Goto, Osamu - 北京大学 - 新材料学院

个人简介

2012 Visiting scholar Chemical Engineering Stanford University California, USA 1994 Ph.D. Electrical Engineering Hokkaido University Hokkaido, Japan 1991 Master Electrical Engineering Hokkaido University Hokkaido, Japan 1989 Bachelor Electrical Engineering Hokkaido University Hokkaido, Japan

研究领域

1. Organic single-crystal growth: Equipment design, new method, growth mechanism 2. Materials characterization 3. Device fabrication and characterization: Laser diode (LD), Light emitting diode (LED), Photovoltaic (PV), Thin-film transistor (TFT)

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

1. Guillaume Schweicher,Vincent Lemaur,Claude Niebel,Christian Ruzié,Ying Diao,Osamu Goto,Wen-Ya Lee,Yeongin Kim,Jean-Baptiste Arlin,JolantaKarpinska, Alan R Kennedy,Sean R Parkin,Yoann Olivier,Stefan C B Mannsfeld,JérômeCornil,Yves H Geerts,ZhenanBao, “Bulky End-Capped [1]Benzothieno[3,2-b]benzothiophenes: Reaching High-Mobility Organic Semiconductors by Fine Tuning of the Crystalline Solid-State Order”,Advanced Materials 27, 3066-3072 (2015). 2. Osamu Goto, ShigetakaTomiya, Yosuke Murakami, Akira Shinozaki, Akira Toda, JiroKasahara, and Daisuke Hobara,“Organic Single-Crystal Arrays from Solution-Phase Growth Using Micropattern withNucleation Control Region”, Advanced Materials 24, 1117-1122 (2012). 3. Ohta, Y. Ohizumi, Y. Hoshina, T. Tanaka, Y. Yabuki, K. Funato, S. Tomiya, S. Goto, and M. Ikeda,“High-power pure blue laser diodes”, physica status solidi (a)204, No. 6, 2068–2072 (2007). 4. Takao Miyajima, Shingo Takeda, Yoshiyuki Tsusaka, Junji Matsui, Yoshihiro Kudo, ShigetakaTomiya, Tomonori Hino, ShuGoto, Masao Ikeda, and Hironobu Narui, “Structural analysis of ELO-GaN grown on a sapphire substrate as the underlying layer of a GaN-based laser diode”, physica status solidi (a) 204, No. 1, 267-271 (2007). 5. Tomiya,O. Goto, Y. Hoshina, T. Tanaka, and M. Ikeda, “Multiple defects in GaInN multiple quantum wells grown on ELO GaN layers and on GaN substrates”, physica status solidi (c) 3, No. 6, 1779-1782 (2006). 6. Ikeda, T. Mizuno, M. Takeya, S. Goto, S. Ikeda, T. Fujimoto, Y. Ohfuji, and T. Hashizu, “High-power GaN-based semiconductor lasers”, physica status solidi (c) 1, No. 6, 1451-1467 (2004). 7. Tomiya, T. Hino,S. Goto, M. Takeya, and M. Ikeda,“Dislocation related issues in the degradation of GaN-based laser diodes”, IEEE Journal of Selected Topics in Quantum Electronics 10, No. 6, 1277-1286 (2004). 8. Uchida, M. Takeya, S. Ikeda, T. Mizuno, T. Fujimoto, O. Matsumoto, S. Goto, T. Tojyo, and M. Ikeda, “Recent progress in high-power blue-violet lasers”, IEEE Journal of Selected Topics in Quantum Electronics 9, No. 5, 1252-1259 (2003). 9. Miyajima, M. Takeya, S. Goto, S. Tomiya, S. Takeda, H. Kurihara, K. Watanabe, M. Kato, N. Hara, T. Tsusaka, and J. Matsui, “Structure analysis of ELO-GaN using a 2 × 4 μm2 micro-beam X-ray of an 8-GeV storage ring”, physica status solidi (b) 240, No. 2, 285-288 (2003). 10. ShigetakaTomiya, ShuGoto, Motonobu Takeya, and Masao Ikeda, “Defects in degraded GaN-based laser diodes”, physica status solidi (a) 200, No. 1, 139-142 (2003). 11. ShuGoto, Makoto Ohta, Yoshifumi Yabuki, Yukio Hoshina, Kaori Naganuma, KoshiTamamura, Toshihiro Hashizu, and Masao Ikeda, “Super high-power AlGaInN-based laser diodes with a singlebroad-area stripe emitter fabricated on a GaN substrate”, physica status solidi (a) 200, No. 1, 122-125 (2003). 12. Uchida, S. Ikeda, T. Mizuno, S. Goto, T. Sasaki, Y. Ohfuji, T. Fujimoto, O. Matsumoto, K. Oikawa, M. Takeya, Y. Yabuki, and M. Ikeda, “High-power blue-violet lasers grown on 3-inch sapphire and GaN substrate”, Institute of Physics Conference Series No. 174, 307-314 (2003). 13. APEX/JJAP Paper Award from JSAP in 2004 Tsuyoshi Tojyo, Shiro Uchida, Takashi Mizuno, Takeharu Asano, Motonobu Takeya, Tomonori Hino, Satoru Kijima, ShuGoto, Yoshifumi Yabuki, and Masao Ikeda, “High-Power AlGaInN Laser Diodes with High Kink Level and Low Relative Intensity Noise”, Japanese Journal of Applied Physics 41, 1829-1833 (2002). 