张保平 - 厦门大学 - 电子科学与技术学院

个人简介

兰州大学理学学学士，物理系半导体专业中国电子科技集团公司第十三研究所工学硕士，微电子与固体电子学专业日本东京大学工学博士，应用物理专业

研究领域

半导体光电子学宽带隙半导体垂直腔面发射激光器（VCSEL）发光二极管（LED）太阳能电池低维结构

近期论文

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1. Paul Onkundi Nyangaresi, Yi Qin, Guolong Chen, Baoping Zhang*, Yinghua Lu, Liang Shen*, “Effects of single and combined UV-LEDs on inactivation and subsequent reactivation of E. coli in water disinfection”, Water Research 147 (2018) 331-341. 2. R. B. Xu, Y. Mei, H. Xu, L. Y. Ying, Z. W. Zheng, H. Long, D. Zhang, B. P. Zhang*, and Jianping Liu*, "Green Vertical-Cavity Surface-Emitting Lasers Based on Combination of Blue-Emitting Quantum Wells and Cavity-Enhanced Recombination", IEEE Transactions on Electron Devices, 65 (10) (2018) 4401-4406. 3. Z. M. Zheng, Y. Q. Li, Onkundi Paul, H. Long*, S. Matta, M. Leroux, J. Brault, L. Y. Ying, Z. W. Zheng, and B. P. Zhang*, “Loss analysis in nitride deep ultraviolet planar cavity,” J. Nanophoton. 12(4) (2018) 043504. 4. X. M. Cai, Z. W. Zheng, H. Long, L. Y. Ying, and B. P. Zhang*, "Abnormal staircase-like I-V curve in InGaN quantum well solar cells", Appl. Phys. Lett. 112 (2018) 161102. 5. (REVIEW) H. C. Yu#, Z. W. Zheng#, Y. Mei, R. B. Xu, J. P. Liu, H. Yang, B. P. Zhang,*, T. C. Lu, and H. C. Kuo,* "Progress and prospects of GaN-based VCSEL from near UV to green emission", Progress in Quantum Electronics 57 (2018) 1–19. 6. J. Z. Wu , H. Long*, X. L. Shi, L. Y. Ying, Z. W. Zheng , and B. P. Zhang*, "Reduction of Lasing Threshold of GaN-Based Vertical-Cavity Surface-Emitting Lasers by Using Short Cavity Lengths", IEEE Transactions on Electron Devices, 65 (6) (2018) 2504-2508. 7. Y. Mei, R. B. Xu, H. Xu, L. Y. Ying, Z. W. Zheng, B. P. Zhang*, M. Li, and J. Zhang, " A comparative study of thermal characteristics of GaN-based VCSELs with three different typical structures"[J], Semiconductor Science and Technology, 33 (2018) 015016. 8. Y. Mei, R. B. Xu, G. E. Weng, H. Xu, L. Y. Ying, Z. W. Zheng, H. Long, B. P. Zhang*, Werner Hofmann, J. P. Liu*, J. Zhang, M. Li, J. Zhang,Sr. "Tunable InGaN quantum dot microcavity light emitters with 129 nm tuning range from yellow-green to violet"[J], Appl. Phys. Lett, 111 (2017) 121107. 9. R. B. Xu, Y. Mei, L. Y. Ying, Z. W. Zheng, W. Hofmann, J. P. Liu, H. Yang, M. Li, J. Zhang, B. P. Zhang*, "Simultaneous blue and green lasing of GaN based vertical-cavity surface-emitting lasers"，Semiconductor Science and Technology，32 (2017)105012. 10. Z. W. Zheng, H. Yu, B. C. Ren, L. M. Zhou, H. Y. Fu, X. Cheng, L. Y. Ying, H. Long and B. P. Zhang*, "Modulation Characteristics of GaN-Based Light-Emitting-Diodes for Visible Light Communication", ECS Journal of Solid State Science and Technology, 6(9)(2017) R135-R138. 11. Y. Mei, G. E. Weng, B. P. Zhang*, J. P. Liu*, W. Hofmann, L. Y. Ying, J. Y. Zhang, Z. C. Li, H. Yang and H. C. Kuo, "Quantum dot vertical-cavity surface-emitting lasers covering the “green gap”", Light: Sci. & Appl. 6 (2017) e16199. 12. Z. W. Zheng, M. H. Lai, L. Y. Ying and B. P. Zhang*, "Efficiency improvement for InGaN/GaN multiple-quantum-well solar cells with vertical configuration". Applied Physics A, 122 (2016) 932. 13. H. Long, X. H. Feng, Y. Wei, T. J. Yu, S. S. Fan, L. Y. Ying and B. P. Zhang*,” Carbon nanotube assisted Lift off of GaN layers on sapphire ”, Applied Surface Science, 394 (2016) 598-603. 14. M. Chen, G. Q. Gu, B. P. Zhang*, Z. P. Cai and L. Wei, "Self-assembled on-chip hemispherical microresonators for high sensitivity temperature sensing", Optics Express, 24 (2016) 26948. 15. G. E. Weng, Y. Mei, J. P. Liu, W. Hofmann, L. Y. Ying, J. Y. Zhang, Y. K. Bu, Z. C. Li, H. Yang, and B. P. Zhang*, "Low Threshold Continuous-Wave Lasing of Yellow-Green InGaN-QD Vertical-Cavity Surface-Emitting Lasers", Optics Express, 24 (2016) 15546. 16. H. Long, Y. P. Zeng, L. Y. Ying and B. P. Zhang*, “Coplanar metal-semiconductor-metal light emitting devices with n++ InGaN layer and its application for display”, Semiconductor Science and Technology, R2 (2016) 102402.