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研究领域

1. 硅基单自旋快速光电调控及与光学谐振腔的耦合 该研究方向的目标是利用光学微腔将两个距离较远的单自旋耦合起来实现量子逻辑门操作,然后实现多个远距离耦合自旋系统,每个单自旋可以实现高保真度的读出及调控,从而提供一种可扩展的量子计算系统。 2. 半导体纳米器件内的精密测量 固体材料中的单个离子或者缺陷,可以被用做原子级的探针,来探测电场、应力、磁场、以及周围的电荷和自旋。这个可以被用来研制纳米尺度的微电子器件的探测器以及搭建耦合的电荷/自旋量子系统。 3. 基于新型半导体材料的光电量子信息器件研究 单个自旋的探测技术,可以读出单个自旋的状态,同时通过了一种高分辨率的单自旋光谱探测手段。目前该技术只在硅基FinFET器件中实现,通过信号模拟,我们设计了更加优化的纳米结构,这有望得到更灵敏的探测,并推广到其他材料体系中。

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Millisecond electron spin coherence time for erbium ions in silicon arXiv:2307.10021 (2023). Fast Thermodynamic Study on a Silicon Nanotransistor at Cryogenic Temperatures Nano Letters (2024). Photoionisation detection of a single Er3+ ion with sub-100-ns time resolution National Science Review 11, nwad134 (2024). Observing Er3+ Sites in Si With an In Situ Single-Photon Detector Phys. Rev. Applied 19, 014037 (2023). Spectral broadening of a single Er3+ ion in a Si nanotransistor Phys. Rev. Applied 18, 034018 (2022). Zeeman and hyperfine interactions of a single 167Er3+ ion in Si Phys. Rev. B 105, 235306 (2022). Single site optical spectroscopy of coupled Er3+ ion pairs in silicon Quantum Science and Technology 7, 025019 (2022). Time-Resolved Photoionization Detection of a Single Er3+ Ion in Silicon Nano Letters, 22, 396 (2022). High-fidelity single-shot readout of single electron spin in diamond with spin-to-charge conversion Nature Communications 12, 1529 (2021). Ultrashallow junction electrodes in low-loss silicon microring resonators Phys. Rev. Applied 15, 044014 (2021). High-resolution spectroscopy of individual erbium ions in strong magnetic fields Phys. Rev. B 102, 155309 (2020). Control of Circular Photogalvanic Effect of Surface States in the Topological Insulator Bi2Te3 via Spin Injection ACS Appl. Mater. Interfaces 12, 18091 (2020) Giant photoinduced anomalous Hall effect of the topological surface states in three dimensional topological insulators Bi2Te3 Appl. Phys. Lett. 116, 141603 (2020) Single rare-earth ions as probe of electric field and strain in nano-transistors Nano Letters 19, 5025-5030 (2019) Helicity-dependent photocurrent of the top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators Sb2Te3 Phys. Rev. B 100, 235108 (2019) Inverse spin Hall effect induced by linearly polarized light in the topological insulator Bi2Se3 Optics Express 26, 4832-4841 (2018) Photoinduced Inverse Spin Hall Effect of Surface States in the Topological Insulator Bi2Se3 Nano Letters, 17, 7878 (2017) Optical addressing of an individual erbium ion in silicon Nature, 497, 91–94 (2013) Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN Nano Letters, 13, 2024 (2013) [Patent] Optical addressing of individual targets in solids PCT international patent, WO/2014/089621 (publication date 19.06.2014)

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