Kawarada, Hiroshi - Waseda University - Faculty of Science and Engineering

个人简介

1978 Bachelor of Engineering, School of Science and Engineering, Waseda University. 1980,Master of Engineering, Graduate School of Science and Engineering,Waseda University. 1980-1982 Semiconductor & Integrated Circuits Division, Hitachi Ltd. 1985 Doctor of Engineering, Graduate School of Science and Engineering,Waseda University. 1986-1990 Assistant Professor, Faculty of Engineering, Osaka University. 1990-1995 Associate Professor, School of Science and Engineering, Waseda University. 1995- present, Professor, School of Science and Engineering, Waseda University. 2009-2010 Director, Research Organization for Nano-science & Nano-technology 2010- Member, Kagami Memorial Research Institute for Materials Science and Technology 1998-2008 Organizer, European Conference on Diamond, Carbon Nanotube, and Related Materials. 2005-2007 Board Member, Japan Applied Physics Society 2009-2014 Chairman, New Diamond Forum 2012- Member, Science Council of Japan 2016 The Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology, Research Category 2017- Visiting Professor, Institute of Materials and Systems for Sustainability, Nagoya University 1995-1996 Research Fellowship, Alexander von Humboldt Foundation Fraunhofer Institute for Applied Solid State Physics 1998-2003 Leader: CREST Project (JST) "Fine structured Diamond Electron Devices Formed by Controlling Surface Adsorbates" 2003-2005 Leader: Grant in Aid for Scientific Research (A) “Development of High Frequency and High Power Transistors by Controlling Diamond Surface Conductivity ” 2007-2011 Team Leader Grant in Aid for Scientific Research (S) “Development of High Power and Millimeter-long Wave Diamond Transistors Using Two Dimensional Hole Gas” 2010- Leader: Low-Carbon Research Network Japan (Lcnet) “Center for Ultra-Low-Loss Power Diamond Transistor” 2011-2013 Leader: Grant in Aid for Scientific Research (A) “High Sensitivity Protein Chip by Aptamer Immobilized Diamond Surface” 2011-2015 Leader: Advanced Low Carbon Technology Research & Development Program (ALCA) “Basic Technologies For Green Inverter Using Large Diameter Diamond Substrates” 2014-2018 Leader: Grant in Aid for Scientific Research (S) “Electron Spin Control of Diamond by Surface Carrier and its Application to Nuclear Spin Detection of Bio-Molecules”

研究领域

Application of Diamond for Biosensing Topics The miniaturized diamond electrolyte solution- gate FET and the highly sensitive DNA-sensors using SGFET Outline of Biosensor using diamond SGFET Carbon nanotubes Topics Application of Carbon Nanotube for LSI Interconnects Application to electrode of electrical double layer capacitor (EDLC) Implantation of Metal Catalyst by Focused Ion Beam Synthesis of long CNTs Hydrogen terminated diamond FETs for high-frequency and high-power devices Superconductivity on Boron Doped Diamond

