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杂志 （SCI收录，*为通信作者）
Ling Tong, Jing Wan*, Kai Xiao, Jian Liu, Jingyi Ma, Xiaojiao Guo, Lihui Zhou, Xinyu Chen, Yin Xia, Sheng Dai, Zihan Xu, Wenzhong Bao* & Peng Zhou*, Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide, Nature Electronics, 6, 37–44 (2023). https://doi.org/10.1038/s41928-022-00881-0
Haihua Wang, Jian Liu, Jiahao Wei, Kai Xiao, Yingxin Chen, Yu-Long Jiang* and Jing Wan*, Au Nanoparticles/HfO2/Fully Depleted Silicon-on-Insulator MOSFET Enabled Rapid Detection of Zeptomole COVID-19 Gene with Electrostatic Enrichment Process, IEEE Transactions on Electron Devices, Early access (2023)，10.1109/TED.2022.3233544
YingXin Chen, Kai Xiao, YaJie Qin*, FanYu Liu* and Jing Wan*, A Compact Artificial Spiking Neuron Using a Sharp-Switching FET With Ultra-Low Energy Consumption Down to 0.45 fJ/spike, IEEE Electron Device Letters, 44, 160-163 (2023)，10.1109/LED.2022.3219465
J. Liu, Xue-Jiao Wang, Yu-Long Jiang* and Jing Wan*, Floating Source/Drain Enabled Linear–Linear–Logarithmic Self-Adaptive One-Transistor Active Pixel Sensor, IEEE Transactions on Electron Devices. 69, 4976-4980 (2022)
Xue-Jiao Wang, Zhao-Yang Li, Zhao-Zhang Yan, Lei-Gang Chen, Zhong-Hua Li, Yu-Long Jiang* and Jing Wan*, DDDMOSFET Performance Improvement by Gate Oxide Removal Followed by Silicided Source/Drain Formation in Gate Slots, IEEE Transactions on Electron Devices. 69, 5368-5372 (2022)
Jiahao Wei, Haihua Wang, Tian Zhao, Yu-Long Jiang* and Jing Wan*, A New Compact MOSFET Model Based on Artificial Neural Network with Unique Data Preprocessing and Sampling Techniques, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (IEEE TCAD), 10.1109/TCAD.2022.3193330
Sherzod Khaydarov, Kai Xiao, Yajie Qin*, Fanyu Liu* and Jing Wan*，High Gain Pseudo - inverter Based on Silicon-on-Insulator with Ambipolar Transport , IEEE Transactions on Electron Devices. 69, 4075–4080 (2022)，10.1109/TED.2022.3178676
Haihua Wang, Yu-Long Jiang*, Jing Wan*, Significant Performance Improvement of MicroRNA-375 Detection by Modulation of Au Nanoparticle Distribution Using SOI MOSFET, IEEE Electron Device Letters, 43, 128-130 (2022), 10.1109/LED.2021.3129347
Zhao-Yang Li, Xue-Jiao Wang, Han-Lun Cai, Zhao-Zhang Yan, Yu-Long Jiang*, Jing Wan*, “Difference between Atomic Layer Deposition TiAl and Physical Vapor Deposition TiAl in Threshold Voltage Tuning for Metal Gated NMOSFETs”, IEEE Electron Device Letters, 42, 1830-1833, (2021), 10.1109/LED.2021.3124801
Xinyu Chen , Yufeng Xie , Yaochen Sheng , Hongwei Tang , Zeming Wang , Yu Wang , Yin Wang , Fuyou Liao , Jingyi Ma , Xiaojiao Guo , Ling Tong , Hanqi Liu , Hao Liu , Tianxiang Wu , Jiaxin Cao , Sitong Bu , Hui Shen , Fuyu Bai , Daming Huang , Jianan Deng , Antoine Riaud , Zihan Xu , Chenjian Wu , Shiwei Xing , Ye Lu , Shunli Ma , Zhengzong Sun , Zhong-Ying Xue , Professor Zengfeng Di , Xiao Gong , David Wei Zhang , Peng Zhou*, Jing Wan*, Wenzhong Bao*, wafer-Scale Functional Circuits Based on Two Dimensional Semiconductors with Fabrication Optimized by Machine Learning, Nature Communication, 12, 5953 (2021) 10.1038/s41467-021-26230-x
Jing Chen, Junqiang Zhu, Ping Li, Xiao-Ming Wu, Ran Liu, Jing Wan*, Tian-Ling Ren*, Fabricating In-Plane MoTe p-n Homojunction Photodetector Using Laser-Induced p-Type Doping, IEEE Transactions on Electron Devices. 68, 9, 4485-4490 (2021)， 10.1109/TED.2021.3099082
Jing Chen, Ping Li, Ran Liu, Xiao-Ming Wu, Jing Wan*, Tian-Ling Ren, Reconfigurable MoTe2 field-effect-transistors and its application in compact CMOS circuits, IEEE Transactions on Electron Devices. 68, 9, 4748-4753 (2021)，10.1109/TED.2021.3096493
J. Liu, Y. -F. Cao, X. -J. Wang, Y. -L. Jiang*, J. Wan*, A Novel One-transistor Active Pixel Sensor with Tunable Sensitivity, IEEE Electron Device Letters, 42, 927, (2021) doi: 10.1109/LED.2021.3073930.
