盛况 - 浙江大学 - 电气工程学院

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浙江大学电气工程学院
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盛况，浙江大学求是特聘教授，博士生导师。 1995年获浙江大学电力电子技术学士，1999年获英国赫瑞瓦特大学电子及计算机工程博士，1999-2002年任英国剑桥大学博士后，2008年获美国Rugters大学终身教职；2009年至今任浙江大学电气工程学院教授、博导，2017年起至今任浙江大学电气工程学院院长。长期从事硅基和宽禁带电力电子芯片、封装及应用研究，包括芯片设计与工艺、器件封装与测试以及在智能电网、轨道交通、新能源汽车、工业电机、各类电源等领域中的应用，2009年回国创建浙江大学电力电子器件实验室（Power Electronic Device Lab,PEDL），是国内较早开展碳化硅和氮化镓电力电子器件研发的团队。团队承担了电力电子器件及应用领域的多个国家级、省部级和横向合作项目，包括国家重大科技专项、国家863主题项目及课题、国家重点研发计划项目及课题、自然科学基金委杰出青年基金、自然科学基金委重点项目等十余项，在器件理论、芯片研制、器件封测和应用方面取得了一些成果，包括最早报道了碳化硅（SiC）功率集成芯片、在国内较早自主研制出了系列SiC芯片和模块（600V~6000V/最高300A，SBD、JBS、MPS、JFET、MOSFET）、提出沟槽型超级结SiC肖特基二极管设计方法并报道了1300V（不包括衬底0.36 mΩ•cm2，品质因子FOM达国际前列）SiC超级结二极管、提出新型垂直型氮化镓晶体管结构并报道了FOM处国际前列的芯片、基于新型单驱动方法的10kV/200A碳化硅MOSFET多芯片串-并联模块、首款10kVA基于全碳化硅器件的高压电力电子变压器、合作开发了高压大容量硅基IGBT芯片等。团队也和国内外著名企业开展合作推进成果的产业化，合作企业包括国家电网、中车、中电集团、华为、华润微电子、台达、德国英飞凌、美国福特等公司，实现了碳化硅和硅基电力电子芯片的产业化。相关的成果在国际顶级学术期刊及会议发表论文270余篇，引用次数2700次以上，获授权专利20余项（40余项申请中），2010年获浙江省自然科学二等奖，2019年获国家技术发明二等奖。主要荣誉： 2009年，获国家教育部长江学者 2012年，获国家杰出青年科学基金资助 2013年，获中组部“万人计划”科技创新领军人才 2014年，获中国侨界贡献奖（创新人才）主要奖项： 2010年，浙江省自然科学二等奖 2019年，国家技术发明二等奖（排二）实验室介绍关于实验室 PEDL全称“Power Electronic Device Laboratory”，即电力电子器件实验室，研究领域为宽禁带半导体功率器件及其应用，主要包括宽禁带半导体功率芯片、先进封装及器件各领域的应用等三个方向。实验室依托电力电子国家工程中心，拥有较为完备和先进的芯片、封装和应用三个方面的研发设施和研发能力。教师队伍实验室拥有强大的教师阵容，现有教授3位：分别为盛况（实验室负责人，博士生导师，现任浙江大学电气工程学院院长，国家杰出青年基金获得者/长江学者/中组部万人计划获得者/求是特聘教授），张军明（博士、博士生导师，现任浙江大学电气工程学院院长助理）、吴新科（博士、博士生导师、优秀青年基金获得者），研究员1位：杨树（博士、博士生导师），副教授2位：汪涛副教授（博士）、郭清副教授（博士，浙江大学求是青年学者），特聘副研究员1位：任娜（博士、博士生导师），讲师1位：邵帅（博士）。此外，还包括一名外籍求是讲座教授（兼职），Barry Williams教授。团队治学严谨、氛围融洽，曾入选浙江大学“电力电子器件及技术科技创新团队”和“浙江省新能源用电力电子技术科技创新团队”。人才培养在人才培养方面，实验室的导师组具有丰富的国内外教学研究经历（4位拥有国外高校博士学位，两位曾在国外知名高校任教）以及多年的产业界项目合作经验。团队由导师组在电力电子器件及应用的学术前沿和工程应用各方向进行科研指导，团队大力鼓励并资助团队学生参加高水平的国际学术交流，并引领学生深入本领域各龙头企业进行前沿开发及联合培养，在提升学术水平的同时充分培养学生的国际视野及工程能力。团队拥有宽禁带功率器件及应用领域较为完备和先进的实验设施，是该领域国际上和国内知名的实验室，近年来承担的国家863和重点研发计划项目多达10余项、国家重大专项课题1项、国家自然科学基金重点／面上／青年项目等7项、教育部项目1项以及其他国内外企业合作项目近20项。在这项设施和项目的支持下，PEDL实验室有三十多名优秀的博士生、硕士生和本科生，他们来自海内外和全国各地，是实验室最主要也是最有活力的成员。实验设施在实验设施方面，实验室拥有较为完备和先进的电力电子器件及应用研究所需的软硬件设施，包括：1、芯片工艺线：实验室拥有国内高校唯一一条专用于宽禁带功率器件研制的超净工艺线。该超净工艺线投资3000余万元，占地面积近1000平方米，具备近乎完整的宽禁带功率器件工艺设备设施，大型设备包括光刻、PECVD、ICP、磁控溅射、高温退火、SEM等；2、封测工艺线：实验室累计投入1000余万元，建成了国内先进的宽禁带器件封装、测试和可靠性实验室，封测实验室拥有芯片划片系统、真空焊接系统、铝线键合系统、芯片封装在片监测系统；测试实验室拥有国内较为领先的半自动和手动探针台（具有多台、高压、大电流、高温等测试能力），性能领先的电力电子器件参数测试系统、动静态测试系统、C-V测试、超低温测试能力；3、可靠性评估：可靠性实验室具有高加速寿命测试系统、温度盐雾测试系统、常规与加速功率循环测试系统、红外温度测试系统等全套的器件老化测试装置；4、仿真设计软件：实验室拥有成套的功率半导体芯片、封装、应用仿真设计软件；5、应用平台：依托电力电子应用国家工程中心，实验室拥有国内较为领先的电力电子应用技术支撑，包括电动汽车应用试验平台、直流配电应用试验平台、光伏并网试验平台、数据中心电源管理试验平台等，为宽禁带功率芯片和模块的应用验证提供了良好的应用条件。科学研究在科学研究方面，实验室自主研制出了600V~6000V肖特基二极管（SBD、JBS、MPS）、1200V~4500V结型场效应晶体管（JFET）和1200V～3300V金属氧化物场效应晶体管（MOSFET）芯片，开发出了国内容量领先的4500V/100A碳化硅肖特基二极管模块、4500V/50A的碳化硅结型场效应开关管模块和1200V/300A的碳化硅MOSFET功率模块，团队提出了一种新型的超级结碳化硅肖特基二极管设计方法，研发出了出了1300V、比导通电阻0.92mΩ•cm2（不包括衬底0.36 mΩ•cm2）SiC器件，打破了SiC器件的理论极限。PEDL团队还开发出了国内首款10kVA基于全碳化硅器件的高压电力电子变压器，提出了高频多谐振DC-DC变流器同步整流的可靠驱动方法、降压型功率因数校正方法和新型单驱动的碳化硅MOSFET多芯片串-并联方法，在碳化硅和氮化镓电力电子拓扑方向开展了较为全面的研究。工程应用在工程应用方面，PEDL团队通过与国家电网公司、中国中车、华润微电子、福特汽车、英飞特电子、台达等国内外著名企业合作，进行了高压大容量碳化硅和氮化镓电力电子器件、智能电网核心电力电子装备、LED驱动、高效电源、电动汽车用电机驱动和充电桩等关键技术的开发。目前团队已经建立了适用于新型电力电子芯片设计、封装与应用的核心知识产权，为打破国际上对我国的技术垄断、建立我国独立自主的宽禁带电力电子器件及应用的技术和产业打下良好的基础。