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1.Hanyuan Zhang,Jiawei Tu,Shu Yang,Kuang Sheng,and Ping Wang,'Optimization of Gate Geometry Towards High-Sensitivity AlGaN/GaN pH Sensor,'Talanta,vol.205,pp.120134-120134,2019,doi:10.1016/j.talanta.2019.120134.
2.Shu Yang,Shaowen Han,Kuang Sheng,and Kevin J.Chen,'Dynamic On-Resistance in GaN Power Devices:Mechanisms,Characterizations,and Modeling,'IEEE Journal of Emerging and Selected Topics in Power Electronics,vol.7,no.3,pp.1425-1439,2019,doi:10.1109/jestpe.2019.2925117.
3.Jiupeng Wu,Na Ren,Hengyu Wang,and Kuang Sheng,'1.2-kV 4H-SiC Merged PiN Schottky Diode With Improved Surge Current Capability,'IEEE Journal of Emerging and Selected Topics in Power Electronics,vol.7,no.3,pp.1496-1504,2019,doi:10.1109/jestpe.2019.2921970.
4.Hengyu Wang,Jue Wang,Li Liu,Na Ren,Jiupeng Wu,Ce Wang,Shu Yang,and Kuang Sheng,'Design and Characterization of Area-Efficient Trench Termination for 4H-SiC Devices,'IEEE Journal of Emerging and Selected Topics in Power Electronics,vol.7,no.3,pp.1519-1526,2019,doi:10.1109/jestpe.2019.2920927.
5.Shuai Shao,Mingming Jiang,Weiwen Ye,Yucen Li,Junming Zhang,and Kuang Sheng,'Optimal Phase-Shift Control to Minimize Reactive Power for a Dual Active Bridge DC-DC Converter,'IEEE Transactions on Power Electronics,vol.34,no.10,pp.10193-10205,2019,doi:10.1109/tpel.2018.2890292.
6.Shuai Shao,Hui Chen,Xinke Wu,Junming Zhang,and Kuang Sheng,'Circulating Current and ZVS-on of a Dual Active Bridge DC-DC Converter:A Review,'IEEE Access,vol.7,pp.50561-50572,2019,doi:10.1109/access.2019.2911009.
7.Na Ren,Hao Hu,Xiaofeng Lyu,Jiupeng Wu,Hongyi Xu,Ruigang Li,Zheng Zuo,Kang Wang,and Kuang Sheng,'Investigation on Single Pulse Avalanche Failure of SiC MOSFET and Si IGBT,'Solid-State Electronics,vol.152,pp.33-40,2019,doi:10.1016/j.sse.2018.11.011.
8.Yinxiang Liu,Shu Yang,Shaowen Han,and Kuang Sheng,'Investigation of Surge Current Capability of GaN E-HEMTs in The Third Quadrant:The Impact of P-GaN Contact,'IEEE Journal of Emerging and Selected Topics in Power Electronics,vol.7,no.3,pp.1465-1474,2019,doi:10.1109/jestpe.2019.2917523.
9.Wei Li,Zengchao Chen,Junye Li,Kuang Sheng,and Jie Zhu,'Subcooled Flow Boiling on Hydrophilic and Super-Hydrophilic Surfaces in Microchannel Under Different Orientations,'International Journal of Heat and Mass Transfer,vol.129,pp.635-649,2019,doi:10.1016/j.ijheatmasstransfer.2018.10.003.
10.Rui Li,Xinke Wu,Shu Yang,and Kuang Sheng,'Dynamic ON-State Resistance Test and Evaluation of GaN Power Devices Under Hard-and Soft-Switching Conditions by Double and Multiple Pulses,'IEEE Transactions on Power Electronics,vol.34,no.2,pp.1044-1053,2019,doi:10.1109/tpel.2018.2844302.
11.Huan Li,Jue Wang,Na Ren,Hongyi Xu,and Kuang Sheng,'Investigation of 1200 V SiC MOSFETs'Surge Reliability,'Micromachines,vol.10,no.7,2019,doi:10.3390/mi10070485.
12.Mingchen Hou,Gang Xie,and Kuang Sheng,'Low Surface Damage During Ohmic Contact Formation in AlGaN/GaN HEMT By Selective Laser Annealing,'Electronics Letters,vol.55,no.11,pp.658-659,2019,doi:10.1049/el.2019.0549.
