个人简介
个人简介
副教授，硕士生导师，2004年毕业于西安电子科技大学电子科学与技术专业，2009年3月获得西安电子科技大学微电子学与固体电子学专业博士学位，2009年4月留教于西安电子科技大学机电工程学院，2011年晋升副教授，同年遴选为硕士生导师。
主要进行VLSI器件新材料器件及其可靠性研究与电子封装及其可靠性研究。
在国内外知名期刊上发表论文四十余篇，均被SCI、EI检索；申请及获批发明专利多项；获陕西省科学技术奖一等奖一项。
主持并参与了多项课题研究，包括国家973计划、国家自然科学基金、航天合作等项目。
科学研究
承担的科研项目：
国家自然科学基金基金项目，国家973项目，航天合作课题，中央高校基本业务费项目；
发表的论文：
截止2015年12月，共计发表论文45篇，均被SCI、EI检索；
申请的专利：
截止2015年12月，共计申请专利11项，其中获批6项；
荣誉获奖：
2011年获陕西省科学技术奖一等奖一项。
申请专利：
[1]毛维；郝跃；杨翠；李洋洋；王冲；郑雪峰；杜鸣；刘红侠；曹艳荣绝缘栅型直角源场板高电子迁移率器件及其制作方法2015/3/11,陕西,CN201410658088.6.
[2]毛维；葛安奎；郝跃；边照科；石朋毫；张进成；马晓华；张金风；杨林安；曹艳荣介质调制复合交叠栅功率器件
2015/3/4,陕西,CN201410658234.5.
[3]郑雪峰；范爽；孙伟伟；张建坤；康迪；王冲；杜鸣；曹艳荣；马晓华；郝跃HEMT器件栅泄漏电流中台面泄漏电流的测试方法2014/9/24,陕西,CN201410319025.8.
[4]郑雪峰；范爽；康迪；王冲；张建坤；杜鸣；毛维；曹艳荣；马晓华；郝跃测试HEMT器件体泄漏电流和表面泄漏电流的方法2014/9/24,陕西,CN201410317290.2.
[5]曹艳荣；杨毅；郝跃；马晓华；田文超；许晟瑞；郑雪峰一种测试MOS器件沟道不均匀损伤的方法2014/8/13,陕西,CN201410228195.5.
[6]田文超；阮红芳；杨银堂；曹艳荣折梁屈曲射频微开关2011/11/16,陕西,中华人民共和国国家知识产权局,CN201110075734.2.
[7]郝跃；许晟瑞；薛军帅；周小伟；张进成；曹艳荣；蔡冒世；王昊基于γ面LiAlO2衬底上非极性m面GaN的MOCVD生长方法2010/12/1,陕西,中华人民共和国国家知识产权局,CN201010209568.6.
[8]郝跃；许晟瑞；张进成；杨林安；王昊；陈珂；曹艳荣；杨传凯基于c面SiC衬底上极性c面GaN的MOCVD生长方法
2010/12/1,陕西,中华人民共和国国家知识产权局,CN201010209567.1.
[9]马晓华；曹艳荣；郝跃；高海霞；王冲；杨凌AlGaN/GaN高电子迁移率晶体管及其制作方法2010/10/6,陕西,中华人民共和国国家知识产权局,CN201010120734.5.
[10]王冲；郝跃；马晓华；张进城；曹艳荣；杨凌全透明AlGaN/GaN高电子迁移率晶体管及其制作方法2010/7/7,陕西,中华人民共和国国家知识产权局,CN201010013536.9.
[11]马晓华；郝跃；曹艳荣；王冲；高海霞；杨凌AlGaN/GaN绝缘栅高电子迁移率晶体管及其制作方法2010/5/19,陕西,中华人民共和国国家知识产权局,CN200910218717.2.
