近期论文
查看导师新发文章
（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）
2017年论文：
[1]Wang,Yucheng;Zhang,Yuming;Liu,Yintao;Pang,Tiqiang;Hu,Ziyang;Zhu,Yuejin;Luan,Suzhen;Jia,Renxu;Temperature-dependencestudiesoforganoleadhalideperovskite-basedmetal/semiconductor/metalphotodetectorsRSCAdvances73320206-202112017
[2]Wang,Yucheng;Zhang,Yuming;Pang,Tiqiang;Xu,Jie;Hu,Ziyang;Zhu,Yuejin;Tang,Xiaoyan;Luan,Suzhen;Jia,Renxu;Ionicbehavioroforganic–inorganicmetalhalideperovskitebasedmetal-oxide-semiconductorcapacitorsPhysicalChemistryChemicalPhysics2017
[3]Dong,Linpeng;Jia,Renxu;Li,Chong;Xin,Bin;Zhang,Yuming;AbinitiostudyofN-dopedβ-Ga2O3withintrinsicdefects:thestructural,electronicandopticalpropertiesJournalofAlloysandCompounds712379-3852017
[4]Peng,B;Zhang,YM;Dong,LP;Wang,YT;Jia,RX;Theeffectofionsonthemagneticmomentofvacancyforion-implanted4H-SiCJournalofAppliedPhysics121131339042017
[5]Liu,Yintao;Jia,Renxu;Wang,Yucheng;Hu,Ziyang;Zhang,Yuming;Pang,Tiqiang;Zhu,Yuejin;Luan,Suzhen;InhibitionofZeroDriftinPerovskite-BasedPhotodetectorDevicesvia[6,6]-Phenyl-C61-butyricAcidMethylEsterDopingACSAppliedMaterials&Interfaces91815638-156432017
[6]Ma,Xiaofan;Zhang,Yuming;Dong,Linpeng;Jia,Renxu;First-principlescalculationsofelectronicandopticalpropertiesofaluminum-dopedβ-Ga2O3withintrinsicdefectsResultsinPhysics71582-15892017Elsevier
2016年论文：
[1]L.Dong,R.Jia*,B.Xin,B.Peng,Y.Zhang,Effectsofoxygenvacanciesonthestructuralandopticalpropertiesofbeta-Ga2O3,Scientificreports,7(2017)40160.
[2]B.Xin,Y.-M.Zhang,H.-M.Wu,Z.C.Feng,H.-H.Lin,R.-X.Jia*,KineticmechanismofV-shapedtwinningin3C/4H-SiCheteroepitaxy,JournalofVacuumScience&TechnologyA:Vacuum,Surfaces,andFilms,34(2016)031104.
[3]B.Xin,R.-X.Jia*,J.-C.Hu,Y.-M.Zhang,Super-V-shapedstructureon3C-SiCgrownontheC-faceof4H-SiC,JournalofPhysicsD:AppliedPhysics,49(2016)335305.
[4]Y.Wang,R.Jia,*Y.Zhao,C.Li,Y.Zhang,InvestigationofLeakageCurrentMechanismsinLa2O3/SiO2/4H-SiCMOSCapacitorswithVariedSiO2Thickness,JournalofElectronicMaterials,45(2016)5600-5605.
[5]B.Peng,R.X.Jia*,Y.T.Wang,L.P.Dong,J.C.Hu,Y.M.Zhang,Concentrationofpointdefectsin4H-SiCcharacterizedbyamagneticmeasurement,AipAdv,6(2016)095201.
[6]J.Hu,R.Jia*,B.Xin,B.Peng,Y.Wang,Y.Zhang,EffectofLowPressureonSurfaceRoughnessandMorphologicalDefectsof4H-SiCEpitaxialla[ant]yers,Materials,9(2016)743.
[7]L.Dong,R.Jia*,B.Xin,Y.Zhang,Effectsofpost-annealingtemperatureandoxygenconcentrationduringsputteringonthestructuralandopticalpropertiesofβ-Ga2O3films,JournalofVacuumScience&TechnologyA:Vacuum,Surfaces,andFilms,34(2016)060602.
2015年之前的论文
[1]B.Xin,Y.-M.Zhang,H.-M.Wu,Z.C.Feng,H.-H.Lin,R.-X.Jia*,KineticmechanismofV-shapedtwinningin3C/4H-SiCheteroepitaxy,JournalofVacuumScience&TechnologyA:Vacuum,Surfaces,andFilms34(3)(2016)031104.
[2]M.Lei,Y.Sheng,L.Wan,K.Bi,K.Huang,R.X.Jia*,J.Liu,Y.G.Wang,Anovelself-catalyticroutetozincstannatenanowiresandcathodoluminescenceandelectricaltransportpropertiesofasinglenanowire,JAlloyCompd657(2016)394-399.
[3]B.Xin,R.X.Jia*,J.C.Hu,C.Y.Tsai,H.H.Lin,Y.M.Zhang,Astep-by-stepexperimentof3C-SiChetero-epitaxialgrowthon4H-SiCbyCVD,ApplSurfSci357(2015)985-993.
[4]Y.C.Wang,R.X.Jia*,C.Z.Li,Y.M.Zhang,ElectricpropertiesofLa2O3/SiO2/4H-SiCMOScapacitorswithdifferentannealingtemperatures,AipAdv5(8)(2015).
[5]Y.P.Liu,W.W.Zhong,Y.X.Du,Q.X.Yuan,X.Wang,R.X.Jia*,NovelradialvanadiumpentoxidenanobeltclustersforLi-ionbatteries,JAlloyCompd633(2015)353-358.