13.Mingchen Hou,Gang Xie,and Kuang Sheng,'Mechanism of Ti/Al/Ni/Au Ohmic Contacts to AlGaN/GaNHeterostructures via Laser Annealing,'Chinese Physics B,vol.28,no.3,2019,doi:10.1088/1674-1056/28/3/037302.
14.Shaowen Han,Shu Yang,and Kuang Sheng,'Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier With High Blocking Voltage and Low Forward Voltage Drop,'IEEE Electron Device Letters,vol.40,no.7,pp.1040-1043,2019,doi:10.1109/led.2019.2915578.
15.Shaowen Han,Shu Yang,Rui Li,Xinke Wu,and Kuang Sheng,'Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode,'IEEE Transactions on Power Electronics,vol.34,no.6,pp.5012-5018,2019,doi:10.1109/tpel.2018.2876444.
16.Zezheng Dong,Xinke Wu,and Kuang Sheng,'Suppressing Methods of Parasitic Capacitance Caused Interference in a SiC MOSFET Integrated Power Module,'IEEE Journal of Emerging and Selected Topics in Power Electronics,vol.7,no.2,pp.745-752,2019,doi:10.1109/jestpe.2019.2895607.
17.Xue-Qian Zhong,Jue Wang,Bao-Zhu Wang,Heng-Yu Wang,Qing Guo,and Kuang Sheng,'Investigations on Mesa Width Design for 4H-SiC Trench Super Junction Schottky Diodes,'Chinese Physics B,vol.27,no.8,2018,doi:10.1088/1674-1056/27/8/087102.
18.Xueqian Zhong,Baozhu Wang,Jue Wang,and Kuang Sheng,'Experimental Demonstration and Analysis of A 1.35kV 0.92mW·cm2 SiC Superjunction Schottky Diode,'IEEE Transactions on Electron Devices,vol.65,no.4,pp.1458-1465,2018,doi:10.1109/ted.2018.2809475.
19.Hanyuan Zhang,Shu Yang,and Kuang Sheng,'GaN-on-Si Lateral Power Devices with Symmetric Vertical Leakage:The Impact of Floating Substrate,'in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs,2018.
20.Shu Yang,Shaowen Han,Rui Li,and Kuang Sheng,'1 kV/1.3 mΩ·cm2 Vertical GaN-on-GaN Schottky Barrier Diodes with High Switching Performance,'in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs,2018.
21.Hongyi Xu,Jiahui Sun,Jingjing Cui,Jiupeng Wu,Hengyu Wang,Shu Yang,Na Ren,and Kuang Sheng,'Surge Capability of 1.2kV SiC Diodes with High-Temperature Implantation,'in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs,2018.
22.J ianwei Wen,Kuang Sheng,Junming Zhang,Shu Yang,and Wei Jiang,'A Wide Output LLC Converter Based on Full Bridge and Half Bridge Topology Morphing Method Using Trajectory Transition,'in 2018 IEEE Energy Conversion Congress and Exposition,2018.
23.Hengyu Wang,Jue Wang,Li Liu,Yucen Li,Baozhu Wang,Hongyi Xu,Shu Yang,and Kuang Sheng,'Trench Termination With SiO2-Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-SiC Devices,'IEEE Electron Device Letters,vol.39,no.12,pp.1900-1903,2018,doi:10.1109/led.2018.2874471.
24.Baozhu Wang,Hengyu Wang,Xueqian Zhong,Shu Yang,Qing Guo,and Kuang Sheng,'Characterization of 1.2 kV SiC Super-Junction SBD Implemented by Trench and Implantation Technique,'in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs,2018.
25.Yijun Sun,Zhiyuan Cheng,Kuang Sheng,Qiang Zhou,Ying Sun,Peng Chen,Ningze Zhuo,Haibo Wang,Xudong Yu,Michael Heuken,and Takashi Egawa,'Hydrogen induced quality improvement of GaNAs layers grown by chemical beam epitaxy,'Journal of Crystal Growth,vol.500,pp.11-14,2018,doi:10.1016/j.jcrysgro.2018.08.008.
26.Jiahui Sun,Hongyi Xu,Shu Yang,and Kuang Sheng,'Electrical Characterization of 1.2kV SiC MOSFET at Extremely High Junction Temperature,'in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs,2018.