荣誉获奖
2011年获陕西省科学技术奖一等奖
科研团队
教师：
曹艳荣
硕士研究生8人。
课程教学
承担的教学任务：
微电子技术概论，本科专业课；
电子设备可靠性工程，本科专业课；
近期论文
查看导师最新文章
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学术论文：
[1]曹艳荣;杨毅;曹成;何文龙;郑雪峰;马晓华;郝跃RecoveryofPMOSFETNBTIunderdifferentconditionsChinesePhysicsB,09期,pp488-492,2015/9/15.
[2]Lv,Ling;Ma,Xiaohua;Xi,He;Liu,Linyue;Cao,Yanrong;Zhang,Jincheng;Shan,Hengsheng;Hao,YueTheoreticalanalysisofprotonirradiationeffectsonAlGaN/GaNhigh-electron-mobilitytransistorsJournalofVacuumScienceandTechnologyB:NanotechnologyandMicroelectronics,33(5),pp051212-1-051212-6,2015/9/1.
[3]SunWei-Wei;*ZhengXue-Feng;FanShuang;WangChong;DuMing;ZhangKai;ChenWei-Wei;CaoYan-Rong;MaoWei;MaXiao-Hua;ZhangJin-Cheng;HaoYueDegradationmechanismofenhancement-modeAlGaN/GaNHEMTsusingfluorineionimplantationundertheon-stategateoverdrivestressChinesePhysicsB,24(1),2015/1.
[4]*CaoYan-Rong;HeWen-Long;CaoCheng;YangYi;ZhengXue-Feng;MaXiao-Hua;HaoYueEffectofgatelengthontheparameterdegradationrelationsofPMOSFETunderNBTIstressChinesePhysicsB,23(11),2014/11.
[5]*Cao,Yanrong；Yang,Yi；Cao,Cheng；He,Wenlong；Zheng,Xuefeng；Ma,Xiaohua；Hao,YuePMOSFET器件NBTI在不同周期下的恢复研究201412thIEEEInternationalConferenceonSolid-StateandIntegratedCircuitTechnology，ICSICT2014，2014/10/28-2014/10/31，Guilin，China，2014.
[6]*LuLing;ZhangJin-Cheng;LiLiang;MaXiao-Hua;CaoYan-Rong;HaoYueEffectsof3MeVprotonirradiationsonAlGaN/GaNhighelectronmobilitytransistorsActaPhysicaSinica,61(5),2012/3.
[7]S.R.Xu;J.C.Zhang;Y.R.Cao;X.W.Zhou;J.S.Xue;Z.Y.Lin;J.C.Ma;F.Bao;Y.HaoImprovementsin(112̅2)semipolarGaNcrystalqualitybygradedsuperlatticesThinSolidFilms,520(6),pp1909-1912,2012/1/1.
[8]LingLv;J.G.Ma;Y.R.Cao;J.C.Zhang;W.Zhang;L.Li;S.R.Xu;X.H.Ma;X.T.Ren;Y.HaoStudyofprotonirradiationeffectsonAlGaN/GaNhighelectronmobilitytransistorsMicroelectronicsReliability,51(12),pp2168-2172,2011/12.
[9]*BiZhiWei;HaoYue;FengQian;JiangTingTing;CaoYanRong;ZhangJinCheng;MaoWei;LuLing;ZhangYueThepassivationmechanismofnitrogenionsonthegateleakagecurrentofHfO2/AlGaN/GaNMOS-HEMTsScienceChinaPhysics,Mechanics&Astonomy,54(12),pp2170-2173,2011/12.
[10]BiZhi-Wei;HuZhen-Hua;MaoWei;*HaoYue;FengQian;CaoYan-Rong;GaoZhi-Yuan;ZhangJin-Cheng;MaXiao-Hua;ChangYong-Ming;LiZhi-Ming;MeiNanInvestigationofpassivationeffectsinAlGaN/GaNme[ant]tal-insulator-semiconductorhighelectron-mobilitytransistorbygate-drainconductancedispersionstudyChinesePhysicsB,20(8),2011/8.
