近期论文
查看导师新发文章
（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）
1、T. C. Chang, K. C. Chang, T. M. Tsai, T. J. Chu, and Simon M. Sze, “Resistance Random Access Memory”, Materials Today, 19(5), 254-264 (2016). (IF：21.7)
2、Lin, CY, Chen, PH, Chang, TC, K. C. Chang*, Zhang, SD, Tsai, TM, Pan, CH, Chen, MC, “Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode”, NANOSCALE, 9(25), 8586-8590 (2017) (IF：7.37)
3、Chen, BW, Chang, TC, K. C. Chang*, Hung, YJ, Huang, SP, Chen, HM, Liao, PY, Lin, YH , Huang, HC, Chiang, HC, “Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low Temperature Poly-Si Thin-Film Transistors”, ACS APPLIED MATERIALS & INTERFACES, 9 (13), 11942-11949 (2017) (IF：7.50)
4、Tseng, YT, Chen, PH, Chang, TC, K. C. Chang*, Tsai, TM, Shih, CC, Huang, HC, Yang, CC, Lin, CY, Wu, CH, “Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High-k Spacer Structure”, ADVANCED ELECTRONIC MATERIALS, 3(9), (2017) (IF：4.19)
5、Chen, PH, Chang, TC, K. C. Chang*, Tsai, TM, Pan, CH, Shih, CC, Wu, CH, Yang, CC, Chen, WC, Lin, JC, “Effects of plasma treatment time on surface characteristics of indium-tin-oxide film for resistive switching storage applications”, APPLIED SURFACE SCIENCE, 414, 224-229 (2017) (IF：3.39)
6、Lu, YH, Chang, TC, Chen, LH, Lin, YS, Liu, XW, Liao, JC, Lin, CY, Lien, CH, K. C. Chang*, Zhang, SD, “Abnormal Recovery Phenomenon Induced by Hole Injection During Hot Carrier Degradation in SOI n-MOSFETs”, IEEE ELECTRON DEVICE LETTERS, 38(7), 835-838 (2017) (IF：3.05)
7、Lin, CY, Chang, TC,Liu, KJ,Chen, LH, Tsai, JY, Chen, CE, Lu, YH, Liu, HW, Liao, JC, K. C. Chang*, “Analysis of Contrasting Degradation Behaviors in Channel and Drift Regions Under Hot Carrier Stress in PDSOI LD N-Channel MOSFETs”, IEEE ELECTRON DEVICE LETTERS, 38(6), 705-707 (2017) (IF：3.05)
8、Liao, PY, Chang, TC, Chen, YJ,Su, WC,Chen, BW,Chen, LH,Hsieh, TY, Yang, CY, K. C. Chang*, Zhang, SD,“The effect of device electrode geometry on performance after hot-carrier stress in amorphous In-Ga-Zn-O thin film transistors with different via-contact structures”, Appl. Phys. Lett., 110(20), (2017) (IF：3.41)
9、Wu, CH, Chang, TC, Tsai, TM, K. C. Chang*, Chu, TJ, Pan, CH, Su, YT, Chen, PH, Lin, SK, Hu, SJ, “Effect of charge quantity on conduction mechanism of high-and low-resistance states during forming process in a one-transistor-one-resistor resistance random access memory”, APPLIED PHYSICS EXPRESS, 10(5), (2017) (IF：2.67)
10、W. C. Chen, T. M. Tsai, K. C. Chang*, H. L. Chen, Y. T. Su, C. C. Yang, M. C. Chen, H. C. Huang, and Simon M. Sze, “Influence of Ammonia on Amorphous Carbon Resistive Random Access Memory”, IEEE Electron Device Lett., 38(4), 453-456 (2017) (IF：3.05)
11、Y. C. Chien, T. C. Chang, H. C. Chiang, H. M. Chen, Y. C. Tsao, C. C. Shih, B. W. Chen, P. Y. Liao, T. Y. Chu, Y. C. Yang, Y. J. Hung, T. M. Tsai, and K. C. Chang*, “Role of H2O Molecules in Passivation Layer of a-InGaZnO Thin Film Transistors”, IEEE Electron Device Lett., 38(4), 469-472 (2017) (IF：3.05)
