赵晓龙 - 中国科学技术大学

个人简介

经历：武汉大学与中国科学院微电子研究所联合培养博士（2015-2019），导师为蒋昌忠教授与刘明院士。自2019年7月起任职于中国科学技术大学信息科学技术学院微电子系。

研究领域

宽禁带半导体器件（紫外探测器等）、忆阻器件、和选通器件。

近期论文

查看导师新发文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

X. Zhao, X. Zhang, D. Shang, Z. Wu, X. Xiao*, R. Chen, C. Tang, J. Liu, W. Li, H. Lv, C. Jiang*, Q. Liu*, and M. Liu, Uniform, Fast, and Reliable LixSiOy-based Resistive Switching Memory, IEEE Electron Device Letters, 2019, 40, 554. X. Zhao, J. Ma, X. Xiao, Q. Liu*, L. Shao, D. Chen, S. Liu, J. Niu, X. Zhang, Y. Wang, R. Cao, W. Wang, Z. Di*, H. Lv, S. Long, and M. Liu, Breaking Current-Retention Dilemma in Cation-based Resistive Switching Device Utilizing Graphene with Controlled Defects, Advanced Materials, 2018, 30, 1705193. X. Zhao, R. Wang, X. Xiang*, C. Lu, F. Wu, R. Cao, C. Jiang, and Q. Liu*, Flexible Cation-based Threshold Selector for Resistive Switching Memory Integration, SCIENCE CHINA Information Sciences, 2018, 61, 060413. S. Si, W. Li, X. Zhao, M. Han, Y. Yue, W. Wu, S. Guo, X. Zhang, Z. Dai, X. Wang, X. Xiao*, and C. Jiang, Significant Radiation Tolerance and Moderate Reduction in Thermal Transport of a Tungsten Nanofilm by Inserting Monolayer Graphene, Advanced Materials, 2017, 29, 1604623. X. Zhao, S. Liu, J. Niu, L. Liao, Q. Liu*, X. Xiao, H. Lv, S. Long, W. Banerjee, W. Li, S. Si, and M. Liu, Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer, Small, 2017, 13, 1603948. S. Liu, N. Lu, X. Zhao, H. Xu, W. Banerjee, H. Lv, S. Long, Q. Li, Q. Liu*, and M. Liu, Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory, Advanced Materials, 2016, 28, 10623. Q. Liu, X. Zhao, MOX for NVM on graphene and 2D materials (chapter of an Elsevier book named Metal Oxides for Non-volatile Memory), 2019 in process.

学术兼职

担任Applied Physics A 、Microelectronics Engineering、Journal of the Electron Devices Society等国际知名期刊审稿人。