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徐健.寻北仪系统的挠性陀螺伺服电路设计[J],计算机测量与控制,2022,10:1353-1355
王德君.宽带隙半导体SiC器件表面界面基础问题研究进展[A],第一届全国宽禁带半导体学术及应用技术会议,2022,97-98
王德君.宽带隙半导体SiC材料与器件基础问题研究进展[A],第十七届全国半导体物理学术会议,2022,76-78
王德君.干法刻蚀对增强型GaN MOSFET的影响[A],59th JSAP spring meeting,2022,176-176
密荣荣.林区火灾监测报警系统设计及实现[J],测控技术,2022,8:37-40,44
朱祥宇.条纹集电极CIGBT的特性仿真研究[J],电力电子技术,2022,3:74-76
刘冰冰.氢氮等离子体表面预处理改善SiO2/SiC界面特性[A],第一届全国宽禁带半导体学术及应用技术会议,2022,118-119
王晓琳.氮氢混合等离子体处理对SiC MOS电容可靠性的影响[J],固体电子学研究与进展,2022,36(1):71-77
刘沙沙.氮钝化SiC MOS界面特性的Gray-Brown法研究[J],固体电子学研究与进展,2022,3:211-214
王德君.Development of Enhancement-mode GaN MOSFETs on AlGaN/GaN Heterostructure[A],GaN Materials and Application Symposium, CHInano 2013,2022
王德君.Device isolation for GaN MOSFETs with boron ion implantation[A],ISPlasma 2013(5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials),2022
王德君.Devices isolation for GaN MOSFETs on AlGaN/GaN heterostructure[A],the 60th JSAP Spring Meeting,2022
王德君.Effects of Vanadium-compensated Concentration onthe Electrical Characteristics of 6H-SiC Photocon...[A],2012 IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia,2022,1508-1510
Wang, Qingpeng.Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabrica...[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2022,30(6)
Huang, Lingqin.Effects of Low Temperature Electronic Cyclotron Resonance Hydrogen Plasma Treatment and Anneali...[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2022,51(8)
Huang, Lingqin.Effects of surface properties on barrier height and barrier inhomogeneities of platinum contact...[J],APPLIED PHYSICS LETTERS,2022,103(3)
Zhu, Qiaozhi.Electrical and physical properties of 4H-SiC MOS interface with electron cyclotron resonance mi...[J],PHYSICA B,2022,432:89-95
Liu, Bingbing.Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-an...[J],APPLIED SURFACE SCIENCE,2022,355:59-63
李硕.Fabrication of metallic charge transfer channel between photoanode Ti/Fe2O3 and cocatalyst CoOx...[J],Journal of Materials Chemistry A,2022,4(42):16661-16669
Jiang, Y..Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2022,29(5)
He, Miao.First-principles study of advanced nuclear materials: Defect behavior and fission products in U-S...[A],International Symposium on Advanced Material Research, ISAMR 2017,2022,753 KEM:134-140
王德君.First-principles study of advanced nuclear materials: Defect behavior and fission products in U-S...[J],KEY ENGINEERING MATERIALS,2022,753:134-140
Zhang H.P..Forward block characteristic of a novel anti-ESD RF SOI LIGBT with a buried P-type layer[A],2011 China-Japan Joint Microwave Conference, CJMW 2011,2022,454-457
徐善国.Forward Block characteristic of a novel RF SOI LDMOS with a Buried P-type layer[A],International Silicon on Insulator (SOI) Conference,2022
王德君.Forward Block characteristic of a novel SOI LDMOS with a Buried P-type layer[A],2010 IEEE International SOI Conference,2022,88-89
王德君.GaN MOSFET with Boron Trichloride-Based Dry Recess Process[A],11th APCPST (Asia Pacific Conference on Plasma Science and Technology),2022,66-66
Jiang, Y..GaN MOSFET with boron trichloride-based dry recess process[J],Journal of physics Conference series,2022,441(1)
Wang, Qingpeng.Gate-first GaN MOSFET based on dry-etching-assisted non-annealing ohmic process[J],Applied Physics Express,2022,8(4)
Zhang Haipeng.High voltage InGaN/GaN/AlGaN RTD suitable for ESD protection applications of GaN/InGaN-based de...[A],2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA),2022,2018-July
