近期论文
查看导师新发文章
（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）
[1] Sun Shuxiang, Yangbo, Zhong Yinghui*, Li Yuxiao, Ding Peng, Jin Zhi, Wei Zhichao.Degradation mechanisms of InP-based high-electron-mobility transistors under 1 MeV electron irradiation. Journal of Physics D: Applied Physics, 2020, Accepted.（通讯作者）
[2]Zhong Yinghui, YangBo, Chang Mingming, Ding Peng, Ma Liuhong, Li Mengke, Duan Zhiyong, Yang Jie*, Jin Zhi, Wei Zhichao.Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane. Chinese Physics B, 2020,29(3): 038502.
[3]Zhong Yinghui, Wang Wenbin, Yang Jie, Sun Shuxiang, Chang Mingming, Duan Zhiyong, Jin Zhi*, Ding Peng. An improved empirical nonlinear model for InP-based HEMTs. Solid State Electronics, 2020,164:107613.
[4] Sun Shuxiang#, Ding Peng#, Jin Zhi, Zhong Yinghui*, Li Yuxiao, Wei Zhichao. Effect of electron irradiationfluenceon InP-based high electron mobility transistors. Nanomaterials, 2019, 9(7): 967.（通讯作者）
[5] Sun Shuxiang#, Chang Mingming#, Li Mengke, Ma Liuhong, Zhong Yinghui*, Li Yuxiao, Ding Peng, Jin Zhi, Wei Zhichao. Effect of defects properties on InP-based high electron mobility transistors. Chinese Physics B, 2019,28(7): 078501.（通讯作者）
[6]Sun Shuxiang#, Chang Mingming#, Zhang Chao, Cheng Chao, Li Yuxiao, Zhong Yinghui*, Ding Peng, Jin Zhi, Wei Zhichao. Proton irradiation effect on InP-based high electron mobility transistor by numerical simulation with non-uniform induced acceptor-like defects. Physica Status Solidi- Rapid Research Letters, 2018,12(6):1800027.（通讯作者）
[7]Zhong Yinghui*, Li Kaikai, Li Mengke, Wang Wenbin, Sun Shuxiang, Li Huilong, Ding Peng, Jin Zhi. An improved 16-element small-signal model for InP-based HEMTs. Journal of Infrared and Millimeter Waves, 2018,37(2):171-175.（通讯作者）
[8]Sun Shuxiang, Wei Zhichao, Xia Penghui, Wang Wenbin, Duan Zhiyong, Li Yuxiao, Zhong Yinghui*, Ding Peng, Jin Zhi.Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs. Chinese Physics B, 2018,27(2): 028502.（通讯作者）
[9] Sun Shuxiang, Ma Liuhong, Cheng Chao, Zhang Chao, Zhong Yinghui*, Li Yuxiao, Ding Peng, Jin Zhi. Numerical simulation of the impact of surface traps on the performance of InP-based high electron mobility transistors. Physica Status Solidi A-Applications and Materials Science, 2017, 214(10): 1700322.（通讯作者）
[10]Zhong Yinghui, Wang Wenbin, Sun Shuxiang, Ding Peng, Jin Zhi*. Long-time thermal stability comparison of alloyed and non-alloyed Ohmic contacts for InP-based HEMTs. Physica Status Solidi A-Applications and Materials Science, 2017, 214(11): 1700411.
[11]Zhong Yinghui, Sun Shuxiang, Wang Wenbin, Wang Haili, Liu Xiaoming, Duan Zhiyong, Ding Peng, Jin Zhi*.Two-step gate-recess process combining selective wet-etching and digital wet-etching for InAlAs/InGaAs InP-based HEMTs.Frontiers of Information Technology & Electronic Engineering, 2017, 18(8): 1180-1185.
[12]王海丽，吉慧芳，孙树祥，丁芃，金智，魏志超，钟英辉*，李玉晓.InAlAs/InGaAs/InAlAs量子阱质子辐照损伤机理.西安电子科技大学学报, 2017, 44(4): 151-155.（通讯作者）
[13]Sun Shuxiang, Ji Huifang, Yao Huijuan, Li Sheng, Jin Zhi, Ding Peng, Zhong Yinghui*. Physical modeling of direct current and radio frequency characteristics for InP-based InAlAs/InGaAs HEMTs. Chinese Physics B, 2016, 25(10): 108501.（通讯作者）
[14]Zhong Yinghui, Zang Huaping, Sun Shuxiang, Wang Haili, Li Kaikai, Li Xinjian, Ding Peng, Jin Zhi*. Comparison of single-step and two-step EBL T-gates fabrication techniques for InP-Based HEMT. Chinese Journal of Electronics, 2016, 25(2): 199-202.
