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Yuxuan Chen, Ke Jiang, Xiaojuan Sun, Zi-Hui Zhang, Shanli Zhang, Jianwei Ben, Bingxiang Wang, Long Guo, Dabing Li. Optimizing metal/n-AlGaN contact by recessed AlGaN heterostructure with polarization effect. Nanoscale Advances[J]. 2023,
Jiang, Nianlei, Chen, Yang, Lv, Bingchen, Jiang, Ke, Zhang, Shanli, Lu, Shunpeng, Li, Shaojuan, Tao, Tao, Sun, Xiaojuan, Li, Dabing. Plasmonic-enhanced efficiency of AlGaN-based deep ultraviolet LED by graphene/Al nanoparticles/graphene hybrid structure. Optics Letters[J]. 2023, 48(12): 3175-3178, https://opg.optica.org/ol/fulltext.cfm?uri=ol-48-12-3175&id=531326.
Zang, Hang, Liu, Mingrui, Jia, Yuping, Jiang, Ke, Ben, Jianwei, Chen, Yang, Lv, Shunpeng, Sun, Xioajuan, Li, Dabing. Tunable piezoelectric and ferroelectric responses of Al1-xScxN: The role of atomic arrangement. 中国科学 物理学 力学 天文学[J]. 2023, 66(7): 277711-,
Hang Zang, Zhiming Shi, JianWei Ben, Ke Jiang, Shanli Zhang, Liu, Mingrui, Tong Wu, Yuping Jia, Xiaojuan Sun, Dabing Li. Growth Mechanism and Electronic Property of Stacking Mismatch Boundaries in Wurtzite III-Nitride Materials. Physical Review B[J]. 2023, 107: 165308-,
Yang, Changjin, Liang, Lei, Qin, Li, Tang, Hui, Lei, Yuxin, Jia, Peng, Chen, Yongyi, Wang, Yubing, Song, Yu, Qiu, Cheng, Zheng, Chuantao, Zhao, Huan, Li, Xin, Li, Dabing, Wang, Lijun. Advances in silicon-based, integrated tunable semiconductor lasers. NANOPHOTONICS[J]. 2023, 12(2):
Zang, Hang, Ben, Jianwei, Jiang, Ke, Chen, Yang, Zhang, Shanli, Liu, Mingrui, Wu, Tong, Jia, Yuping, Sun, Xiaojuan, Li, Dabing. Growth mechanism and electronic properties of stacking mismatch boundaries in wurtzite III-nitride material. Physical Review B[J]. 2023, 107(16): 165308-,
Xianjun Wang, Ke Jiang, Xiaojuan Sun, Zi-Hui Zhang, Yuxuan Chen, Bingxiang Wang, Dabing Li. Valence subbands profile regulation in AlGaN quantum well based on k∙p theory. Physica Scripta[J]. 2023,
Chunyue Zhang, Ke Jiang, Xiaojuan Sun, Dabing Li. Recent progress on AlGaN based deep ultraviolet light-emit- 2ting diodes below 250 nm. Crystals[J]. 2022,
Liu, Mingrui, Yue, Jianing, Meng, Jianchao, Shao, Tingna, Yao, Chunli, Sun, Xiaojuan, Nie, Jiacai, Li, Dabing. Sign reversal of planar Hall effect with temperature in La-doped Sr2IrO4 films. APPLIED PHYSICS LETTERS[J]. 2022, 122(2): http://dx.doi.org/10.1063/5.0134002.
Fu, Danyang, Lei, Dan, Li, Zhe, Zhang, Gang, Huang, Jiali, Sun, Xiaojuan, Wang, Qikun, Li, Dabing, Wang, Jiang, Wu, Liang. Toward Phi 56 mm Al-Polar AlN Single Crystals Grown by the Homoepitaxial PVT Method. CRYSTAL GROWTH & DESIGN[J]. 2022, 22(5): 3462-3470, http://dx.doi.org/10.1021/acs.cgd.2c00240.
Chen, Yang, Zang, Hang, Ben, Jianwei, Zhang, Shanli, Jiang, Ke, Shi, Zhiming, Jia, Yuping, Liu, Mingrui, Sun, Xiaojuan, Li, Dabing. AlGaN UV Detector with Largely Enhanced Heat Dissipation on Mo Substrate Enabled by van der Waals Epitaxy. CRYSTAL GROWTH & DESIGN[J]. 2022, 23: 1162-1171,
Shi, Zhiming, Zang, Hang, Ma, Xiaobao, Yang, Yuxin, Jiang, Ke, Chen, Yang, Jia, Yuping, Sun, Xiaojuan, Li, Dabing. Grain boundary-driven magnetism in aluminum nitride. APPLIED PHYSICS LETTERS[J]. 2022, 121(24):
Chen, Yang, Zang, Hang, Zhang, Shanli, Shi, Zhiming, Ben, Jianwei, Jiang, Ke, Jia, Yuping, Liu, Mingrui, Li, Dabing, Sun, Xiaojuan. Van der Waals Epitaxy of c-Oriented Wurtzite AlGaN on Polycrystalline Mo Substrates for Enhanced Heat Dissipation. ACS APPLIED MATERIALS & INTERFACES[J]. 2022, 14(33): 37947-37957, http://dx.doi.org/10.1021/acsami.2c10039.