王德君.Device isolation for GaN MOSFETs with boron ion implantation[A],ISPlasma 2013(5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials),2022
Jiang, Ying.Improvement of device isolation using field implantation for GaN MOSFETs[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2022,31(3)
王德君.Devices isolation for GaN MOSFETs on AlGaN/GaN heterostructure[A],the 60th JSAP Spring Meeting,2022
王德君.Effects of Vanadium-compensated Concentration onthe Electrical Characteristics of 6H-SiC Photocon...[A],2012 IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia,2022,1508-1510
Zhu, Qiaozhi.Improvement of SiO2/4H-SiC interface properties by electron cyclotron resonance microwave nitro...[J],APPLIED PHYSICS LETTERS,2022,103(6)
Wang, Qingpeng.Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabrica...[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2022,30(6)
Li, Wenbo.Insight into the initial oxidation of 4H-SiC from first-principles thermodynamics[J],Physical review B Condensed matter and materials physics,2022,87(8)
Huang, Lingqin.Effects of Low Temperature Electronic Cyclotron Resonance Hydrogen Plasma Treatment and Anneali...[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2022,51(8)
Wang, Qingpeng.Influence of Dry Recess Process on Enhancement-Mode GaN Metal-Oxide-Semiconductor Field-Effect ...[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2022,52(1,SI)
王德君.Influence of Dry Recess Process on Enhancement-mode GaN MOSFET[A],4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials,2022,54-54
Huang, Lingqin.Effects of surface properties on barrier height and barrier inhomogeneities of platinum contact...[J],APPLIED PHYSICS LETTERS,2022,103(3)
Huang, Haiyun.Improved magnetic sensitivity of CMOS vertical Hall device by using partial implantation techniqu...[A],2022,60(1):45-50
Zhu, Qiaozhi.Electrical and physical properties of 4H-SiC MOS interface with electron cyclotron resonance mi...[J],PHYSICA B,2022,432:89-95
王德君.Improved magnetic sensitivity of CMOS vertical Hall device by using partial implantation techniqu...[J],ECS transactions,2022,60(1):45-50
Liu, Bingbing.Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-an...[J],APPLIED SURFACE SCIENCE,2022,355:59-63
杨超.Interfacial traps and mobile ions induced flatband voltage instability in 4H-SiC MOS capacitors...[J],JOURNAL OF PHYSICS D APPLIED PHYSICS,2022,52(40)
李硕.Fabrication of metallic charge transfer channel between photoanode Ti/Fe2O3 and cocatalyst CoOx...[J],Journal of Materials Chemistry A,2022,4(42):16661-16669
Zhao T..Integrated passive filters based on silicon substrate for SiP application[A],2013 IEEE 15th Electronics Packaging Technology Conference, EPTC 2013,2022,510-515
Jiang, Y..Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2022,29(5)
Huang, Lingqin.Low resistance Ti Ohmic contacts to 4H-SiC by reducing barrier heights without high temperature...[J],APPLIED PHYSICS LETTERS,2022,100(26)
He, Miao.First-principles study of advanced nuclear materials: Defect behavior and fission products in U-S...[A],International Symposium on Advanced Material Research, ISAMR 2017,2022,753 KEM:134-140
Yin, Zhipeng.Low-temperature re-oxidation of near-interface defects and voltage stability SiC MOS capacitors[J],APPLIED SURFACE SCIENCE,2022,531
王德君.First-principles study of advanced nuclear materials: Defect behavior and fission products in U-S...[J],KEY ENGINEERING MATERIALS,2022,753:134-140
杨超.Interface properties and bias temperature instability with ternary H-Cl-N mixed plasma post-oxi...[J],APPLIED SURFACE SCIENCE,2022,488:293-302