J. Liu, S. Cristoloveanu, J.Wan* , A Review on the Recent Progress of SOI‐based Photodetectors. Phys. Status Solidi A. 218，200751, (2021) https://doi.org/10.1002/pssa.202000751；60周年创刊封面文章
J. Liu, K. Xiao, J.-N. Deng, A. Zaslavsky, S. Cristoloveanu, Fy. Liu*, J. Wan*, Optimization of Photoelectron In-Situ Sensing Device in FD-SOI, IEEE Journal of the Electron Devices Society. 187, 9, (2021)
Yaochen Sheng, Xinyu Chen, Fuyou Liao, Yin Wang, Jingyi Ma, Jianan Deng, Zhongxun Guo, Sitong Bu, Hui Shen, Fuyu Bai, Daming Huang, Jianlu Wang, Weida Hu, Lin Chen, Hao Zhu, Qingqing Sun, Peng Zhou, David Wei Zhang, Jing Wan*, Wenzhong Bao* ,Gate stack engineering in MoS2 field-effect transistor for reduced channel doping and hysteresis effect, 7, 2000395, Advanced electronic material, (2021), 10.1002/aelm.202000395
M. Arsalan, J. Liu, A. Zaslavsky, S. Cristoloveanu, J.Wan*, Deep-Depletion Effect in SOI Substrates and its Application in Photodetectors With Tunable Responsivity and Detection Range, IEEE Transactions on Electron Devices. 3256, 67, (2020). 10.1109/TED.2020.2998453
Jing Chen, Junqiang Zhu, Qiyuan Wang, Jing Wan*, Ran Liu, Homogeneous 2D MoTe2 CMOS Inverters and p–n Junctions Formed by Laser-Irradiation-Induced p-Type Doping, 2001428, 16, Small, (2020). 10.1002/smll.202001428
Fuyou Liao, Jianan Deng, Xinyu Chen, Yin Wang, Xinzhi Zhang, Jian Liu, Hao Zhu, Lin Chen, Qingqing Sun, Weida Hu, Jianlu Wang, Jing Zhou, Peng Zhou, David Wei Zhang, Jing Wan*, Wenzhong Bao*, A Dual-gate MoS? Photodetector Based on Interface Coupling Effect, Small, 16, 1904369, (2020)
J. Liu, K.-M. Zhu, A. Zaslavsky, S. Cristoloveanu, and J. Wan*, Photodiode with Low Dark Current Built in Silicon-on-Insulator Using Electrostatic Doping, Solid State Electron, 168, 107733 (2020) 10.1016/j.sse.2019.107733
Jianan Deng, Lingyi Zong, Mingsai Zhu, Fuyou Liao, Yuying Xie, Zhongxun Guo, Jian Liu, Bingrui Lu, Jianlu Wang, Weida Hu, Peng Zhou, Wenzhong Bao* and Jing Wan*, MoS2/HfO2/Silicon-on-insulator Dual-photogating Transistor with Ambipolar Photoresponsivity for High-resolution Light Wavelength Detection, Advanced Functional Materials, 29, 1906242 (2019)
Yong-Feng Cao, M. Arsalan, J. Liu, Yu-Long Jiang* and J. Wan*, A Novel One-Transistor Active Pixel Sensor With In-Situ Photoelectron Sensing in 22 nm FD-SOI Technology. IEEE Electron Device Letters. 40, 738-741 (2019) 封面文章
Fuyou Liao, Yaocheng Sheng, Zhongxun Guo, Hongwei Tang, Yin Wang, Lingyi Zong, Xinyu Chen, Antoine Riaud, Jiahe Zhu, Yufeng Xie, Lin Chen, Hao Zhu, Qingqing Sun, Peng Zhou, Xiangwei Jiang, Jing Wan*, Wenzhong Bao*, and David Wei Zhang, MoS2 dual-gate transistors with electrostatically doped contacts, Nano Research, 12, 2515-2519, (2019)