[11]S.R.Xu;J.C.Zhang;L.A.Yang;X.W.Zhou;Y.R.Cao;J.F.Zhang;J.S.Xue;Z.Y.Liu;J.C.Ma;F.Bao;Y.HaoDefectreductionin(112̄0)nonpolara-planeGaNgrownonr-planesapphireusingTiNinterla[ant]yersJournalofCrystalGrowth,327(1),pp94-97,2011/7/15.
[12]*MaXiao-Hua;CaoYan-Rong;HaoYue;ZhangYueHotcarrierinjectiondegradationunderdynamicstressChinesePhysicsB,20(3),2011/3.
[13]*CaoYan-Rong;MaXiao-Hua;HaoYue;ZhuMin-Bo;TianWen-Chao;ZhangYueNegativeBiasTemperatureInstability"Recovery"underNegativeStressVoltagewithDifferentOxideThicknessesChinesePhysicsLetters,28(1),2011/1.
[14]*Wenchao,Tian;Yanrong,Cao;Hao,SunSimulationofreconfigurableantennabasedonRFswitch201112thInternationalConferenceonElectronicPackagingTechnologyandHighDensityPackaging,ICEPT-HDP2011,2011/8/8-2011/8/11,pp482-484,Shanghai,China,2011.
[15]*Wenchao,Tian;Yanrong,Cao;Hongming,WangAnalysisofreconfigurableantennawithKandKuwavebandsbasedonRFswitch2011InternationalSymposiumonAdvancedPackagingMaterials,APM2011,2011/10/25-2011/10/28,pp109-111,Xiamen,China,2011.
[16]S.R.Xu;Y.Hao;J.C.Zhang;Y.R.Cao;X.W.Zhou;L.A.Yang;X.X.Ou;K.Chen;W.MaoPolardependenceofimpurityincorporationandyellowluminescenceinGaNfilmsgrownbyme[ant]tal-organicchemicalvapordeposition
JournalofCrystalGrowth,312(23),pp3521-3524,2010/11/15.
[17]*MaXiao-Hua;CaoYan-Rong;HaoYueStudyonthenegativebiastemperatureinstabilityeffectunderdynamicstressChinesePhysicsB,19(11),2010/11.
[18]*XuSheng-Rui;HaoYue;ZhangJin-Cheng;ZhouXiao-Wei;CaoYan-Rong;OuXin-Xiu;MaoWei;DuDa-Chao;WangHaoTheetchingofa-planeGaNepil[ant]ayersgrownbyme[ant]tal-organicchemicalvapourdepositionChinesePhysicsB,19(10),2010/10.
[19]*CaoYan-Rong;MaXiao-Hua;HaoYue;TianWen-ChaoThestudyonmechanismandmodelofnegativebiastemperatureinstabilitydegradationinP-channelme[ant]tal-oxide-semiconductorfield-effecttransistorsChinesePhysicsB,19(9),2010/9.
[20]*XuShengRui;ZhouXiaoWei;HaoYue;YangLiNan;ZhangJinCheng;MaoWei;YangCui;CaiMaoShi;OuXinXiu;ShiLinYu;CaoYanRongOpticalandelectricalpropertiesofSi-dopedina-planeGaNgrownonr-planesapphireScienceinChina-SeriesE:TechnologicalSciences,53(9),pp2363-2366,2010/9.
[21]*Cao,Yan-Rong;Ma,Xiao-Hua;Hao,Yue;Tian,Wen-ChaoThestudyonmechanismandmodelofNegativeBiasTemperatureInstabilitydegradationinP-channelme[ant]tal-oxide-semiconductorfield-effecttransistorsChinesePhysicsB,19(9),pp097306-1-097306-6,2010/9.
[22]*Xu,Shengrui;Zhou,Xiaowei;Hao,Yue;Yang,Linan;Zhang,Jincheng;Mao,Wei;Yang,Cui;Cai,Maoshi;Ou,Xinxiu;Shi,Linyu;Cao,YanrongOpticalandelectricalpropertiesofSi-dopedina-planeGaNgrownonr-planesapphireScienceinChina-SeriesE:TechnologicalSciences,53(9),pp2363-2366,2010/9.