Qi, Zhanbin, Shi, Zhiming, Zang, Hang, Ma, Xiaobao, Yang, Yuxin, Jia, Yuping, Jiang, Ke, Sun, Xiaojuan, Li, Dabing. Morphology and carrier mobility of high-B-content BxAl1-xN ternary alloys from an ab initio global search. NANOSCALE[J]. 2022, 14(31): 11335-11342,
An, Junru, Zhao, Xingyu, Zhang, Yanan, Liu, Mingxiu, Yuan, Jian, Sun, Xiaojuan, Zhang, Zhiyu, Wang, Bin, Li, Shaojuan, Li, Dabing. Perspectives of 2D Materials for Optoelectronic Integration. ADVANCED FUNCTIONAL MATERIALS[J]. 2022, 32(14): http://dx.doi.org/10.1002/adfm.202110119.
Zou, Yuting, Shi, Yaru, Wang, Bin, Liu, Mingxiu, An, Junru, Zhang, Nan, Qi, Liujian, Yu, Weili, Li, Dabing, Li, Shaojuan. Electrical and Optoelectrical Dual-Modulation in Perovskite-Based Vertical Field-Effect Transistors. ACS PHOTONICS. 2022,
Tao Huang, Zhicheng Zhu, Chen Zhao, Wenchi Kong, Xuhang Chen, Ruiyan Li, Zhi Yu, Zhiming Shi, Dabing Li, Bai Yang, Weili Yu. Enhancing two-dimensional perovskite photodetector performance through balancing carrier density and directional transport. Journal of Materials Chemistry A[J]. 2022, 10: 21044-21052,
Chen, Yang, Shi, Zhiming, Zhang, Shanli, Ben, Jianwei, Jiang, Ke, Zang, Hang, Jia, Yuping, Lu, Wei, Li, Dabing, Sun, Xiaojuan. The van der Waals Epitaxy of High-Quality N-Polar Gallium Nitride for High-Response Ultraviolet Photodetectors with Polarization Electric Field Modulation. ADVANCED ELECTRONIC MATERIALS. 2021,
隋佳恩, 贲建伟, 臧行, 蒋科, 张山丽, 郭冰亮, 陈洋, 石芝铭, 贾玉萍, 黎大兵, 孙晓娟. 高温热处理a面AlN表面形貌演变机理. 发光学报[J]. 2021, 42(6): 810-817, http://lib.cqvip.com/Qikan/Article/Detail?id=7104814014.
Ke Jiang, Xiaojuan Sun, Zhiming Shi, Hang Zang, Jianwei Ben, HuiXiong Deng, Dabing Li. Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides. LIGHT-SCIENCE & APPLICATIONS[J]. 2021, 10(1): 671-680, https://doaj.org/article/140e562a6c814998ba3234b10cd8dd3d.
Kai, Cuihong, Zang, Hang, Ben, Jianwei, Jiang, Ke, Shi, Zhiming, Jia, Yuping, Cao, Xingzhong, Lu, Wei, Sun, Xiaojuan, Li, Dabing. Origination and evolution of point defects in AlN film annealed at high temperature. JOURNAL OF LUMINESCENCE[J]. 2021, 235: http://dx.doi.org/10.1016/j.jlumin.2021.118032.
Zang, Hang, Sun, Xiaojuan, Jiang, Ke, Chen, Yang, Zhang, Shanli, Ben, Jianwei, Jia, Yuping, Wu, Tong, Shi, Zhiming, Li, Dabing. Cation Vacancy in Wide Bandgap III-Nitrides as Single-Photon Emitter: A First-Principles Investigation. ADVANCED SCIENCE[J]. 2021, 8(18): http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000678874400001.
Xin Li, Shuyu Ni, Yan Jiang, Jie Li, Wei Wang, Jialei Yuan, Dabing Li, Xiaojuan Sun, Yongjin Wang. AlInGaAs Multiple Quantum Well-Integrated Device with Multifunction Light Emission/Detection and Electro-Optic Modulation in the Near-Infrared Range. ACS OMEGA[J]. 2021, 6(12): 8687-8692, https://doaj.org/article/ee21f5736f3342c081920a8bf5f2cc4e.