2016年，团队实现专利技术转让4项，总转让费用超过200万元。团队建设在团队建设方面，团队导师支持并亲自出资举办团队文体活动，近年来，实验室团队活动纷呈、内外兼修，既可修身养性（如茶道、沙盘模拟、潜意识投射卡分析等），又可强身健体（如皮划艇、滑冰、羽毛球赛等）。于是，你既可能会闻见超净光刻间烘焙的一枚枚高压功率器件蒸腾着的期许满怀，也可能闻见专业茶道师沏开的一排排上好西湖龙井奔放着的热情洋溢；既可能望见三五成群的师兄弟兴致盎然地一道奔赴往苏杭高铁，抑或是望见一二十艘的双人艇气势磅礴地一同驰骋在京杭运河。甚至，即便是内容高深的组会报告或会后研讨，也不时由导师组带领在一间优雅别致的西餐厅或日料店举行。在这里，你能收获的不仅是专业知识或学术能力，还有一组平易近人、和蔼可亲的老师，以及一群志同道合、拼搏进取的同期好友。教学与课程教学与课程：承担了1门全英文博士生课程、1门本科生课程，参与1门本科生课程，课程收到学生的一致好评。 1、《新型电力电子器件前沿》（全英文授课）本课程主要介绍功率器件的发展概况、发展趋势、技术动向和最新的应用领域等新的前沿信息。课程内容将包括在以下几个不同方面的发展：新的器件结构，新材料，新工艺半导体技术。新器件结构将涵盖超级结结构、横向多RESURF结构；新材料将覆盖碳化硅和氮化镓。在碳化硅器件方面，本课程将介绍碳化硅二极管、BJT、JFET、MOSFET、晶体管和IGBT等。氮化镓器件将重点介绍HEMFET，MOSFET和二极管。每个器件的运行机制、器件结构、加工工艺、现有的挑战和未来发展趋势将在课程中进行介绍和讨论。本课程的一个重要组成部分，是培养学生搜集新研究课题最新文献的能力，阅读和掌握基本概念。演示汇报将在本课程占有相当的比例，这也将提高学生的演示报告能力和团队合作能力。 2、《电力电子器件》电力电子器件是电子信息工程专业的一门重要的专业基础课程，本课程系统而全面介绍电力电子器件工作原理、特性及应用特性，主要内容有：一、半导体物理基础；二、功率晶体管（GTR、MOSFET）原理及应用；三、绝缘栅门极双极晶体管（IGBT）原理及应用；四、晶闸管原理及应用，五、新型半导体材料功率器件。 3、《电子信息新技术讲座》聘请工业界或具有工程实践经历的专家，向高年级本科学生及研究生介绍电子信息、电力电子、集成电路等有关学科，在工业应用中的一些新的需求，新技术以及发展趋势。使得同学对本专业所学知识、实际应用场合及其发展趋势有较为清晰的了解。研究与成果科研平台实验室依托电力电子国家工程中心，成立了国家工程中心器件分中心，创建了浙江大学苏州工业技术研究院电力电子器件研发中心和浙江大学绍兴微电子研究中心功率器件创新中心，拥有较为完备和先进的电力电子器件及应用研究所需的软硬件设施，包括芯片工艺、封装测试、可靠性评估、仿真设计和应用几个方面：芯片工艺实验室拥有国内高校唯一一条专用于宽禁带功率器件研制的超净工艺线。该超净工艺线占地面积近1000平方米，具备近乎完整的宽禁功率器件工艺设备设施，大型设备包括光刻、PECVD、ICP、磁控溅射、高温退火、SEM等；封装测试实验室建成了国内先进的宽禁带器件封装、测试和可靠性实验室，封测实验室拥有芯片划片系统、真空焊接系统、铝线键合系统、芯片封装在片监测系统；测试实验室拥有国内较为领先的半自动和手动探针台（具有多台、高压、大电流、高温等测试能力），性能领先的电力电器件参数测试系统、动静态测试系统、C-V测试、超低温测试能力；可靠性评估可靠性实验室具有高加速寿命测试系统、温度盐雾测试系统、常规与加速功率循环测试系统、红外温度测试系统等全套的器件老化测试装置；仿真设计实验室拥有成套的功率半导体芯片、封装、应用仿真设计软件；应用平台依托电力电子应用国家工程中心，实验室拥有国内较为领先的电力电子应用技术支撑，包括电动汽车应用试验平台、直流配电应用试验平台、光伏并网试验平台、数据中心电源管理试验平台等，为宽禁带功率芯片和模块的应用验证提供了良好的应用条件。研究成果最早报道了碳化硅（SiC）功率集成芯片、在国内较早自主研制出了系列SiC芯片和模块（600V~6000V/最高300A，SBD、JBS、MPS、JFET、MOSFET）提出沟槽型超级结SiC肖特基二极管设计方法并报道了1300V（不包括衬底0.36 mΩ•cm2，品质因子FOM达国际前列）SiC超级结二极管提出新型垂直型氮化镓晶体管结构并报道了性能位于国际前列的芯片基于新型单驱动方法的10kV/200A碳化硅MOSFET多芯片串-并联模块、首款10kVA基于全碳化硅器件的高压电力电子变压器合作开发了高压大容量硅基IGBT芯片等研究成果在国际顶级学术期刊发表论文270余篇，引用次数2700次以上获授权发明专利20余项（40余项申请中）获得国家技术发明二等奖、浙江省自然科学二等奖各一项部分发明专利（授权） 1 CN201110261260.0 新型功率半导体集成器件 2 CN201110287378.0 一种沟槽MOS结构肖特基二极管及其制备方法 3 CN201110376201.8 一种具有多种绝缘层隔离的沟槽肖特基半导体装置及其制备方法 4 CN201110387741.6 一种沟槽MOS结构半导体装置及其制造方法 5 CN201110387756.2 一种具有超结沟槽MOS结构的半导体装置及其制造方法 6 CN201210006384.9 一种具有超结结构的沟槽肖特基半导体装置及其制备方法 7 CN201210032202.5 一种肖特基超结半导体装置及其制备方法 8 CN201210028179.2 一种含有金属的半导体装置及其制备方法 9 CN201210174782.1 一种可调节电势分布的半导体装置及其制备方法 10 CN201210237780.2 一种具有可调节电势分布的半导体装置及其制备方法 11 CN201010163716.5 多个高频电力电子器件串联时实现均压的方法 12 CN201010592965.6 新型碳化硅肖特基二极管 13 CN201210054548.5 电力电子功率模块散热结构 14 CN201210307101.4 基于图片处理技术的层状结构分层率的计算方法 15 CN201210574053.5 母排型功率模块支架 16 CN201310618725.2 一种具有热电解耦功能的功率器件动态特性测试电路及其测试方法 17 CN201310615891.7 一种采用新型绝缘材料的电力电子模块 18 CN201410226812.8 一种新型电力电子模块英国专利 1 GB0113336A Bi-directional semiconductor switch 2 GB0113336A Semiconductor switch 部分科研项目： 1.“碳化硅高深宽比沟槽型超级结器件基础技术研究”，国家基金委，2018-2021 2.“中低压SiC材料、器件及其再电动汽车充电设备中的应用示范”,国家科技部,2016-2021 3.“突破一维电阻极限的碳化硅单极型高压器件基础研究”，国家基金委，2018-2021 4.“功率半导体器件及其在汽车系统中的应用”,美国福特,2014-2020 5.“碳化硅MOSFET器件项目”，德国英飞凌，2018-2020 6.“碳化硅电力电子器件基础研究”,国家基金委,2013至2016 7.“高压大容量碳化硅功率器件的研发”,国家科技部,2011-2014 8.“高速机车高压IGBT基础技术的研究”，国家科技重大专项，2011-2013

