刘文杰 - 广东工业大学 - 信息工程学院

个人简介

刘文杰，女，广东工业大学“青年百人计划”特聘副教授。主要从事微纳光电材料与器件方面的研究。在 ACS Nano， Applied Physics Letters，Nanotechnology，Optics Express, Scientific Reports，IEEE Photonics Technology Letters 等SCI 期刊上发表论文30余篇。申请和授权多项发明专利。主持国家自然科学基金面上项目，国家自然科学基金、青年科学基金项目、广东省自然科学基金面上项目、中央高校项目等，作为主要研究人员参与国家自然科学基金重大研究计划培育项目、国家自然科学基面上项目、广东省自然科学基金重点项目，广东省重点研发计划等。工作经历及教育背景： 2018.09-至今广东工业大学信息工程学院副教授 2015 -2018 中山大学光电材料与技术国家重点实验室副研究员 2014-2015 国家知识产权局专利局专利审查协作广东中心专利审查员 2009-2014 厦门大学微电子学与固体电子学工学博士 2005-2009 厦门大学物理学理学学士科研项目： 1、国家自然基金面上项目，61975037，主持； 2. 广东省自然科学基金面上项目，主持； 3. 国家自然基金青年项目，61604179，主持； 4、中央高校科研业务费，17lgpy0，主持 5、广东工业大学“青年百人计划”科研启动金，主持； 6、国家自然科学基金重大研究计划培育项目，91850106，参与； 7、国家自然科学基金面上项目，11474235，参与；教学活动：本科课程：《信息论基础》