近期论文

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A. Hiraiwa, K. Horikawa, H. Kawarada "Dynamic space-charge-controlled field emission model of current conduction in metal–insulator–semiconductor capacitors", Journal of Applied Physics, 127, 6, 065307-1/17, (Feb. 12, 2020) (https://doi.org/10.1063/1.5138729) M. Iwataki, N. Oi, K. Horikawa, S. Amano, J. Nishimura,T. Kageura, M. Inaba, A. Hiraiwa, H. Kawarada, "Over 12000 A/cm2 and 3.2 mΩcm2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET" IEEE Electron Dev. Lett., 41, 1, 111-114 (Jan. 2020). (DOI: 10.1109/LED.2019.2953693) T. Kageura, M. Hideko, I. Tsuyuzaki, A. Morishita, A. Kawano, Y. Sasama, T. Yamaguchi, Y. Takano, M. Tachiki, S. Ooi, K. Hirata, S. Arisawa, H. Kawarada, "Single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure", Scientific Reports, 9, 15214/1-9 (Oct. 2019)（https://doi.org/10.1038/s41598-019-51596-w） S. Okubo, K. Horikawa, H. Kawarada, and A. Hiraiwa, "Gate/insulator-interfacial-dipole-controlled current conduction in Al2O3 metal-insulator-semiconductor capacitors," J. Appl. Phys. 126, 045704/1-10 (July 2019) (DOI: 10.1063/1.5089600). M. Inaba, T. Ochiai, K. Ohara, R. Kato, T. Maki, T. Ohashi, H. Kawarada, "Correlation between the carbon nanotube growth rate and byproducts in antenna-type remote plasma chemical vapor deposition observed by vacuum ultraviolet absorption spectroscopy" Small, 15, 1901504/1-8 (July 2019).　(DOI: 10.1002/smll.201901504) M. Inaba, H. Kawarada Y. Ohno, "Electrical property measurement of two-dimensional hole-gas layer on hydrogen-terminated diamond surface in vacuum-gap-gate structure", Applied Physics Letters, 114, 253504/1-5, (June 2019).(DOI: 10.1063/1.5099395) W. Fei, M. Inaba, H. Hoshino, I. Tsuyusaki, S. Kawai, M. Iwataki, H. Kawarada, "Point-arc remote plasma chemical vapor deposition for high-quality single crystal diamond selective growth", Physica Status Solidi A, 1900227/1-6 (June 2019) (DOI: 10.1002/pssa.201900227). M. Haruyama, S. Onoda, T. Higuchi, W. Kada, , A. Chiba, Y. Hirano, T. Teraji, R. Igarashi, S. Kawai, H. Kawarada, Y. Ishii, R. Fukuda, T. Tanii, J. Isoya, T. Ohshima, & O. Hanaizumi, "Triple nitrogen-vacancy centre fabrication by C5N4Hn ion implantation", Nature communications, 10, 1, 2664/1-9 (June 2019) (DOI: 10.1038/s41467-019-10529-x) N. Oi, T. Kudo, M. Inaba, S. Okubo, S. Onoda, A. Hiraiwa, H. Kawarada, "Normally-off Two-Dimensional Hole Gas Diamond MOSFETs Through Nitrogen-ion Implantation", IEEE Electron Device Letters, 40, 6, 933-936, (Jun. 2019) (DOI: 10.1109/LED.2019.2912211) A. Hiraiwa, S. Okubo, K. Horikawa, H.Kawarada, "Advanced photo-assisted capacitance–voltage characterization of insulator/widebandgap semiconductor interface using super-bandgap illumination", Journal of Applied Physics, 125, 17, 175704/1-10 ( May 2019) (DOI: 10.1063/1.5089793) Y. Shintani, S. Ibori, H. Kawarada "Deoxyribonucleic-acid-sensitive Polycrystalline Diamond Solution-gate Field-effect Transistor with Carboxyl-terminated boron-doped Channel", Analytical Sciences, 35, 8, 923-927, (Aug. 2019) (DOI: 10.2116/analsci.18P520). E. Suaebah, M. Hasegawa, J. J. Buendia, W. Fei, M. Chandran, A. Hoffman, H. Kawarada, "Functionalization of a Diamond Surface through N2 and H2 Irradiation for Estrogen (17β-estradiol) Aptamer Sensing ", Sensors and Materials, 31, 4(1), 1119-1134 (Apr. 2019) (DOI: 10.18494/SAM.2019.2231) Open Access S. Kono, T. Kageura, Y. Hayashi, S.-G. Ri, T. Teraji, D. Takeuchi, M. Ogura, H. Kodama, A. Sawabe, M. Inaba, A. Hiraiwa, H. Kawarada　"Carbon 1s X-ray photoelectron spectra of realistic samples of hydrogen-terminated and oxygen-terminated CVD diamond (111) and (001) ", Diamond and Related Materials, 93, 105-130. (March 2019) (https://doi.org/10.1016/j.diamond.2019.01.017) S. Imanishi, K. Horikawa, N. Oi, S. Okubo, T. Kageura, A. Hiraiwa, H. Kawarada, "3.8 W/mm power density for ALD Al2 O 3 -based two-dimensional hole gas diamond MOSFET operating at saturation velocity", IEEE Electron Device Letters, 40 (2), 279-282, (Feb. 2019) (DOI: 10.1109/LED.2018.2886596) S. Kawai, H. Yamano, T. Sonoda, K. Kato, J. J. Buendia, T. Kageura,R. Fukuda, T. Okada, T. Tanii, T.Higuchi, M. Haruyama, K. Yamada, S. Onoda, T. Ohshima, W. Kada, O. Hanaizumi, A. Stacey, T. Teraji, S. Kono, J. Isoya, H.Kawarada, "Nitrogen-Terminated