12、W. C. Su, T. C. Chang, P. Y. Liao, Y. J. Chen, B. W. Chen, T. Y. Hsieh, C. I. Yang, Y. Y. Huang, H. M. Chang, S. C. Chiang, K. C. Chang*, and T. M. Tsai, “The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors”, Appl. Phys. Lett., 110, 103502 (2017). (IF：3.41)
13、C. H. Pan, T. C. Chang, T. M. Tsai, K. C. Chang*, P. H. Chen, S. W. Chang-Chien, M. C. Chen, H. C. Huang, H. Q. Wu, N. Deng, H. Qian, S. M. Sze, “Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3:ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influence”, Appl. Phys. Lett., 109(18), 183509 (2016). (IF：3.41)
14、T. M. Tsai, K. C. Chang*, T. C. Chang, R. Zhang, T. Wang, C. H. Pan, K. H. Chen, H. M. Chen, M. C. Chen, Y. T. Tseng, P. H. Chen, I. Lo, J. C. Zheng, J. C. Lou, S. M. Sze, “Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory”, IEEE Electron Device Lett., 37(5), 584-587 (2016). (IF: 3.05)
15、K. C. Chang*, T. C. Chang, T. M. Tsai1, R. Zhang, Y. C. Hung, Y. E. Syu, Y. F. Chang, M. C. Chen, T. J. Chu, H. L. Chen, C. H. Pan, C. C. Shih, J. C. Zheng and S. M. Sze, “Physical and Chemical Mechanisms in Oxide-based Resistance Random Access Memory”, Nanoscale Res. Lett., 10, 120 (2015). (IF: 2.83）
16、K. C. Chang*, T. M. Tsai, T. C. Chang, R. Zhang, K. H. Chen, J. H. Chen, M. C. Chen, H. C. Huang, W. Zhang, C. Y. Lin, Y. T. Tseng, H. C. Lin, J. C. Zheng, and S. M. Sze, “Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride-Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid”, IEEE Electron Device Lett., 36(6), 558-560 (2015). (IF: 3.05)
17、C. Y. Lin, K. C. Chang*, T. C. Chang, T. M. Tsai, C. H. Pan, R. Zhang, K. H. Liu, H. M. Chen, Y. T. Tseng, Y. C. Hung, Y. E. Syu, J. C. Zheng, Y. L. Wang, W. Zhang, and S. M. Sze, “Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory”, IEEE Electron Device Lett., 36(6), 564-566 (2015). (IF: 3.05)
18、W. Zhang, Y. Hu, T. C. Chang, T. M. Tsai, K. C. Chang*, H. L. Chen, Y. T. Su, R. Zhang, Y. C. Hung, Y. E. Syu, M. C. Chen, J. C. Zheng, H. C. Lin, and S. M. Sze, “Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory”, IEEE Electron Device Lett., 36(6), 552-554 (2015). (IF: 3.05)
19、Y. T. Tseng, T. M. Tsai, T. C. Chang, C. C. Shih, K. C. Chang*, R. Zhang, K. H. Chen, J. H. Chen, Y. C. Li, C. Y. Lin, Y. C. Hung, Y. E. Syu, J. C. Zheng, and Simon M. Sze, “Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory”, Appl. Phys. Lett., 106, 223505 (2015). (IF：3.41）
20、K. C. Chang, T. M. Tsai, T. C. Chang, K. H. Chen, R. Zhang, Z. Y. Wang, J. H. Chen, T. F. Young, M. C. Chen, T. J. Chu, S. Y. Huang, Y. E. Syu, D. H. Bao,; S. M. Sze, “Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory”, IEEE Electron Device Lett., 35(5), 530-532 (2014). (IF: 3.05)
21、K. C. Chang, J. H. Chen, T. M. Tsai, T. C. Chang, S. Y. Huang, R. Zhang, K. H. Chen, Y. E. Syu, G. W. Chang, T. J. Chu, G. R. Liu, Y. T. Su, M. C. Chen, J. H. Pan, K. H. Liao, Y. H. Tai, T. F. Young, S. M. Sze, C. F. Ai, M. C. Wang, J. W. Huang, “Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment”, J. Supercrit. Fluids, 85, 183-189 (2014). (IF: 2.99)