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部分发表的主要刊物论文 1.Hanyuan Zhang,Jiawei Tu,Shu Yang,Kuang Sheng,and Ping Wang,'Optimization of Gate Geometry Towards High-Sensitivity AlGaN/GaN pH Sensor,'Talanta,vol.205,pp.120134-120134,2019,doi:10.1016/j.talanta.2019.120134. 2.Shu Yang,Shaowen Han,Kuang Sheng,and Kevin J.Chen,'Dynamic On-Resistance in GaN Power Devices:Mechanisms,Characterizations,and Modeling,'IEEE Journal of Emerging and Selected Topics in Power Electronics,vol.7,no.3,pp.1425-1439,2019,doi:10.1109/jestpe.2019.2925117. 3.Jiupeng Wu,Na Ren,Hengyu Wang,and Kuang Sheng,'1.2-kV 4H-SiC Merged PiN Schottky Diode With Improved Surge Current Capability,'IEEE Journal of Emerging and Selected Topics in Power Electronics,vol.7,no.3,pp.1496-1504,2019,doi:10.1109/jestpe.2019.2921970. 4.Hengyu Wang,Jue Wang,Li Liu,Na Ren,Jiupeng Wu,Ce Wang,Shu Yang,and Kuang Sheng,'Design and Characterization of Area-Efficient Trench Termination for 4H-SiC Devices,'IEEE Journal of Emerging and Selected Topics in Power Electronics,vol.7,no.3,pp.1519-1526,2019,doi:10.1109/jestpe.2019.2920927. 5.Shuai Shao,Mingming Jiang,Weiwen Ye,Yucen Li,Junming Zhang,and Kuang Sheng,'Optimal Phase-Shift Control to Minimize Reactive Power for a Dual Active Bridge DC-DC Converter,'IEEE Transactions on Power Electronics,vol.34,no.10,pp.10193-10205,2019,doi:10.1109/tpel.2018.2890292. 6.Shuai Shao,Hui Chen,Xinke Wu,Junming Zhang,and Kuang Sheng,'Circulating Current and ZVS-on of a Dual Active Bridge DC-DC Converter:A Review,'IEEE Access,vol.7,pp.50561-50572,2019,doi:10.1109/access.2019.2911009. 7.Na Ren,Hao Hu,Xiaofeng Lyu,Jiupeng Wu,Hongyi Xu,Ruigang Li,Zheng Zuo,Kang Wang,and Kuang Sheng,'Investigation on Single Pulse Avalanche Failure of SiC MOSFET and Si IGBT,'Solid-State Electronics,vol.152,pp.33-40,2019,doi:10.1016/j.sse.2018.11.011. 8.Yinxiang Liu,Shu Yang,Shaowen Han,and Kuang Sheng,'Investigation of Surge Current Capability of GaN E-HEMTs in The Third Quadrant:The Impact of P-GaN Contact,'IEEE Journal of Emerging and Selected Topics in Power Electronics,vol.7,no.3,pp.1465-1474,2019,doi:10.1109/jestpe.2019.2917523. 9.Wei Li,Zengchao Chen,Junye Li,Kuang Sheng,and Jie Zhu,'Subcooled Flow Boiling on Hydrophilic and Super-Hydrophilic Surfaces in Microchannel Under Different Orientations,'International Journal of Heat and Mass Transfer,vol.129,pp.635-649,2019,doi:10.1016/j.ijheatmasstransfer.2018.10.003. 10.Rui Li,Xinke Wu,Shu Yang,and Kuang Sheng,'Dynamic ON-State Resistance Test and Evaluation of GaN Power Devices Under Hard-and Soft-Switching Conditions by Double and Multiple Pulses,'IEEE Transactions on Power Electronics,vol.34,no.2,pp.1044-1053,2019,doi:10.1109/tpel.2018.2844302. 11.Huan Li,Jue Wang,Na Ren,Hongyi Xu,and Kuang Sheng,'Investigation of 1200 V SiC MOSFETs'Surge Reliability,'Micromachines,vol.10,no.7,2019,doi:10.3390/mi10070485. 12.Mingchen Hou,Gang Xie,and Kuang Sheng,'Low Surface Damage During Ohmic Contact Formation in AlGaN/GaN HEMT By Selective Laser Annealing,'Electronics Letters,vol.55,no.11,pp.658-659,2019,doi:10.1049/el.2019.0549. 13.Mingchen Hou,Gang Xie,and Kuang Sheng,'Mechanism of Ti/Al/Ni/Au Ohmic Contacts to AlGaN/GaNHeterostructures via Laser Annealing,'Chinese Physics B,vol.28,no.3,2019,doi:10.1088/1674-1056/28/3/037302. 