个人简介
1987年出生,博士,特聘副教授,高等研究中心特聘副研究员。
2019年荣获湖南省芙蓉青年学者奖励计划。
2005-2011年在中南大学完成本科及硕士教育;2011年-2016年在澳大利亚国立大学跟随Chennupati Jagadish院士攻读博士学位。2015年获得中国留学生自费奖,2016年毕业于澳大利亚国立大学。主要从事纳米、量子结构的设计及精确外延生长、晶体生长机理、单光子结构设计、光电器件。目前在国际权威期刊Advanced Materials, Nano Lett. ACS Nano, Adv. Funct. Mater.等学术期刊上发表论文20余篇,最高影响因子IF:25。担任Nano Letters等顶级期刊的审稿人。研究合作者分布在加拿大、美国、西班牙、澳大利亚等国家。与澳大利亚建立了定期交流访问的合作机制。
研究课题组气氛活跃,热爱探索新知识并一究到底。希望能找到志同道合的人一起进行一场研究的旅行。期待各位博士生、硕士生及本科生的加入。
教育经历
[1]. 2011.10- 2016.9
澳大利亚国立大学 | 半导体物理 | 博士研究生毕业 | 博士学位 | 物理与数学学院,电子材料工程系
[2]. 2009.9- 2011.10
中南大学 | 材料学 | 硕士研究生毕业 | 硕士学位
[3]. 2005.9- 2009.6
中南大学 | 无机非金属 | 大学本科 | 学士学位
研究方向
[1].外延生长纳米半导体以及制备高精度传感器、柔性电子器件。 智能家居以及各类美好生活的愿景需求是各类型传感器、新型电子器件成为未来生活的必需品。项目计划使用化学气相沉积、有机金属气相外延生长、脉冲激光沉积系统多位一体进行纳米材料(如石墨烯、二维材料、氧化物、III-V族半导体等)全方位设计和合成。探索各类型半导体的生长机制,从下至上,从原子尺度到宏观尺度掌握晶体的生长机制。利用计算和精确实验搭建纳米材料与性能关系的桥梁,掌握背后的物理知识,设计并制备各类新奇的传感器。
[2].低维量子结构在量子信息、量子计算机的应用研究 进入21世纪,研究从纳米科技逐渐过渡到量子时代。摩尔定律的失效,小于10nm芯片的问世,都已经接近传统计算机的极限。量子时代悄然来临。英特尔,微软,IBM,三星等大企业不约而同组建量子计算机研究团队。量子通讯、量子计算机即将不是科幻而在这个世纪中叶成为现实。在低维二维材料、量子半导体中实现高亮度稳定的单光子、量子纠缠态光子源。利用量子光学计算设计单光子源的量子结构并使用尖端科技实现低维量子结构材料、最终实现量子信号源的尖端突破。
[3].使用CVD在Cu箔上的石墨烯、云母、HOPG等二维材料表面上生长以InP为代表的III-V族半导体纳米线 本课题主要使用CVD在Cu箔上的石墨烯、云母、HOPG等二维材料表面上生长以InP为代表的III-V族半导体纳米线;结合各种先进材料测试分析手段(原子力显微镜、扫描电子显微镜、透射电子显微镜等)以及第一性原理计算方法建立III-V族纳米线范德华力外延生长机理(如图3示意),并探索新型异质结材料特有光学性质及其在柔性光电器件之中的应用
近期论文
查看导师新发文章
(温馨提示:请注意重名现象,建议点开原文通过作者单位确认)
[1].2020年发表文章如下:
[2]Long Fang, Xiaoming Yuan, * at al.Direct bilayer growth: a new growth principle for a novel WSe2 homo-junction and bilayer WSe2 growth:Nanoscale,2020,12(6):3715-3722 (IF:6.97)
[3].2019年发表文章如下:
[4]J. Seidl, J. G. Gluschke, X. Yuan, at al.Regaining a Spatial Dimension: Mechanically Transferrable TwoDimensional InAs Nano?ns Grown by Selective Area Epitaxy:Nano letters,2019,19:4666-4677(IF: 12.27)
[5]Iraj Abbasian Shojaei, Samuel Linser, ....,Giriraj Jnawali, Xiaoming Yuan,Smith, LM*.Strong Hot Carrier E?ects in Single Nanowire Heterostructures:Nano Letters,2019,19(8):5062-5069(IF:12.279)
[6]Long Fang, Haitao Chen, Xiaoming Yuan*,Jun He,Shaohua Tao*.Quick Optical Identification of the Defect Formation in Monolayer WSe2 for Growth Optimization:Nanoscale reserach letters,2019,14(1):274 (IF: 3.159)
[7]Naiyin Wang, Xiaoming Yuan, Zhang X*,at al.Shape Engineering of InP Nanostructures by Selective Area Epitaxy:ACS Nano,2019,13(6):7261-7269 (IF:13.9)
[8]Xiaoming Yuan *, Lin Li, Ziyuan Li, Fan Wang,at al.Unexpected bene?ts of stacking faults on the electronic structure and optical emission in wurtzite GaAs/GaInP core/shell nanowires:Nanoscale,2019,11(18):9207-9215
[9]Xutao Zhang,Ziyuan Li,...Xiaoming Yuan,Wei Lu,Chen, PP*,Lu, W.Light-Induced Positive and Negative Photoconductances of InAs Nanowires toward Rewritable Nonvolatile Memory:ACS Appl. Electron. Mater.,2019,1(9):1825-1831
[10].2018年发表文章如下
[11]Xiaoming Yuan, Jiabao Yang, Jun He, Hark Hoe Tan, Chennupati Jagadish.Role of surface energy in nanowire growth:Journal of Physics D: Applied Physics,2018,51(28):283002
