张永哲 - 北京工业大学 - 光电子技术实验室

个人简介

2009年毕业于兰州大学物理系获凝聚态物理专业博士学位，2010年3月至9月在韩国延世大学从事博士后研究工作，2010年9月至2013年1月在新加坡南洋理工大学电子电气工程学院做Research Scientist。所获荣誉国家优秀青年基金及北京市杰出青年基金获得者、北京市海外高层次引进人才、北京市青年拔尖人才、北京市科技新星、北京市特聘专家、朝阳区凤凰计划

研究领域

半导体光电探测器（二维材料光电探测器、量子点探测器及二类超晶格红外探测器）、硅基太阳能电池、新型电子信息器件等。

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

Identification of embedded nanotwins at c-Si/a-Si: H interface limiting the performance of high-efficiency silicon heterojunction solar cells Nature Energy 6, 194–202 (2021) Broadband high photoresponse from pure monolayer graphene photodetector Nature Communications 4, 1811 (2013) Highly in-planeoptical and electrical anisotropy of 2D germanium arsenide Advanced Functional Materials 28, 1707379 (2018) Strain Effect Enhanced Ultrasensitive MoS2 Nanoscrolls Avalanche Photodetector The Journal of Physical Chemistry Letters 11, 4490-4497 (2020) Transition metal dichalcogenides thyristor realized by solid ionic conductor gate induced doping Applied Physics Letters 117, 053102 (2020) Valley Polarization and Valleyresistance in a Monolayer Transition Metal Dichalcogenide Superlattice The Journal of Physical Chemistry Letters 11, 3882-3888 (2020) High‐Performance Photodiode Based on Atomically Thin WSe2/MoS2 Nanoscroll Integration Small 15, 1901544 (2019) Enhanced Performance of a CVD MoS2 Photodetector by Chemical in Situ n-Type Doping ACS applied materials & interfaces 11, 11636-11644 (2019) A tunable floating-base bipolar transistor based on a 2D material homojunction realized using a solid ionic dielectric material Nanoscale 11, 22531-22538 (2019) Visible-infrared dual-mode MoS2-graphene-MoS2 phototransistor with high ratio of the Iph/Idark 2D Materials 5, 045027 (2018) High Detectivity from a Lateral Graphene–MoS2 Schottky Photodetector Grown by Chemical Vapor Deposition Advanced Electronic Materials 4, 1800069 (2018) High Anisotropy in Tubular Layered Exfoliated KP15 ACS nano 12, 1712-1719 (2018) Spectral Discrimination Sensors Based on Nanomaterials and Nanostructures: A Review IEEE Sensors Journal 21, 4044-4060 (2020) Achieving high efficiency silicon heterojunction solar cells by applying high hydrogen content amorphous silicon as epitaxial-free buffer layers Thin Solid Films 711, 138305 (2020)