27.Na Ren,Hao Hu,Kang L.Wang,Zheng Zuo,Ruigang Li,and Kuang Sheng,'Investigation on Single Pulse Avalanche Failure of 900V SiC MOSFETs,'in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs,2018.
28.Yalei Qiu,Shu Yang,and Kuang Sheng,'Photolithographic Patterning of Cytop with Limited Contact Angle Degradation,'Micromachines,vol.9,no.10,2018,doi:10.3390/mi9100509.
29.Yuxin Liu,Shaowen Han,Shu Yang,and Kuang Sheng,'Design of Fluorine-Ion-Based Junction Termination Extension for Vertical GaN Schottky Rectifier,'in 2018 IEEE International Power Electronics and Application Conference and Exposition,2018.
30.Rui Li,Xinke Wu,Gang Xie,and Kuang Sheng,'Dynamic On-state Resistance Evaluation of GaN Devices under Hard and Soft Switching Conditions,'in Thirty-Third Annual IEEE Applied Power Electronics Conference and Exposition,2018.
31.Mingchen Hou,Gang Xie,and Kuang Sheng,'Improved Device Performance in AlGaN/GaN HEMT by Forming Ohmic Contact With Laser Annealing,'IEEE Electron Device Letters,vol.39,no.8,pp.1137-1140,2018,doi:10.1109/led.2018.2844951.
32.Shaowen Han,Shu Yang,and Kuang Sheng,'High-Voltage and High-I-ON/I-OFF Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination,'IEEE Electron Device Letters,vol.39,no.4,pp.572-575,2018,doi:10.1109/led.2018.2808684.
33.Lu Gan,Haisheng Tao,Xianwen Kan,Qian Chen,Kuang Sheng,and Jie Wu,'Phosphorus-Doped Carbon Nanocages for Simultaneous Detection of Dopamine and Uric Acid,'Journal of Analytical Chemistry,vol.73,no.10,pp.978-985,2018,doi:10.1134/s1061934818100040.
34.Zezheng Dong,Xinke Wu,and Kuang Sheng,'Analysis of Gate Signal Interference in an Integrated SiC MOSFET Module,'in Thirty-Third Annual IEEE Applied Power Electronics Conference and Exposition,2018.
35.Zhen Zhang,Junming Zhang,Shuai Shao,Xinke Wu,and Kuang Sheng,'A Novel Fixed Off-Time Control Method for Single-Phase Micro-Inverter Without Sensing Inductor Current,'in 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia,2017.
36.Shu Yang,Chunhua Zhou,Shaowen Han,Jin Wei,Kuang Sheng,and Kevin J.Chen,'Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices,'IEEE Transactions on Electron Devices,vol.64,no.12,pp.5048-5056,2017,doi:10.1109/ted.2017.2764527.
37.Tao Wang,Wei Guo,Luowei Wen,Yan Liu,Bin Zhang,Kuang Sheng,and You Yin,'Ab initio Study of Tunable Band Gap of Monolayer and Bilayer Phosphorene by the Vertical Electronic Field,'Journal of Wuhan University of Technology-Materials Science Edition,vol.32,no.1,pp.213-216,2017,doi:10.1007/s11595-017-1582-1.
38.Tao Wang,Minyan Chen,Bowen Fan,Yan Liu,Kuang Sheng,You Yin,and Yiqun Xie,'First-Principles Calculation of Photocurrent in Monolayer Silicene Sheet Under Small Voltages,'Optics Communications,vol.395,pp.289-292,2017,doi:10.1016/j.optcom.2016.05.072.
39.Hengyu Wang,Ming Su,and Kuang Sheng,'Theoretical Performance Limit of the IGBT,'IEEE Transactions on Electron Devices,vol.64,no.10,pp.4184-4192,2017,doi:10.1109/ted.2017.2737021.
40.Kuang Sheng,Shu Yang,Qing Guo,and Hongyi Xu,'Recent Progress in SiC and GaN Power Devices,'in Gallium Nitride and Silicon Carbide Power Technologies 7,vol.80,ECS Transactions,no.7,2017,pp.37-51.
41.Na Ren,Kang L.Wang,Zheng Zuo,Ruigang Li,and Kuang Sheng,'A Novel 4H-SiC Pinched Barrier Rectifier,'in 2017 Thirty Second Annual IEEE Applied Power Electronics Conference and Exposition,2017.