14.Shaowen Han,Shu Yang,and Kuang Sheng,'Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier With High Blocking Voltage and Low Forward Voltage Drop,'IEEE Electron Device Letters,vol.40,no.7,pp.1040-1043,2019,doi:10.1109/led.2019.2915578. 15.Shaowen Han,Shu Yang,Rui Li,Xinke Wu,and Kuang Sheng,'Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode,'IEEE Transactions on Power Electronics,vol.34,no.6,pp.5012-5018,2019,doi:10.1109/tpel.2018.2876444. 16.Zezheng Dong,Xinke Wu,and Kuang Sheng,'Suppressing Methods of Parasitic Capacitance Caused Interference in a SiC MOSFET Integrated Power Module,'IEEE Journal of Emerging and Selected Topics in Power Electronics,vol.7,no.2,pp.745-752,2019,doi:10.1109/jestpe.2019.2895607. 17.Xue-Qian Zhong,Jue Wang,Bao-Zhu Wang,Heng-Yu Wang,Qing Guo,and Kuang Sheng,'Investigations on Mesa Width Design for 4H-SiC Trench Super Junction Schottky Diodes,'Chinese Physics B,vol.27,no.8,2018,doi:10.1088/1674-1056/27/8/087102. 18.Xueqian Zhong,Baozhu Wang,Jue Wang,and Kuang Sheng,'Experimental Demonstration and Analysis of A 1.35kV 0.92mW·cm2 SiC Superjunction Schottky Diode,'IEEE Transactions on Electron Devices,vol.65,no.4,pp.1458-1465,2018,doi:10.1109/ted.2018.2809475. 19.Hanyuan Zhang,Shu Yang,and Kuang Sheng,'GaN-on-Si Lateral Power Devices with Symmetric Vertical Leakage:The Impact of Floating Substrate,'in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs,2018. 20.Shu Yang,Shaowen Han,Rui Li,and Kuang Sheng,'1 kV/1.3 mΩ·cm2 Vertical GaN-on-GaN Schottky Barrier Diodes with High Switching Performance,'in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs,2018. 21.Hongyi Xu,Jiahui Sun,Jingjing Cui,Jiupeng Wu,Hengyu Wang,Shu Yang,Na Ren,and Kuang Sheng,'Surge Capability of 1.2kV SiC Diodes with High-Temperature Implantation,'in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs,2018. 22.J ianwei Wen,Kuang Sheng,Junming Zhang,Shu Yang,and Wei Jiang,'A Wide Output LLC Converter Based on Full Bridge and Half Bridge Topology Morphing Method Using Trajectory Transition,'in 2018 IEEE Energy Conversion Congress and Exposition,2018. 23.Hengyu Wang,Jue Wang,Li Liu,Yucen Li,Baozhu Wang,Hongyi Xu,Shu Yang,and Kuang Sheng,'Trench Termination With SiO2-Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-SiC Devices,'IEEE Electron Device Letters,vol.39,no.12,pp.1900-1903,2018,doi:10.1109/led.2018.2874471. 24.Baozhu Wang,Hengyu Wang,Xueqian Zhong,Shu Yang,Qing Guo,and Kuang Sheng,'Characterization of 1.2 kV SiC Super-Junction SBD Implemented by Trench and Implantation Technique,'in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs,2018. 25.Yijun Sun,Zhiyuan Cheng,Kuang Sheng,Qiang Zhou,Ying Sun,Peng Chen,Ningze Zhuo,Haibo Wang,Xudong Yu,Michael Heuken,and Takashi Egawa,'Hydrogen induced quality improvement of GaNAs layers grown by chemical beam epitaxy,'Journal of Crystal Growth,vol.500,pp.11-14,2018,doi:10.1016/j.jcrysgro.2018.08.008. 26.Jiahui Sun,Hongyi Xu,Shu Yang,and Kuang Sheng,'Electrical Characterization of 1.2kV SiC MOSFET at Extremely High Junction Temperature,'in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs,2018. 27.Na Ren,Hao Hu,Kang L.Wang,Zheng Zuo,Ruigang Li,and Kuang Sheng,'Investigation on Single Pulse Avalanche Failure of 900V SiC MOSFETs,'in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs,2018. 