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招生方向 高亮度半导体激光芯片 高速面发射激光器 碟片激光 教育背景 2002-09--2005-07 中国科学院半导体研究所 博士 1999-09--2002-07 重庆大学 硕士 1995-09--1999-07 重庆大学 学士 工作经历 2010 年11月--- 中科院长春光学精密机械与物理研究所,发光学及应用国家重点实验室,研究员 。 工作简历 2010-11~现在, 中国科学院长春光学精密机械与物理研究所, 研究员 2009-08~2010-11,加拿大多伦多大学, 博士后 2005-08~2009-07,新加坡南洋理工大学电子工程学院, Research Fellow 专利成果 ( 1 ) 可提高砷化铝氧化均匀性的外延片承载装置, 实用新型, 2004, 第 1 作者, 专利号: ZL 200420009923.5 ( 2 ) 低横向发散角布拉格反射波导边发射半导体激光器, 发明, 2011, 第 2 作者, 专利号: 201110272765.7 ( 3 ) 低发散角全布拉格波导半导体激光器阵列, 发明, 2012, 第 2 作者, 专利号: 201210080117.6 ( 4 ) 一种基于双光栅的波长可调谐激光相干合束系统, 发明, 2013, 第 2 作者, 专利号: 201310066211.0 ( 5 ) 一种单片垂直集成多波长半导体激光器及其制造方法, 发明, 2012, 第 1 作者, 专利号: CN201210164671.2 ( 6 ) 布拉格反射波导双光束激光器及其应用方法, 发明, 2012, 第 2 作者, 专利号: CN201210164640.7 ( 7 ) Bragg反射镜耦合表面等离子体激光光源, 发明, 2012, 第 4 作者, 专利号: CN201210487839.3 ( 8 ) 光子晶体纳腔量子环单光子发射器件及其制备方法, 发明, 2013, 第 1 作者, 专利号: 201310254144.5 ( 9 ) 相干合束系统和方法, 发明, 2016, 第 1 作者, 专利号: 201610132600.2 ( 10 ) 一种半导体激光器及其制作方法, 发明, 2016, 第 1 作者, 专利号: 201610098480.9 ( 11 ) 基于光子晶体Y波导的片上集成合束激光器及其制作方法, 发明, 2014, 第 1 作者, 专利号: 201410734382.0 ( 12 ) 一种高效侧向导热的量子级联激光器结构及其制备方法, 发明, 2014, 第 1 作者, 专利号: 201410821162.1 ( 13 ) 高功率共面电极泄露波激光器, 发明, 2015, 第 2 作者, 专利号: 201510457852.8 ( 14 ) 单片集成电泵浦布拉格反射波导太赫兹激光器, 发明, 2015, 第 2 作者, 专利号: 201510457083.1 ( 15 ) 一种半导体激光器外腔相干合束系统, 发明, 2017, 第 1 作者, 专利号: 201710779811.X ( 16 ) 一种半导体激光器光谱合束系统, 发明, 2017, 第 1 作者, 专利号: 201710779625.6 ( 17 ) 一种半导体激光器合束装置及合束方法, 发明, 2017, 第 1 作者, 专利号: 201711171795.2 ( 18 ) Spectral beam combined laser system and method, 发明, 2019, 第 1 作者, 专利号: US 10333265 ( 19 ) 一种半导体激光器合束装置, 发明, 2018, 第 1 作者, 专利号: 201810385607.4 ( 20 ) 一种半导体激光器及制作方法, 发明, 2018, 第 1 作者, 专利号: 201810763803.0 ( 21 ) 一种激光合束系统, 发明, 2018, 第 1 作者, 专利号: 201811160073.1 ( 22 ) 半导体激光装置, 发明, 2018, 第 1 作者, 专利号: 201811331013.1 ( 23 ) 一种面发射激光器、面发射激光器阵列及光学扫描装置, 发明, 2018, 第 1 作者, 专利号: 201811340019 .5 ( 24 ) 一种半导体激光器及其制备方法, 发明, 2018, 第 1 作者, 专利号: 201811593627.7 ( 25 ) 一种可调谐啁啾布拉格体光栅及啁啾脉冲放大系统, 发明, 2020, 第 2 作者, 专利号: ZL201711463179.4 ( 26 ) Laser beam combining system, 发明, 2019, 第 1 作者, 专利号: US16,258,059 科研项目 ( 1 ) 新型Bragg反射波导光子晶体激光器的研究, 主持, 国家级, 2011-01--2013-12 ( 2 ) 高功率、低发散角Bragg反射波导光子晶体激光器, 主持, 国家级, 2010-11--2013-12 ( 3 ) 大功率半导体激光器及应用产品开发, 参与, 省级, 2010-01--2013-12 ( 4 ) 高功率、低发散角量子点纵向光子晶体激光器的研究, 主持, 国家级, 2012-01--2015-12 ( 5 ) 大功率高亮度光子晶体激光器及列阵, 主持, 市地级, 2011-08--2013-12 ( 6 ) 量子点及波导耦合输出极低功耗发光器件, 主持, 国家级, 2013-01--2017-12 ( 7 ) 百瓦级热管冷却小体积半导体激光器模块的合作研究, 主持, 国家级, 2013-04--2016-10 ( 8 ) 碟片激光器, 主持, 院级, 2016-01--2017-12 ( 9 ) 高速光子晶体面发射激光器, 主持, 部委级, 2017-01--2019-12 ( 10 ) 锑化物光谱合束阵列大功率激光器, 主持, 国家级, 2018-01--2022-12 ( 11 ) 基于MOPA放大与相干合束的高功率半导体超短脉冲激光研究, 主持, 国家级, 2018-01--2021-12 ( 12 ) 高亮度GaN基光子晶体激光器的研究, 主持, 国家级, 2018-01--2020-12 ( 13 ) 基于损耗剪裁的高亮度半导体激光芯片, 主持, 省级, 2019-01--2021-12 ( 14 ) 面向短距离光互连应用关键芯片、器件与模块技术, 主持, 国家级, 2019-08--2023-07 合作情况 多伦多大学; 白俄罗斯科学院; 新加坡南洋理工大学; 中国科技大学; 中科院半导体所;

近期论文

