个人简介
焦海龙，博士，北京大学深圳研究生院副教授，博士生导师。2004年于山东大学获得电子信息科学与技术专业学士学位，2008年于中国科学院微电子研究所获得微电子学与固体电子学硕士学位，2012年于香港科技大学获得电子及计算机工程学博士学位。2013年9月加入荷兰埃因霍温理工大学电子工程系，任职Tenure-track Assistant Professor，2016年9月获得终身教职。2015年2月起，兼任比利时鲁汶微电子中心（IMEC）三维集成部门访问研究员。2017年1月全职加入北京大学深圳研究生院信息工程学院。焦海龙博士现任Elsevier Microelectronics Journal (MEJ)及World Scientific Journal of Circuits, Systems, and Computers (JCSC)编委，并长期担任如ISVLSI, SOCC, ASP-DAC等多个IEEE/ACM国际会议的技术委员会成员。
焦海龙博士重点关注超低电压电路设计、容错系统设计、近似计算、存内计算、机器学习在超大规模集成电路中的应用、三维集成电路设计、柔性电子学、碳基电子学等。已在相关领域发表国际期刊及会议论文70余篇。
主要研究成果：
书籍章节
[1] H. Jiao and V. Kursun, “Tri-Mode Operation for Noise Reduction and Data Preservation in Low-Leakage Multi-Threshold CMOS Circuits,” VLSI-SoC: Forward-Looking Trends in IC and System Design, J. L. Ayala, D. A. Atienza, and R. Reis, (Eds.), Springer, pp. 258-290, 2012, ISBN 978-3-642-28565-3.
对计划招收研究生的基本要求：
1. Self-motivated（成功需要的是你个人的追逐，而非导师的鞭策）；
2. 卓越的逻辑思维能力及动手能力；
3. 良好的英语听说读写能力；
实验室关注同学们的个人发展，致力于培养同学们成为具有独立研究能力及独立工程开发能力的科研工作者或者工程师。实验室同时将尽力为同学提供芯片tapeout机会（65-nm/55-nm/28-nm CMOS工艺）,详情参见实验室网页 http://www.PKU-VLSI.com。
近期论文
查看导师新发文章
（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）
[1] H.-M. Lam, F. Guo, H. Qiu, M. Zhang, H. Jiao*, and S. Zhang, “Pseudo Multi-Port SRAM Circuit for Image Processing in Display Drivers,” IEEE Transactions on Circuits and Systems for Video Technology, 2020.
[2] X. Huo^, C. Liao, M. Zhang, H. Jiao*, and S. Zhang, “A Pixel Circuit With Wide Data Voltage Range for OLEDoS Microdisplays With High Uniformity,” IEEE Transactions on Electron Devices, Vol. 66, No. 11, pp. 4798-4804, November 2019.
[3] Y. Sun, W. He, Z. Mao, H. Jiao*, and V. Kursun, “A High-Yield and Robust 9T SRAM Cell Tolerant to Removal of Metallic Carbon Nanotubes,” IEEE Transactions on Device and Materials Reliability, Vol. 17, No. 1, pp. 20-31, March 2017.
[4] H. Jiao and V. Kursun, “Reactivation Noise Suppression with Sleep Signal Slew Rate Modulation in MTCMOS Circuits,” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol. 21, No. 3, pp. 533-545, March 2013.
[5] H. Jiao and V. Kursun, “Threshold Voltage Tuning for Faster Activation with Lower Noise in Tri-Mode MTCMOS Circuits,” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol. 20, No. 4, pp. 741-745, April 2012.
[6] H. Jiao and V. Kursun, “Ground Bouncing Noise Suppression Techniques for Data Preserving Sequential MTCMOS Circuits,” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol. 19, No. 5, pp. 763-773, May 2011.
[7] H. Jiao and V. Kursun, “Ground-Bouncing-Noise-Aware Combinational MTCMOS Circuits,” IEEE Transactions on Circuits and Systems I, Vol. 57, No. 8, pp. 2053-2065, August 2010.
►代表性国际会议论文 (* Corresponding author; ^ Supervised student as first author)
[1] H. Jiao and Z. Zhang, “A Compact Low-Power Data Retention Flip-Flop with Easy-Sleep Mode,” Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS), May 2020.
[2] P. Detterer^, C. Erdin, J. Huisken, H. Jiao, M. Nabi, T. Basten, J. Pineda de Gyvez, “Trading Sensitivity for Power in an IEEE 802.15.4 Conformant Adequate Demodulator,” Proceedings of the IEEE/ACM Conference on Design, Automation and Test in Europe (DATE), March 2020.