28.Yalei Qiu,Shu Yang,and Kuang Sheng,'Photolithographic Patterning of Cytop with Limited Contact Angle Degradation,'Micromachines,vol.9,no.10,2018,doi:10.3390/mi9100509. 29.Yuxin Liu,Shaowen Han,Shu Yang,and Kuang Sheng,'Design of Fluorine-Ion-Based Junction Termination Extension for Vertical GaN Schottky Rectifier,'in 2018 IEEE International Power Electronics and Application Conference and Exposition,2018. 30.Rui Li,Xinke Wu,Gang Xie,and Kuang Sheng,'Dynamic On-state Resistance Evaluation of GaN Devices under Hard and Soft Switching Conditions,'in Thirty-Third Annual IEEE Applied Power Electronics Conference and Exposition,2018. 31.Mingchen Hou,Gang Xie,and Kuang Sheng,'Improved Device Performance in AlGaN/GaN HEMT by Forming Ohmic Contact With Laser Annealing,'IEEE Electron Device Letters,vol.39,no.8,pp.1137-1140,2018,doi:10.1109/led.2018.2844951. 32.Shaowen Han,Shu Yang,and Kuang Sheng,'High-Voltage and High-I-ON/I-OFF Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination,'IEEE Electron Device Letters,vol.39,no.4,pp.572-575,2018,doi:10.1109/led.2018.2808684. 33.Lu Gan,Haisheng Tao,Xianwen Kan,Qian Chen,Kuang Sheng,and Jie Wu,'Phosphorus-Doped Carbon Nanocages for Simultaneous Detection of Dopamine and Uric Acid,'Journal of Analytical Chemistry,vol.73,no.10,pp.978-985,2018,doi:10.1134/s1061934818100040. 34.Zezheng Dong,Xinke Wu,and Kuang Sheng,'Analysis of Gate Signal Interference in an Integrated SiC MOSFET Module,'in Thirty-Third Annual IEEE Applied Power Electronics Conference and Exposition,2018. 35.Zhen Zhang,Junming Zhang,Shuai Shao,Xinke Wu,and Kuang Sheng,'A Novel Fixed Off-Time Control Method for Single-Phase Micro-Inverter Without Sensing Inductor Current,'in 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia,2017. 36.Shu Yang,Chunhua Zhou,Shaowen Han,Jin Wei,Kuang Sheng,and Kevin J.Chen,'Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices,'IEEE Transactions on Electron Devices,vol.64,no.12,pp.5048-5056,2017,doi:10.1109/ted.2017.2764527. 37.Tao Wang,Wei Guo,Luowei Wen,Yan Liu,Bin Zhang,Kuang Sheng,and You Yin,'Ab initio Study of Tunable Band Gap of Monolayer and Bilayer Phosphorene by the Vertical Electronic Field,'Journal of Wuhan University of Technology-Materials Science Edition,vol.32,no.1,pp.213-216,2017,doi:10.1007/s11595-017-1582-1. 38.Tao Wang,Minyan Chen,Bowen Fan,Yan Liu,Kuang Sheng,You Yin,and Yiqun Xie,'First-Principles Calculation of Photocurrent in Monolayer Silicene Sheet Under Small Voltages,'Optics Communications,vol.395,pp.289-292,2017,doi:10.1016/j.optcom.2016.05.072. 39.Hengyu Wang,Ming Su,and Kuang Sheng,'Theoretical Performance Limit of the IGBT,'IEEE Transactions on Electron Devices,vol.64,no.10,pp.4184-4192,2017,doi:10.1109/ted.2017.2737021. 40.Kuang Sheng,Shu Yang,Qing Guo,and Hongyi Xu,'Recent Progress in SiC and GaN Power Devices,'in Gallium Nitride and Silicon Carbide Power Technologies 7,vol.80,ECS Transactions,no.7,2017,pp.37-51. 41.Na Ren,Kang L.Wang,Zheng Zuo,Ruigang Li,and Kuang Sheng,'A Novel 4H-SiC Pinched Barrier Rectifier,'in 2017 Thirty Second Annual IEEE Applied Power Electronics Conference and Exposition,2017. 42.Mingming Jiang,Shuai Shao,Kuang Sheng,and Junming Zhang,'A Capacitor Voltage Balancing Method for a Three Phase Modular Multilevel DC-DC Converter,'in 2017 IEEE Energy Conversion Congress and Exposition,2017. 