[6]M.Lei,K.Bi,Y.B.Zhang,K.Huang,X.L.Fu,X.Wang,R.X.Jia*,H.J.Yang,D.Y.Fan,Y.G.Wang,HighlyselectivegrowthofTiO2nanoparticlesononetipofCdSnanowires,JAlloyCompd646(2015)1004-1008.
[7]R.X.Jia*,L.P.Dong,Y.X.Niu,C.Z.Li,Q.W.Song,X.Y.Tang,F.Yang,Y.M.Zhang,Energy-bandalignmentofatomicla[ant]yerdeposited(HfO2)(x)(Al2O3)(1-x)gatedielectricson4H-SiC,ChinesePhysB24(3)(2015).
[8]H.Yan,R.Jia*,X.Tang,Q.Song,Y.Zhang,Effectofre-oxidationannealingprocessontheSiO2/SiCinterfacecharacteristics,JournalofSemiconductors35(6)(2014)066001.
[9]S.Lin,X.S.Zhao,Y.F.Li,K.Huang,R.X.Jia*,C.Liang,X.Xu,Y.F.Zhou,H.Wang,D.Y.Fan,H.J.Yang,R.Zhang,Y.G.Wang,M.Lei,RGO-supportedbeta-SiCnanoparticlesbyafacilesolvothermalrouteandtheirenhancedadsorptionandphotocatalyticactivity,MaterLett132(2014)380-383.
[10]R.X.Jia*,H.L.Yan,W.J.Liu,M.Lei,Periodicsolitonsindispersiondecreasingfiberswithacosineprofile,ChinesePhysB23(10)(2014).
[11]R.X.Jia*,Y.C.Wang,W.J.Liu,M.Lei,Breathersandsolitonsinnonlinearopticalmaterials,JElectromagnetWave28(7)(2014)873-879.
[12]R.X.Jia*,S.C.Liu,H.D.Xu,Z.T.Chen,X.Y.Tang,F.Yang,Y.X.Niu,StudyonGrovemodelofthe4H-SiChomoepitaxialgrowth,ActaPhysSin-ChEd63(3)(2014).
[13]R.X.Jia*,Y.C.Wang,W.J.Liu,M.Lei,Solitoninteractionsindispersion-decreasingfiberswiththeexponentialdispersionprofile,JModOptic60(21)(2013)1993-1997.
[14]R.X.Jia,Y.M.Zhang,Y.M.Zhang,Reductionofdeepleveldefectsinunintentionallydoped4H-SiChomo-epil[ant]ayersbyionimplantation,JWuhanUnivTechnol27(3)(2012)415-417.
[15]Y.H.Wang,Y.M.Zhang,Y.M.Zhang,Q.W.Song,R.X.Jia,Al/Ti/4H-SiCSchottkybarrierdiodeswithinhomogeneousbarrierheights,ChinesePhysB20(8)(2011).
[16]Y.Gu,Y.M.Zhang,Y.M.Zhang,H.L.Lu,R.X.Jia,AnalysisandSimulationofInverterEmployingSiCSchottkyDiode,2011InternationalConferenceOfElectronDevicesAndSolid-StateCircuits(Edssc)(2011).
[17]Y.H.Wang,Y.M.Zhang,Y.M.Zhang,L.Zhang,R.X.Jia,D.Chen,SiCepitaxialla[ant]yersgrownbychemicalvapourdepositionandthefabricationofSchottkybarrierdiodes,ChinesePhysB19(3)(2010).
[18]R.X.Jia,Y.M.Zhang,Y.M.Zhang,H.Guo,CalculationofDislocationDestinyUsingX-RayDiffractionfor4H-SiCHomoepitaxialla[ant]yers,SpectroscSpectAnal30(7)(2010)1995-1997.
[19]R.X.Jia,Y.M.Zhang,Y.M.Zhang,First-principlecalculationonthedefectenergylevelofcarbonvacancyin4H-SiC,ChinesePhysB19(10)(2010).
[20]D.Chen,Y.M.Zhang,Y.M.Zhang,Y.H.Wang,R.X.Jia,Characterizationoftheheteroepitaxialgrowthof3C-SiConSiduringlowpressurechemicalvapordeposition,ChineseSciBull55(27-28)(2010)3102-3106.
[21]Y.H.Wang,Y.M.Zhang,Y.M.Zhang,R.X.Jia,D.Chen,SiCepitaxialla[ant]yersgrownbychemicalvapordeposition,ExtendedAbstracts2008InternationalWorkshoponJunctionTechnology(2008)210-212.
[22]W.Jia,Y.M.Zhang,Y.M.Zhang,R.X.Jia,H.Guo,SimulationofSiCdepositioninahotwallCVDreactor,PSocPhoto-OptIns6984(2008).
[23]R.X.Jia,Y.M.Zhang,Y.M.Zhang,Y.H.Wang,Nitrogendoped4H-SiChomoepitaxialla[ant]yersgrownbyCVD,ActaPhysSin-ChEd57(10)(2008)6649-6653.
[24]R.X.Jia,Y.M.Zhang,Y.M.Zhang,Y.E.Wang,Nitrogenincorporationcharacteristicsof4H-SiCepitaxialla[ant]yer-art.no.69840V,PSocPhoto-OptIns6984(2008)V9840-V9840.
[25]R.X.Jia,Y.M.Zhang,Y.M.Zhang,H.Guo,S.Z.Loan,TherelationbetweenGreen-bandluminescenceof4H-SiChomoepitaxialla[ant]yeranddefects,ActaPhysSin-ChEd57(7)(2008)4456-4458.
京公网安备 11010802027423号