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(1) Beam waist shrinkage of high-power broad-area diode lasers by mode tailoring, Optics Express, 2020, 通讯作者 (2) High power femtosecond semiconductor lasers based on saw-toothed master-oscillator power-amplifier system with compressed ASE, Optics Express, 2020, 通讯作者 (3) Efficiency and threshold characteristics of spectrally beam combined high-power diode lasers, IEEE J. Quantum Electron, 2019, 通讯作者 (4) High power (>27W) semiconductor disk laser based on pre-metalized diamond heat-spreader, IEEE Photonics Journal, 2019, 通讯作者 (5) Enhancing third-and fifth-order nonlinearity via tunneling in multiple quantum dots, Nanomaterials, 2019, 通讯作者 (6) Parity-time symmetry in coherent asymmetric double quantum wells, Scientific Reports, 2019, 通讯作者 (7) Extract more light for vertical emitting: high power continuous wave operation of 1.3-m quantum-dot photonic-crystal surface-emitting lasers based on flat band, Light: Science and Applications, 2019, 通讯作者 (8) Loss tailoring of high power broad area diode lasers, Optics Letter, 2019, 通讯作者 (9) Harmonic mode-locking in an external-cavity tapered diode laser with saw-toothed microstructure, Appl. Phys. Express, 2019, 通讯作者 (10) High-brightness diode lasers obtained via off-axis spectral beam combining with selective feedback, Optics Express, 2018, 通讯作者 (11) Asymmetric light diffraction of two-dimensional electromagnetically induced grating with PT symmetry in asymmetric double quantum wells, Optics Express, 2018, 通讯作者 (12) Going beyond the beam quality limit of spectral beam combining of diode lasers in a V-shaped external cavity, Optics Express, 2018, 通讯作者 (13) Off-axis spectral beam combining of Bragg reflection waveguide photonic crystal diode lasers, Japanese Journal of Applied Physics, 2018, 通讯作者 (14) High-power GaSb-based microstripe broad-area lasers, Applied Physics Express, 2018, 通讯作者 (15) Beam control of high-power broad-area photonic crystal lasers using ladderlike groove structure, Applied Physics Express, 2017, 通讯作者 (16) Modulation of carrierdynamics and threshold characteristics in 1.3-μm quantum dot photonic crystalnanocavity lasers, Optics and Laser Technology, 2016, 通讯作者 (17) Transient gain–absorption of the probe field intriple quantum dots coupled by double tunneling, Optics Communications, 2016, 通讯作者 (18) Low lateral divergence 2 μm InGaSb/ AlGaAsSb broad-area quantum welllasers, Optics Express, 2016, 通讯作者 (19) Creation and Transfer of Coherence via Technique ofStimulated Raman Adiabatic Passage in Triple Quantum Dots, Nanoscale Research Letters, 2016, 通讯作者 (20) Cavity linewidth narrowing by tunneling induced double dark resonances in triple quantum dot molecules, Optics Communications, 2015, 通讯作者 (21) “Giant fifth-order nonlinearity via tunneling induced quantum interference in triple quantum dots, AIP Advances, 2015, 通讯作者 (22) Tunneling induced transparency and giant Kerr nonlinearity in multiple