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代表性著作
Yabin Sun, Research on the Radiation Effects and Compact Model of SiGe HBT, ISBN: 978-981-10-4611-7, Springer Publishers.
代表性学术论文
Chao Wang, Junfeng Hu, Ziyu Liu*, Xiaojin Li, Yanling Shi and Yabin Sun*, TCAD simulations of Reconfigurable Field-Effect Transistor with Embedded-Fin-Contact to Improve ON-current, IEEE Transactions on Electron Devices 2024
Hongbo Ye, Junfeng Hu, Chao Wang, Xiaojin Li, Yanling Shi, Zhiagng Mao, and Yabin Sun*, Novel Reconfigurable Transistor with Extended Source/Drain beyond 3nm Technology Node, IEEE Transactions on Electron Devices 2024
Junfeng Hu, Chao Wang, Ziyu Liu*, Xiaojin Li, and Yanling Shi, Yabin Sun*, Novel Reconfigurable Field-Effect Transistor with Surrounded Source/Drain to Improve ON-State Current, IEEE Transactions on Electron Devices, 2024, 71(1), 873-878, https://ieeexplore.ieee.org/document/10339290
Junfeng Hu, Chao Wang, Yabin Sun*, Ziyu Liu*, Xiaojin Li, and Yanling Shi, Novel Reconfigurable Field Effect Transistor with Arch-Shaped Gate to Improve ON-State Current, IEEE Transactions on Electron Devices 2023, 70(10), 4980-4986 https://ieeexplore.ieee.org/document/10223710
Xiaoqiao, Yabin Sun*, Ziyu Liu*, Xiaojin Li, and Yanling Shi, Compact Modeling of Process Variations in Nanosheet Complementary FET (CFET) and Circuit Performance Predictions, IEEE Transactions on Electron Devices 2023, 70(7), 3935-3942 https://ieeexplore.ieee.org/document/10138802
Rui Zhang, Yabin Sun*, Ziyu Liu*, Yun Liu, Xiaojin Li, and Yanling Shi, Novel 3D Fin-RFET with Dual-Doped Source/Drain to Improve ON-state Current, IEEE Transactions on Electron Devices 2022, 69(12), 6569-6575 https://ieeexplore.ieee.org/document/9940288
Xiaoqiao Yang, Yabin Sun*, Ziyu Liu*, Xiaojin Li, Yun Liu, Yanling Shi, 3-D Modeling of Fringe Gate Capactiance in Complementary FET(CFET), IEEE Transactions on Electron Devices 2022, 69(11), 5978-5984 https://ieeexplore.ieee.org/document/9912378
Ziyu Liu*, Han Jiang, Ziyuan Zhu, Yain Sun*, Lin Chen, Qingqing Sun, Thermal-Mechanical and Signal Reliability of a New Differentiated TSV, IEEE Transactions on Electron Devices 2022, 69(10), 5766-5772 https://ieeexplore.ieee.org/document/9868336
Zhangjun Shi, Xiaojin Li*, Yabin Sun, Yanling Shi, Co-optimization between Static and Switching Characteristics of LDMOS with P-type Trapezoidal Gate Embedded in Drift Region, IEEE Transactions on Electron Devices 2022, 69(8), pp.4102-4208 https://ieeexplore.ieee.org/document/9793565
Xiaoqiao Yang, Xianglong Li, Yabin Sun*, Ziyu Liu*, Yunliu, Xiaojin Li and Yanling Shi, Impact of Process Variation on Nanosheet Gate-all-around Complementary FET (CFET), IEEE Transactions on Electron Devices,2022, 69(7), pp.4029~4036 https://ieeexplore.ieee.org/document/9786007
Yang Shen#, Zuoyuan Dong#, Yabin Sun#, Hao Guo#, Fan Wu, Xianglong Li, Jun Tang, Jun Liu, Xing Wu, He Tian, Tian-Ling Ren, The trend of 2D transistors toward integrated circuits: Scaling down and new mechanisms, Advanced Material, 2022, https://onlinelibrary.wiley.com/doi/10.1002/adma.202201916
Yabin Sun, Meng Wang, Xianglong Li, Shaojian Hu, Ziyu Liu, Xiaojin Li, Yun Liu and Yanling Shi, Improved MEOL and BEOL Parasitic-Aware Design Technology Co-Optimization for 3 nm Gate-All-Around Nanosheet Transistor, IEEE Transactions on Electron Devices, 2022, 69(2), pp.462-468 https://ieeexplore.ieee.org/document/9664270
Fan Wu, He Tian, Yang Shen, Zhan Hou, Jie Ren, Guangyang Gou, Yabin Sun, Yi Yang, Tian-Ling Ren, Vertical MoS2 transistors with sub-1-nm gate lengths, Nature, 2022, 603, 259-264 https://www.nature.com/articles/s41586-021-04323-3
Yabin Sun, Gaohengbin, Xianglong Li, Xiaoqiao Yang, Ziyu Liu, Xiaojin Li and Yanling Shi, Impact of Process Fluctuations on RF Small-Signal Parameter of Gate-All-Around Nanosheet Transistor Beyond 3 nm Node, IEEE Transactions on Electron Devices 2022, 69(1), 31-38 https://ieeexplore.ieee.org/document/9640239
