龙世兵 - 中国科学技术大学

个人简介

主持国家自然科学基金、科技部（863、973、重大专项、重点研发计划）、中科院等资助科研项目15项。在IEEE EDL等国际学术期刊和会议上发表论文100余篇，SCI他引3000余次，H因子30，2篇第一作者IEEE EDL论文入选ESI高引论文（累计引用居前1%的论文）。获得/申请专利100余项，其中9项转移给国内最大的集成电路制造企业中芯国际，74项授权/受理发明专利许可给武汉新芯。经历： 1995.9-2002.3 北京科技大学，学士，应用物理；硕士，材料物理 2002.4-2005.6 中国科学院微电子研究所，博士，微电子学与固体电子学 2005.7-2018.3 中国科学院微电子研究所，助理研究员、副研究、研究员 2018.3-至今中国科学技术大学微电子学院，教授，常务副院长

研究领域

从事微纳加工、阻变存储器、超宽禁带半导体器件领域的研究。

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

Qiming He, Wenxiang Mu, Bo Fu, Zhitai Jia, Shibing Long*, Zhaoan Yu, Zhihong Yao, Wei Wang, Hang Dong, Yuan Qin, Guangzhong Jian, Ying Zhang, Huiwen Xue, Hangbing Lv, Qi Liu, Minghua Tang, Xutang Tao*, and Ming Liu*. Schottky Barrier Rectifier Based on (100) β-Ga2O3 and its DC and AC Characteristics. IEEE Electron Device Letters, 2018, 39(4), 556-559. Yuanjie Lv, Xingye Zhou*, Shibing Long*, Xubo Song, Yuangang Wang, Shixiong Liang, Zezhao He, Tingting Han, Xin Tan, Zhihong Feng, Hang Dong, Xuanze Zhou, Yangtong Yu, Shujun Cai, Member, IEEE, Ming Liu. Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2. IEEE Electron Device Letters, 2018, 39. DOI: 10.1109/LED.2018.2881274 Qiming He, Wenxiang Mu, Hang Dong, Shibing Long*, Zhitai Jia, Hangbing Lv, Qiu Liu, Minghua Tang, Xutang Tao* and Ming Liu. Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics. Applied Physics Letters, 2017, 110, 093503. Yu Li, Shibing Long*, Qi Liu, Hangbing Lv, and Ming Liu*. Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two-dimensional layered materials. Small, 2017, 13(35), 1604306. Shibing Long, Xiaojuan Lian, Tianchun Ye, Carlo Cagli, Luca Perniola, Enrique Miranda, Ming Liu, and Jordi Suñé. Cycle-to-cycle intrinsic RESET statistics in HfO2-based unipolar RRAM devices. IEEE Electron Device Letters, 2013, 34(5), 623-625. Shibing Long, Xiaojuan Lian, Carlo Cagli, Luca Perniola, Enrique Miranda, Ming Liu, and Jordi Suñé. A model for the set statistics of RRAM inspired in the percolation model of oxide breakdown. IEEE Electron Device Letters, 2013, 34(8), 999-1001.

学术兼职

IEEE EDL/TED、Adv. Mater.等多种国际著名学术期刊的审稿人。