IC platform,”IEEE Trans.Electron Devices,vol.61,no.11,pp.3808–3813,Nov.2014. 44.Y.Lu,B.Li,X.Tang,Q.Jiang,S.Yang,Z.Tang,and K.J.Chen,“Normally-off Al2O3-AlGaN/GaN MIS-HEMT with transparent gate electrode for gate degradation investigation,”IEEE Trans.Electron Devices,vol.62,no.3,pp.821–827,Mar.2015. 45.Z.Tang,Q.Jiang,Y.Lu,S.Huang,S.Yang,X.Tang,and K.J.Chen,“600-V normally off SiNx/AlGaN/GaN MIS-HEMT with large gate swing and low current collapse,”IEEE Electron Device Lett.,vol.34,no.11,pp.1373–1375,Nov.2013.(ESI高被引论文) 46.S.Huang,K.Wei,Z.Tang,S.Yang,C.Liu,L.Guo,B.Shen,J.Zhang,X.Kong,G.Liu,Y.Zheng,X.Liu,and K.J.Chen,“Effects on interface oxidation on the transport behavior of the two-dimensional-electron-gas heterostructures by plasma-enhanced-atomic-layer deposited AlN passivation,”J.Appl.Phys.,vol.114,no.14,pp.144509-1–144509-6,Oct.2013. 47.S.Huang,K.Wei,G.Liu,Y.Zheng,L.Pang,X.Kong,X.Liu,Z.Tang,S.Yang,Q.Jiang,and K.J.Chen,“High-fMAX high Johnson’s figure-of-merit 0.2-μm gate AlGaN/GaN HEMTs on silicon substrate with AlN passivation,”IEEE Electron Device Lett.,vol.35,no.3,pp.315–317,Mar.2014. 会议论文 48.S.Yang*,S.Han,R.Li,and K.Sheng,“1 kV/1.3 mΩ·cm2 vertical GaN-on-GaN Schottky barrier diodes with high switching performance,”30th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Chicago,USA,May 13-17,2018.(IEEE ISPSD Charitat Young Researcher Award) 49.S.Han,S.Yang*,Y.Li,Y.Liu,and K.Sheng,“Photon-enhanced conductivity modulation and surge current capability in vertical GaN power rectifiers,”31st Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Shanghai,China,May 19-23,2019.(oral presentation,acceptance rate~15%) 50.Y.Liu,S.Han,S.Yang*,and K.Sheng,“Surge current capability of GaN E-HEMT in reverse conduction mode,”31st Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Shanghai,China,May 19-23,2019. 51.(invited)S.Yang*,“GaN power electronics:From lateral to vertical,”2018 Conference on Optoelectronic and Microelectronic Materials and Devices(COMMAD),Perth,Australia,Dec.9-13,2018. 52.G.Longobardi,S.Yang,et al.,“Concept to suppress the vertical leakage current in GaN-on-Si HEMT transistors,”Int.Workshop on Nitride Semiconductors(IWN2018),Kanazawa,Japan,Nov.11-16,2018.(oral presentation) 53.H.Zhang,S.Yang*,and K.Sheng,“GaN-on-Si lateral power devices with symmetric vertical leakage:The impact of floating substrate,”30th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Chicago,USA,May 13-17,2018.(oral presentation) 54.J.Sun,H.Xu,S.Yang,and K.Sheng,'Electrical characterization of 1.2kV SiC MOSFET at extremely high junction temperature,”30th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Chicago,USA,May 13-17,2018. 55.H.Xu,J.Sun,J.Wu,H.Wang,S.Yang,and K.Sheng,'Surge capability of 1.2kV SiC diode fabricated with high temperature implantation,”30th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Chicago,USA,May 13-17,2018. 56.B.Wang,H.Wang,X.Zhong,S.Yang,Q.Guo,and K.Sheng,'Characterization of 1.2kV SiC super-junction SBD implemented by trench and implantation technique,'30th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Chicago,USA,May 13-17,2018. 57.Y.Liu,S.Han,S.Yang*,and K.Sheng,“Design of fluorine-ion-based junction termination extension for vertical GaN Schottky rectifier,”2018 IEEE International Power Electronics and Application Conference and Exposition(PEAC),Shenzhen,China,Nov.4-7,2018. 58.S.Yang,et al.,“Buffer trapping-induced RON degradation in GaN-on-Si power transistors:Role of electron injection from Si substrate,”29th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Sapporo,Japan,May 28-June 1,2017.(oral presentation) 59.W.Zhou,S.Yang,X.Wu,and K.Sheng,“Optimization of SiC MOSFETs for 20kW DC/DC converter,”29th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Sapporo,Japan,May 28-June 1,2017. 60.G.Longobardi,S.Yang,et al.,“On the vertical leakage of GaN-on-Si lateral transistors and the effect of emission and trap-assisted-tunneling through the AlN/Si barrier,”29th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Sapporo,Japan,May 28-June 1,2017. 61.J.Sun,H.Xu,X.Wu,S.Yang,Q.Guo,and K.Sheng,“Short Circuit Capability and High Temperature Channel Mobility of SiC MOSFETs,”29th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Sapporo,Japan,May 28-June 1,2017. 