Zhang H.P..Forward block characteristic of a novel anti-ESD RF SOI LIGBT with a buried P-type layer[A],2011 China-Japan Joint Microwave Conference, CJMW 2011,2022,454-457
Cai, Jian.Low Temperature Solid-State-Diffusion Bonding for Fine-Pitch Cu/Sn/Cu Interconnect[A],IEEE 65th Electronic Components and Technology Conference (ECTC),2022,2015-July:1616-1623
徐善国.Forward Block characteristic of a novel RF SOI LDMOS with a Buried P-type layer[A],International Silicon on Insulator (SOI) Conference,2022
王德君.Temperature dependency of GaN MOSFETs on AlGaN/GaN heterostructure[A],the 40th International Symposium on Compound Semiconductors,2022
王德君.Forward Block characteristic of a novel SOI LDMOS with a Buried P-type layer[A],2010 IEEE International SOI Conference,2022,88-89
Huang, Lingqin.Temperature dependent electrical characteristics of Pt Schottky barriers fabricated on lightly ...[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2022,54(11)
王德君.GaN MOSFET with Boron Trichloride-Based Dry Recess Process[A],11th APCPST (Asia Pacific Conference on Plasma Science and Technology),2022,66-66
王德君.Transition region study of SiO2/4H-SiC interface by ADXPS[J],Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,2022,29(5):944-949
Jiang, Y..GaN MOSFET with boron trichloride-based dry recess process[J],Journal of physics Conference series,2022,441(1)
Zhang H..Vertical gate RF SOI LIGBT for SPICs with significantly improved latch-up immunity[J],VLSI DESIGN,2022,2011
Wang, Qingpeng.Gate-first GaN MOSFET based on dry-etching-assisted non-annealing ohmic process[J],Applied Physics Express,2022,8(4)
Zhang H..Vertical gate RF SOI LIGBT without latch-up susceptibility[A],2009 International Semiconductor Device Research Symposium, ISDRS '09,2022
Wu, Zijian.Wafer-Level Hermetic Package by Low-Temperature Cu/Sn TLP Bonding with Optimized Sn Thickness[J],JOURNAL OF ELECTRONIC MATERIALS,2022,46(10):6111-6118
Zhang Haipeng.High voltage InGaN/GaN/AlGaN RTD suitable for ESD protection applications of GaN/InGaN-based de...[A],2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA),2022,2018-July
Zhai, Jiali.Visible-light-induced photoelectric gas sensing to formaldehyde based on CdS nanoparticles/ZnO ...[J],SENSORS AND ACTUATORS B CHEMICAL,2022,147(1):234-240
Jiang, Ying.Improvement of device isolation using field implantation for GaN MOSFETs[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2022,31(3)
李硕.Work function engineering derived all-solid-state Z-scheme semiconductor-metal-semiconductor sy...[J],RSC Advances,2022,6(71):66783-66787
Zhu, Qiaozhi.Improvement of SiO2/4H-SiC interface properties by electron cyclotron resonance microwave nitro...[J],APPLIED PHYSICS LETTERS,2022,103(6)
Li, Wenbo.Insight into the initial oxidation of 4H-SiC from first-principles thermodynamics[J],Physical review B Condensed matter and materials physics,2022,87(8)
Huang, Haiyun.A compact behavioral simulation model for CMOS vertical hall-effect devices[A],2022,60(1):33-38
王德君.A Compact Behavioral Simulation Model for CMOS Vertical Hall-effect Devices[J],ECS transactions,2022,60(1):33-38
Wang, Qingpeng.Influence of Dry Recess Process on Enhancement-Mode GaN Metal-Oxide-Semiconductor Field-Effect ...[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2022,52(1,SI)
王德君.Influence of Dry Recess Process on Enhancement-mode GaN MOSFET[A],4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials,2022,54-54