42.Mingming Jiang,Shuai Shao,Kuang Sheng,and Junming Zhang,'A Capacitor Voltage Balancing Method for a Three Phase Modular Multilevel DC-DC Converter,'in 2017 IEEE Energy Conversion Congress and Exposition,2017.
43.Weicheng Zhou,Qing Guo,Xinke Wu,Yi Liu,and Kuang Sheng,'A 1200V/100A all-SiC Power Module for Boost Converter of EV/HEV's Motor Driver Application,'in 2016 13th China International Forum on Solid State Lighting:International Forum on Wide Bandgap Semiconductors China,2016.
44.X ueqian Zhong,Baozhu Wang,and Kuang Sheng,'Design and Experimental Demonstration of 1.35 kV SiC Super Junction Schottky Diode,'in 2016 28th International Symposium on Power Semiconductor Devices and ICs,2016.
45.Zhaohui Wang,Junming Zhang,Xinke Wu,and Kuang Sheng,'Evaluation of Reverse Recovery Characteristic of Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor Intrinsic Diode,'Iet Power Electronics,vol.9,no.5,pp.969-976,2016,doi:10.1049/iet-pel.2014.0965.
46.Zhaohui Wang,Junming Zhang,and Kuang Sheng,'An Isolated Bidirectional Modular Multilevel DC/DC Converter for Power Electronic Transformer Applications,'Journal of Power Electronics,vol.16,no.3,pp.861-871,2016,doi:10.6113/jpe.2016.16.3.861.
47.Yu-Fu Wang,Sheng-Kuang Peng,Po-Kong Huang,Horng-Long Chen,and Wei-Yang Choua,'Interface Engineering for Improving the Electrical Stability and Photoelectric Effects of Organic Memory Transistors,'in 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices,2016.
48.Junjun Wang,Lin Xu,Yang Lu,Kuang Sheng,Wei Liu,Cong Chen,Yang Li,Biao Dong,and Hongwei Song,'Engineered IrO2@NiO Core-Shell Nanowires for Sensitive Non-enzymatic Detection of Trace Glucose in Saliva,'Analytical Chemistry,vol.88,no.24,pp.12346-12353,2016,doi:10.1021/acs.analchem.6b03558.
49.Cen Tang,Xueyang Li,Mingchen Hou,Gang Xie,and Kuang Sheng,'Quasi-Bipolar Channel Modulation Instability Analysis for P-GaN gate High Electron Mobility Transistor,'in 2016 28th International Symposium on Power Semiconductor Devices and ICs,2016.
50.Jiahui Sun,Hongyi Xu,Xinke Wu,and Kuang Sheng,'Comparison and Analysis of Short Circuit Capability of 1200V Single-Chip SiC MOSFET and Si IGBT,'in 2016 13th China International Forum on Solid State Lighting:International Forum on Wide Bandgap Semiconductors China,2016.
51.Xueyang Li,Gang Xie,Cen Tang,and Kuang Sheng,'Charge trapping related channel modulation instability in P-GaN gate HEMTs,'Microelectronics Reliability,vol.65,pp.35-40,2016,doi:10.1016/j.microrel.2016.07.040.
52.Yandong Jiang,Dali Liu,Yudan Yang,Ru Xu,Tianxiang Zhang,Kuang Sheng,and Hongwei Song,'Photoelectrochemical detection of alpha-fetoprotein based on ZnO inverse opals structure electrodes modified by Ag2S nanoparticles,'Scientific Reports,vol.6,2016,doi:10.1038/srep38400.
53.Tianyang Jiang,Junming Zhang,Xinke Wu,Kuang Sheng,and Yousheng Wang,'A Bidirectional Three-Level LLC Resonant Converter With PWAM Control,'IEEE Transactions on Power Electronics,vol.31,no.3,pp.2213-2225,2016,doi:10.1109/tpel.2015.2438072.
54.Furong Jiang,Kuang Sheng,and Qing Guo,'Comparative Study of Temperature-Dependent Characteristics for SiC MOSFETs,'in 2016 13th China International Forum on Solid State Lighting:International Forum on Wide Bandgap Semiconductors China,2016.
