个人简介
教育经历
2002.92005.6 金乡二中
2009.92014.6 山东大学原子与分子物理理学博士学位
2005.92009.6 山东大学应用物理学理学学士学位
工作经历
2017.9至今 山东大学物理学院
2014.82016.4 Jacobs University博士后
2016.52017.8 Leipzig University博士后
2017.9至今 山东大学物理学院教授博导在职
研究领域
半导体器件模拟
低维材料
第一性原理计算
计算材料物理
近期论文
查看导师新发文章
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Liang, Y., Shen, S. Y., Huang, B. B., Dai, Y.* Ma, Y. D.*, (2021): Intercorrelated ferroelectrics in 2D van der Waals materials. Materials Horiz. Accepted.
Peng, R., Ma, Y. D.*, Zhang, S., Kou, L. Z., Huang, B. B., Dai, Y.* (2020): Self-doped p–n junctions in two-dimensional In2X3 van der Waals materials. Materials Horiz. 7, 504-510.
Zhang, T., Ma, Y. D.*, Yu, L., Huang, B. B., Dai, Y.* (2019): Direction-control of anisotropic electronic behaviors via ferroelasticity in two-dimensional α-MPI (M = Zr, Hf). Materials Horiz. 6, 1930-1937.
Peng, R., Ma, Y. D.*, He, Z. L., Huang, B. B., Kou, L. Z., Dai, Y.* (2019): Single-layer Ag2S: A two-dimensional bi-directional auxetic semiconductor. Nano Lett. 19,1227.
Zhao, P., Ma, Y. D.*, Lv, X. S., Li, M. M., Huang, B. B., Dai, Y.* (2018): Two-dimensional III2-VI3 materials: Promising photocatalysts for overall water splitting under infrared light spectrum. Nano Energy 51, 533-538.
Ma, Y. D., Kuc, A., Heine. T.* (2017): Single-layer Tl2O: A metal-shrouded 2D semiconductor with high electronic mobility. J. Am. Chem. Soc. 139 (34), 11694–11697.
Ma, Y. D., Kuc, A., Jing, Y., Philipsen, P., Heine. T.* (2017): Haeckelite NbS2 two-dimensional crystal - a diamagnetic high mobility semiconductor with Nb4+ ions. Angew. Chem. Int. Ed. 56, 1- 5.
Ma, Y. D.*, Dai, Y., Kou, L. Z., Frauenheim, T., Heine. T.* (2015): Robust two-dimensional topological insulators in methyl-functionalized bismuth, antimony and lead bilayer films. Nano Lett. 15, 1083-1089.
Ma, Y. D., Dai, Y., Guo, M., Niu, C. W., Zhu, Y. T., Huang, B. B. (2012): Evidence of the existence of magnetism in pristine VX2 monolayers (X = S, Se) and their strain-induced tunable magnetic properties. ACS Nano 6, 1695-1701.