[12]Shimin Wang, Yong Du, ...... Xiaoming Yuan, Shuhong Liu.A Thermodynamic Assessment of the Li-Ge System:Journal of Phase Equilibria and Diffusion,2018,39(3):315-323
[13].2017年发表文章如下:
[14]Xiaoming Yuan*, Dhruv Saxena, at al.Strong Amplified Spontaneous Emission from High Quality GaAs1–xSbx Single Quantum Well Nanowires:The Journal of Physical Chemistry C,2017,121(15):8636-8644(IF:4.309)
[15]Xiaoming Yuan, Junnan Ding, Jun He, Biao Hu, Yong Du*.Thermodynamic Reassessment of the C-Ni-Si System Using a Four Sublattice Model for Ordered/Disordered fcc Phases:Journal of Phase Equilibria and Diffusion,2017,38(5):807-813 (IF:1.42)
[16]Xiaoming Yuan*, Yanan Guo, at al.Dopant‐Free Twinning Superlattice Formation in InSb and InP Nanowires:physica status solidi (RRL)–Rapid Research Letters,2017,11(11):1700310 (IF:3.729)
[17]Biao Hu, Xiaoming Yuan, at al.Thermodynamic reassessment of the Ni–Si–Ti system using a four-sublattice model for ordered/disordered fcc phases supported by first-principles calculations:Journal of Alloys and Compounds,2017,693:344-356(IF: 4.175)
[18]Alexander Berg*, Philippe Caroff, Naeem Shahid, Mark N Lockrey, Xiaoming Yuan, at al.Growth and optical properties of In x Ga1?x P nanowires synthesized by selective-area epitaxy:Nano Research,2017,10(2):672-682 (IF:8.515)
[19].2016年发表的文章如下:
[20]Guogang Zhang, Ziyuan Li, Xiaoming Yuan, at al.Single nanowire green InGaN/GaN light emitting diodes:Nanotechnology,2016,27(43):435205 (IF:3.399)
[21]Dhruv Saxena*, Nian Jiang, Xiaoming Yuan, Sudha M*,at al.Design and room-temperature operation of GaAs/AlGaAs multiple quantum well nanowire lasers:Nano letters,2016,16(8):5080-5086 (IF:12.27)
[22].2015年发表的文章如下:
[23]Xiaoming Yuan*, Philippe Caroff, at al.Tunable Polarity in a III–V Nanowire by Droplet Wetting and Surface Energy Engineering:Advanced Materials,2015,27(40):6096-6103(代表作 IF:25)
[24]Ziyuan Li*, Xiaoming Yuan, Lan Fu, Kun Peng, at al.Room temperature GaAsSb single nanowire infrared photodetectors:Nanotechnology,2015,26(44):445202(IF:3.399)
[25]Xiaoming Yuan*, Philippe Caroff, at al.Antimony Induced {112} A Faceted Triangular GaAs1? xSbx/InP Core/Shell Nanowires and Their Enhanced Optical Quality:Advanced Functional Materials,2015,25(33):5300-5308(IF:15.621)
[26]Xiaoming Yuan*, Philippe Caroff, Jennifer Wong-Leung, at al.Controlling the morphology, composition and crystal structure in gold-seeded GaAs 1? x Sb x nanowires:Nanoscale,2015,7(11):4995-5003(IF:6.97)
[27].2015年以前的文章:
[28]Xi Li, Kaiming Cheng, Xiaoming Yuan, Dongdong Zhao, Jinghua Xin, Weiwei Wang, Cong Zhang, Yong Du.Thermodynamic assessment of the Ga–X (X=B, Ca, Sr, Ba) systems supported by first-principles calculations:CALPHAD,2013,43:52-60
[29]Ying Tang, Biao Hu, Jiong Wang, Qiannan Gao, Yong Du*(通讯), Xiaoming Yuan, Dragana ?ivkovi?.Thermodynamic modeling of the La-B and La-Bi systems supported by first-principles calculations:Journal of Phase Equilibria and Diffusion,2013,34(4):297-306
[30]X Yuan*, H H Tan, P Parkinson, J Wong-Leung, at al.Growth and characterization of GaAs1-xSbx nanowires:Optoelectronic and Microelectronic Materials & Dev,2012:141-142