55.Wen-Chiang Hong,Chieh-Jen Ku,Rui Li,Siamak Abbaslou,Pavel Reyes,Szu-Ying Wang,Guangyuan Li,Ming Lu,Kuang Sheng,and Yicheng Lu,'MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics,'Scientific Reports,vol.6,2016,doi:10.1038/srep34169.
56.Sizhe Chen,Ao Liu,Junwei He,Song Bai,and Kuang Sheng,'Design and Application of High-Voltage SiC JFET and Its Power Modules,'IEEE Journal of Emerging and Selected Topics in Power Electronics,vol.4,no.3,pp.780-789,2016,doi:10.1109/jestpe.2016.2562112.
57.Qiang Xiao,Yang Yan,Xinke Wu,Na Ren,and Kuang Sheng,'A 10kV/200A SiC MOSFET Module with Series-Parallel Hybrid Connection of 1200V/50A Dies,'in 2015 IEEE 27th International Symposium on Power Semiconductor Devices&ICs,2015.
58.Zhaohui Wang,Junming Zhang,and Kuang Sheng,'Modular Multilevel Power Electronic Transformer,'in 2015 9th International Conference on Power Electronics and ECCE Asia,2015.
59.Tao Wang,Yan Liu,Qing Guo,Bin Zhang,Kuang Sheng,Can Li,and You Yin,'Tunable Bandgap of Monolayer Black Phosphorus by Using Vertical Electric Field:A DFT Study,'Journal of the Korean Physical Society,vol.66,no.6,pp.1031-1034,2015,doi:10.3938/jkps.66.1031.
60.Cen Tang,Gang Xie,and Kuang Sheng,'Study of the Leakage Current Suppression for Hybrid-Schottky/Ohmic Drain AlGaN/GaN HEMT,'Microelectronics Reliability,vol.55,no.2,pp.347-351,2015,doi:10.1016/j.microrel.2014.10.018.
61.Cen Tang,Gang Xie,and Kuang Sheng,'Enhancement-mode GaN-on-Silicon MOS-HEMT Using Pure Wet Etch Technique,'in 2015 IEEE 27th International Symposium on Power Semiconductor Devices&ICs,2015.
62.Cen Tang,Mingchen Hou,Xueyang Li,Gang Xie,and Kuang Sheng,'CMOS-compatible Ehancement-mode GaN-on-Si MOS-HEMT with High Breakdown Voltage(930V)using Thermal Oxidation and TMAH Wet Etching,'in 2015 IEEE Energy Conversion Congress and Exposition,2015.
63.Qingling Li,Dali Liu,Lin Xu,Ruiqing Xing,Wei Liu,Kuang Sheng,and Hongwei Song,'Wire-in-Tube IrOx Architectures:Alternative Label-Free Immunosensor for Amperometric Immunoassay toward alpha-Fetoprotein,'Acs Applied Materials&Interfaces,vol.7,no.40,pp.22719-22726,2015,doi:10.1021/acsami.5b07895.
64.Can Li,Yan Liu,Bin Zhang,Tao Wang,Qing Guo,Kuang Sheng,and You Yin,'The Effect of h-BN Buffer Layers in Bilayer Graphene on Co(111),'Journal of the Korean Physical Society,vol.66,no.10,pp.1631-1636,2015,doi:10.3938/jkps.66.1631.
65.Can Li,Bowen Fan,Weiyi Li,Luowei Wen,Yan Liu,Tao Wang,Kuang Sheng,and You Yin,'Bandgap Engineering of Monolayer MoS2 Under Strain:A DFT Study,'Journal of the Korean Physical Society,vol.66,no.11,pp.1789-1793,2015,doi:10.3938/jkps.66.1789.
66.Tianyang Jiang,Junming Zhang,Xinke Wu,Kuang Sheng,and Yousheng Wang,'A Bidirectional LLC Resonant Converter With Automatic Forward and Backward Mode Transition,'IEEE Transactions on Power Electronics,vol.30,no.2,pp.757-770,2015,doi:10.1109/tpel.2014.2307329.
67.Zezheng Dong,Xinke Wu,Kuang Sheng,and Junming Zhang,'Impact of Common Source Inductance on Switching Loss of SiC MOSFET,'in 2015 IEEE 2nd International Future Energy Electronics Conference,2015.
