个人简介
1999年3月毕业于清华大学材料科学与工程系，获博士学位。1998年12月，在博士学习阶段参与研究的工作＂离子束材料改性中若干基础性问题的研究＂获得北京市科学技术进步一等奖。其后于2000年2月起在Augsburg大学作为德国洪堡基金会资助的洪堡学者系统研究了二六族半导体纳米颗粒埋层的形成机理。2002年3月至2007年6月，受聘于德国Erlangen-Nuremberg大学，作为主研人员参加一德国科研联合会的大型项目之分项目，以及主持研究了一巴伐利亚科研基金会的项目，主要工作是应用厚度可原子层级精确可控的原子层沉积技术（Atomic Layer Deposition）制备超薄氧化物膜，并对其在半导体SiC和Si的界面性质进行研究。于国内外刊物已发表论文25篇。2008年9月起，为北京工业大学材料学院教师。
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K. Y. Gao, T. Seyller, and L. Ley, How the solid state matrix affects the chemical shift of core-level binding energies: A novel method to take the induction effect into account, Solid State Communications, 139(7), 370-375 (2006).
l Th. Seyller, K.V. Emtsev, F. Speck, K.Y. Gao and L. Ley, Schottky barrier between 6H-SiC and graphite – Implications for metal / SiC contact formation, Applied Physics Letters, 88, 242103 (2006).
l K. Y. Gao, F. Speck, K. Emtsev, T. Seyller, L. Ley, M. Oswald, and W. Hansch, The interface of atomic layer deposited Al2O3 on H-terminated silicon, physica status solidi (a) 203, No. 9, 2194-2199 (2006).
l Th. Seyller, K. V. Emtsev, K. Y. Gao, F. Speck, L. Ley, A. Tadich, L. Broekman, J. D. Riley, R.C.G. Leckey, O. Rader, A. Varykholov, A. M. Shikin, Structural and electronic properties of graphite layers grown on SiC(0001), Surface Science, 600, 3906 (2006).
l K.Y. Gao, Th. Seyller, K. Emtsev, L. Ley, F. Ciobanu, G. Pensl, ALD Deposited Al2O3 Films on 6H-SiC(0001) after Annealing in Hydrogen Atmosphere, Materials Science Forum 483-485, 559 (2005).
l Th. Seyller, K.Y. Gao, L. Ley, F. Ciobanu, G. Pensl, A. Taddich, J.D. Riley, and R. G. C. Leckey, Structural and electronic properties of the 6H-SiC(0001)/Al2O3 interface prepared by atomic layer deposition, Materials Science Forum 457-460, 1369 (2004).
l K.Y. Gao, Th. Seyller, L. Ley, F. Ciobanu, G. Pensl, A. Taddich, J.D. Riley, and R. G. C. Leckey, Al2O3prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001), Applied Physics Letters, 83(9), 1830-1832 (2003).
l K.Y. Gao, H. Karl, I. Grosshans, W. Hipp and B. Stritzker, Comparative study of as-implanted and pre-damaged ion-beam-synthesized ZnS nanocrystallites in SiO2, Nuclear Instruments and Methods in Physics Research B, 196, 68-74 (2002).
l K.Y. Gao and B.X. Liu, High current Ni-ion implantation to synthesize NiSi2 layers on Si with very low resistivity, Nuclear Instruments and Methods in Physics Research B, 148 (1-4), 615-620 (1999).
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