43.Weicheng Zhou,Qing Guo,Xinke Wu,Yi Liu,and Kuang Sheng,'A 1200V/100A all-SiC Power Module for Boost Converter of EV/HEV's Motor Driver Application,'in 2016 13th China International Forum on Solid State Lighting:International Forum on Wide Bandgap Semiconductors China,2016. 44.X ueqian Zhong,Baozhu Wang,and Kuang Sheng,'Design and Experimental Demonstration of 1.35 kV SiC Super Junction Schottky Diode,'in 2016 28th International Symposium on Power Semiconductor Devices and ICs,2016. 45.Zhaohui Wang,Junming Zhang,Xinke Wu,and Kuang Sheng,'Evaluation of Reverse Recovery Characteristic of Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor Intrinsic Diode,'Iet Power Electronics,vol.9,no.5,pp.969-976,2016,doi:10.1049/iet-pel.2014.0965. 46.Zhaohui Wang,Junming Zhang,and Kuang Sheng,'An Isolated Bidirectional Modular Multilevel DC/DC Converter for Power Electronic Transformer Applications,'Journal of Power Electronics,vol.16,no.3,pp.861-871,2016,doi:10.6113/jpe.2016.16.3.861. 47.Yu-Fu Wang,Sheng-Kuang Peng,Po-Kong Huang,Horng-Long Chen,and Wei-Yang Choua,'Interface Engineering for Improving the Electrical Stability and Photoelectric Effects of Organic Memory Transistors,'in 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices,2016. 48.Junjun Wang,Lin Xu,Yang Lu,Kuang Sheng,Wei Liu,Cong Chen,Yang Li,Biao Dong,and Hongwei Song,'Engineered IrO2@NiO Core-Shell Nanowires for Sensitive Non-enzymatic Detection of Trace Glucose in Saliva,'Analytical Chemistry,vol.88,no.24,pp.12346-12353,2016,doi:10.1021/acs.analchem.6b03558. 49.Cen Tang,Xueyang Li,Mingchen Hou,Gang Xie,and Kuang Sheng,'Quasi-Bipolar Channel Modulation Instability Analysis for P-GaN gate High Electron Mobility Transistor,'in 2016 28th International Symposium on Power Semiconductor Devices and ICs,2016. 50.Jiahui Sun,Hongyi Xu,Xinke Wu,and Kuang Sheng,'Comparison and Analysis of Short Circuit Capability of 1200V Single-Chip SiC MOSFET and Si IGBT,'in 2016 13th China International Forum on Solid State Lighting:International Forum on Wide Bandgap Semiconductors China,2016. 51.Xueyang Li,Gang Xie,Cen Tang,and Kuang Sheng,'Charge trapping related channel modulation instability in P-GaN gate HEMTs,'Microelectronics Reliability,vol.65,pp.35-40,2016,doi:10.1016/j.microrel.2016.07.040. 52.Yandong Jiang,Dali Liu,Yudan Yang,Ru Xu,Tianxiang Zhang,Kuang Sheng,and Hongwei Song,'Photoelectrochemical detection of alpha-fetoprotein based on ZnO inverse opals structure electrodes modified by Ag2S nanoparticles,'Scientific Reports,vol.6,2016,doi:10.1038/srep38400. 53.Tianyang Jiang,Junming Zhang,Xinke Wu,Kuang Sheng,and Yousheng Wang,'A Bidirectional Three-Level LLC Resonant Converter With PWAM Control,'IEEE Transactions on Power Electronics,vol.31,no.3,pp.2213-2225,2016,doi:10.1109/tpel.2015.2438072. 54.Furong Jiang,Kuang Sheng,and Qing Guo,'Comparative Study of Temperature-Dependent Characteristics for SiC MOSFETs,'in 2016 13th China International Forum on Solid State Lighting:International Forum on Wide Bandgap Semiconductors China,2016. 55.Wen-Chiang Hong,Chieh-Jen Ku,Rui Li,Siamak Abbaslou,Pavel Reyes,Szu-Ying Wang,Guangyuan Li,Ming Lu,Kuang Sheng,and Yicheng Lu,'MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics,'Scientific Reports,vol.6,2016,doi:10.1038/srep34169. 