个人简介
1997年本科毕业于湘潭大学物理系，2000年获湘潭大学凝聚态物理硕士学位，2003年获北京工业大学材料学博士学位， 2005年从复旦大学物理学博士后流动站出站。
研究领域
侧重新型光电功能材料的设计与应用，包括：
1） 半导体纳米新能源材料设计、制备与应用；
2） 新型纳米场发射冷阴极设计、制备与器件应用；
3） 外场作用下低维体系（量子点、量子线、纳米碳管及石墨烯等）材料设计与预测；
近期论文
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1) Two dimensional Dirac carbon allotropes from graphene, Nanoscale 6 (2), 1113 (2014)
2）Si Doping at GaN Inversion Domain Boundaries: an Interfacial Polar Field for Electrons and Holes Separation.J. Mater Chem. A, 2, 9744（2014)
3) Crystallization Effects of NanocrystallineGaN Films on Field Emission. J. Phys. Chem. C 117, 1518-1523 (2013)
4) From powder to nanowire: a simple and environmentally friendly strategy for optical and electrical GaN nanowire films.Crystengcomm 15, 1626-1634 (2013)
5) Wurtzite-type CuInSe2 for high-performance solar cell absorber: ab initio exploration of the new phase structure. J. Mater. Chem. 22, 21662-21666 (2012)
6) Giant magnetoresistance effect in graphene with asymmetrical magnetic superlattices. Appl. Phys. Lett. 101, 152404 (2012).
7) Order Structures of AlxGa1-xN Alloys: First-Principles Predictions. J. Phys. Chem. C 116, 1282-1285 (2012)
8) Enhanced Field Emission from GaN and AlN Mixed-Phase Nanostructured Film J. Phys. Chem. C 116 (2), 1780-1783 ( 2012)
9) Electron field emission enhanced by geometric and quantum effects from nanostructured AlGaN/GaN quantum wells. Appl. Phys. Lett. 98, 152110 (2011)
10) Strain-induced negative differential resistance in armchair-edge graphenenanoribbons. Appl. Phys. Lett. 98, 082108 (2011)
11) Field Emission Enhancement in Semiconductor Nanofilms by Engineering the Layer Thickness: First-Principles Calculations. J. Phys. Chem. C 114, 11584-11587 (2010)
12) Ultra-Low-Threshold Field Emission from Oriented Nanostructured GaN Films on Si Substrate. Appl. Phys. Lett. 96(9), 092101(2010)
13) Field emission enhancement by the quantum structure in an ultrathin multilayer planar cold cathode. Appl. Phys. Lett.92(14), 142102 (3) (2008)
14) Spin transport in an asymmetrical magnetic superlattice. Phys. Rev. B 74(2), 024417 (5) (2006)
15) Strain-induced Raman-mode shift in single-wall carbon nanotubes: Calculation of force constants from molecular-dynamics simulations. Phys. Rev. B 77(19), 195440 (5) (2008)
16) Anomalous pressure behavior of tangential modes in single-wall carbon nanotubes. Phys. Rev. B 76（3）, 033402 (4) (2007)
17) Pressure-induced Raman-active radial breathing mode transition in single-wall carbon nanotubes. Phys. Rev. B 2007, 75(4), 045425 (5) (2007)
18) Structural enhancement mechanism of field emission from multilayer semiconductor films. Phys. Rev. B, 72(12), 125310 (6) ( 2005)
19) Multipeak characteristics of field emission energy distribution from semiconductors. Phys. Rev. B, 70（19），195305 (6) (2004)
20) Band Bending Mechanism for Field Emission in Wide Band Gap Semiconductors. Appl. Phys. Lett., 81(15), 2782～2784 (2002）
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