quantum dot molecules, Physica E, 2015, 通讯作者 (23) High Power, Ultra-low Divergence Edge-Emitting Diode Laser with Circular Beam, IEEE J. Select. Topics Quantum Electron, 2015, 通讯作者 (24) Control of optical bistability and third-order nonlinearity via tunneling induced quantum interference in triangular quantum dot molecules, AIP Advances, 2015, 通讯作者 (25) Controllable cavity linewidth narrowing via spontaneously generated coherence in a four level atomic system, Opt. Communications, 2015, 通讯作者 (26) Giant Kerr nonlinearity via tunneling induced double dark resonances in triangular quantum dot molecules, Laser Physics Letters, 2015, 通讯作者 (27) Spectral line narrowing via spontaneously generated coherence in quantum dot molecules, Opt. Communications, 2014, 通讯作者 (28) Effects of spontaneously generated coherence on resonance fluorescence from triple quantum dot molecules, J. Luminescence, 2014, 通讯作者 (29) Giant Kerr nonlinearity induced by tunneling in triple quantum dot molecules, J. Optical Society of America B, 2014, 通讯作者 (30) Tunneling induced dark state and controllable fluorescence spectrum in triple quantum-dot molecules, J. Physics B, 2014, 通讯作者 (31) Bragg reflection waveguide twin-beam lasers, Laser Phys., 2013, 通讯作者 (32) High efficiency beam combination of 4.6-um quantum cascade lasers, Chin. Opt. Lett., 2013, 通讯作者 (33) Tapered Bragg reflection waveguide edge emitting lasers with near circular twin-beam emission, Chin. Opt. Lett, 2013, 通讯作者 (34) Improved performance of 1.3-μm multilayer p-doped InAs/InGaAs quantum dot lasers using rapid thermal annealing, IEEE Trans. on Nanotechnology, 2012, 第 2 作者 (35) High power single-sided Bragg reflection waveguide lasers with , Appl. Phys. B, 2012, 通讯作者 (36) Observation of the fluorescence spectrum for a driven cascade model system in atomic beam, Opt. Express, 2012, 第 3 作者 (37) Large size self-assembled quantum rings: quantum size effect and modulation on the surface diffusion, Nanoscale Research Lett., 2012, 第 1 作者 (38) Thermal effects and small signal modulation of 1.3-μm InAs/GaAs self-assembled quantum-dot lasers, Nanoscale Research Letters, 2011, 第 3 作者 (39) 1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process, IEEE Photon. Technol. Lett., 2011, 第 4 作者 (40) Mode selectivity in Bragg reflection waveguide lasers, IEEE Photon. Technol. Lett., 2011, 第 1 作者 (41) Self-heating effect in 1.3μm p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers, J. Appl. Phys., 2010, 第 2 作者 (42) Effects of thermal annealing on the dynamic characteristics of InAs/GaAs quantum dot lasers, IEEE Photonics Journal , 2010, 通讯作者 (43) Characteristics of edge emitting Bragg reflection waveguide lasers, IEEE J. Quantum Electron., 2010, 第 1 作者 (44) CW single photonic bandgap mode operation in Bragg reflection waveguide lasers, SPIE, 2010, 第 1 作者 (45) Room-temperature continuous- wave operation of the In(Ga)As/GaAs quantum-dot