Jia, Yuping, Shen, Yutong, Sun, Xiaojuan, Shi, Zhiming, Jiang, Ke, Wu, Tong, Liang, Hongwei, Cui, Xingzhu, Lu, Wei, Li, Dabing. Improved performance of SiC radiation detector based on metal-insulator-semiconductor structures. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT[J]. 2021, 997: http://dx.doi.org/10.1016/j.nima.2021.165166.
Wang, Jiaxing, Chu, Chunshuang, Tian, Kangkai, Che, Jiamang, Shao, Hua, Zhang, Yonghui, Jiang, Ke, Zhang, ZiHui, Sun, Xiaojuan, Li, Dabing. Polarization assisted self-powered GaN-based UV photodetector with high responsivity. PHOTONICS RESEARCH[J]. 2021, 9(5): 734-740, http://dx.doi.org/10.1364/PRJ.418813.
Ben, Jianwei, Liu, Xinke, Wang, Cong, Zhang, Yupeng, Shi, Zhiming, Jia, Yuping, Zhang, Shanli, Zhang, Han, Yu, Wenjie, Li, Dabing, Sun, Xiaojuan. 2D III-Nitride Materials: Properties, Growth, and Applications. ADVANCED MATERIALSnull. 2021, 33(27): http://dx.doi.org/10.1002/adma.202006761.
Shi, Zhiming, Qi, Zhanbin, Zang, Hang, Jiang, Ke, Chen, Yang, Jia, Yuping, Wu, Tong, Zhang, Shanli, Sun, Xiaojuan, Li, Dabing. Point Defects in Monolayer h-AlN as Candidates for Single-Photon Emission. ACS APPLIED MATERIALS AND INTERFACES[J]. 2021, 13(31): 37380-37387,
Jia, Yuping, Sun, Xiaojuan, Shi, Zhiming, Jiang, Ke, Wu, Tong, Liang, Hongwei, Cui, Xingzhu, Lu, Wei, Li, Dabing. Improved performance of SiC radiation detectors due to optimized ohmic contact electrode by graphene insertion. DIAMOND AND RELATED MATERIALS[J]. 2021, 115: http://dx.doi.org/10.1016/j.diamond.2021.108355.
Zhu, Shijie, Qiu, Pengjiang, Qian, Zeyuan, Shan, Xinyi, Wang, Zhou, Jiang, Ke, Sun, Xiaojuan, Cui, Xugao, Zhang, Guoqi, Li, Dabing, Tian, Pengfei. 2 Gbps free-space ultraviolet-C communication based on a high-bandwidth micro-LED achieved with pre-equalization. OPTICS LETTERS[J]. 2021, 46(9): 2147-2150, http://dx.doi.org/10.1364/OL.423311.
Chen, Yang, Jiang, Ke, Zang, Hang, Ben, Jianwei, Zhang, Shanli, Shi, Zhiming, Jia, Yuping, Lu, Wei, Li, Dabing, Sun, Xiaojuan. Growth of high-quality wafer-scale graphene on dielectric substrate for high-response ultraviolet photodetector. CARBON[J]. 2021, 175: 155-163, http://dx.doi.org/10.1016/j.carbon.2020.12.055.
Guo, Long, Jiang, Ke, Sun, Xiaojuan, Zhang, Zihui, Ben, Jianwei, Jia, Yuping, Wang, Yong, Li, Dabing. Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode. PHOTONICS RESEARCH[J]. 2021, 9(10): 1907-1915, http://dx.doi.org/10.1364/PRJ.435937.
Shi, Zhiming, Qi, Zhanbin, Zang, Hang, Jiang, Ke, Chen, Yang, Jia, Yuping, Wu, Tong, Zhang, Shanli, Sun, Xiaojuan, Li, Dabing. Point Defects in Monolayer h-AlN as Candidates for Single-Photon Emission. ACS APPLIED MATERIALS & INTERFACES[J]. 2021, 13(31): 37370-37377, http://dx.doi.org/10.1021/acsami.1c09175.
Jiang, Ke, Sun, Xiaojuan, Chen, Yuxuan, Zhang, Shanli, Ben, Jianwei, Chen, Yang, Zhang, ZiHui, Jia, Yuping, Shi, Zhiming, Li, Dabing. Three-dimensional metal semiconductor meta bipolar ultraviolet phototransistor based on GaN p-i-n epilayer. APPLIED PHYSICS LETTERS[J]. 2021, 119(16):
Chen, Yang, Wu, You, Ben, Jianwei, Jiang, Ke, Jia, Yuping, Zhang, Shanli, Zang, Hang, Shi, Zhiming, Duan, Bin, Sun, Xiaojuan, Li, Dabing. A high-response ultraviolet photodetector by integrating GaN nanoparticles with graphene. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2021, 868: 159281-, http://dx.doi.org/10.1016/j.jallcom.2021.159281.
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