研究领域

1) 微纳半导体光电器件，主要包括半导体发光二级管、半导体激光器等 2) 柔性衬底的微纳光电子材料及器件研究 3) 表面等离激元的纳米光子学理论及器件

近期论文

查看导师新发文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

[1] W. J. Liu, Q. S. Zou, C. Q. Zheng, C. J. Jin*, Metal-Assisted Transfer Strategy for Construction of 2D and 3D Nanostructures on an Elastic Substrate, ACS Nano, 2019, 13(1): 440~448 [2] W. J. Liu, X. L. Hu*, Y. J. Liu*, Performance enhancement of GaN-based near-ultraviolet flip-chip light-emitting diodes with two-step insulating layer scheme on patterned sapphire substrate, Journal of Materials Science: Materials in Electronics, 2019, 30:3013-3018 [3] W. J. Liu, X. L. Hu, Q. S. Zou, S. Y Wu, C. J. Jin*, Low-loss integrated electrical surface plasmon source with ultra-smooth metal film fabricated by polymethyl methacrylate ‘bond and peel’ method Nanotechnology, 2018, 29, 24LT01; [4] W. J. Liu, X. L. Hu*, Y. J. Liu*, (2018). Optical and thermal performance of nitride-based thin-film flip-chip light-emitting diodes. Journal of Materials Science: Materials in Electronics, 29(23), 19825-19829. [5] W. J. Liu, S. Yang, G. H. Xiao, X. Y. She, J. F. Wang, C. J. Jin*, Mechanically tunable sub-10nm metal gap by stretching PDMS substrate , Nanotechnology, 2017.2.17, 28(7): 0~075301 [6] W. J. Liu, X. L. Hu, L. Y. Ying, S. Q. Chen, J. Y. Zhang, H. Akiyama, Z. P. Cai, B. P. Zhang*, "On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers", Scientific Reports, 5 (2015) 9600 [7] W. J. Liu, X. L. Hu, L. Y. Ying*, Room temperature continuous wave lasing of electrically injected GaN-based vertical cavity surface emitting lasers, Applied Physics Letters, 2014, 104:251116. SCI， [8] W. J. Liu, S. Q. Chen, X. L. Hu et al., Low threshold lasing of optically pumped GaN-based VCSELs with sub-nanometer roughness polishing, IEEE Photonics Technology Letters, 2013, 25:2014-2017. [9] W. J. Liu, X. L. Hu, J. Y. Zhang, G. E. Weng, X. Q. Lv, H. J. Huang, M. Chen, X. M. Cai, L. Y. Ying and B. P. Zhang*. "Low-Temperature Bonding Technique for Fabrication of High-Power GaN-Based Blue Vertical Light-Emitting Diodes", Optical Materials, (2012) 34:1327-1329. [10] X. L. Hu, F. A. Xiao, Q. B. Zhou, Y. D. Zheng , W. J. Liu,*. High-luminous efficacy green light-emitting diodes with InGaN/GaN quasi-superlattice interlayer and Al-doped indium tin oxide film. Journal of Alloys and Compounds. 2019, 794:137-143. [11] Z. X. Chen, W. J. Liu,* W. Wan*, et al. "Improving the extraction efficiency of planar GaN-based blue light-emitting diodes via optimizing indium tin oxide nanodisc arrays", IEEE: Journal of Display Technology, 12 (2016) 1588-1593 [12] Z. X. Chen, W. J. Liu,* W. Wan, et al. "Performance of GaN-Based LEDs with Nanopatterned Indium Tin Oxide Electrode", Journal of nanomaterials, (2016) 8202405； [13] Q. S. Zou, W. J. Liu, Y. Shen, C. J. Jin. “Flexible plasmonic modulators induced by the thermomechanical effect”, Nanoscale, (2019) DOI:10.1039/C9NR04068D [14] Chaoqun Zheng, Yang Shen, Mingkai Liu, W. J. Liu, Shaoying Wu, and Chongjun Jin*, Layer-by-Layer Assembly of Three-Dimensional Optical Functional Nanostructures, DOI: 10.1021/acsnano.9b00549 Publication Date (Web): April 24, 2019 [15] Wanguo Liu, Yang Shen, W. J. Liu, and Chongjun Jin* Magnetically induced Stark-like splitting and asymmetric refractive index effect in plasmonic nanostructures, Physics of Plasmas 24, 052505 (2017) [16] L. Y. Ying, W. J. Liu, X. L. Hu, et al. "Control of Optical Loss in GaN-based Planar Cavities", Superlattices and Microstructures, 88 (2015) 561-566. [17] X. L. Hu, W. J. Liu, G. E. Weng et al., Fabrication and Characterization of High Quality Factor GaN-based Resonant-cavity Blue Light-emitting Diodes, IEEE Photonics Technology Letters, 2012, 24:1472-1474. [18] X. L. Hu, J. Y. Zhang, W. J. Liu, et al., Resonant-cavity Blue Light-emitting Diodes Fabricated by Two-step Substrate Transfer Technique, Electronics Letters, 2011, 47:17. [19] X. L. Hu, J. Y. Zhang, J. Z. Shang, W. J. Liu, et al., The Exciton-longitudinal-optical-phonon Coupling in InGaN/GaN Single Quantum Well with Various Cap Layer Thicknesses, Chinese Physics B, 2010, 19:117801. [20] L.Y. Ying, X.L. Hu, W. J. Liu, J.Y. Zhang, B.P. Zhang*, H.C. Kuo, Control of optical loss in GaN-based planar cavities, Superlattices and Microstructures, 2015,88:561 [21] Y. P. Zeng, W. J. Liu, G. E. Weng, W. R. Zhao, H. J. Zuo,J. Yu, J. Y. Zhang, L. Y. Ying, B. P. Zhang*, "Effect of In diffusion on the property of blue light-emitting diodes". Chinese Physics Letters, 32（2015）064207 [22] J. Y. Zhang, L. Y. Ying*, M. Chen, W. J. Liu, J. Yu and B. P. Zhang*, “Improved Heat Dissipation in GaN-Based Thin-Film Light-Emitting Diode with Lateral-Electrode Configuration”, Science of Advanced Materials, 7 (2015) 283-286. [23] A. Asahara*, S. Q. Chen*, T. Ito*, M. Yoshita, W. J. Liu, B. P. Zhang, T.Suemoto and H. Akiyama, “Direct generation of 2-ps blue pulses from gain-switched InGaN VCSEL assessed by up-conversion technique”, Scientific Reports, 4 (2014) 6401. [24] S. Q. Chen, T. Ito, A. Asahara, M. Yoshita, W. J. Liu, J. Y. Zhang B. P. Zhang*, T. Suemoto and H. Akiyama, “Spectral dynamics of picosecond gain-switched pulses from nitride-based vertical-cavity surface-emitting lasers”, Sciencefic Reports, 4 (2014) 4325. [25] X. M. Cai, Y. Wang, B. H. Chen, M. M. Liang, W. J. Liu, J. Y. Zhang, X. Q. Lv, L. Y. Ying and B.P.Zhang*,"Investigation of InGaN p-i-n homojunction and heterojunction solar cells",IEEE Photonics Technology Letters, 25 (2013) 59-62. [26] M. Chen, W. J. Liu, L. E. Cai, J. Y. Zhang, L. Sun, M. M. Liang, X. L. Hu, X. M. Cai, F. Jiang, X. Q. Lv, L. Y. Ying, Z. R. Qiu and B.P.Zhang*. "Fabrication of Vertical-structured GaN-Based Light-Emitting Diodes Using Auto-Split Laser Lift-Off Technique", Electrochemical and Solid State Letters, 1(2012) Q26-Q28. [27] J. Y. Zhang, W. J. Liu, M. Chen, X. L. Hu, X. Q. Lv, L. Y. Ying and B. P. Zhang*, "Performance Enhancement of GaN-based Light Emitting Diodes by Transfer from Sapphire to Silicon Substrate using Double-transfer Technique", Nanoscale Research Letters, 7 (2012) 244. [28] X. Q. Lv, J. Y. Zhang, L. Y. Ying, W. J. Liu, X. L. Hu, B. P. Zhang*, Z. R. Qiu, S. Kuboya, K. Onabe, "Well-width dependence of the emission-linewidth in ZnO/MgZnO quantum wells", Nanoscale Research Letters 7 (2012) 605. [29] X. Q. Lv, J. Y. Zhang, W. J. Liu, X. L. Hu, M. Chen and B. P. Zhang*, "Optical Properties of ZnO/MgZnO Quantum Wells with Graded Thickness" , Journal of Physics D: Applied Physics, 44 (2011) 365401. [30] X. M. Cai, S. W. Zeng, X. Li, J. Y. Zhang, S. Lin, A. K. Ling, M. Chen, W. J. Liu, S. X. Wu and B. P. Zhang*. "Dependence of the Property of InGaN p-i-n Solar Cells on the Light Concentration and Temperature", IEEE Transactions on Eletron Devices, 58 (2011) 3905-3911.