[3] K. Singh^, B. de Bruin, J. Huisken, H. Jiao, and J. Pineda de Gyvez, “Voltage Stacked Design of a Microcontroller for Near/Sub-threshold Operation,” Proceedings of the IEEE International SoC Conference (SOCC), pp. 370-375, September 2019.
[4] X. Huo^, W. Bai, H.-M. Lam, C. Liao, M. Zhang, S. Zhang, and H. Jiao*, “A Compact Low-Voltage Segmented D/A Converter with Adjustable Gamma Coefficient for AMOLED Displays,” Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS), pp. 1-5, May 2019.
[5] P. Detterer^, C. Erdin, M. Nabi, J. Pineda de Gyvez, T. Basten, and H. Jiao*, “Trading Digital Accuracy for Power in an RSSI Computation of a Sensor Network Transceiver,” Proceedings of the IEEE/ACM Conference on Design, Automation and Test in Europe (DATE), pp. 102-107, March 2019.
[6] L. Katselas^, A. Hatzopoulos, H. Jiao, C. Papameletis, and E. J. Marinissen, “Embedded Toggle Generator to Provide Realistic Test Conditions during Test of Digital 2D-SoCs and 3D-SICs,” Proceedings of the IEEE International Test Conference (ITC), pp. 1-9, October 2018.
[7] F. Hu^, M. Zhang, and H. Jiao*, “Achieving Low Power Classification with Classifier Ensemble,” Proceedings of the IEEE Computer Society Annual Symposium on VLSI (ISVLSI), pp. 16-21, July 2018.
[8] Y. Li^, M. Shao, H. Jiao, A. Cron, S. Bhatia, and E. J. Marinissen, “IEEE Std P1838’s Flexible Parallel Port and its Specification with Google’s Protocol Buffers,” Proceedings of the IEEE European Test Symposium (ETS), pp. 1-6, May 2018.
[9] K. Singh^, O. A. Rodriguez Rosas, H. Jiao, J. Huisken, and J. Pineda de Gyvez, “Multi-Bit Pulsed-Latch Based Low Power Synchronous Circuit Design,” Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS), pp. 1-5, May 2018.
[10] K. Singh^, H. Jiao, J. Huisken, H. Fatemi, and J. Pineda de Gyvez, “Low Power Latch Based Design with Smart Retiming,” Proceedings of the IEEE/ACM International Symposium on Quality Electronic Design (ISQED), pp. 329-334, March 2018.
[11] M. van Leussen^, J. Huisken, L. Wang, H. Jiao*, and J. Pineda de Gyvez, “Reconfigurable Support Vector Machine Classifier with Approximate Computing,” Proceedings of the IEEE Computer Society Annual Symposium on VLSI (ISVLSI), July 2017.
[12] H. Ahmadi Balef^, H. Jiao, J. Pineda de Gyvez, and K. Goossens, “An Analytical Model for Interdependent Setup/Hold-Time Characterization of Flip-flops,” Proceedings of the IEEE/ACM International Symposium on Quality Electronic Design (ISQED), pp. 209-214, March 2017.
[13] E. J. Marinissen, T. McLaurin, and H. Jiao, “IEEE Std P1838: DfT Standard-under-Development for 2.5D-, 3D-, and 5.5D-SICs,” Proceedings of the IEEE European Test Symposium (ETS), May 2016.
[14] Y. Sun, H. Jiao, and V. Kursun, “Low-Leakage 9-CN-MOSFET SRAM Cell with Enhanced Read and Write Voltage Margins,” Proceedings of the IEEE International Conference on Microelectronics (ICM), pp. 164-167, December 2014 (Best Paper Award).
[15] H. Jiao and V. Kursun, “Ground Gated 8T SRAM Cells with Enhanced Read and Hold Data Stability,” Proceedings of the IEEE Computer Society Annual Symposium on VLSI (ISVLSI), pp. 52-57, August 2013.
[16] S. M. Salahuddin, H. Jiao, and V. Kursun, “A Novel 6T SRAM Cell with Asymmetrically Gate Underlap Engineered FinFETs for Enhanced Read Data Stability and Write Ability,” Proceedings of the IEEE/ACM International Symposium on Quality Electronic Design (ISQED), pp. 353-358, March 2013.
[17] H. Jiao and V. Kursun, “Multi-Phase Sleep Signal Modulation for Mode Transition Noise Mitigation in MTCMOS Circuits,” Proceedings of the IEEE International SoC Design Conference (ISOCC), pp. 466-469, November 2012 (SoC Design Group Award).
[18] H. Jiao and V. Kursun, “Sleep Signal Slew Rate Modulation for Mode Transition Noise Suppression in Ground Gated Integrated Circuits,” Proceedings of the IEEE International SoC Conference (SOCC), pp. 365-370, September 2011.
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