[23]*MaXiao-Hua;GaoHai-Xia;CaoYan-Rong;ChenHai-Feng;HaoYueTheAnomalousEffectofInterfaceTrapsonGenerationCurrentinLightlyDopedDrainnMOSFET'sChinesePhysicsLetters,27(5),2010/5.
[24]*CaoYan-Rong;MaXiao-Hua;HaoYue;HuShi-GangStudyonthedrainbiaseffectonnegativebiastemperatureinstabilitydegradationofanultra-shortp-channelme[ant]tal-oxide-semiconductorfield-effecttransistorChinesePhysicsB,19(4),2010/4.
[25]*CaoYan-Rong;MaXiao-Hua;HaoYue;TianWen-ChaoEffectofChannelLengthandWidthonNBTIinUltraDeepSub-MicronPMOSFETsChinesePhysicsLetters,27(3),2010/3.
[26]*Zhang,Yue;Li,Miao;Li,Yan-Feng;Ma,Xiao-Hua;Cao,Yan-Rong;Hao,YueAnimprovedstaticNBTImodelwithphysicalgeometryscaling201010thIEEEInternationalConferenceonSolid-StateandIntegratedCircuitTechnology,2010/11/1-2010/11/4,pp1624-1626,Shanghai,China,2010.
[27]*HuShi-Gang;HaoYue;MaXiao-Hua;CaoYan-Rong;ChenChi;WuXiao-FengStudyonthedegradationofNMOSFETswithultra-thingateoxideunderchannelhotelectronstressathightemperatureChinesePhysicsB,18(12),pp5479-5484,2009/12.
[28]*Ma,X.H.;Cao,Y.R.;Gao,H.X.;Chen,H.F.;Hao,Y.Behaviorsofgateinduceddrainleakagestressinlightlydopeddrainn-channelme[ant]tal-oxide-semiconductorfield-effecttransistorsAppliedPhysicsLetters,95(15),2009/10/12.
[29]S.R.Xu;Y.Hao;J.C.Zhang;X.W.Zhou;L.A.Yang;J.F.Zhang;H.T.Duan;Z.M.Li;M.Wei;S.G.Hu;Y.R.Cao;Q.W.Zhu;Z.H.Xu;W.P.GuImprovementsina-planeGaNcrystalqualitybyAlN/AlGaNsuperlatticesla[ant]yersJournalofCrystalGrowth,311(14),pp3622-3625,2009/7/1.
[30]*CaoYan-Rong;HaoYue;MaXiao-Hua;HuShi-GangEffectofsubstratebiasonnegativebiastemperatureinstabilityofultra-deepsub-microp-channelme[ant]tal-oxide-semiconductorfield-effecttransistorsChinesePhysicsB,18(1),pp309-314,2009/1.
[31]*HuShi-Gang;HaoYue;MaXiao-Hua;CaoYan-Rong;ChenChi;WuXiao-FengHot-CarrierStressEffectsonGIDLandSILCin90nmLDD-MOSFETwithUltra-ThinGateOxideChinesePhysicsLetters,26(1),2009/1.
[32]*Hu,Shigang;Hao,Yue;Cao,Yanrong;Ma,Xiaohua;Wu,Xiaofeng;Chen,Chi;Zhou,QingjunDegradationofultra-thingateoxideLDDNMOSFETunderGIDLstressChineseJournalofSemiconductors,30(4),pp044004-1-044004-4,2009.
[33]*HuShi-Gang;CaoYan-Rong;HaoYue;MaXiao-Hua;ChenChi;WuXiao-Feng;ZhouQing-JunDegradationofUltra-ThinGateOxideNMOSFETsunderCVDTandSHEStressesChinesePhysicsLetters,25(11),pp4109-4112,2008/11.
