个人简介
简 历
2006年进入北京交通大学电子信息工程学院硕博连读攻读通信与信息系统专业博士学位,研究方向是光电子器件和光纤通信。2011年7月加入到北京大学物理学院从事博士后工作,主要从事光电子器件特性及应用研究。2014年7月入职北京科技大学计算机与通信工程学院,目前的研究方向光电子器件和光无线通信
研究领域
科研业绩
1. 国家自然科学基金青年项目,高调制频率GaN基单芯片无荧光粉白光LED的研究,主持
2. 中国博士后科学基金面上项目,可见光通信中LED光源特性对系统性能的影响及改善,主持
3. 国家自然科学基金面上项目,基于ROF的高铁可见光通信关键技术研究,参与
4. 国家自然科学基金面上项目,GaN纳米异质外延生长及其在发光器件中的应用,参与
5. 北京市自然科学基金,高性能可见光LED无线通信系统的研究,参与
6. 广东省重大科技专项,可见光通信工程化关键技术及应用研究,参与
近期论文
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代表性论文
Huimin Lu, Tongjun Yu, Chuanyu Jia, Yini Zhang, Jianping Wang, Guoyi Zhang, “Performance improvement of VLC system by using GaN-based LEDs with strain relief layers,” IEEE Photonics Technology Letters, 2016, 28(9): 1038. (SCI)
Huimin Lu, Tongjun Yu, Xinjuan Chen, Jianping Wang, Zhizhong Chen, and Guoyi Zhang, “Surface emission enhancement for deep ultraviolet AlGaN-based LEDs using triangular shaped quantum wells,” Superlattices and Microstructures, 2016, 91(1): 112. (SCI)
Huimin Lu, Chaowen Yan, Wei Gao, Tongjun Yu, Jianping Wang, “Efficiency droop effects of GaN-based light-emitting diodes on the performance of code division multiple access visible-light communication system,” Optical Engineering, 2016, 55(2): 027109. (SCI)
Huimin Lu, Tongjun Yu, Genxiang Chen, Jianping Wang and Guoyi Zhang, “Band engineering for surface emission enhancement in Al-rich AlGaN-based deep-ultraviolet light emitting diodes,” Japanese Journal of Applied Physics, 2016, 55(5s): 05FJ12. (SCI)
Huimin Lu, Tongjun Yu, Yuebin Tao, Xingbin Li, Zhizhong Chen, Jianping Wang, and Guoyi Zhang. “Efficiency droop suppression of InGaN-based blue light-emitting diodes using dip-shaped quantum wells,” Physica Status Solidi A: Applications and Materials Science, 2016, 213(5): 1187. (SCI)
Huimin Lu, Tongjun Yu, Gangcheng Yuan, Xinjuan Chen, Zhizhong Chen, Genxiang Chen, and Guoyi Zhang, “Enhancement of surface emission in deep ultraviolet AlGaN-based light emitting diodes with staggered quantum wells,” Optics Letters, 2012, 37(17): 3693. (SCI)
Huimin Lu, Tongjun Yu, Gangcheng Yuan, Chuanyu Jia, Genxiang Chen, and Guoyi Zhang, “Valence subband coupling effect on polarization of spontaneous emissions from Al-rich AlGaN/AlN Quantum Wells,” Optics Express, 2012, 20(25): 27384. (SCI)
Huimin Lu, Genxiang Chen. “Design Strategies for Mitigating the Influence of Polarization Effect on GaN-Based Multiple Quantum Well Light Emitting Diodes,” Journal of Applied Physics, 2011, 109(9), 093102. (SCI)
Huimin Lu, Genxiang Chen. “Optimization of a GaN-based irregular multiple quantum well structure for a dichromatic white LED,” Chinese Physics B, 2011, 20(3): 037807. (SCI)
Huimin Lu, Genxiang Chen and Shuisheng Jian. “Design of phosphor-free single-chip white light-emitting diodes using InAlGaN irregular multiple quantum well structures,” Chinese Physics Letters, 2009, 26(8): 087803. (SCI)