朱慧 - 北京工业大学

个人简介

2003年毕业于中国矿业大学（北京）材料科学与工程专业，获得学士学位。同年赴英国剑桥大学学习，2004年毕业于剑桥大学材料专业，获得硕士学位，2010年毕业于剑桥大学电子工程专业，获得博士学位。2011年至今在北京工业大学工作

研究领域

功能薄膜器件的性能表征与机理研究、微电子器件与可靠性物理等

近期论文

查看导师新发文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

Effect of uniaxial tensile strains at different orientations on the characteristics of AlGaN/GaN High-Electron-Mobility Transistors, H. Zhu, C. Wang, et al., IEEE Transactions on Electron Devices, 67: 449 (2020); Modulation of the resistive switching of BiFeO3 thin films through electrical stressing, Y. Yang, H. Zhu, et al., Journal of Applied Physics D: Applied Physics, 53: 115301 (2020); A current transient method for trap analysis in resistance switching of BiFeO3 thin films, H. Zhu, Y. Yang, et al., Applied Physics Letters, 112: 182904 (2018); Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs, H. Zhu, X. Meng, et al., Solid State Electronics, 145: 40 (2018); Fatigue behavior of resistive switching in a BiFeO3 thin film, H. Zhu, Y. Yang, et al., Japanese Journal of Applied Physics, 57: 041501, (2018); Effect of poling process on resistive switching in Au/BiFeO3/SrRuO3 structures, H. Zhu, Y. Zhang, et al., Applied Physics Letters 109, 252901 (2016); Investigation of fatigue behavior of Pb(Zr0.45Ti0.55)O3 thin films, H. Zhu, Y. Chen, et al., Japanese Journal of Applied Physics 55, 091501 (2016); The effect of external stress on the electrical characteristics AlGaN/GaN HEMTs, K. Liu, H. Zhu, et al., Microelectronics Reliability 55, 886 (2015); The effect of external stress on the properties of AlGaAs/GaAs single quantum well laser diodes, H. Zhu, K. Liu, et al., Microelectronics Reliability 55, 62 (2015).