[34]*Hu,Shigang;Hao,Yue;Ma,Xiaohua;Cao,Yanrong;Chen,Chi;Wu,XiaofengDegradationofnMOSandpMOSFETswithultrathingateoxideunderDTstressPanTaoTiHsuehPao/chineseJournalofSemiconductors,29(11),pp2136-2142,2008/11.
[35]*CaoYan-Rong;HuShi-Gang;MaXiao-Hua;HaoYueMechanismofNBTIrecoveryundernegativevoltagestress
ChinesePhysicsLetters,25(9),pp3393-3396,2008/9.
[36]Cao,Yan-Rong;*Hao,Yue;Ma,Xiao-Hua;Yu,Lei;Hu,Shi-GangSILCduringNBTIstressinPMOSFETswithultra-thinSiONgatedielectricsChinesePhysicsLetters,25(4),pp1427-1430,2008/4.
[37]*Chen,Hai-Feng;Hao,Yue;Ma,Xiao-Hua;Cao,Yan-Rong;Gao,Zhi-Yuan;Gong,XinComparisonofhot-holeinjectionsinultrashortchannelLDDnMOSFETswithultrathinoxideunderanalternatingstressChinesePhysics,16(10),pp3114-3119,2007/10/1.
[38]*Cao,Yanrong;Ma,Xiaohua;Hao,Yue;Yu,Lei;Zhu,Zhiwei;Chen,HaifengModelsandrelatedmechanismsofNBTIdegradationof90nmpMOSFETsPanTaoTiHsuehPao/chineseJournalofSemiconductors,28(5),pp665-669,2007/5.
[39]Chen,Hai-Feng;Hao,Yue;Ma,Xiao-Hua;Tang,Yu;Meng,Zhi-Qin;Cao,Yan-Rong;Zhou,Peng-JuCharacteristicsofdegradationunderGIDLstressinultrathingateoxideLDDnMOSFET'sActaPhysicaSinica,56(3),pp1662-1667,2007/3.
[40]Zhu,Zhi-Wei;Hao,Yue;Ma,Xiao-Hua;Cao,Yan-Rong;Liu,Hong-XiaInvestigationofsnapbackstressinducedgateoxidedefectforNMOSFET'sin90nmtechnologyActaPhysicaSinica,56(2),pp1075-1081,2007/2.
[41]*Chen,Haifeng;Hao,Yue;Zhu,Zhiwei;Ma,Xiaohua;Cao,YanrongInvestigationofgate-induceddrainleakagecurrentinultra-thingateoxideLDDnMOSFET'sICSICT-2006:20068thInternationalConferenceonSolid-StateandIntegratedCircuitTechnology,2006/10/23-2006/10/26,pp1159-1161,Shanghai,China,2007.
[42]*Ma,Xiao-Hua;Hao,Yue;Wang,Jian-Ping;Cao,Yan-Rong;Chen,Hai-FengNewaspectsofHCItestforultra-shortchanneln-MOSFETdevicesChinesePhysics,15(11),pp2742-2745,2006/11/1.
[43]Ma,Xiao-Hua;Hao,Yue;Chen,Hai-Feng;Cao,Yan-Rong;Zhou,Peng-JuThebreakdowncharacteristicsofultra-thingateoxiden-MOSFETundervoltagestressActaPhysicaSinica,55(11),pp6118-6122,2006/11.
[44]*Cao,Yanrong;Ma,Xiaohua;Hao,Yue;Yu,LeiCharacteristicsofgroove-gateMOSFETsPanTaoTiHsuehPao/chineseJournalofSemiconductors,27(11),pp1994-1999,2006/11.
[45]*Chen,Haifeng;Ma,Xiaohua;Hao,Yue;Cao,Yanrong;Huang,Jianfang;Wang,Wenbo;Li,KangCharacteristicsofIsub,maxstressin90nm-technologynMOSFETsPanTaoTiHsuehPao/chineseJournalofSemiconductors,26(12),pp2411-2415,2005/12.
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