Yabin Sun, Xianglong Li, Ziyu Liu, Yanling Shi, Xiaojin Li, Vertically Stacked Nanosheets Tree-type Reconfigurable Transistor with Improved On-Current, IEEE Transactions on Electron Devices 2022, 69(1), 370-374 https://ieeexplore.ieee.org/document/9629261
Renhua Liu, Xiaojin Li, Yabin Sun, Fei Li, Yanling Shi, Thermal Coupling Among Channels and Its DC Modeling in sub-7-nm Vertically Stacked Nanosheet Gate-All-Around Transistor, IEEE Transactions on Electron Devices 2021, 68(12), 6563-6570 https://ieeexplore.ieee.org/document/9604070
Yabin Sun, Jinyan Shao,Ziyu Liu, Teng Wang, Yanling Shi, Xiaojin Li, Evaluation of Single-Event-Transient Effects in Reconfigurable Field Effect Transistor Beyond 3 nm Technology Node, IEEE Transactions on Electron Devices, 2021, 68(12), 6001~6006 https://ieeexplore.ieee.org/document/9576088
Lan Liu, Chunsen Liu, Lilai Jiang, Jiayi Li, Yi Ding, Shuiyuan Wang, Yu-Gang Jiang, Yabin Sun, Jianlu Wang, Shiyou Chen, David Wei Zhang, Peng Zhou, Ultrafast non-volatile flash memory based on van der Waals heterostructures, Nature Nanotechnology, 2021, 16, 874–881 https://www.nature.com/articles/s41565-021-00921-4
Xianglong Li, Yabin Sun*, Xiaojin Li and Yanling Shi, Impact of Process Fluctuations on Reconfigurable Silicon Nanowire Transistor, IEEE Transactions on Electron Devices, 2021, 68(2), 885-891 https://ieeexplore.ieee.org/document/9321221
Xianglong Li, Yabin Sun*, Xiaojin Li, Yanling Shi, Analysis of Metal Work-Function Modulation Effect in Reconfigurable Field Effect Transistor, IEEE Transactions on Electron Devices, 2020, 67(9), 3745-3752 https://ieeexplore.ieee.org/document/9145649
Renhua Liu, Xiaojin Li, Yabin Sun, Yanling Shi, A Vertical Combo Spacer to Optimize Electrothermal Characteristics of 7-nm Nanosheet Gate-All-Around Transistor, IEEE Transactions on Electron Devices, 2020,67(6), 2249-2254 https://ieeexplore.ieee.org/document/9085955
Xianglong Li, Yabin Sun*, Xiaojin Li, Yanling Shiet.al, Electronic Assessment of Novel Arch-shaped Asymmetrical Reconfigurable Field-Effect Transistor, IEEE Transactions on Electron Devices, 2020,67(4),1894-1901 https://ieeexplore.ieee.org/document/9018250
Yan Yao, Yabin Sun*, Xiaojin Li, Yanling Shi et.al, Novel Reconfigurable Field-effect Transistor with Asymmetric Spacer Engineering at Drain Side, IEEE Transactions on Electron Devices, 2020, 67(2),751-757 https://ieeexplore.ieee.org/document/8959371
Junya Sun, Xiaojin Li*, Yabin Sun*, and Yanling Shi, Impact of Geometry, Doping, Temperature, and Boundary Conductivity on Thermal Characteristics of 14-nm Bulk and SOI FinFETs, IEEE Transactions on Device and Materials Reliability, 2020, 20(1), 119-127 https://ieeexplore.ieee.org/document/8951282
Xiaojin Li, Jian Qing,Yabin Sun*, Yan Zeng, Yanling Shi and Yuheng Wang, Analytical Layout Dependent NBTI Degradation Modeling Based on Non-Uniformly Distributed Interface Traps, IEEE Transactions on Device and Materials Reliability 2018, 18(3), 397-403 https://ieeexplore.ieee.org/document/8396308
Xiaojin Li, Jian Qing,Yabin Sun*,Yan Zeng, Yanling Shi and Yuheng Wang, Linear and Resolution Adjusted On-chip Aging Detecting of NBTI Degradation, IEEE Transactions on Device and Materials Reliability, 2018, 18(3), 383-390 https://ieeexplore.ieee.org/document/8385177
Yabin Sun, Jun Fu, Ji Yang, Jun Xu, Yudong Wang, Wei Zhou, Jie Cui, Gaoqing Li, Zhihong Liu, An Improved Small-Signal Model for SiGe HBT Under Off-state, Derived from Distributed Network and Corresponding Model Parameter Extraction, IEEE Transactions on Microwave Theory and Techniques, 63(10), 3131-3141, Oct. 2015 https://ieeexplore.ieee.org/document/7219472
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