56.Sizhe Chen,Ao Liu,Junwei He,Song Bai,and Kuang Sheng,'Design and Application of High-Voltage SiC JFET and Its Power Modules,'IEEE Journal of Emerging and Selected Topics in Power Electronics,vol.4,no.3,pp.780-789,2016,doi:10.1109/jestpe.2016.2562112. 57.Qiang Xiao,Yang Yan,Xinke Wu,Na Ren,and Kuang Sheng,'A 10kV/200A SiC MOSFET Module with Series-Parallel Hybrid Connection of 1200V/50A Dies,'in 2015 IEEE 27th International Symposium on Power Semiconductor Devices&ICs,2015. 58.Zhaohui Wang,Junming Zhang,and Kuang Sheng,'Modular Multilevel Power Electronic Transformer,'in 2015 9th International Conference on Power Electronics and ECCE Asia,2015. 59.Tao Wang,Yan Liu,Qing Guo,Bin Zhang,Kuang Sheng,Can Li,and You Yin,'Tunable Bandgap of Monolayer Black Phosphorus by Using Vertical Electric Field:A DFT Study,'Journal of the Korean Physical Society,vol.66,no.6,pp.1031-1034,2015,doi:10.3938/jkps.66.1031. 60.Cen Tang,Gang Xie,and Kuang Sheng,'Study of the Leakage Current Suppression for Hybrid-Schottky/Ohmic Drain AlGaN/GaN HEMT,'Microelectronics Reliability,vol.55,no.2,pp.347-351,2015,doi:10.1016/j.microrel.2014.10.018. 61.Cen Tang,Gang Xie,and Kuang Sheng,'Enhancement-mode GaN-on-Silicon MOS-HEMT Using Pure Wet Etch Technique,'in 2015 IEEE 27th International Symposium on Power Semiconductor Devices&ICs,2015. 62.Cen Tang,Mingchen Hou,Xueyang Li,Gang Xie,and Kuang Sheng,'CMOS-compatible Ehancement-mode GaN-on-Si MOS-HEMT with High Breakdown Voltage(930V)using Thermal Oxidation and TMAH Wet Etching,'in 2015 IEEE Energy Conversion Congress and Exposition,2015. 63.Qingling Li,Dali Liu,Lin Xu,Ruiqing Xing,Wei Liu,Kuang Sheng,and Hongwei Song,'Wire-in-Tube IrOx Architectures:Alternative Label-Free Immunosensor for Amperometric Immunoassay toward alpha-Fetoprotein,'Acs Applied Materials&Interfaces,vol.7,no.40,pp.22719-22726,2015,doi:10.1021/acsami.5b07895. 64.Can Li,Yan Liu,Bin Zhang,Tao Wang,Qing Guo,Kuang Sheng,and You Yin,'The Effect of h-BN Buffer Layers in Bilayer Graphene on Co(111),'Journal of the Korean Physical Society,vol.66,no.10,pp.1631-1636,2015,doi:10.3938/jkps.66.1631. 65.Can Li,Bowen Fan,Weiyi Li,Luowei Wen,Yan Liu,Tao Wang,Kuang Sheng,and You Yin,'Bandgap Engineering of Monolayer MoS2 Under Strain:A DFT Study,'Journal of the Korean Physical Society,vol.66,no.11,pp.1789-1793,2015,doi:10.3938/jkps.66.1789. 66.Tianyang Jiang,Junming Zhang,Xinke Wu,Kuang Sheng,and Yousheng Wang,'A Bidirectional LLC Resonant Converter With Automatic Forward and Backward Mode Transition,'IEEE Transactions on Power Electronics,vol.30,no.2,pp.757-770,2015,doi:10.1109/tpel.2014.2307329. 67.Zezheng Dong,Xinke Wu,Kuang Sheng,and Junming Zhang,'Impact of Common Source Inductance on Switching Loss of SiC MOSFET,'in 2015 IEEE 2nd International Future Energy Electronics Conference,2015. 68.Zheng Dong,Apu Kapadia,Jim Blythe,and L.Jean Camp,'Beyond the Lock Icon:Real-time Detection of Phishing Websites Using Public Key Certificates,'in 2015 Apwg Symposium on Electronic Crime Research,2015. 69.Sizhe Chen,Junwei He,Hengyu Wang,and Kuang Sheng,'Fabrication and Testing of 3500V/15A SiC JFET Based Power Module for High-Voltage,High-Frequency Applications,'in 2015 Thirtieth Annual IEEE Applied Power Electronics Conference and Exposition,2015. 