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1. Hong Bin Zhang, Hai Lin Yu, Ding Hua Bao, Shu Wei Li, Cheng Xin Wang, and Guo Wei Yang. Magnetoresistance Switch Effect of a Sn-Doped Bi2Te3 Topological Insulator, Adv. Mater., 24, 132-136, (2012). 2. H. B. Zhang, H. L. Yu, D. H. Bao, S. W. Li, C. X. Wang, and G. W. Yang. Weak localization bulk state in a topological insulator Bi2Te3 film, Phys. Rev. B, 86, 075102 (2012). 3. H. B. Zhang, H. L. Yu and G. W. Yang. Experimental evidence of the nanoscaled topological metallic surface state of Bi2Te3 and Sb2Te3 films, Europhys. Lett., 95, 56002 (2011) . 4. H. Li, H. B. Zhang, J. M. Shao, Y. Y. Zhang, D. X. Yao, and G. W. Yang. Topological insulator-graphene junction for spin transport, Appl. Phys. Lett., 101, 243102 (2012). 5. H. L. Yu, H. B. Zhang, X. F. Jiang, Y. Zheng, and G. W. Yang. Transport and magnetic properties of the Co2MnSi/Al/Co2MnSi trilayer, Appl. Phys. Lett., 100, 222407 (2012). 6. H. L. Yu, H. B. Zhang, X. F. Jiang, and G. W. Yang. Prediction of stable ferroelectricity in epitaxial BaTiO3 on Si, Appl. Phys. Lett., 101, 102903 (2012). 7. Hong Bin Zhang, Jun Fang Chen, Si Lie Fu, Chao Feng Guo, Wei Li, Meng Xiang Huang. Study on the characteristics of microwave ECR plasma discharge, Journal of South China Normal University, 2, 48-52 (2009). 8. Silie Fu, Junfang Chen, Hongbin Zhang, Chaofen Guo, Wei Li, Wenfen Zhao. Characterizations of GaN film growth by ECR plasma chemical vapor deposition, Journal of Crystal Growth, 311, 3325-3331 (2009).