Wei, Tiwei.A 3D Integration Testing Vehicle with TSV Interconnects[A],14th International Conference on Electronic Materials and Packaging (EMAP),2022
Huang, Haiyun.Improved magnetic sensitivity of CMOS vertical Hall device by using partial implantation techniqu...[A],2022,60(1):45-50
王德君.Improved magnetic sensitivity of CMOS vertical Hall device by using partial implantation techniqu...[J],ECS transactions,2022,60(1):45-50
Wu, Qiannan.Acid-treated Ti4+ doped hematite photoanode for efficient solar water oxidation-Insight into su...[J],JOURNAL OF ALLOYS AND COMPOUNDS,2022,782:943-951
杨超.Interfacial traps and mobile ions induced flatband voltage instability in 4H-SiC MOS capacitors...[J],JOURNAL OF PHYSICS D APPLIED PHYSICS,2022,52(40)
Wang, Junqiang.Activation of electroplated-Cu surface via plasma pretreatment for low temperature Cu-Sn bondin...[J],APPLIED SURFACE SCIENCE,2022,384:200-206
Haipeng Zhang.A GaN/InGaN/AlGaN MQW RTD for versatile MVL applications with improved logic stability[J],Journal of Semiconductors,2022,39(7):7400401-7400411
Zhao T..Integrated passive filters based on silicon substrate for SiP application[A],2013 IEEE 15th Electronics Packaging Technology Conference, EPTC 2013,2022,510-515
Huang, Haiyun.A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics[J],SENSORS,2022,15(10):27359-27373
Huang, Lingqin.Low resistance Ti Ohmic contacts to 4H-SiC by reducing barrier heights without high temperature...[J],APPLIED PHYSICS LETTERS,2022,100(26)
Yin, Zhipeng.Low-temperature re-oxidation of near-interface defects and voltage stability SiC MOS capacitors[J],APPLIED SURFACE SCIENCE,2022,531
杨超.Interface properties and bias temperature instability with ternary H-Cl-N mixed plasma post-oxi...[J],APPLIED SURFACE SCIENCE,2022,488:293-302
Cai, Jian.Low Temperature Solid-State-Diffusion Bonding for Fine-Pitch Cu/Sn/Cu Interconnect[A],IEEE 65th Electronic Components and Technology Conference (ECTC),2022,2015-July:1616-1623
王德君.Temperature dependency of GaN MOSFETs on AlGaN/GaN heterostructure[A],the 40th International Symposium on Compound Semiconductors,2022
Huang, Lingqin.Temperature dependent electrical characteristics of Pt Schottky barriers fabricated on lightly ...[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2022,54(11)
王德君.Transition region study of SiO2/4H-SiC interface by ADXPS[J],Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,2022,29(5):944-949
Zhang H..Vertical gate RF SOI LIGBT for SPICs with significantly improved latch-up immunity[J],VLSI DESIGN,2022,2011
Zhang H..Vertical gate RF SOI LIGBT without latch-up susceptibility[A],2009 International Semiconductor Device Research Symposium, ISDRS '09,2022
Wu, Zijian.Wafer-Level Hermetic Package by Low-Temperature Cu/Sn TLP Bonding with Optimized Sn Thickness[J],JOURNAL OF ELECTRONIC MATERIALS,2022,46(10):6111-6118
Zhai, Jiali.Visible-light-induced photoelectric gas sensing to formaldehyde based on CdS nanoparticles/ZnO ...[J],SENSORS AND ACTUATORS B CHEMICAL,2022,147(1):234-240
李硕.Work function engineering derived all-solid-state Z-scheme semiconductor-metal-semiconductor sy...[J],RSC Advances,2022,6(71):66783-66787
Huang, Haiyun.A compact behavioral simulation model for CMOS vertical hall-effect devices[A],2022,60(1):33-38
王德君.A Compact Behavioral Simulation Model for CMOS Vertical Hall-effect Devices[J],ECS transactions,2022,60(1):33-38
Wei, Tiwei.A 3D Integration Testing Vehicle with TSV Interconnects[A],14th International Conference on Electronic Materials and Packaging (EMAP),2022
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