近期论文
查看导师新发文章
（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）
Everett X. Wang, Juncheng Zou, Gengping Xue、Yijun Liu, and Qun Fan,” Development of efficient nonlinear benchmark bicycle dynamics for control applications”, IEEE Transaction on Intelligent Transportation Systems, 2015.
Ying Xiang， Yi-Kun Liu， Zhi-Yong， Zhang Hong-Jun， You Tian Xia， Everett Wang and Zheng-Dong Cheng,” Observation of the photorefractive effects in bent-core liquid crystals”, OPTICS EXPRESS,2013.
Ming-Ya Xu, Yi-Kun Liu, Ying Xiang,Tian Xia, Everett Wang and Zheng-Dong Cheng,” A fast light-induced grating in bent-core nematic liquid crystals with in-plane switching”, Applied Physics Letters,2013.
Everett Wang, Juncheng Zou,Yijun Liu, Qun FanAnd Xiang Ying,” Symbolic derivation of nonlinear benchmark bicycle dynamics with holonomic and nonholonomic constraints”, 16TH IEEE Intelligent Transportation System Conference,2013.
Ying Xiang, Yi-Kun Liu, Yong-Hai Chen, Yu-Bing Guo, Ming-Ya Xu, Zhen Ding , Tian Xia Jia-Hui Wang, Yi-Wu Song , Ming-Ze Yang, Everett Wang， Yu-Hong Song . Shun-Lin Yang , Guang-Quan She,” Investigation of the geometrical effect on photoelectric properties of nano-ZnO with doped liquid crystal technique”, Applied Physics A,2012.
E. Wang, P. Matagne, L. Shifren, B. Obradovic, R. Kotlyar, S. Cea, M. Stettler, M.D. Giles, “Physics of hole transport in strained silicon MOSFET inversion layers”, IEEE Transactions on Electron Devices, Vol. 53, No. 8, August 2006, P. 1840.
S. Dey, M. Agostinelli, C. Prasad, X. Wang, and L. Shifren, “Effects of hot carrier stress on reliability of strained-si mosfets ”, IEEE International Reliability Physics Symposium, pp. 461-464, San Jose, California, 2006
L. Shifren, X. Wang, P. Matagne, B. Obradovic, C. Auth, S. Cea, T. Ghani, J. He, T. Hoffman, R. Kotlyar, Z. Ma, K. Mistry, R. Nagisetty, R. Shaheed, M. Stettler, C. Webber, and M.D. Giles, "Driver current enhancement in p-type metal-oxide-semiconductor field-effect transistors under shear uniaxial stress", Applied physics letters. Vol. 85, No. 25, 2004, P. 6188
E. Wang, P. Matagne L. Shifren, B. Obradovic, R. Kotlyar, S. Cea, J. He, Z. Ma, R. Nagisetty, S. Tyagi, M. Stettler, and M.D. Giles, “Quantum mechanical calculation of hole mobility in silicon layers under arbitrary stress”, IEEE IEDM’04 P. 147, San Francisco, 2004
S. Cea, M. Armstrong, C. Auth, T. Ghani, M.D. Giles, T. Hoffmann, R. Kotlyar, P. Matagne, K. Mistry, R. Nagisetty, B. Obradovic, R. Shaheed, L. Shifren, M. Stettler, S. Tyagi, X. Wang, C. Weber, K. Zawadzki, “Front end stress modeling for advanced logic technologies”, IEEE IEDM’04 P. 963, San Francisco, 2004
R. Kotlyar, M.D. Giles, P. Matagne, B. Obradovic, L. Shifren, M. Stettler, E. Wang, “Inversion Mobility and gate leakage in high-k/metal gate MOSFETs”, IEEE IEDM’04 P. 391, San Francisco, 2004
M.D. Giles, M. Armstrong, C. Auth, S.M. Cea, T. Ghani, T. Hoffmann, R. Kotlyar, P. Matagne, K. Mistry, R. Nagisetty, B. Obradovic, R. Shaheed, L. Shifren, M. Stettler, S. Tyagi, X. Wang, C. Weber, K. Zawadzki, “Understand Stress enhanced Performance in Intel 90nm CMOS technology”, 2004. Symposium on technology. PP. 118 - 119
B. Obradovic, P. Matagne, L. Shfren, X. Wang, M. Stettler, J. He and M.D. Giles, “A physically-based analytic model for stress-induced hole mobility enhancement”, International Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on Computational Electronics 2004 PP. 26 – 27
Paul Packan Mark Doczy, Rafael Rios, Tahir Ghani, Brian Doyle, Everett Wang, "Understanding Fundamental Tradeoffs in Metal Gate MOS Devices", Intel Process Technology Conference, San Francisco, CA. 2000
E. Wang, P. Packan, M. Giles, R. Rios and F, Leon, "Application of
Quantum Modeling in Deep Submicron/Ultra-thin Technologies", Invited Talk, NASA Device Simulation Workshop, Mountain View, CA, May, 1999
W. Shih, E. Wang, S. Jallepalli, F. Leon, C. Maziar and A. Tasch, "Modeling gate leakage current in nMOS structures due to tunneling through an ultra-thin oxide", Solid State Electronics. Vol. 42, No. 6, 1998
K. Seshan, D. Scharfetter, B. Johnson, T. Marieb and E. Wang, "Bi-Axial Uni-Axial Stress Effects on P865 Device Parameters", Intel Process Technology Conference 98', Oct.12-13, 1998, San Francisco, CA. Abstract appears in Proceeding page 41-44.
E. Wang, D. Scharfetter, P. Aminzadeh, M. Alavi, F. Leon and W. Shih, "Modeling of Reverse Temperature Dependence of Substrate Current for Deep Submicron MOSFETs with Scaled Voltage Supply", Intel Process Technology Conference 98', Oct.12-13, 1998, San Francisco, CA. Abstract appears in Proceeding page 77-80.
E. Wang, M. Stettler, S. Yu and C. Maziar, "Application of Cumulant Expansion to the Modeling of Non-local Effects in Semiconductor Devices", International Workshop on Computational Electronics VI, Sep. 19-21, 1998, Osaka, Japan
E. Wang and F, Leon, "Device Simulation Requirements in Industrial Environment", Invited Talk, NASA Device Simulation Workshop, Mountain View, CA, 1997
E. Wang, M. Giles, S. Yu, F. Paco, A. Hiroki, and S. Odanaka, "Recursive M-tree Method for 3-D Adaptive Tetrahedral Mesh Refinement and Its Application to Brillouin Zone Discretization", SISPAD'96, Sep. 2-4, 1996, Tokyo, Japan
Ghetti, X. Wang, F. Venturi and F. Leon, "Stability Issues in Self-consistent Monte Carlo-Poisson Simulation", Simulation of Semiconductor Devices and Processes, Vol. 6, Edited by H. Pichler, Sep. 1995, p. 388
京公网安备 11010802027423号