Diamond Surface for Nanoscale NMR by Shallow Nitrogen-Vacancy Centers", 2019 Jan., The Journal of Physical Chemistry C, 123 (6), 3594-3604. (Jan. 2019) (DOI: 10.1021/acs.jpcc.8b11274) S.Falina, M.Syamsul, Y.Iyama, M.Hasegawa, Y.Koga, H.Kawarada, "Carboxyl-functionalized graphene SGFET: pH sensing mechanism and reliability of anodization", Diamond and Related Materials, 91, 15-21, (Jan. 2019)( https://doi.org/10.1016/j.diamond.2018.11.005 ) D. L. Creedon, Y. Jiang, K. Ganesan, A. Stacey, T. Kageura, H. Kawarada, J. C. McCallum, B. C. Johnson, S. Prawer, D. N. Jamieson, "Irradiation-Induced Modification of the Superconducting Properties of Heavily-Boron-Doped Diamond" Physical Review Applied, 10 (4), 044016/1-8 (Oct. 2018). (DOI: 10.1103/PhysRevApplied.10.044016) T. Yamaguchi, Y. Sasama, H. Takeya, Y. Takano, T. Kageura, H. Kawarada, "Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures", Review of Scientific Instruments, 89 (10), 103903/1-5 (Oct. 2018). (DOI: 10.1063/1.5041936) T. Kageura, M. Hideko, I. Tsuyuzaki, S. Amano, A. Morishita, T. Yamaguchi, Y. Takano, H. Kawarada "Superconductivity in nano- and micro-patterned high quality single crystalline boron-doped diamond films", Diamond and Related Materials, 90, 181-187(Nov. 2018), (https://doi.org/10.1016/j.diamond.2018.10.013) R. Fukuda, P. Balasubramanian, I. Higashimata, G. Koike, T. Okada, R. Kagami, T. Teraji, S. Onoda, M. Haruyama, K. Yamada, M. Inaba, H. Yamano, F. M. Stürner, S. Schmitt, L. P. McGuinness, F. Jelezko, T. Ohshima, T. Shinada, H.Kawarada, W. Kada & 3 others, "Lithographically engineered shallow nitrogen-vacancy centers in diamond for external nuclear spin sensing", New Journal of Physics, 20(8), 083029/1-9(Aug. 2018)(DOI: 10.1088/1367-2630/aad997) S. Falina, S. Kawai, N. Oi, H. Yamano, T. Kageura, E. Suaebah, M. Inaba, Y. Shintani, M. Syamsul, H. Kawarada, "Role of carboxyl and amine termination on a boron-doped diamond solution gate field effect transistor (SGFET) for PH sensing" Sensors 2018, 18(7), 2178/1-10 (July 2018), (DOI:10.3390/s18072178) N. Oi, M. Inaba, S. Okubo, I. Tsuyuzaki, T. Kageura, S. Onoda, A. Hiraiwa H.Kawarada "Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors", Scientific Reports. 8, 10660/1-10 (July 2018) (DOI:10.1038/s41598-018-28837-5) S. Falina, S. Kawai, N. Oi, H. Yamano, T. Kageura, E. Suaebah, M. Inaba, Y. Shintani, M. Syamsul, H. Kawarada, "Role of carboxyl and amine termination on a boron-doped diamond solution gate field effect transistor (SGFET) for PH sensing" Sensors 2018, 18(7), 2178/1-10 (July 2018), (DOI:10.3390/s18072178) N. Oi, M. Inaba, S. Okubo, I. Tsuyuzaki, T. Kageura, S. Onoda, A. Hiraiwa H.Kawarada "Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors", Scientific Reports. 8, 10660/1-10 (July 2018) (DOI:10.1038/s41598-018-28837-5) Hiroshi Kawarada, “High voltage p-channel MOSFETs using two-dimensional hole gas", in Power Electronics Device Applications of Diamond Semiconductors, Eds. Satoshi Koizumi, Hitoshi Umezawa, Julien Pernot, Mariko Suzuki (Woodhead Publishing, June 2018), 347-359. (ISBN: 978-0-08-102183-5) M. Inaba, K. Ohara, M. Shibuya, T. Ochiai, D. Yokoyama, W. Norimatsu, M. Kusunoki, H. Kawarada, "Electrical contact properties between carbon nanotube ends and a conductive atomic force microscope tip" J. Appl. Phys. 123, 244502/1-8 (June 2018). (DOI: 10.1063/1.5027849) A. Hiraiwa, T. Sasaki, S. Okubo, K. Horikawa, and H. Kawarada, "Time-dependent dielectric breakdown of atomic-layer-deposited Al2O3 films on GaN," J. Appl. Phys. 123, 155303/1-9 (19 April 2018). (DOI:10.1063/1.5022338) Mohd Syamsul, N. Oi, S. Okubo, T. Kageura, H. Kawarada, “Heteroepitaxial diamond field-effect transistor for high voltage applications”, IEEE Electron Device Letters, 39, 1, 51-54, (Jan.2018)(DOI: 10.1109/LED.2017.2774290) K. Matsuda, W. Norimatsu, J. Bao, H. Kawarada, M. Kusunoki, "In-plane electrical conduction mechanisms of highly dense carbon nanotube forests on silicon carbide," J. Appl. Phys. 123, 145104/1-7 (28 Jan. 2018) (DOI:10.1063/1.5004507)