VCSELs for the 1.3μm optical-fibre communication, Semiconductor Science and Tech, 2009, 第 2 作者 (46) Two-state competition in 1.3um multilayer InAs/InGaAs quantum dot lasers, Appl. Phys. Lett., 2009, 第 3 作者 (47) Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach, Appl. Phys. B, 2009, 第 4 作者 (48) High-temperature continuous-wave single-mode operation of 1.3-μm p-doped InAs–GaAs quantum-dot VCSELs, IEEE Photon. Technol. Lett. , 2009, 第 3 作者 (49) Fabrication and modulation characteristics of 1.3-μm p-doped InAs quantum dot vertical cavity surface emitting lasers, Journal of Physics D: Applied Physics, 2009, 第 4 作者 (50) A study of low energy Ar+ sputtering induced surface morphological evolution on GaAs substrates, J. Appl. Phys. , 2009, 第 4 作者 (51) Temperature characteristics of 1.3μm p-doped InAs- GaAs quantum dot vertical- cavity surface-emitting lasers, IEEE J. Select. Topics Quantum Electron., 2009, 第 1 作者 (52) Carrier relaxation and modulation response of 1.3um InAs-GaAs quantum dot lasers, J. Lightwave. Tech., 2009, 第 1 作者 (53) Theoretical investigation of 1.3μm dots-under-a-well and dots-in-a-well InAs/GaAs quantum dot vertical-cavity surface-emitting lasers, J. Appl. Phys., 2009, 第 1 作者 (54) Investigation of high-speed modulation of 1.3μm InAs/InGaAs quantum dot VCSELs, SPIE, 2009, 第 1 作者 (55) Temperature characteristics of gain profiles in 1.3μm p-doped and undoped InAs/GaAs quantum dot lasers, IEEE Electron Device Letters, 2009, 第 2 作者 (56) High-temperature continuous-wave single-mode operation of 1.3-μm p-doped InAs–GaAs quantum-dot VCSELs, IEEE Photon. Technol. Lett. , 2009, 第 3 作者 (57) Self-consistent analysis of carrier confinement and output power in 1.3μm InAs-GaAs quantum-dot VCSELs, IEEE J. Quantum Electron., 2008, 第 3 作者 (58) Effects of rapid thermal annealing on optical properties of p-doped and undoped InAs/InGaAs dots-in-a-well structures, J. Appl. Phys., 2008, 第 4 作者 (59) Investigation of the fabrication mechanism of self-assembled GaAs quantum rings grown by droplet epitaxy, Nanotechnology, 2008, 第 1 作者 (60) An investigation of growth temperature on the surface morphology and optical properties of 1.3μm InAs/InGaAs/GaAs quantum dot structures, Nanotechnology, 2007, 第 3 作者 (61) Low transparency current density and high temperature operation from ten-layer p-doped 1.3μm InAs/InGaAs/GaAs quantum dot lasers, Appl. Phys. Lett., 2007, 第 4 作者 (62) Rate equation model of the negative characteristic temperature of InAs/GaAs quantum dot lasers, J. Appl. Phys, 2007, 第 1 作者 (63) Comparative analysis of cavity length-dependent temperature sensitivity of GaInNAs quantum dot lasers and quantum well lasers, Nanotechnology, 2006, 第 4 作者 (64) Rate equations for 1.3μm dots-under-a-well and dots-in -a-well self-assembled InAs/ GaAs quantum dot lasers, IEEE J. Quantum Electron., 2006, 第 1 作者

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