个人简介
王佑,北京航空航天大学合肥创新研究院特聘副研究员。2017年在巴黎国立高等电信学院获通信与电子学博士学位,主要从事自旋电子器件、非易失性存储器、低功耗安全电路设计与电子电路的可靠性的研究。在集成电路与器件可靠性领域的期刊 IEEE Transactions on electron devices 和 Microelectronics Reliability等国际权威期刊和国际会议上发表SCI索引论文20余篇。硕士与博士期间参与法国科研署(ANR)资助的多个科研项目并完成核心任务。2014年在国际可靠性研究会议ESREF上获得最佳论文海报奖。另外,博士课题研究期间开发的两个基于自旋电子器件的开源模型库发表于自旋电子器件开源网站SPINLIB并被众多行业内科研机构使用。
研究领域
自旋电子存储器件建模
低功耗安全电路设计
电子电路的可靠性的研究
近期论文
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Y. Wang,Y. Zhang, YG. Zhang, WS. Zhao, H. Cai, L. Naviner,“Design Space Exploration of Magnetic Tunnel Junction based Stochastic Computing in Deep Learning”, 2018 ACM GLSVLSI, Chicago, USA, 23-25 May2018.
Y. Wang, H. Cai, L. Naviner, WS. Zhao, “A non-Monte-Carlo Methodology for Variability Analysis of Magnetic Tunnel Junction Based Circuits”, IEEE Trans. on Magnetics, Vol.53, 3, pp. 1-6, 2017.
Y. Wang, H. Cai, L. Naviner, JL. Yang, JO. Klein, WS. Zhao. “A novel circuit design of true random number generator using magnetic tunnel junction”, 2016 IEEE/ACM NANOARCH, Beijing, China, 18-20 July2016.
Y. Wang, H. Cai, L. Naviner, Y. Zhang, XX. Zhao, E. Deng, JO. Klein, WS. Zhao, “Compact model of dielectric breakdown in spin transfer torque magnetic tunnel junction”, IEEE Trans. on Electron Devices, Vol. 63, 4, pp. 1762-1767, 2016.
Y. Wang, H. Cai, L. Naviner, Y. Zhang, XX. Zhao, M. Slimani, JO. Klein, WS. Zhao, “A process-variation-resilient methodology of circuit design by using asymmetrical forward body bias in 28nm FDSOI”, Microelectronics Reliability, Vol. 64, pp. 26-30, 2016.
Y. Wang, H. Cai, L. Naviner, Y. Zhang, JO. Klein, WS. Zhao, “Compact thermal modeling of spin transfer torque magnetic tunnel junction”, Microelectronics Reliability, Vol. 55, 9, pp. 1649-1653, 2015.
Y. Wang, Y. Zhang, E. Deng, JO. Klein, L. Naviner, W. Zhao, “Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses”, Microelectronics Reliability, Vol. 54, 9, pp. 1774-1778, 2014.