70.Sizhe Chen,Junwei He,and Kuang Sheng,'High-Voltage Full-SiC Power Module:Device Fabrication,Testing and High Frequency Application in kW-level Converter,'in 2015 IEEE 27th International Symposium on Power Semiconductor Devices&ICs,2015. 71.Lijuan Long,Junming Zhang,and Kuang Sheng,'Analysis of the Root Mean Square Current of VIENNA Rectifier,'Power Electronics,vol.53,no.2,pp.8-11,2019. 72.Zhihong Liu,Yi Tang,and Kuang Sheng,'Latest Developments of Reverse-conducting IGBT,'in Chinese Society of Electrical Engineering,2019,2019. 73.Mingchen Hou,Gang Xie,and Kuang Sheng,'Mechanism of Ti/Al/Ni/Au Ohmic Contacts to AlGaN/GaN Heterostructures via Laser Annealing,'Chinese Physics.B,vol.28,no.3,2019. 74.Furong Jiang,Shu Yang,and Kuang Sheng,'Comparative Study on Temperature-dependent Characteristic Parameters of SiC MOSFET,'Journal of Power Supply,vol.16,no.6,pp.143-151,2018. 75.Zezheng Dong,Xinke Wu,and Kuang Sheng,'Switching Losses Model of SiC MOSFET,'Power Electronics,vol.52,no.8,pp.31-33,85,2018. 76.Liumin Wang,Rui Jin,Gang Xie,Jiahong Yu,and Kuang Sheng,'Design of 3 300 V Soft Punch Through Fast IGBT Based on Application of High Voltage and High Current Modules STBZ,'Research&Progress of Solid State Electronics,vol.37,no.1,pp.45-51,2017. 77.Jiahong Yu,Hanyue Li,Gang Xie,Liumin Wang,Rui Jin,and Kuang Sheng,'A Novel Structure of Anode-Shorted IGBT with p-Barrier Layer,'Semiconductor Technology,vol.41,no.9,pp.679-683,2016. 78.Yang Yan,Xinke Wu,and Kuang Sheng,'99.2%Efficiency ZVS Single-phase PFC Rectifier with SiC MOSFET,'Journal of Power Supply,vol.14,no.4,pp.73-81,2016. 79.Liumin Wang,Rui Jin,Xiaoyi Xu,Gang Xie,and Kuang Sheng,'Structure of 3D Shorted-Anode LIGBT with the p-Pillar,'Semiconductor Technology,vol.41,no.4,pp.280-285,2016. 80.Kuang Sheng,Qing Guo,Kunshan Yu,and Xiaowei Ding,'Medium and low voltage SiC materials,power devices and demonstration in electric vehicle charging equipment,'Journal of Zhejiang University.Sciences Edition,vol.43,no.6,pp.631-634,637,2016. 81.Zezheng Dong,Xinke Wu,Kuang Sheng,and Junming Zhang,'Impact of Common Source Inductance on Switching Loss of SiC MOSFET,'Journal of Power Supply,vol.14,no.4,pp.112-118,2016. 82.Na Ren and Kuang Sheng,'2.5 mW·cm2,1 750 V 4H-SiC Junction Barrier Schottky Diodes With Floating Guard Ring Termination Structure,'in Chinese Society of Electrical Engineering,2015,2015. 83.Junwei He,Sizhe Chen,Na Ren,Song Bai,Yonghong Tao,Ao Liu,and Kuang Sheng,'Fabrication and Testing of 4 500 V SiC SBD and JFET Power Modules,'Transactions of China Electrotechnical Society,vol.30,no.17,pp.63-69,2015. 84.Sizhe Chen and Kuang Sheng,'4 700V SiC PiN Rectifier,'Transactions of China Electrotechnical Society,vol.30,no.22,pp.57-61,2015.

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国家863主题项目首席专家国家863计划先进能源技术领域新型电力电子技术主题专家组专家（召集人）国家重点研发计划项目负责人 Internationa Symposium on Power Semiconductor Devices and Ics（ISPSD，国际功率器件及集成电路年会）技术委员会主席，2015 Internationa Symposium on Power Semiconductor Devices and Ics（ISPSD，国际功率器件及集成电路年会）大会主席，2019 IEEE高级会员 Associate Editor,IEEE Transactions on Power Electronics Associate Editor,IEEE Transactions on Industria Applications 中国电源学会常务理事、元器件专委会副主任

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