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个人简介

教育经历 2002.09-2006.07,吉林大学材料科学与工程学院,博士,材料物理与化学 2000.09-2002.07,吉林大学材料科学与工程学院,硕士,材料物理与化学 1996.09-2000.07,吉林大学材料科学系,本科,材料科学与工程 工作经历 2013.12-至今,北京理工大学材料学院,讲师 2011.11-2013.05,美国威斯康辛大学麦迪逊分校,助理研究员 2009.01-2011.08,比利时法语鲁汶大学,助理研究员 2006.11-2009.01,意大利国际理论物理中心,博士后

研究领域

基于第一性原理的材料仿真与设计 非金属材料制备与表征

近期论文

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H. Wu, X.C. Zhang, B. Zheng , X.C. Zhao, Y. Liu, H. Li, and J.W. Cheng, Theoretical Investigation of the Thermodynamic Properties of η’-(Cu, Co)6Sn5 Alloys, Journal of Electronic Materials, 47, 1383-1389(2018) .(通讯作者) R. Jacobs, B. Zheng , B. Puchala, P. M. Voyles, Andrew B. Yankovich, and D. Morgan, Counterintuitive Reconstruction of the Polar O?Terminated ZnO Surface with Zinc Vacancies and Hydrogen, the Journal of Physical Chemistry Letters, 7, 4483-4487(2016).(共同第一作者) X.C. Zhang, X.C. Zhao, B. Zheng , Y. Liu, J. Cheng, and H. Li, First-Principles Study of Thermodynamical and Elastic Properties of η’-(Cu,Co)6Sn5 Ternary Alloys, Journal of Electronic Materials, 45, 4919-4927(2016). (通讯作者) Y. Tison, H.Lin, J. Lagoute, V. Repain, C.Chacon, Y. Girard, S. Rousset, L. Henrard, B. Zheng , T. Susi, E. I. Kauppinen, F. Ducastelle, and A. Loiseau, Identification of Nitrogen Dopants in Single-Walled Carbon Nanotubes by Scanning Tunneling Microscopy, ACS nano, 7, 7219-7226(2013). S-.O. Guillaume, B. Zheng , J. -C. Charlier, and L. Henrard, Electronic properties and STM images of doped bilayer graphene, Phys. Rev. B, 85, 035444(2012). F. Joucken, Y.Tison, J.Lagoute, J. Dumont, D. Cabosart, B. Zheng , V. Repain, C. Chacon, Y.Girard, AR. Botello-Mendez, S. Rousset, R. Sporken, J.-C. Charlier, and L. Henrard, Localized state and charge transfer in nitrogen-doped graphene, Phys. Rev. B, 85, 161408(2012) . B. Zheng , P. Hermet, L. Henrard, Scanning tunneling microscopy simulations of nitrogen- and boron- doped graphene and single-walled carbon nanotubes, ACS nano, 4, 4165-4173(2010). B. Zheng , N. Binggeli, Influence of the interface atomic structure on the magnetic and electronic properties of La2/3Sr1/3MnO3/SrTiO3(001) heterojunctions, Phys. Rev. B., 82, 245311 (2010). C.Q. Hu, B. Zheng , J.Q. Zhu, J.C. Han and W.T. Zheng, "Increasing sp3 hybridized carbon atoms in germanium carbide films by increasing argon ion energy and germanium content", J. Phys. D. Appl. Phys., 43, 135103(2010). B. Zheng , N. Binggeli, Effects of chemical order and atomic relaxation on th electronic and magnetic properties of La2/3Sr1/3MnO3, J. Phys. Cond. Matter , 21, 115602(2009). C. Wang, B. Zheng , W. T. Zheng, C. Q. Qu, and Q. Jiang, First-principle investigation on the electronic properties and field emission of a hydrogenated nanodiamond, Diamond and Related Materials, 18, 1310(2009). C. Wang, B. Zheng , W. T. Zheng, Q. Jiang, Electronic properties of bucky diamonds: a first-principle study, Diamond and Related Materials, 17, 204 (2008). B. Zheng , W. T. Zheng, K. Zhang, et al., First-principle study of nitrogen incorporation in amorphous carbon, Carbon, 44, 962 (2006). S. S Yu, W. T Zheng, Q. B Wen, B. Zheng , H. W. Tian, Nature of substitutional impurity atom B/N in zigzag carbon nanotubes revealed by first principle calculations, IEEE. T. Nanotechnology, 5, 595 (2006). B. Zheng , W. T .Zheng, S. S. Yu, H. W. Tian, F. L. Meng, Y. M. Wang, J. Q. Zhu, S. H. Meng, X. D. He, J. C. Han, Growth of tetrahedral amorphous carbon film: Tight-binding molecular dynamics study, Carbon, 43, 1976 (2005). H.W. Tian, W.T. Zheng, B. Zheng, X.Wang, Q.B. Wen, T. Ding, Z.D. Zhao, Dynamic isomer shift in charge-ordering manganite Y0.5Ca0.5MnO3: M?ssbauer spectroscopy study, J. Phys. Chem. B, 109, 1656 (2005). H.W. Tian, W.T. Zheng, Z.D. Zhao, T. Ding, S.S. Yu, B. Zheng , X.T. Li, F.L. Meng and Q. Jiang, Magnetic properties and electron spin resonance of charge ordering manganite Y0.5Ca0.5MnO3, Chem. Phys. Lett. 401, 585 (2005). T. Ding, W.T. Zheng, J.F. Zang, H.W. Tian, B. Zheng , X. Wang, S.S. Yu, Y.M. Wang, Electron pin resonance analysis of magnetic structures in La2/3Ca1/3MnO3, J. Magn. Magn. Mater. 293, 782 (2005). C.Q. Hu, W.T. Zheng, B. Zheng, J.J. Li, Z.S. Jin, X.M. Bai, H.W. Tian, Chemical bonding of a-Ge1-xCx:H .lms grown by RF reactive sputtering, Vacuum 77, 63 (2004). Y.K. Yang, H.Y. Chen, D.M. Li, D.Q. Yuan, B. Zheng, S. Yu, G.T. Zou, The growth of PbTe on H-terminated Si(111) substrate by hot wall epitaxy, Infrared Phys. Techn., 44, 299 (2003).

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