68.Zheng Dong,Apu Kapadia,Jim Blythe,and L.Jean Camp,'Beyond the Lock Icon:Real-time Detection of Phishing Websites Using Public Key Certificates,'in 2015 Apwg Symposium on Electronic Crime Research,2015.
69.Sizhe Chen,Junwei He,Hengyu Wang,and Kuang Sheng,'Fabrication and Testing of 3500V/15A SiC JFET Based Power Module for High-Voltage,High-Frequency Applications,'in 2015 Thirtieth Annual IEEE Applied Power Electronics Conference and Exposition,2015.
70.Sizhe Chen,Junwei He,and Kuang Sheng,'High-Voltage Full-SiC Power Module:Device Fabrication,Testing and High Frequency Application in kW-level Converter,'in 2015 IEEE 27th International Symposium on Power Semiconductor Devices&ICs,2015.
71.Lijuan Long,Junming Zhang,and Kuang Sheng,'Analysis of the Root Mean Square Current of VIENNA Rectifier,'Power Electronics,vol.53,no.2,pp.8-11,2019.
72.Zhihong Liu,Yi Tang,and Kuang Sheng,'Latest Developments of Reverse-conducting IGBT,'in Chinese Society of Electrical Engineering,2019,2019.
73.Mingchen Hou,Gang Xie,and Kuang Sheng,'Mechanism of Ti/Al/Ni/Au Ohmic Contacts to AlGaN/GaN Heterostructures via Laser Annealing,'Chinese Physics.B,vol.28,no.3,2019.
74.Furong Jiang,Shu Yang,and Kuang Sheng,'Comparative Study on Temperature-dependent Characteristic Parameters of SiC MOSFET,'Journal of Power Supply,vol.16,no.6,pp.143-151,2018.
75.Zezheng Dong,Xinke Wu,and Kuang Sheng,'Switching Losses Model of SiC MOSFET,'Power Electronics,vol.52,no.8,pp.31-33,85,2018.
76.Liumin Wang,Rui Jin,Gang Xie,Jiahong Yu,and Kuang Sheng,'Design of 3 300 V Soft Punch Through Fast IGBT Based on Application of High Voltage and High Current Modules STBZ,'Research&Progress of Solid State Electronics,vol.37,no.1,pp.45-51,2017.
77.Jiahong Yu,Hanyue Li,Gang Xie,Liumin Wang,Rui Jin,and Kuang Sheng,'A Novel Structure of Anode-Shorted IGBT with p-Barrier Layer,'Semiconductor Technology,vol.41,no.9,pp.679-683,2016.
78.Yang Yan,Xinke Wu,and Kuang Sheng,'99.2%Efficiency ZVS Single-phase PFC Rectifier with SiC MOSFET,'Journal of Power Supply,vol.14,no.4,pp.73-81,2016.
79.Liumin Wang,Rui Jin,Xiaoyi Xu,Gang Xie,and Kuang Sheng,'Structure of 3D Shorted-Anode LIGBT with the p-Pillar,'Semiconductor Technology,vol.41,no.4,pp.280-285,2016.
80.Kuang Sheng,Qing Guo,Kunshan Yu,and Xiaowei Ding,'Medium and low voltage SiC materials,power devices and demonstration in electric vehicle charging equipment,'Journal of Zhejiang University.Sciences Edition,vol.43,no.6,pp.631-634,637,2016.
81.Zezheng Dong,Xinke Wu,Kuang Sheng,and Junming Zhang,'Impact of Common Source Inductance on Switching Loss of SiC MOSFET,'Journal of Power Supply,vol.14,no.4,pp.112-118,2016.
82.Na Ren and Kuang Sheng,'2.5 mW·cm2,1 750 V 4H-SiC Junction Barrier Schottky Diodes With Floating Guard Ring Termination Structure,'in Chinese Society of Electrical Engineering,2015,2015.
83.Junwei He,Sizhe Chen,Na Ren,Song Bai,Yonghong Tao,Ao Liu,and Kuang Sheng,'Fabrication and Testing of 4 500 V SiC SBD and JFET Power Modules,'Transactions of China Electrotechnical Society,vol.30,no.17,pp.63-69,2015.
84.Sizhe Chen and Kuang Sheng,'4 700V SiC PiN Rectifier,'Transactions of China Electrotechnical Society,vol.30,no.22,pp.57-61,2015.