J. Liu, XY. Cao, BR. Lu, YF. Chen, A. Zaslavsky, S. Cristoloveanu and J. Wan*, Dynamic coupling effect in Z2-FET and its application for photodetection, IEEE JEDS, 7, 846-854, (2019)
JN. Deng, ZX. Guo, YW. Zhang, XY. Cao, SM. Zhang, YC. Sheng, H. Xu, WZ. Bao* and J. Wan*, MoS2/silicon-on-insulator Heterojunction Field-Effect-Transistor for High-performance Photodetection. IEEE Electron Device Letters. 40, 423-426 (2019)
Wu Zan, Qiaochu Zhang, Hu Xu, Fuyou Liao, Zhongxun Guo, Jianan Deng, Jing Wan*, Hao Zhu, Lin Chen, Qingqing Sun, Shijin Ding, Peng Zhou, Wenzhong Bao* and David Wei Zhang, Large capacitance and fast polarization response of thin electrolyte dielectrics by spin coating for two-dimensional MoS2 devices, Nano Research, 11, 3739 (2018).
X-Y. Cao, W-S. Lin, H-B. Liu, J-N. Deng, M. Arsalan, K-M. Zhu, Y-F. Chen, J. Wan*, “A SOI Photodetector with Field-Induced Embedded Diode Showing High Responsivity and Tunable Response Spectrum by Backgate”, IEEE Transactions on Electron Devices, 65, 5412-5418, (2018).
JN. Deng, JH. Shao, BR. Lu, YF. Chen, A. Zaslavsky, S. Cristoloveanu, M. Bawedin and J. Wan*, Interface Coupled Photodetector (ICPD) with High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI), IEEE JEDS, 6, 557-564（2018）.
会议文章 (EI收录，*为通信作者)
Jing Jing Chou, Jian Liu, Jing Wan*, Novel Photodetectors Based on SOI and Two-dimensional Materials, IEEE IWJT, 2021. 邀请报告
Yingxin Chen, Jianan Deng, Qianqian Huang, Wenzhong Bao*, and Jing Wan*，Light-modulated Subthreshold Swing Effect in a MoS2-Si Hetero MOSFET，IEEE CSTIC 2021 最佳会议文章 EI: 20213510831268
JiaHao. Wei, Tian. Zhao, Zheng. Zhang and Jing Wan*，Modeling of CMOS Transistors from 0.18μm Process by Artificial Neural Network, IEEE CSTIC 2021 20213510831419
YX. Chen, K. Xiao, HH. Wang, J. Wan*, The Impact of Incident Wavelength and Incident Intensity on Light-modulated Subthreshold Swing Effect, IEEE ASICON 2021
Jiaxing Zuo, Jing Wan*, Novel Photodetectors and Image Sensors based on SOI Substrate, IEEE ASICON 2021，邀请报告
Wei Mao, Hua Fang, Zheng Zhang, Yi-Fei Huang, Jing-Xiao Zhang, Bi-Jian Lan, Jing Wan*，Automatic design of analog integrated circuit based on multi-objective optimization，IEEE ICSICT 2020 20210309772673
K. Xiao, J. Liu, X. Liu and J. Wan*，Gas sensing CMOS transistors based on SOI substrate, IEEE ICSICT 2020 20210309772642
K. Xiao, J. Liu, Wei Wu, Zheng Xu and J. Wan*, Design of a novel one transistor-DRAM based on bulk silicon substrate, In IEEE CSTIC, 2020. 最佳会议文章 20210309773849
K. Xiao, J. Liu, JN. Deng, YL. Jiang, WZ. Bao, A. Zaslavsky, S. Cristoloveanu, X. Gong, and J. Wan*, Novel Semiconductor Devices Based on SOI Substrate, In IEEE CSTIC, 2020. 20210309773943
JH. Wei, W. Mao, H. Fang, Z. Zhang, JX. Zhang, BJ. Lan and J. Wan*, Advanced MOSFET Model Based on Artificial Neural Network, In IEEE CSTIC, 2020. 20210309773834