14. Takeya, T. Tojyo, T. Asano, S. Ikeda, T. Mizuno, O. Matsumoto, S. Goto, Y. Yabuki, S. Uchida, and M. Ikeda, “High-power AlGaInN lasers”, physica status solidi (a) 192, No. 2, 269-276 (2002). 15. ShuGoto, Tsuyoshi Tojyo, Shin-ichiAnsai, Yoshifumi Yabuki, Tomonori Hino, Hirofumi Yamanaka, Yoshinori Moriya, Yoshitomo Ito, Yuichi Hamaguchi, Shiro Uchida, and Masao Ikeda, “Super High Output Power of 4.2 W in AlGaInN-Based Blue-Violet Laser Diode Array”, Institute of Physics Conference Series No 170, 177-182 (2002). 16. Kijima, T. Tojyo,S. Goto, M. Takeya, T. Asano, T. Hino, S. Uchida, and M. Ikeda,“Novel Techniques for Stabilizing Transverse Mode in AlGaInN-Based Laser Diodes”, physica status solidi (a) 188, No. 1, 55–58 (2001). 17.Tsuyoshi Tojyo, Takeharu Asano, Motonobu Takeya, Tomonori Hino, Satoru Kijima, ShuGoto, Shiro Uchida, and Masao Ikeda,“GaN-Based High Power Blue-Violet Laser Diodes”, Japanese Journal of Applied Physics 40, 3206-3210 (2001). 18. ShuGotoh, Takashi Ueda, and ChouhoYamagishi, “Improvement in photovoltaic conversion efficiency of InGaP solar cells grown on Si substrate by thermal cleaning using Si2H6”,Solar energy Materials & Solar Cells 66, 631-636 (2001). 19. Kakinuma, T. Ueda, S. Gotoh, and C. Yamagishi, “Reduction of threading dislocations in GaAs on Si by the use of intermediate GaAs buffer layers prepared under high V/III ratios”, Journal of Crystal Growth 205, 25-30 (1999). 20. Kakinuma, T. Ueda, S. Gotoh, and M. Akiyama, “Depth dependence of hydrogenation using cyclotron plasma in GaAs-on-Si solar cell structures”, Journal of Vacuum Science & Technology A17 (No. 2), 453-457 (1999). 21. Tomoyuki OHSHIMA, Hironobu MORIGUCHI, Ryoji SHIGEMASA, Shu GOTOH, Masanori TSUNOTANI, and Tamotsu KIMURA, “Shottky Characteristics of InAlAs Grown by Metal-Organic Chemical Vapor Deposition”, Japanese Journal of Applied Physics38, Part 1-2B, 1161-1163 (1999). 22. Shu GOTOH, Takashi UEDA, Tomoyuki OHSHIMA, and Hiroaki KAKINUMA, “Effect of Growth Conditions on Electrical Properties of Si-Doped In52Al0.48As Grown by Metalorganic Vapor Phase Epitaxy”, Japanese Journal of Applied Physics38, Part 1-2B, 1048-1051 (1999). 23. Ueda, M. Mohri, S. Gotoh, H. Kakinuma, and M. Akiyama, “Improvement of conversion efficiency by In0.52Al0.48As window layers for p+nInP solar cells”, Solar Energy Materials and Solar Cells 50,197-202 (1998). 24. ShuGotoh, Takashi Ueda, Hiroaki Kakinuma, and Masahiro Akiyama, “Thermal stability of GaAs tunnel junctions using carbon as a p-type dopant grown by metal-organic vapor phase epitaxy”, Solar Energy Materials and Solar Cells 50, 281-288 (1998). 25. Koji Nakamura, SaekoOshiba, Michito Nakajima, ShuGotoh, and Hideaki Horikawa, “Microampere laser threshold at 80OC with InGaAs/GaAs/InGaP buried heterostructure strained quantum well lasers”, Journal of Crystal Growth 170, 377-382 (1997). 26. Shu GOTOH and Hideaki HORIKAWA, “Characteristics of AlGaAs/AlGaAs Interface Regrown Using In-Situ Low-temperature H2 Annealing in Metalorganic Vapor Phase Epitaxy”, Japanese Journal of Applied Physics36, Part 1-3B, 1741-1745 (1997). 27. Gotoh and H. Horikawa, “Improvement of AlGaAs/AlGaAs interface by in-situ low-temperature H2 annealing in metalorganic vapor phase epitaxy”, Applied Physics Letters 69, 641-643 (1996). 28. Jun-ya ISHIZAKI, Shu GOTO, Motoya KISHIDA, Takashi FUKUI, and Hideki HASEGAWA, “Mechanism of Multiatomic Step Formation during Metalorganic Chemical Vapor Deposition Growth of GaAs on (001) Vicinal Surface Studied by Atomic Force Microscopy”, Japanese Journal of Applied Physics 33, Part 1-1B, 721-726 (1994). 29. Shu GOTO, Jun-ya ISHIZAKI, Takashi FUKUI, and Hideki HASEGAWA, “Growth-Behavior and Mechanism of Alkyl-Desorption-Limited Epitaxial Growth on Exactly Oriented and Vicinal Substrates”, Japanese Journal of Applied Physics 33, Part 1-1B, 734-741 (1994). 30. ShuGoto, Jun-yaIshizaki, Takashi Fukui, and Hideki Hasegawa, “Atomic layer epitaxy growth of GaAs/InAssuperlattice structures”, Institute of Physics Conference Series No 129, 139-144 (1992). 31. ShuGoto, Keiichi Higuchi, and Hideki Hasegawa, “Atomic layer epitaxy growth of InAs/GaAsheterostructures and quantum wells”, Institute of Physics Conference Series No 120, 547-552 (1991).