22、K. C. Chang, R. Zhang, T. C. Chang, T. M. Tsai, J. C. Lou, J. H. Chen, T. F. Young, M. C. Chen, Y. L. Yang, Y. C. Pan, G. W. Chang, T. J. Chu, C. C. Shih, J. Y. Chen, C. H. Pan, Y. T. Su, Y. E. Syu, Y. H. Tai, and Simon M. Sze, “Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices”, IEEE Electron Device Lett., 34(5), 677-679 (2013). (IF: 3.05)
23、K. C. Chang, T. M. Tsai, T. C. Chang, H. H. Wu, J. H. Chen, Y. E. Syu, G. W. Chang, T. J. Chu, G. R. Liu, Y. T. Su, M. C. Chen, J. H. Pan, J. Y. Chen, C. W. Tung, H. C. Huang, Y. H. Tai, D. S. Gan, Simon M. Sze, “Characteristics and Mechanisms of Silicon Oxide Based Resistance Random Access Memory”, IEEE Electron Device Lett. , 34(3), 399-401 (2013). (IF: 3.05)
24、K. C. Chang, T. M. Tsai, T. C. Chang, Senior Member, IEEE, H. H. Wu, K. H. Chen, J. H. Chen, T. F. Young, T. J. Chu, J. Y. Chen, C. H. Pan, Y. T. Su, Y. E. Syu, C. W. Tung, G. W. Chang, M. C. Chen, H. C. Huang, Y. H. Tai, D. S. Gan, J. J. Wu, Y. Hu, and Simon M. Sze, “Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices”, IEEE Electron Device Lett., 34(4), 511-513 (2013). (IF: 3.05)
25、K. C. Chang, T. M. Tsai, R. Zhang, T. C. Chang, K. H. Chen, J. H. Chen, T. F. Young, J. C. Lou , T. J. Chu, C. C. Shih, J. H. Pan, Y. T. Su, Y. E. Syu, C. W. Tung, M. C. Chen, J. J. Wu, Y. Hu, S. M. Sze, “Electrical Conduction Mechanism of Zn:SiOx Resistance Random Access Memory with Supercritical CO2 Fluid Process”, Appl. Phys. Lett. 103, 083509 (2013). (IF：3.41）
26、K. C. Chang, C. H. Pan, T. C. Chang, T. M. Tsai, R. Zhang, J. C. Lou, T. F. Young, J. H. Chen, C. C. Shih, T. J. Chu, J. Y. Chen, Y. T. Su, J. P. Jiang, K. H. Chen, H. C. Huang, Y. E. Syu, D. S. Gan, Simon M. Sze, “Hopping Effect of Hydrogen-doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment”, IEEE Electron Device Lett., 34(5), 617-619 (2013). (IF: 3.05)
27、K. C. Chang, J. W. Huang, T. C. Chang, T. M. Tsai, K. H. Chen, T. F. Young, J. H. Chen, R. Zhang, J. C. Lou, S. Y. Huang, Y. C. Pan, H. C. Huang, Y. E. Syu, D. S. Gan, D. H. Bao, S. M. Sze, “Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer”, Nanoscale Res. Lett., 8, 523 (2013). (IF: 2.83）
28、K. C. Chang, T. M. Tsai, T. C. Chang, Y. E. Syu, K. H. Liao, S. L. Chuang, C. H. Li, D. S. Gan and S. M. Sze, “The Effect of Silicon Oxide Based RRAM with Tin Doping”, Electrochem. and Solid-State Lett., 15(3), H65-H68 (2012). (IF: 2.32)
29、K. C. Chang, T. M. Tsai, T. C. Chang, Y. E. Syu, Chia-C. Wang, S. K. Liu, S. L. Chuang, C. H. Li, D. S. Gan and S. M. Sze, “Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment”, Appl. Phys. Lett., 99(26), 263501 (2011). (IF：3.41）
30、K. C. Chang, T. M. Tsai, T. C. Chang, Y. E. Syu, H. C. Huang, Y. C. Hung, T. F. Young, D. S. Gan and N. J. Ho, “Low-Temperature Synthesis of ZnO Nanotubes by Supercritical CO2 Fluid Treatment”, Electrochem. and Solid-State Lett., 14 (9), K47-K50 (2011). (IF: 2.32)
京公网安备 11010802027423号