[15]Zhong Yinghui, Zang Huaping, Wang Haili, Sun Shuxiang, Li Kaikai, Ding Peng, Jin Zhi*. T-gate fabrication of InP-Based HEMTs using PMGI/ZEP520A/PMGI/ZEP520A stacked resist. Chinese Journal of Electronics, 2016, 25(3): 448-452.
[16]Zhong Yinghui, Yang Jie, Li Xinjian, Ding Peng, Jin Zhi*. Impact of the silicon-nitride passivation film thickness on the characteristics of InAlAs/InGaAs InP-based HEMTs. Journal of the Korean Physical Society, 2015,66(6):1020-1024.
[17]Zhong Yinghui, Li Kaikai, Li Xinjian, Jin Zhi*. A W-band high-gain and low-noise amplifier MMIC using InP-based HEMTs. Journal of Infrared and Millimeter Waves, 2015,34(6): 668-672.
[18]Zhong Yinghui, Wang Xiantai, Su Yongbo, et al. High performance InP-based In0.52Al0.48As /In0.53Ga0.47As HEMTs with extrinsic transconductance of 1052 mS/mm.Journal of Infrared and Millimeter Waves,32(3):193-197, 2013.
[19]Zhong Yinghui, Zhang Yuming, Zhang Yimen, et al.0.15 μm T-gateIn0.52Al0.48As /In0.53Ga0.47AsInP-based HEMT withfmaxof 390 GHz.Chinese Physics B, 22(12):128503-5, 2013.
[20]Zhong Yinghui, Su Yongbo, Jin Zhi, et al. An InGaAs/InP W-band dynamic frequency divider.Journal of Infrared and Millimeter Waves,31(5):393-398, 2012.
[21]Zhong Yinghui, Zhang Yuming, Zhang Yimen, et al. A W-band two-stage cascode amplifier with gain of 25.7 dB.Journal of Semiconductors, 34(12): 125003-5, 2013.
[22]Zhong Yinghui, Wang Xiantai, Su Yongbo, et al. An 88 nm gate-length In0.53Ga0.47As/ In0.52Al0.48As InP-based HEMT withfmaxof 201 GHz.Journal of Semiconductors, 33(7): 39-42, 2012.
[23]Zhong Yinghui, Wang Xiantai, Su Yongbo, et al. Impact of the lateral width of the gate recess on the DC and RF characteristics of InAlAs/InGaAs HEMTs.Journal of Semiconductors, 33(5): 61-65, 2012.
学术会议论文
[1]Liu Hehe, Sun Shuxiang, Zhong Yinghui*, Li Yuxiao, Ding Peng, Jin Zhi, Wei Zhichao. Effects of different energy proton irradiation on DC characteristics of InP-based HEMTs. The 15th IEEE International Conference on Electron Devices and Solid-State Circuits, Xian, China, 12-14 June 2019.（通讯作者）
[2]Sun Shuxiang, Chang Mingming, Zhong Yinghui*, Li Yuxiao, Ding Peng, Jin Zhi. Defects effect on InAlAs/InGaAs High Electron Mobility Transistors. Radecs Workshop 2018 and The 2nd International Conference on Radiation Effects of Electronic Devices,Beijing, China, 17-18 May 2018.（通讯作者）
[3]Zhong Yinghui, Zhang Yuming, Zhang Yimen, et al. A W-band two-stage cascode amplifier with small-signal gain of 25.7 dB.2013 IEEE International Conference of Electron Devices and Solid-State Circuits, 3-5 June 2013, Hong Kong, China, 2013.
[4]Zhong Yinghui, Wang Xiantai, Su Yongbo, Cao Yuxiong, et al.Sub 100 nm In0.53Ga0.47As/In0.52Al0.48As InP-based HEMT withfT=204 GHz,fmax=352 GHz, andgm,max=918 mS/mm.2011 International Symposium on Radio-Frequency Integration Technology (RFIT), Nov.30 2011-Dec. 2 2011, pp: 213-216, Beijing, China, 2011.
[5]钟英辉，张玉明，张义门等. W波段InP HEMT低噪声放大器，第十七届全国化合物半导体材料微波器件和光电器件学术会议, 2012.11.07-10, pp: 326-329，开封, 2012.
京公网安备 11010802027423号