J. Liu, M. Arsalan, A. Zaslavsky, S. Cristoloveanu and J. Wan*, Optimization of photoelectron in-situ sensing device in FD-SOI, In IEEE S3S, 2019, 1-4. 20210809937762
KM. Zhu, JH. Wei and J. Wan*, Negative capacitance GaN HEMT with improved subthreshold swing and transconductance. In IEEE S3S, 2019, 1-4. 20210809937712
J. Wan*, WZ. Bao, J. Deng, X. Cao, H. Liu, B. Lu, Y. Chen, A.Zaslavsky, S. Cristoloveanu and M. Bawedin. A review on Z2-FET and PISD based on Silicon-on-insulator substrate. in IEEE ICTA. 2019, p. 1-4. 邀请报告
J. Wan*, WZ. Bao, JN. Deng, J. Liu, M. Arsalan, ZX. Guo and XY. Cao, et al., Novel photodetectors and image sensors based on silicon-on-insulator substrate in IEEE ICICDT, 2019 邀请报告 20193507381987
J. Liu and J. Wan*, Z2-FET: Application in Image Sensing and Self-aligned Structure for Further Scaling Down, IEEE IWJT, 2019 邀请报告 20193707433930
J. Wan*, WZ. Bao, J. Deng, X. Cao, H. Liu, B. Lu, Y. Chen, A.Zaslavsky, S. Cristoloveanu and M. Bawedin. ICPD: a SOI-based photodetector with high responsivity and tunable response spectrum. in The 14th IEEE ICSICT. 2018, p. 1-4. 邀请报告 20193007228335
J. Liu, XY. Cao, BR. Lu, YF. Chen, A. Zaslavsky, S. Cristoloveanu, M. Bawedin and J. Wan*, Z2-FET: a multi-functional device used for photodetection, CSTIC, 2019 最佳会议文章 20193007228335
J. Wan*, J. Deng, X. Cao, H. Liu, B. Lu, Y. Chen, A.Zaslavsky, S. Cristoloveanu and M. Bawedin. Novel photodetector based on FD-SOI substrate with interface coupling effect. in The 18th International Workshop on Junction Technology (IEEE IWJT 2018). 2018, p. 1-4. 邀请报告 EI索引号20190406415186
Xiao-Ying Cao, Wen-Song Lin, Jia-Nan Deng, Hong-Bin Liu, Kun-Ming Zhu, Muhammad Arsalan, Jing Wan*, A Novel photodetector with the embedded field-induced p-n photodiode in the SOI Substrate, in The 14th IEEE ICSICT. 2018, p. 1-4. EI索引号 20190406414541
KM. Zhu, JN. Deng, XY. Cao, J. Wan*, Ar RIE to improve the source/drain contact in GaN HEMT, in The 14th IEEE ICSICT. 2018, p. 1-4. EI索引 号20190406415157
J. Liu, XY. Cao, BR. Lu, YF. Chen, A. Zaslavsky, S. Cristoloveanu, M. Bawedin and J. Wan*, A New Photodetector on SOI, in IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S). 2018, p. 1-4. EI索引 号20191206667769
M. Arsalan, XY. Cao, BR. Lu,YF. Chen, A. Zaslavsky, S. Cristoloveanu, M. Bawedin and J. Wan*, A highly sensitive photodetector based on deep-depletion effects in SOI transistors, in IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S). 2018, p. 1-4. EI索引号 20191206667750
J. Deng, J. Shao, B. Lu, Y. Chen, A. Zaslavsky, S. Cristoloveanu, M. Bawedin and J.Wan*. A Novel Photodetector Based on the Interface Coupling Effect in Silicon-on-Insulator MOSFETs. in IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S). 2017, p. 1-4. EI索引号 20182205266610
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