陈斌 - 中国科学院宁波材料技术与工程研究所

个人简介

学习工作经历： 1997年毕业于燕山大学材料学，获学士学位； 2000年毕业于燕山大学材料学，获硕士学位； 2005年毕业于中科院物理研究所，获博士学位； 2005年2月至2008年3月，作为博士后研究员在韩国汉城大学物理系和法国南特大学物理系进行研究工作。 2008年4月进入中科院宁波材料所工作，担任副研究员。主持项目：中国国家自然科学基金、浙江自然科学基金、宁波自然科学基金

研究领域

多铁性单相复合材料的制备、性能和应用

近期论文

查看导师新发文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

1．Bin Chen, Zhenghu Zuo, Yiwei Liu, Qing-Feng Zhan, Yali Xie, Huali Yang, Guohong Dai, Zhixiang Li, Gaojie Xu, and Run-Wei Li. Tunable photovoltaic effects in transparent Pb(Zr0.53,Ti0.47)O3 capacitors. Appl. Phys. Lett. 100 193703 (2012); 2．Zhenghu Zuo, Bin Chen, Qingfeng Zhan, Yiwei Liu, Huali Yang, Zhixiang Li, Gaojie Xu and Run-Wei Li. Preparation and ferroelectric properties of freestanding Pb(Zr,Ti)O3 thin membranes. J. Phys. D: Appl. Phys. 45 185302 (2012); 3．Guohong Dai, Qingfeng Zhan, Yiwei Liu, Huali Yang, Xiaoshan Zhang, Bin Chen and Run-Wei Li. Mechanically tunable magnetic properties of Fe81Ga19 films grown on flexible substrates. Appl. Phys. Lett. 100, 122407 (2012); 4．Zou Cheng, Chen Bin, Zhu Xiao-Jian, Zuo Zheng-Hu, Liu Yi-Wei, Chen Yuan-Fu, Zhan Qing-Feng, and Li Run-Wei. Local leakage current behaviours of BiFeO3 films.Chin. Phys. B. 20.117701(2011).; 5．Bin Chen, Mi Li, Yiwei Liu, Zhenghu Zuo, Fei Zhuge, Qing-Feng Zhan and Run-Wei Li. Effect of top electrodes on photovoltaic properties of polycrystalline BiFeO3 based thin film capacitors. Nanotechology. 22,195201.(2011). 6．Mi Li, Fei Zhuge, Xiaojian Zhu, Kuibo Yin, Jinzhi Wang, Yiwei Liu, Congli He, Bin Chen and Run-Wei Li*, Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches. Nanotechnology, 21,425202(2010). 7．Kuibo Yin, Mi Li, Yiwei Liu, Congli He, Fei Zhuge, Bin Chen, Wei Lu,Xiaoqing Pan, and Run-Wei Li*,Resistance switching in polycrystalline BiFeO3 thin films. Appl. Phys. Lett.97,042101(2010). 8．D. J. Kim, J. Y. Jo, T. H. Kim, S. M. Yang, B. Chen, Y. S. Kim, and T. W. Noh, Observation of inhomogeneous domain nucleation in epitaxial Pb(Zr,Ti)O3 capacitors, Appl. Phys. Lett., 91 132903 (2007). 9．B. Chen, H. Yang, J. Miao, B. Xu, X. G. Qiu, and B. R. Zhao, Leakage current of Pt/((Ba0.7Sr0.3)TiO3 interface with dead layer, J. Appl. Phys. 97 24106 (2005). 10．B. Chen, H. Yang, J Miao, L Zhao, B Xu, X. L. Dong, L. X. Cao, X. G. Qiu, B. R. Zhao, Structural and electrical characteristics of Pb(Zr0.53,Ti0.47)O3 thin films deposited on Si (100) substrate, Chin. Phys. Lett. 22 697 (2005). 11．X. L. Li, B. Chen, H. Y. Jing, H. B. Lu, B. R. Zhao, Z. H. Mai, Q. J. Jia, Experimental evidence of the "dead layer" at Pt/BaTiO3 interface, Appl. Phys. Lett., 87 222905 (2005). 12．B. Chen, H. Yang, L. Zhao, J. Miao, X. Y. Qi, B. Xu, X. G. Qiu, X. F. Duan and B. R. Zhao, Thickness and dielectric constant of dead layer in Pt/(Ba0.7Sr0.3)TiO3/YBa2Cu3O7-X capacitor, Appl. Phys. Lett., 84 583 (2004). 13．H. Yang, B. Chen, J. Miao, L. Zhao, B. Xu, X. L. Dong, L. X. Cao, X. G. Qiu, and B. R. Zhao, Positive temperature of resistivity in Pt/(Ba0.7Sr0.3)TiO3/YBa2Cu3O7-x capacitors, Appl. Phys. Lett., 85 5019 (2004). 14．H. Yang, J. Miao, B. Chen, L. Zhao, B. Xu, X. L. Dong, L. X. Cao, X. G. Qiu, and B. R. Zhao, Abnormal temperature dependence of dielectric constant in (Ba0.7Sr0.3)TiO3 thin films, Appl. Phys. Lett., 85 4106 (2004). 15．J. Miao, W. R. Chen, L. Zhao, B. Chen, H. Yang, W. Peng, X. H. Zhu, B. Xu, L. X. Cao, X. G. Qiu, and B. R. Zhao, Enhanced dielectric properties of (Ba1-xSrx)TiO3 thin film grown on (La1-xSrx)MnO3 bottom layer, J. Appl. Phys. 96 6578 (2004). 16．H. Yang, B. Chen, K. Tao, X. G. Qiu, B. Xu and B. R. Zhao, Temperature- and field-dependent leakage current of Pt/(Ba0.7Sr0.3)TiO3 interface, Appl. Phys. Lett., 83 1611 (2003). 17．H. Yang, K. Tao, B. Chen, X. G. Qiu, B. Xu and B. R. Zhao, Leakage mechanism of (Ba0.7Sr0.3)TiO3 thin films in the low-temperature range, Appl. Phys. Lett., 81 4817 (2002).