62.(invited)S.Yang,“Buffer induced challenges in GaN-on-Si power devices,”Int.Forum on Wide Bandgap Semiconductors(IFWS),Beijing,China,Nov.15-17,2016. 63.(invited)S.Yang,et al.,“Performance enhancement and characterization techniques for GaN power devices,”43rd Int.Symp.on Compound Semiconductors(ISCS),Toyama,Japan,June 26-30,2016. 64.S.Yang,et al.,“Impact of VTH shift on RON in E/D-mode GaN-on-Si power transistors:Role of dynamic stress and gate overdrive,”28th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Prague,Czech Republic,June 12-16,2016.(oral presentation) 65.(invited)S.Yang,et al.,“Nitridation interfacial-layer technology for enhanced stability in GaN-based power devices,”2015 IEEE International Symposium on Radio-Frequency Integration 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MIS-HEMT,”Int.Workshop on Nitride Semiconductors(IWN2014),Warsaw,Poland,Aug.24-29,2014. 75.S.Liu,S.Yang,et al.,“High-performance gate-recessed normally-off GaN MIS-HEMTs with thin barrier layer,”11th Int.Conf.on Nitride Semiconductors(ICNS-11),Beijing,China,Aug.30-Sep.4,2015. 76.S.Liu,S.Yang,et al.,“Interface characterization of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an AlN interfacial layer,”Int.Workshop on Nitride Semiconductors(IWN2014),Warsaw,Poland,Aug.24-29,2014.(oral presentation) 77.S.Liu,S.Yang,et al.,“Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer,”26th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Hawaii,USA,June 15-19,2014.(oral presentation) 78.Y.Lu,S.Yang,et al.,“Characterization of VT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs,”40th Int.Symp.on Compound Semiconductors(ISCS),Kobe,Japan,May 19-23,2013.(oral presentation) 79.S.Huang,S.Yang,et al.,“Characterization of Vth-instability in Al2O3/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement,”9th Int.Conf.on Nitride Semiconductors(ICNS-9),Glasgow,UK,July 10-15,2011.(oral presentation) 80.M.Hua,C.Liu,S.Yang,et al.,“Gate leakage and time-dependent dielectric breakdown characteristics of LPCVD-SiNx/AlGaN/GaN MIS-HEMTs,”11th Int.Conf.on Nitride Semiconductors(ICNS-11),Beijing,China,Aug.30-Sep.4,2015.(oral presentation) 81.C.Liu,H.Wang,S.Yang,et al.,“Improved thermal stabilities in normally-off GaN MIS-HEMTs,”Int.Conf.on Compound Semiconductor Manufacturing Technology(CS-ManTech),Arizona,USA,May 18-21,2015.(oral presentation) 82.M.Hua,C.Liu,S.Yang,et al.,“650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric,”27th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Hong Kong,May 10-14,2015. 83.C.Liu,H.Wang,S.Yang,et al.,“Normally-off GaN MIS-HEMT with improved thermal stability in DC and dynamic performance,”27th Int.Symp.on Power Semiconductor Devices and ICs(ISPSD),Hong Kong,May 10-14,2015. 84.S.Huang,Q.Jiang,S.Yang,et al.,“Mechanism of PEALD-grown AlN passivation of AlGaN/GaN HEMTs,”Int.Workshop on Nitride Semiconductors(IWN2012),Sapporo,Japan,Oct.14-19,2012.(oral presentation) 85.Z.Tang,Q.Jiang,S.Huang,Y.Lu,S.Yang,et al.,“Monolithically integrated 600-V E/D-Mode SiNx/AlGaN/GaN MIS-HEMTs and their applications in low-standby-power start-up circuit for switched-mode power supplies,”2013 IEEE International Electron Devices Meeting(IEDM'13),Washington DC,USA,Dec.9-11,2013.(oral presentation) 86.S.Huang,Q.Jiang,K.Wei,G.Liu,J.Zhang,X.Wang,Y.Zheng,B.Sun,C,Zhao,H.Liu,Z.Jin,X.Liu,H.Wang,S.Liu,Y.Lu,C.Liu,S.Yang,et al.,“High-temperature low-damage gate recess technique and ozone-assisted ALD-grown Al2O3 gate dielectric for high-performance normally-off GaN MIS-HEMTs,”2014 IEEE International Electron Devices Meeting(IEDM'14),San Francisco,USA,Dec.15-17,2014.(oral presentation)

学术兼职

IEEE Open Journal of Power Electronics编委(Associate Editor); IEEE Journal of Emerging and Selected Topics in Power Electronics客座编委(Guest Associate Editor); 中国电源学会女科学家工作委员会副主任委员,元器件专委会委员; IEEE ISPSD’2020、IEEE ISPSD’2019、IEEE PEAC’2018技术委员会成员(Technical Program Committee Member); IEEE ISPSD’2019、IEEE WiPDA Asia’2018组委会成员(Organizing Committee Member); IEEE高级会员; IEEE EDL、IEEE T-ED、IEEE T-PEL、IEEE T-IE、IEEE JESTPE、APL等国际期刊审稿人,被IEEE EDL(2015-2017, 2019)和IEEE T-ED(2014-2019)评为金牌审稿人。

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